2 1 3 4 2 1 Anti-Parallel APT2X100D30J 3 4 2 1 3 4 SO Parallel APT2X101D30J 2 T- 27 "UL Recognized" ISOTOP ® file # E145592 ® APT2X101D30J APT2X100D30J 300V 100A 300V 100A DUAL DIE ISOTOP® PACKAGE ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode • Ultrafast Recovery Times • Low Losses • Soft Recovery Characteristics • Low Noise Switching • Popular SOT-227 Package • Cooler Operation • Low Forward Voltage • Higher Reliability Systems • High Blocking Voltage • Increased System Power • • • • • -Switchmode Power Supply -Inverters Free Wheeling Diode -Motor Controllers -Converters Snubber Diode Uninterruptible Power Supply (UPS) Induction Heating High Speed Rectifiers • Low Leakage Current MAXIMUM RATINGS Symbol VR Density All Ratings: TC = 25°C unless otherwise specified. Characteristic / Test Conditions APT2X101_100D30J UNIT 300 Volts Maximum D.C. Reverse Voltage VRRM Maximum Peak Repetitive Reverse Voltage VRWM Maximum Working Peak Reverse Voltage IF(AV) Maximum Average Forward Current (TC = 123°C, Duty Cycle = 0.5) 100 IF(AV) RMS Forward Current (Square wave, 50% duty) 183 IFSM Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) TJ,TSTG TL Amps 1000 -55 to 175 Operating and StorageTemperature Range Lead Temperature for 10 Sec. °C 300 STATIC ELECTRICAL CHARACTERISTICS Forward Voltage IRM Maximum Reverse Leakage Current CT Junction Capacitance, VR = 200V MIN TYP MAX IF = 100A 1.2 1.4 IF = 200A 1.5 IF = 100A, TJ = 125°C 1.0 VR = 300V APT Website - http://www.advancedpower.com Volts 500 VR = 300V, TJ = 125°C 1000 270 UNIT µA 3-2006 VF Characteristic / Test Conditions pF 053-4057 Rev B Symbol DYNAMIC CHARACTERISTICS Symbol APT2X101_100D30J Characteristic Test Conditions trr Reverse Recovery Time trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM IF = 1A, diF/dt = -100A/µs, VR = 30V, TJ = 25°C Reverse Recovery Time Qrr Reverse Recovery Charge IF = 100A, diF/dt = -200A/µs VR = 200V, TC = 125°C Maximum Reverse Recovery Current trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM VR = 200V, TC = 25°C Maximum Reverse Recovery Current trr IRRM IF = 100A, diF/dt = -200A/µs IF = 100A, diF/dt = -1000A/µs VR = 200V, TC = 125°C Maximum Reverse Recovery Current MIN TYP MAX UNIT - 36 - 47 - 120 - 5 - 110 ns - 650 nC - 10 - 70 ns - 1490 nC - 37 Amps MIN TYP ns nC - - Amps Amps THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic / Test Conditions RθJC VIsolation WT Torque Junction-to-Case Thermal Resistance RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.) MAX UNIT .33 °C/W Volts 2500 Package Weight 1.03 oz 29.2 g Maximum Mounting Torque 10 lb•in 1.1 N•m APT Reserves the right to change, without notice, the specifications and information contained herein. D = 0.9 0.30 0.25 0.7 0.20 0.5 Note: 0.15 0.3 PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 0.35 0.10 0 t2 0.1 0.05 t Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC SINGLE PULSE 0.05 10-5 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION RC MODEL 3-2006 Junction temp (°C) 053-4057 Rev B t1 Power (watts) 0.0294 °C/W 0.00051 J/°C 0.0699 °C/W 0.0310 J/°C 0.230 °C/W 0.699 J/°C Case temperature (°C) FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL TYPICAL PERFORMANCE CURVES 300 APT2X101_100D30J 120 T = 125°C J V = 200V 200 150 TJ = 150°C 100 TJ = 125°C 50 0 TJ = 25°C TJ = -55°C 0.5 1 1.5 2 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current vs. Forward Voltage 0 1800 Qrr, REVERSE RECOVERY CHARGE (nC) trr, REVERSE RECOVERY TIME (ns) 250 T = 125°C J V = 200V 1600 R 1400 175A 100A 1200 1000 800 50A 600 400 200 0 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 4. Reverse Recovery Charge vs. Current Rate of Change 50A 80 60 40 20 40 35 T = 125°C J V = 200V 175A R 30 25 100A 20 50A 15 10 5 0 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 5. Reverse Recovery Current vs. Current Rate of Change 250 Duty cycle = 0.5 T = 175°C Qrr 1.2 R 100A 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/µs) Figure 3. Reverse Recovery Time vs. Current Rate of Change 1.4 J trr 200 1.0 IRRM 0.8 IF(AV) (A) Kf, DYNAMIC PARAMETERS (Normalized to 1000A/µs) 100 0 IRRM, REVERSE RECOVERY CURRENT (A) IF, FORWARD CURRENT (A) 175A trr 0.6 150 100 0.4 Qrr 0.2 0.0 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6. Dynamic Parameters vs. Junction Temperature 50 0 25 50 75 100 125 150 175 Case Temperature (°C) Figure 7. Maximum Average Forward Current vs. CaseTemperature 2000 1500 3-2006 1000 500 0 1 10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage 053-4057 Rev B CJ, JUNCTION CAPACITANCE (pF) 2500 APT2X101_100D30J Vr diF /dt Adjust +18V APT30M30LLL 0V D.U.T. 30µH trr/Qrr Waveform PEARSON 2878 CURRENT TRANSFORMER Figure 9. Diode Test Circuit 1 IF - Forward Conduction Current 2 diF /dt - Rate of Diode Current Change Through Zero Crossing. 3 IRRM - Maximum Reverse Recovery Current. 4 trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. 5 1 4 Zero 5 0.25 IRRM 3 2 Qrr - Area Under the Curve Defined by IRRM and trr. Figure 10, Diode Reverse Recovery Waveform and Definitions SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 8.9 (.350) 9.6 (.378) Hex Nut M4 H100 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 053-4057 Rev B 3-2006 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) Anode 2 1.95 (.077) 2.14 (.084) Anti-parallel Parallel APT2X100D30J APT2X101D30J Cathode 1 Cathode 1 Anode 1 38.0 (1.496) 38.2 (1.504) Dimensions in Millimeters and (Inches) Cathode 2 Anode 1 Cathode 2 Anode 2 ISOTOP® is a Registered Trademark of SGS Thomson. APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.