ASI S50-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI S50-28 is Designed for Class AB or C, Common Emitter Linear HF Communications Applications. PACKAGE STYLE .500" 4L FLG FEATURES INCLUDE: • High Power Gain • Emitter Ballasting MAXIMUM RATINGS IC 9.0 A VCB 65 V PDISS 117 W @ TC = 25 OC TJ -55 OC to +200 OC T STG -55 OC to +200 OC θ JC 1.7 OC/W CHARACTERISTICS SYMBOL 1 = COLLECTOR 2 = BASE 3 & 4 = EMITTER TC = 25 OC TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BV CBO IC = 200 mA 65 V BV CEO IC = 200 mA 35 V BV EBO IE = 10 mA 4.0 V ICBO VCB = 30 V hFE VCE = 5.0 V Cob VCB = 30 V Pout PG ηC VCE = 28 V IC = 500 mA 10 f = 1.0 MHz Pin = 1.0 W fo = 30 MHz 50 17 60 18 65 2.0 mA 200 --- 150 pF W dB % A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice.