APT50M75JLLU2
APT50M75JLLU2
51A 0.075W
500V
POWER MOS 7TM
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7TM by significantly lowering RDS(ON)
and Qg. Power MOS 7TM combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Increased Power Dissipation
• Easier To Drive
• Lower Gate Charge, Qg
• PFC "Boost" Configuration
MAXIMUM RATINGS
Symbol
VDSS
ID
K
S
27
2
T-
D
G
SO
"UL Recognized"
ISOTOP®
D
K
G
S
All Ratings: TC = 25°C unless otherwise specified.
APT50M75JLLU2
Parameter
L
A
C
I
N
H
C
N
E
T
O
I
E
T
A
C
N RM
A
V FO
D
A
IN
500
Drain-Source Voltage
Volts
51
Continuous Drain Current @ TC = 25°C
1
UNIT
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
465
Watts
Linear Derating Factor
3.72
W/°C
VGSM
PD
TJ,TSTG
204
-55 to 150
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
1
51
1
Repetitive Avalanche Energy
EAS
Single Pulse Avalanche Energy
°C
300
(Repetitive and Non-Repetitive)
EAR
Volts
Amps
50
4
mJ
2500
STATIC ELECTRICAL CHARACTERISTICS
BVDSS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
Characteristic / Test Conditions
MIN
Drain-Source Breakdown Voltage (VGS = 0V, I D = 250µA)
500
Volts
51
Amps
On State Drain Current
2
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
Drain-Source On-State Resistance
2
(VGS = 10V, 0.5 ID[Cont.])
TYP
MAX
0.075
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
100
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
500
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
UNIT
Ohms
µA
±100
nA
5
Volts
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
405 S.W. Columbia Street
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
EUROPE
Chemin de Magret
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
050-7095 Rev - 10-2001
Symbol
APT50M75JLLU2
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
Test Conditions
MIN
TYP
Ciss
Input Capacitance
VGS = 0V
5800
Coss
Output Capacitance
VDS = 25V
1200
Crss
Reverse Transfer Capacitance
f = 1 MHz
90
Qg
Total Gate Charge
Qgs
Gate-Source Charge
L
A
C
I
N
H
C
N
E
T
O
I
E
T
C MA
N
A OR
V
AD INF
3
Qgd
Gate-Drain ("Miller") Charge
td(on)
Turn-on Delay Time
tr
Turn-off Delay Time
tf
145
VDD = 0.5 VDSS
38
ID = ID[Cont.] @ 25°C
66
VGS = 15V
17
VDD = 0.5 VDSS
14
ID = ID[Cont.] @ 25°C
38
RG = 0.6W
5
Rise Time
td(off)
VGS = 10V
Fall Time
MAX
UNIT
pF
nC
ns
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
Characteristic / Test Conditions
IS
MIN
TYP
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
1
VSD
Diode Forward Voltage
2
MAX
51
(Body Diode)
204
(VGS = 0V, IS = -ID[Cont.])
1.3
UNIT
Amps
Volts
t rr
Reverse Recovery Time (IS = -ID[Cont.], dl S/dt = 100A/µs)
620
ns
Q rr
Reverse Recovery Charge (IS = -ID[Cont.], dl S/dt = 100A/µs)
14.7
µC
dv/
dt
Peak Diode Recovery
dv/
dt
5
8
V/ns
MAX
UNIT
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
RqJC
Junction to Case
RqJA
Junction to Ambient
TYP
0.27
40
1 Repetitive Rating: Pulse width limited by maximum junction
°C/W
3 See MIL-STD-750 Method 3471
4 Starting T = +25°C, L = 1.92mH, R = 25W, Peak I = 51A
j
G
L
5 dv/ numbers reflect the limitations of the test circuit rather than the
dt
device itself. IS £ -ID Cont. di/dt £ 700A/µs VR £ VDSS TJ £ 150°C
[
]
APT Reserves the right to change, without notice, the specifications and information contained herein.
temperature.
