2 2 3 3 1 1 7 22 OT 4 S 4 Parallel APT2X61S20J APT2X61S20J 200V 75A "UL Recognized" ISOTOP fi file # E145592 DUAL DIE ISOTOP® PACKAGE HIGH VOLTAGE SCHOTTKY DIODES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Parallel Diode • Ultrafast Recovery Times • Low Losses • Soft Recovery Characteristics • Low Noise Switching • Popular SOT-227 Package • Cooler Operation • Low Forward Voltage • Higher Reliability Systems • High Blocking Voltage • Increased System Power • • • • • -Switchmode Power Supply -Inverters Free Wheeling Diode -Motor Controllers -Converters Snubber Diode Uninterruptible Power Supply (UPS) 48 Volt Output Rectifiers High Speed Rectifiers • Low Leakage Current MAXIMUM RATINGS Symbol VR Density All Ratings: TC = 25°C unless otherwise specified. Characteristic / Test Conditions APT2X61S20J UNIT 200 Volts Maximum D.C. Reverse Voltage VRRM Maximum Peak Repetitive Reverse Voltage VRWM Maximum Working Peak Reverse Voltage IF(AV) Maximum Average Forward Current (TC =106°C, Duty Cycle = 0.5) 75 IF(RMS) RMS Forward Current (Square wave, 50% duty) 137 Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) 600 IFSM TJ,TSTG EAVL Operating and StorageTemperature Range Avalanche Energy (2A, 30mH) Amps -55 to 150 °C 60 mJ STATIC ELECTRICAL CHARACTERISTICS Forward Voltage IRM Maximum Reverse Leakage Current CT Junction Capacitance, VR = 200V TYP MAX IF = 60A .83 .90 IF = 120A .98 IF = 60A, TJ = 125°C .72 VR = 200V Microsemi Website - http://www.microsemi.com Volts 1 VR = 200V, TJ = 125°C 25 300 UNIT mA 7-2006 VF MIN pF 053-6044 Rev C Symbol DYNAMIC CHARACTERISTICS Symbol APT2X61S20J Characteristic Test Conditions trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Time Qrr Reverse Recovery Charge - 55 ns - 160 nC - 5 - 100 ns - 490 nC - 10 - 80 ns - 1100 nC - 27 Amps MIN TYP IF = 60A, diF/dt = -200A/µs VR = 133V, TC = 25°C IF = 60A, diF/dt = -200A/µs VR = 133V, TC = 125°C Maximum Reverse Recovery Current trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM TYP Maximum Reverse Recovery Current trr IRRM MIN IF = 60A, diF/dt = -700A/µs VR = 133V, TC = 125°C Maximum Reverse Recovery Current MAX - - UNIT Amps Amps THERMAL AND MECHANICAL CHARACTERISTICS Symbol RθJC VIsolation WT Torque Characteristic / Test Conditions MAX UNIT .54 °C/W Junction-to-Case Thermal Resistance RMS Voltage (50-60hHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.) Volts 2500 Package Weight 1.03 oz 29.2 g Maximum Terminal & Mounting Torque 10 lb•in 1.1 N•m Microsemi reserves the right to change, without notice, the specifications and information contained herein. D = 0.9 0.40 0.7 0.30 0.5 0.20 0.3 0.10 0 Note: PDM 0.50 0.1 0.05 10-5 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC SINGLE PULSE 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION 7-2006 TJ ( C) 053-6044 Rev C t1 t2 TC ( C) 0.143 0.230 0.167 Dissipated Power (Watts) 0.00623 0.0943 ZEXT Z JC, THERMAL IMPEDANCE (°C/W) θ 0.60 0.543 ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL TYPICAL PERFORMANCE CURVES TJ = 25°C 140 120 100 80 60 TJ = 125°C 40 0 0 1400 120A 1000 60A 800 600 30A 400 200 20 1.2 60A 15 10 30A 5 Duty cycle = 0.5 TJ = 150°C 120 100 80 60 0.4 40 0.2 20 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6. Dynamic Parameters vs. Junction Temperature 0 75 100 125 150 Case Temperature (°C) Figure 7. Maximum Average Forward Current vs. CaseTemperature 100 3000 50 PEAK AVALANCHE CURRENT (A) 3500 2500 2000 1500 1000 25 50 10 5 7-2006 0.0 CJ, JUNCTION CAPACITANCE (pF) 20 140 Qrr t rr 0.6 120A 25 160 IF(AV) (A) I RRM 30 0 200 400 600 800 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 5. Reverse Recovery Current vs. Current Rate of Change t rr Qrr 1.0 TJ = 125°C VR = 133V 0 200 400 600 800 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 4. Reverse Recovery Charge vs. Current Rate of Change Kf, DYNAMIC PARAMETERS (Normalized to 700A/µs) 40 0 200 400 600 800 -diF /dt, CURRENT RATE OF CHANGE(A/µs) Figure 3. Reverse Recovery Time vs. Current Rate of Change 0 0.8 30A 35 1200 0 60 0 0.2 0.4 0.6 0.8 1 1.2 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current vs. Forward Voltage TJ = 125°C VR = 133V 1600 60A 50 0 1 1 10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage 1 10 100 1000 2200 Time in Avalanche (µs) Figure 9. Single Pulse UIS SOA 053-6044 Rev C Qrr, REVERSE RECOVERY CHARGE (nC) 1800 120A 80 TJ = 150°C 20 TJ = 125°C VR = 133V 100 IRRM, REVERSE RECOVERY CURRENT (A) IF, FORWARD CURRENT (A) 160 trr, REVERSE RECOVERY TIME (ns) TJ = -55°C 180 APT2X61S20J 120 200 APT2X61S20J Vr diF /dt Adjust +18V APT20M36BLL 0V D.U.T. 30µH trr/Qrr Waveform PEARSON 2878 CURRENT TRANSFORMER Figure 9. Diode Test Circuit 1 IF - Forward Conduction Current 2 diF /dt - Rate of Diode Current Change Through Zero Crossing. 3 IRRM - Maximum Reverse Recovery Current. 4 trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. 5 1 4 Zero 5 3 0.25 IRRM 2 Qrr - Area Under the Curve Defined by IRRM and trr. Figure 10, Diode Reverse Recovery Waveform and Definitions SOT-227 Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 8.9 (.350) 9.6 (.378) Hex Nut M4 H100 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 1.95 (.077) 2.14 (.084) 7-2006 14.9 (.587) 15.1 (.594) 053-6044 Rev C 3.3 (.129) 3.6 (.143) 38.0 (1.496) 38.2 (1.504) 30.1 (1.185) 30.3 (1.193) Dimensions in Millimeters and (Inches) Parallel APT2X61S20J Cathode 1 Anode 1 Cathode 2 Anode 2 ISOTOP® is a registered trademark of ST Microelectronics NV. Microsemi’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.