FDR6678A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “high side” synchronous rectifier operation, providing an extremely low RDS(ON) and fast switching in a small package. • 7.5 A, 30 V. RDS(ON) = 24 mΩ @ VGS = 4.5V RDS(ON) = 20 mΩ @ VGS = 10 V • High performance trench technology for extremely low RDS(ON) • Fast switching, low gate charge Applications • High power and current in a smaller footprint than SO-8 • DC/DC converter D D S S TM SuperSOT -8 D D D Absolute Maximum Ratings Symbol G 5 4 6 3 7 2 8 1 TA=25oC unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter 30 V VGSS Gate-Source Voltage ±12 V ID Drain Current 7.5 A – Continuous (Note 1a) – Pulsed 40 Power Dissipation for Single Operation PD (Note 1a) 1.8 (Note 1b) 1.0 (Note 1c) TJ, TSTG W 0.9 -55 to +150 °C (Note 1a) 70 °C/W (Note 1) 20 °C/W Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .6678A FDR6678A 13’’ 12mm 2500 units 2000 Fairchild Semiconductor Corporation FDR6678A Rev B(W) FDR6678A April 2000 PRELIMINARY Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics VGS = 0 V, ID = 250 µA 30 V BVDSS Drain–Source Breakdown Voltage ∆BVDSS ===∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 IGSSF Gate–Body Leakage, Forward VGS = 12 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –12 V , VDS = 0 V –100 nA 2 V On Characteristics ID = 250 µA, Referenced to 25°C 22 mV/°C µA (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA ∆VGS(th) ===∆TJ Gate Threshold Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C RDS(on) Static Drain–Source On–Resistance ID(on) On–State Drain Current VGS = 4.5 V, VGS = 4.5 V, VGS = 10 V, VGS = 4.5 V, gFS Forward Transconductance VDS = 10 V, 0.8 ID = 6.8 A ID = 6.8 A TJ =125°C ID = 7.5 A, VDS = 5 V ID = 7.5 A 1.4 –4 20 29 18 mV/°C 24 40 20 40 mΩ A 30 S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge VDS = 15 V, V GS = 0 V, f = 1.0 MHz 1460 pF 227 pF 96 pF (Note 2) VDD = 10 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 Ω VDS = 15 V, ID = 7.5 A, VGS = 4.5 V 8 16 9 18 ns ns 35 58 ns 7 14 ns 13 21 nC 3.6 nC 3.6 nC Drain–Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward VGS = 0 V, IS = 1.5 A Voltage (Note 2) 0.7 1.5 A 1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 70°/W when 2 mounted on a 1in pad of 2 oz copper b) 125°/W when 2 mounted on a .04 in pad of 2 oz copper c) 135°/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDR6678A Rev B(W) FDR6678A Typical Characteristics 20 1.4 VGS = 10V ID, DRAIN CURRENT (A) 4.5V 1.3 3.5V 3.0V 15 VGS = 3.0V 1.2 2.5V 3.5V 1.1 10 4.0V 4.5V 1 5.0V 6.0V 5 0.9 10V 2.0V 0.8 0 0 0.5 1 1.5 0 2 5 10 Figure 1. On-Region haracteristics. 20 25 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.06 2 ID = 3.8 A RDS(ON), ON-RESISTANCE (OHM) ID = 6.8A VGS = 4.5V 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 0.05 0.04 o TA = 125 C 0.03 0.02 o TA = 25 C 0.01 0 150 2 4 o TJ, JUNCTION TEMPERATURE ( C) 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation withTemperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 TA = -55oC VDS = 5V IS, REVERSE DRAIN CURRENT (A) 35 o 25 C 30 ID, DRAIN CURRENT (A) 15 ID, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) 125oC 25 20 15 10 5 VGS = 0V 10 TA = 125oC 1 25oC -55oC 0.1 0.01 0.001 0.0001 0 1 1.5 2 2.5 3 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 3.5 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDR6678A Rev B(W) FDR6678A Typical Characteristics 2400 VDS = 5V ID = 7.5A 8 10V f = 1MHz VGS = 0 V 2000 15V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 6 4 2 CISS 1600 1200 800 COSS 400 0 CRSS 0 0 5 10 15 20 25 0 30 5 10 15 20 25 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 100 50 100µs RDS(ON) LIMIT SINGLE PULSE RθJA = 135°C/W TA = 25°C 40 1ms 10ms 10 100ms 30 1s 10s 1 0.1 20 DC VGS = 4.5V SINGLE PULSE 10 o RθJA = 135 C/W o TA = 25 C 0.01 0 0.1 1 10 100 0.001 0.01 VDS, DRAIN-SOURCE VOLTAGE (V) 0.1 1 10 100 1000 t1, TIME (sec) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) + RθJA RθJA = 135 °C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 0.01 0.01 t1 t2 SINGLE PULSE TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDR6678A Rev B(W) SuperSOTTM-8 Tape and Reel Data and Package Dimensions SSOT-8 Packaging Configuration: Figure 1.0 Customized Label Packaging Description: F63TNR Label Anti static Cover Tape SSOT-8 parts are shipped in tape. The carrier tape is made from a di ssipat ive (carbo n filled) po ly carbon ate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film , adhesive layer, sealant, and anti-static sprayed agent. These reeled parts in standard option are shipped w ith 3,000 units per 13" or 330cm diameter reel. The reels are dark blue in color and is made of polystyrene plastic (antistatic coated). Other option comes in 500 unit s per 7" or 177cm diameter reel. This and some other options are further described in the Packagin g Information table. These full reels are in di vidu ally barcod e labeled and placed inside a standard intermediate box (ill ustrated in figure 1.0) made of recyclable corrugated brow n paper. One box contains two reels maximum. And t hese boxes are placed ins ide a barcode labeled shipp ing bo x whic h comes in di fferent sizes depend in g on t he nu mber of parts shippe d. Static Dissi pat ive Emboss ed Carrier Tape F852 831N F852 831N F852 831N F852 831N F852 831N Pin 1 SSOT-8 Packaging Information Packaging Option Packaging type Qty per Reel/Tube/Bag Reel Size Box Dimension (mm) Standard (no f l ow c ode ) TNR D84Z SSOT-8 Unit Orientation TNR 3,000 500 13" D ia 7" Dia 343x64x343 184x187x47 Max qty per Box 6,000 1,000 Weight per unit (gm) 0.0416 0.0416 Weight per Reel (kg) 0.5615 0.0980 343mm x 342mm x 64mm Intermediate box for Standar d and L99Z Opti ons Note/Comments F63TNR Label F63TNR Label F63TNR Labe l sa mpl e 184mm x 187mm x 47mm Pizza Box fo r D84Z Option F63TNR Label SSOT-8 Tape Leader and Trailer Configuration: Figur e 2.0 LOT: CBVK741B019 QTY: 3000 FSID: FDR835N SPEC: D/C1: D9842 D/C2: QTY1: QTY2: SPEC REV: CPN: N/F: F (F63TNR)3 Carrier Tape Cover Tape Components Traile r Tape 300mm mi nimum or 38 empty pockets Lead er Tape 500mm mi nimum or 62 empty poc kets August 1999, Rev. C SuperSOTTM-8 Tape and Reel Data and Package Dimensions, continued SSOT-8 Embossed Carrier Tape Configuration: Figur e 3.0 P0 D0 T E1 F K0 Wc W E2 B0 Tc A0 D1 P1 User Direction of Feed Dimensions are in millimeter Pkg type A0 B0 SSOT-8 (12mm) 4.47 +/-0.10 5.00 +/-0.10 W 12.0 +/-0.3 D0 D1 E1 E2 1.55 +/-0.05 1.50 +/-0.10 1.75 +/-0.10 F 10.25 mi n 5.50 +/-0.05 P1 P0 8.0 +/-0.1 4.0 +/-0.1 K0 T Wc 1.37 +/-0.10 0.280 +/-0.150 9.5 +/-0.025 Notes : A0, B0, and K0 dimensions are deter mined with r espec t to t he EIA/Jedec RS-481 rotationa l and lateral movement requi remen ts (see sketches A, B, and C). 0.06 +/-0.02 0.5mm maximum 20 deg maximum Typical component cavity center line B0 Tc 0.5mm maximum 20 deg maximum component rotation Typical component center line Sketch A (Si de or Front Sectional View) A0 Component Rotation Sketch C (Top View) Component lateral movement Sketch B (Top View) SSOT-8 Reel Configuration: Figur e 4.0 Component Rotation W1 Measured at Hub Dim A Max Dim A max See detail AA Dim N 7" Diameter Option B Min Dim C See detail AA W3 13" Diameter Option Dim D min W2 max Measured at Hub DETAIL AA Dimensions are in inches and millimeters Tape Size Reel Option Dim A Dim B Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL) 12mm 7" Dia 7.00 177.8 0.059 1.5 512 +0.020/-0.008 13 +0.5/-0.2 0.795 20.2 5.906 150 0.488 +0.078/-0.000 12.4 +2/0 0.724 18.4 0.469 – 0.606 11.9 – 15.4 12mm 13" Dia 13.00 330 0.059 1.5 512 +0.020/-0.008 13 +0.5/-0.2 0.795 20.2 7.00 178 0.488 +0.078/-0.000 12.4 +2/0 0.724 18.4 0.469 – 0.606 11.9 – 15.4 1998 Fairchild Semiconductor Corporation July 1999, Rev. C SuperSOTTM-8 Tape and Reel Data and Package Dimensions, continued SuperSOT-8 (FS PKG Code 34, 35) 1:1 Scale 1:1 on letter size paper Di mensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.0416 September 1998, Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ E2CMOSTM FACT™ FACT Quiet Series™ FAST FASTr™ GTO™ SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. E