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
D=0.5
0.1
0.2
0.05
0.1
0.05
Note:
0.01
0.02
0.005
0.01
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
q
050-7095 Rev - 10-2001
0.3
SINGLE PULSE
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.001
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
APT50M75JLLU2
Diode Specifications Section
MAXIMUM RATINGS (UltraFast Recovery Diode)
Symbol
VR
All Ratings: TC = 25°C unless otherwise specified.
Characteristic / Test Conditions
APT50M75JLLU2
UNIT
600
Volts
Maximum D.C. Reverse Voltage
VRRM
Maximum Peak Repetitive Reverse Voltage
VRWM
Maximum Working Peak Reverse Voltage
IF(AV)
Maximum Average Forward Current (TC = 80°C, Duty Cycle = 0.5)
30
RMS Forward Current
60
IF(RMS)
IFSM
TJ,TSTG
TL
L
A
C
I
N
H
C
N
E
T
O
I
E
T
C MA
N
A OR
V
AD INF
Amps
320
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3mS)
-55 to 150
Operating and StorageTemperature Range
°C
300
Lead Temperature: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions
MIN
TYP
IF = 30A
VF
IRM
CT
Maximum Forward Voltage
Maximum Reverse Leakage Current
Junction Capacitance, VR = 200V
IF = 60A
MAX
UNIT
1.8
1.5
Volts
IF = 30A, TJ = 150°C
1.6
VR = VR Rated
250
VR = VR Rated, TJ = 125°C
500
µA
40
pF
050-7095 Rev - 10-2001
Symbol
APT50M75JLLU2
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
MIN
TYP
MAX
65
trr1
Reverse Recovery Time, IF = 1.0A, diF /dt = -15A/µS, VR = 30V, TJ = 25°C
50
trr2
Reverse Recovery Time
TJ = 25°C
50
trr3
IF = 30A, diF /dt = -240A/µS, VR = 350V
TJ = 100°C
80
tfr1
Forward Recovery Time
TJ = 25°C
155
tfr2
IF = 30A, diF /dt = 240A/µS, VR = 350V
TJ = 100°C
155
IRRM1
Reverse Recovery Current
TJ = 25°C
4
10
IRRM2
IF = 30A, diF /dt = -240A/µS, VR = 350V
TJ = 100°C
7.5
15
Qrr1
Recovery Charge
TJ = 25°C
100
Qrr2
IF = 30A, diF /dt = -240A/µS, VR = 350V
TJ = 100°C
300
Vfr1
Forward Recovery Voltage
TJ = 25°C
5
Vfr2
IF = 30A, diF /dt = 240A/µS, VR = 350V
TJ = 100°C
5
Rate of Fall of Recovery Current
TJ = 25°C
400
IF = 30A, diF /dt = -240A/µS, VR = 350V (See Figure 10)
TJ = 100°C
200
diM/dt
L
A
C
I
N
H
C
N
E
T
IO
E
T
C MA
N
A OR
V
AD INF
UNIT
nS
Amps
nC
Volts
A/µS
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
Characteristic / Test Conditions
RqJC
Junction-to-Case Thermal Resistance
RqJA
Junction-to-Ambient Thermal Resistance
WT
MIN
TYP
MAX
UNIT
0.90
°C/W
20
1.06
oz.
30
gm.
Package Weight
2.0
D=0.5
0.5
0.2
0.1
0.1
0.05
0.05
0.02
Note:
0.01
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
q
050-7095 Rev - 10-2001
1.0
SINGLE PULSE
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.01
0.005 -5
10
t1
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 14, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10
APT50M75JLLU2
1600
Qrr, REVERSE RECOVERY CHARGE
(nano-COULOMBS)
80
TJ = 150°C
60
TJ = 100°C
40
TJ = 25°C
0
0
0.5
1.0
1.5
2.0
2.5
VF, ANODE-TO-CATHODE VOLTAGE (VOLTS)
Figure 15, Forward Voltage Drop vs Forward Current
60A
800
30A
400
10
50
100
500 1000
diF /dt, CURRENT SLEW RATE (AMPERES/µSEC)
Figure 16, Reverse Recovery Charge vs Current Slew Rate
2.0
TJ = 100°C
VR = 350V
60A
30
20
30A
10
15A
0
0
200
400
600
800
1000
diF /dt, CURRENT SLEW RATE (AMPERES/µSEC)
Figure 17, Reverse Recovery Current vs Current Slew Rate
1.6
Qrr
trr
1.2
trr
IRRM
0.8
Qrr
0.4
0.0
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 18, Dynamic Parameters vs Junction Temperature
200
-50
2500
tfr, FORWARD RECOVERY TIME
(nano-SECONDS)
TJ = 100°C
VR = 350V
trr, REVERSE RECOVERY TIME
(nano-SECONDS)
15A
0
Kf, DYNAMIC PARAMETERS
(NORMALIZED)
IRRM, REVERSE RECOVERY CURRENT
(AMPERES)
40
1200
L
A
C
I
N
H
C
N
E
T
IO
E
T
C MA
N
A OR
V
AD INF
TJ = -55°C
20
TJ = 100°C
VR = 350V
160
60A
120
30A
15A
80
40
0
0
200
400
600
800
1000
diF /dt, CURRENT SLEW RATE (AMPERES/µSEC)
Figure 19, Reverse Recovery Time vs Current Slew Rate
25
TJ = 100°C
VR = 350V
IF = 30A
2000
20
Vfr
1500
15
1000
10
500
5
tfr
Vfr, FORWARD RECOVERY VOLTAGE
(VOLTS)
IF, FORWARD CURRENT
(AMPERES)
100
0
0
0
200
400
600
800
1000
diF /dt, CURRENT SLEW RATE (AMPERES/µSEC)
Figure 20, Forward Recovery Voltage/Time vs Current Slew Rate
800
100
50
30
0.01
0.05
0.1
Figure 21, Junction Capacitance vs Reverse Voltage
0.5
1
5
VR, REVERSE VOLTAGE (VOLTS)
10
50
100
200
050-7095 Rev - 10-2001
CJ, JUNCTION CAPACITANCE
(pico-FARADS)
500
APT50M75JLLU2
Vr
D.U.T.
trr/Qrr
Waveform
30µH
PEARSON 411
CURRENT
TRANSFORMER
+15v
diF /dt Adjust
0v
-15v
L
A
C
I
N
H
C
N
E
T
O
I
E
T
C MA
N
A OR
V
AD INF
Figure 22, Diode Reverse Recovery Test Circuit and Waveforms
1
IF - Forward Conduction Current
2
diF /dt - Current Slew Rate, Rate of Forward
Current Change Through Zero Crossing.
3
IRRM - Peak Reverse Recovery Current.
4
trr - Reverse Recovery Time Measured from Point of IF
1
4
6
Zero
5
3
Current Falling Through Zero to a Tangent Line { 6 diM/dt}
Extrapolated Through Zero Defined by 0.75 and 0.50 IRRM.
0.5 IRRM
0.75 IRRM
2
5
Qrr - Area Under the Curve Defined by IRRM and trr.
6
diM/dt - Maximum Rate of Current Change During the Trailing Portion of trr.
Qrr = 1/2 (trr . IRRM)
Figure 23, Diode Reverse Recovery Waveform and Definitions
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
r = 4.0 (.157)
(2 places)
8.9 (.350)
9.6 (.378)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
Hex Nut M4
(4 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
1.95 (.077)
2.14 (.084)
3.3 (.129)
3.6 (.143)
14.9 (.587)
15.1 (.594)
Cathode
Drain
050-7095 Rev - 10-2001
30.1 (1.185)
30.3 (1.193)
Changed 2/10/99
38.0 (1.496)
38.2 (1.504)
Gate
Source
Dimensions in Millimeters and (Inches)
"UL Recognized" File No. E145592
ISOTOP® is a Registered Trademark of SGS Thomson.
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,256,583
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058