HF50-12 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The HF50-12 is Designed for 12.5 Volt Class AB and Class C Power Amplifier Applications Operating in the 2 to 32 MHz HF Band. FEATURES INCLUDE: • High Gain, 16 dB Typical @ 30 MHz • Emitter Ballasting • Withstands Severe Mismatch MAXIMUM RATINGS PACKAGE STYLE .380" 4L FLANGE IC 10 A VCB 36 V VCE 18 V VEB 4.0 V PDISS 175 W @ TC = 25 OC TJ -65 OC to +200 OC T STG -65 OC to +150 OC θ JC 1 = COLLECTOR 2 = BASE 3 & 4 = EMITTER O 1.0 C/W CHARACTERISTICS TC = 25 OC SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BV CES IC = 100 mA 36 V BV CEO IC = 100 mA 18 V BV EBO IE = 10 mA 4.0 V ICES VCE = 15 V hFE VCE = 5.0 V Cob VCB = 12.5 V GPE η IMD VCC = 12.5 V 10 20 IC = 5.0 A f = 1.0 MHz 15 ICQ = 50 mA POUT = 50 W(PEP) f = 30 MHz mA --- 200 pF 16 55 -30 dB % dB A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice.