LT3014 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI LT3014 is a Common Emitter Device Designed for General Purpose Class A and AB Amplifier Applications up to 1.0 GHz. FEATURES INCLUDE: PACKAGE STYLE .280 4L STUD • Gold Metalization • Emitter Ballasting • High Gain MAXIMUM RATINGS IC 300 mA VCB 45 V PDISS 5.0 W @ TC = 25 OC TJ -55 OC to +200 OC T STG -55 OC to +200 OC θ JC 33.0 OC/W CHARACTERISTICS SYMBOL 1 = COLLECTOR 2 & 4 = EMITTER 3 = BASE NONE TC = 25 OC TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BV CEO IC = 10 mA BV CES VBE = 0 V BV EBO IE = 1.0 mA hFE VCE = 5.0 V IC = 100 mA PG VCE = 20 V ICQ = 150 mA f = 1.0 GHz 3.0 3.5 GHz P1dB VCE = 20 V ICQ = 150 mA f = 1.0 GHz 27 29 dBm IP3 VCE = 20 V ICQ = 150 mA f = 1.0 GHz POUT = 10 dBm (2 EQUAL TONES) 48 dBm Cob VCB = 28 V f = 1.0 MHz 2.0 ft VCE = 20 V IC = 10 mA ICQ = 150 mA 22 V 50 V 3.5 V 20 f = 1.0 GHz 3.0 200 3.5 3.0 --- pF GHz A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice.