Data Sheet No.PD 60158-H IPS521/IPS521S FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH Features • • • • • • • Product Summary Over temperature protection (with auto-restart) Short-circuit protection (current limit) Active clamp E.S.D protection Status feedback Open load detection Logic ground isolated from power ground Rds(on) 80mΩ (max) V clamp 50V I Limit 10A V open load 3V Description The IPS521/IPS521S are fully protected five terminal high side switches with built in short-circuit , overtemperature, ESD protection, inductive load capability and diagnostic feedback. The output current is controlled when it reaches I lim value. The current limitation is activated until the thermal protection acts. The over-temperature protection turns off the high side switch if the junction temperature exceeds Tshutdown. It will automatically restart after the junction has cooled 7 oC below Tshutdown. A diagnostic pin is provided for status feedback of short-circuit, over-temperature and open load detection. The double level shifter circuitry allows large offsets between the logic ground and the load ground. Truth Table Typical Connection Packages Op. Conditions Normal Normal Open load Open load Over current Over current Over-temperature Over-temperature In Out H H L L H H L H H L (limiting) L L H L (cycling) L L Dg H L H H L L L L + VCC + 5v 15K Status feedback Output pull-up resistor Vcc Dg Logic Rdg Rin Logic signal www.irf.com control 5 Lead D2Pak (SMD220) IPS521S Out In Gnd Load Logic Gnd Load Gnd 5 Lead TO220 - IPS521 1 IPS521/IPS521S Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are referenced to GROUND lead. (Tj = 25oC unless otherwise specified). Symbol Parameter Min. Max. Vcc-50 Vcc+0.3 Maximum logic ground to load ground offset Vcc-50 Vcc+0.3 Vout Voffset Maximum output voltage Vin Iin, max Maximum Input voltage Vdg Idg, max Maximum diagnostic output voltage Maximum diagnostic output current Isd cont. Diode max. permanent current (1) Maximum positive IN current (rth=62 o C/W) 7 -5 10 -0.3 7 V -1 10 mA A — 2.2 — 10 — 4 ESD2 — 0.5 Test Conditions V -0.3 Isd pulsed Diode max. pulsed current (1) ESD1 Electrostatic discharge voltage (Human Body) Electrostatic discharge voltage (Machine Model) Units mA C=100pF, R=1500Ω, kV C=200pF, R=0Ω, L=10µH (1) Pd Maximum power dissipation (TC=25oC) IPS521 (TC=25oC) IPS521S — 40 — 1.56 Tj max. Max. storage & operating junction temp. -40 +150 Tlead Lead temperature (soldering 10 seconds) — 300 — 50 Min. Typ. — — — — — ! $ Vcc max. Maximum Vcc voltage W o C V Thermal Characteristics Symbol Parameter Rth Rth Rth Rth Rth 1 2 1 2 3 Thermal Thermal Thermal Thermal Thermal resistance junction to case resistance junction ambient resistance with standard footprint resistance with 1" square footprint resistance junction to case 60 35 ! Max. Units Test Conditions — — — — — TO-220 o C/W D2PAK (SMD220) (1) Limited by junction temperature (pulsed current limited also by internal wiring) 2 www.irf.com IPS521/IPS521S Recommended Operating Conditions These values are given for a quick design. For operation outside these conditions, please consult the application notes. Symbol Parameter Min. Max. Vcc VIH VIL Iout 5.5 4 -0.3 35 5.5 0.9 — 2.2 — 4 10 1.9 6 20 Iout Rin Rdg Continuous Vcc voltage High level input voltage Low level input voltage Continuous output current (Tamb = 85oC, Tj = 125oC, Rth = 60oC/W, ) IPS521 Continuous output current (Tamb = 85oC, Tj = 125oC, Rth = 80oC/W, ) IPS521S Recommended resistor in series with IN pin Recommended resistor in series with DG pin Units V A kΩ Static Electrical Characteristics (Tj = 25oC, Vcc = 14V unless otherwise specified.) Symbol Parameter Min. Typ. ON state resistance Tj = 25oC — 55 80 ON state resistance @ Vcc = 6V — 55 80 ON state resistance Tj = 150oC — 110 140 Vcc oper. V clamp 1 V clamp 2 Vf Icc off Icc on Icc ac Vdgl Ioh Iol Idg Operating voltage range Vcc to OUT clamp voltage 1 Vcc to OUT clamp voltage 2 Body diode forward voltage Supply current when OFF Supply current when ON Ripple current when ON (AC RMS) Low level diagnostic output voltage Output leakage current Output leakage current 5.5 50 — — — — — — — 0 — 55 56 0.9 16 0.6 20 0.15 50 — 35 — 65 1.2 50 2 — 0.4 120 25 leakage Diagnostic output leakage current IN high threshold voltage IN low threshold voltage On state IN positive current Input hysteresis — — 1 — 0.1 — 2.2 1.9 70 0.25 10 3 — 200 0.5 Rds(on) Max. Units Test Conditions Vin = 5V, Iout = 5A @Tj=25o C Rds(on) (V cc=6V) Rds(on) mΩ Vin = 5V, Iout = 2.5A Vin = 5V, Iout = 5A @Tj=150oC Vih Vil Iin, on In hyst www.irf.com V µA mA µA V µA Id = 10mA (see Fig.1 & 2) Id = Isd (see Fig.1 & 2) Id = 2.5A, Vin = 0V Vin = 0V, Vout = 0V Vin = 5V Vin = 5V Idg = 1.6 mA Vout = 6V Vout = 0V Vdg = 5.5V V µA V Vin = 5V 3 IPS521/IPS521S Switching Electrical Characteristics Vcc = 14V, Resistive Load = 2.8Ω, Tj = 25oC, (unless otherwise specified). Symbol Parameter Tdon Tr1 Tr2 dV/dt (on) Eon T doff Tf dV/dt (off) Eoff Tdiag Min. Turn-on delay time Rise time to Vout = Vcc - 5V Rise time Vcc - 5V to Vout = 90% of Vcc Turn ON d V/dt Turn ON energy Turn-off delay time Fall time to V out = 10% of Vcc Turn OFF d V/dt Turn OFF energy Vout to Vdiag propagation delay Typ. Max. Units Test Conditions — — — — — — — — — — 10 25 130 0.7 1500 35 25 0.9 250 5 Min. Typ. 7 — — 2 2 10 165 158 3 3 40 60 200 2 — 70 50 3 — 15 µs See figure 3 V/µs µJ µs V/µs µJ µs See figure 4 See figure 6 Protection Characteristics Symbol Parameter I lim Internal current limit T sd+ Over-temp. positive going threshold T sdOver-temp. negative going threshold V sc Short-circuit detection voltage (3) Vopen load Open load detection threshold Max. Units Test Conditions 14 — — 4 4 A o C V Vout = 0V See fig. 2 See fig. 2 See fig. 2 (3) Referenced to Vcc Lead Assignments 3 (Vcc) 3 (Vcc) 1 - Ground 2 - In 3 - Vcc 4 - DG 5 - Out 12345 12345 5 Lead - D2PAK (SMD220) 5 Lead - TO220 IPS521 IPS521S Part Number 4 www.irf.com IPS521/IPS521S Functional Block Diagram All values are typical