B40C800DM thru B380C800DM Vishay General Semiconductor Glass Passivated Ultrafast Bridge Rectifier FEATURES • UL Recognition, file number E54214 • Ideal for automated placement • High surge current capability • Solder Dip 260 °C, 40 seconds ~ • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC ~ ~ TYPICAL APPLICATIONS General purpose use in ac-to-dc bridge full wave rectification for SMPS, Lighting Ballaster, Adapter, Battery Charger, Home Appliances, Office Equipment, and Telecommunication applications. ~ Case Style DFM MAJOR RATINGS AND CHARACTERISTICS IF(AV) 0.9 A VRRM 65 V to 600 V IFSM 45 A IR 10 µA VF 1.0 V Tj max. 125 °C MECHANICAL DATA Case: DFM Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002B and JESD22-B102D E3 suffix for commercial grade Polarity: As marked on body MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum RMS input voltage R + C-load Maximum average forward output current for free air operation at TA = 45 °C R + L-load C-load SYMBOL B40 C800DM B80 C800DM B125 C800DM B250 C800DM B380 C800DM UNIT VRRM 65 125 200 400 600 V VRMS 40 80 125 250 380 V 0.9 0.8 IF(AV) A Maximum DC blocking voltage VDC 65 125 200 400 600 V Maximum peak working voltage VRWM 90 180 300 600 900 V 100 200 350 650 1000 Maximum non-repetitive peak voltage VRSM Maximum repetitive peak forward surge current IFRM 10 Peak forward surge current single sine wave on rated load IFSM 45 A I2t 10 A2sec Rating for fusing at Tj = 125 °C (t < 100 ms) Minimum series resistor C-load at VRMS = ± 10 % Maximum load capacitance Operating junction temperature range Storage temperature range Document Number 88533 09-Oct-06 + 50 % - 10 % V A RT 1.0 2.0 4.0 8.0 12 Ω CL 5000 2500 1000 500 200 µF TJ - 40 to + 125 °C TSTG - 40 to + 150 °C www.vishay.com 1 B40C800DM thru B380C800DM Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage drop per diode SYMBOL at 0.9 A Maximum reverse current at rated repetitive peak voltage per diode B40 C800DM B80 C800DM B125 C800DM B250 C800DM B380 C800DM UNIT VF 1.0 V IR 10 µA THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL B40 C800DM B80 C800DM B125 C800DM RθJA RθJL Typical thermal resistance (1) B250 C800DM B380 C800DM 40 15 UNIT °C/W Note: (1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.5 x 0.5" (13 x 13 mm) copper pads ORDERING INFORMATION PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE B38C800DM-E3/45 0.416 45 50 Tube RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 1.0 50 to 60 Hz Resistive or Inductive Load 0.8 Capacitive Load 0.6 0 - 10 µF 10 - 100 µF > 100 µF 0.4 Mounted on P.C.B. with 0.06" (1.5 mm) Lead Length Copper Pads 0.51 x 0.51" (13 x 13 mm) 0.2 Average Forward Output Current (A) Average Forward Output Current (A) 1.0 50 to 60 Hz Resistive or Inductive Load 0.8 Capacitive Load 0 - 10 µF 10 - 100 µF > 100 µF 0.6 0.4 Mounted on P.C.B. with 0.06" (1.5 mm) Lead Length Copper Pads 0.51 x 0.51" (13 x 13 mm) 0.2 0 0 0 20 40 60 80 100 120 140 0 20 40 60 80 100 120 140 Ambient Temperature (°C) Ambient Temperature (°C) Figure 1. Derating Curves Output Rectified Current for B40C800D...B125C800DM Figure 2. Derating Curves Output Rectified Current for B250C800D...B360C800DM www.vishay.com 2 Document Number 88533 09-Oct-06 B40C800DM thru B380C800DM Vishay General Semiconductor 10 Instantaneous Reverse Current (µA) Peak Forward Surge Current (A) 50 1.0 Cycle 40 Tj = 125 °C 10 ms Single Sine-Wave 30 20 10 0 Tj = 100 °C 1 0.1 Tj = 25 °C 0.01 0 100 10 0 60 40 80 100 Figure 5. Typical Reverse Leakage Characteristics Per Diode 100 10 Tj = 25 °C Pulse Width = 300 µs 1 % Duty Cycle Junction Capacitance (pF) Instantaneous Forward Surge Current (A) Figure 3. Maximum Non-Repetitive Peak Forward Surge Current Per Diode 1 0.1 0.01 0.4 20 Percent of Rated Peak Reverse Voltage (%) Number of Cycles at 50 Hz Tj = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 10 1 0.6 0.8 1.0 1.2 1.4 1 10 100 Reverse Voltage (V) Instantaneous Forward Voltage (V) Figure 6. Typical Junction Capacitance Per Diode Figure 4. Typical Forward Characteristics Per Diode PACKAGE OUTLINE DIMENSIONS in inches (millimeters) Case Style DFM 0.255 (6.5) 0.315 (8.00) 0.245 (6.2) 0.285 (7.24) 0.335 (8.51) 0.320 (8.12) 0.130 (3.3) 0.120 (3.05) 0.080 (2.03) 0.050 (1.27) 0.045 (1.14) 0.035 (0.89) 0.023 (0.58) 0.018 (0.46) 0.185 (4.69) 0.150 (3.81) 0.205 (5.2) 0.195 (5.0) Document Number 88533 09-Oct-06 0.075 (1.90) 0.055 (1.39) 0.013 (3.3) 0.0086 (0.22) 0.350 (8.9) 0.300 (7.6) www.vishay.com 3 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1