VCC 50V Over temperature 165°C 158°C Tj Charge pump 62 V 2.7 V IN Level shift 2.2 V 7 V 200 KΩ driver Current limit DG + 10 A 7 V 40 Ω 3V + + Short-circuit Open load GND - 3V VOUT T clamp Vin 5V 0V Vin Iout limiting T shutdown cycling Ilim. Iout ( + Vcc ) Out T 0V Tsd+ Tsd(160 ° ) V clamp ( see Appl . Notes to evaluate power dissipation ) Figure 1 - Active clamp waveforms www.irf.com Figure 2 - Protection timing diagram 5 IPS521/IPS521S Vin Vcc 90% Vin Vcc - 5V Vout dV/dt on 90% 10% Td on dV/dt off Tr 1 Vout Tr 2 E1(t) 10% Iout1 Eon1 Iout2 Resistive load Td off E2 (t) Tf Inductive load Eon2 Figure 4 - Switching times definition (turn-off) Figure 3 - Switching times definition (turn-on) Turn on energy with a resistive or an inductive load V in Dg Vcc Vcc Vcc -Vsc IN Out + Gnd L Vin 14 V V o ut Vout Vol R V d ia g 5v 0v Iout Diag off blanking Diag on blanking Rem : V load is negative during demagnetization Figure 5 - Active clamp test circuit 6 T diag Figure 6 - Diagnostic delay definitions www.irf.com IPS521/IPS521S 100 200% 150% 50 100% 0 0 5 10 15 20 25 30 35 50% -50 Figure 7 - Rds(on) (mΩ) Vs Vcc (V) 0 50 100 150 Figure 8 - Normalized Rds(on) (%) Vs Tj (oC) 10 100 1 50 0.1 0 0 2 4 6 8 Figure 9 - Rds(on) (mΩ) Vs Iout (A) www.irf.com 10 Figure 10 - Max. Iout (A) Vs Load Inductance (uH) 7 IPS521/IPS521S 10 10 Rthja= 10°C/W Rthja= 20°C/W 5 1inch² footprint Rthja= 35°C/W 5 Rthja= 40°C/W Std. footprint Rthja= 60°C/W Free air 0 0 25 50 75 100 125 25 150 Figure 11a - Max load current (A) Vs Tamb (oC) IPS521 50 75 100 125 150 Figure 11b - Max load current (A) Vs Tamb (oC) IPS521S 15 100 __ TO220/SMD 220 free air - - - Rth = 5 °C/W 10 10 1 5 0.1 Figure 12 - Transient Thermal Impedance (oC/W) Vs Time (S) 8 1E+03 1E+02 1E+01 1e+00 1E-01 1E-02 1E-03 1E-04 1E-05 0.01 0 -50 0 50 100 150 Figure 13 - Ilim (A) Vs Tj (oC) www.irf.com IPS521/IPS521S Resistive load 3500 10000 3000 1000 I=Imax vs Induct.(see fig.10) Eon 2500 Eoff 100 2000 1500 I=1.5A 10 1000 4 5 6 7 Figure 14 - Eon, Eoff (µJ) Vs Iout (A) 1E+06 3 1E+05 2 1E+04 1 1E+03 0.1 0 1E+02 0 1E+01 1 500 Figure 15 - Eon (µJ) Vs Load Inductance (µH) (see Fig. 3) 150 1.00E-03 125 Diag on blanking 100 1.00E-04 75 50 1.00E-05 25 Diag off blanking 0 0 1 2 Figure 16 - Diag Blanking time (µS) Vs Iout (A) (resistive load - see Fig. 6) www.irf.com 3 1.00E-06 0 5 10 15 20 25 30 35 Figure 17 - Icc (mA) Vs Vcc (V) 9 IPS521/IPS521S Case Outline 5 Lead - TO220 IRGB 01-3042 01 Tape & Reel 5 Lead - D2PAK (SMD220) 01-3071 00 / 01-3072 00 10 www.irf.com IPS521/IPS521S Case Outline 5 Lead - D2PAK (SMD220) 01-3066 00 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd., Whyteleafe, Surrey CR3 0BL, United Kingdom Tel: ++ 44 (0) 20 8645 8000 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171-0021 Tel: 8133 983 0086 IR HONG KONG: Unit 308, #F, New East Ocean Centre, No. 9 Science Museum Road, Tsimshatsui East, Kowloon Hong Kong Tel: (852) 2803-7380 Data and specifications subject to change without notice. 3/27/2000 www.irf.com 11