MBR10H150CT, MBRF10H150CT & SB10H150CT-1 Vishay General Semiconductor Dual Common-Cathode High-Voltage Schottky Rectifier Low Leakage Current 5.0 µA FEATURES ITO-220AB TO-220AB • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • High frequency operation 1 2 3 1 2 • Solder dip 260 °C, 40 seconds 3 MBRF10H150CT MBR10H150CT • Component in accordance to RoHS 2002/95/EC TO-262AA and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency inverters, free-wheeling and polarity protection applications. 1 3 2 SB10H150CT-1 PIN 1 PIN 2 PIN 3 CASE MECHANICAL DATA Case: TO-220AB, ITO-220AB, TO-262AA Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per PRIMARY CHARACTERISTICS IF(AV) 2x5A J-STD-002B and JESD22-B102D VRRM 150 V E3 suffix for commercial grade IFSM 160 A VF 0.72 V Tj 175 °C Mounting Torque: 10 in-lbs maximum Polarity: As marked MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL MBR10H150CT UNIT Maximum repetitive peak reverse voltage VRRM 150 V Working peak reverse voltage VRWM 150 V Maximum DC blocking voltage VDC 150 V Total device per diode IF(AV) 10 5 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 160 A Peak repetitive reverse current per diode at tp = 2 µs, 1 kHz IRRM 1.0 A Peak non-repetitive reverse surge energy per diode (8/20 µs waveform) ERSM 10 mJ Maximum average forward rectified current (see Fig. 1) Non-repetitive avalanche energy per diode at 25 °C, IAS = 1.5 A, L = 10 mH EAS 11.25 mJ Voltage rate of change (rated VR) dv/dt 10000 V/µs TJ, TSTG - 65 to + 175 °C VAC 1500 V Operating junction and storage temperature range Isolation voltage (ITO-220AB only) From terminals to heatsink t = 1 minute Document Number: 88779 Revision: 27-Jul-07 www.vishay.com 1 MBR10H150CT, MBRF10H150CT & SB10H150CT-1 Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL VALUE at IF = 5.0 A, TJ = 25 °C Maximum instantaneous forward voltage per diode (1) at IF = 5.0 A, TJ = 125 °C 0.72 VF at IF = 10 A, TJ = 25 °C V 0.96 at IF = 10 A, TJ = 125 °C Maximum reverse current per diode at working peak reverse voltage (1) UNIT 0.88 0.80 TJ = 25 °C 5.0 IR TJ = 125 °C µA mA 1.0 Note: (1) Pulse test: 300 µs pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL MBR MBRF MBRB UNIT RθJC 2.4 4.5 2.4 °C/W Typical thermal resistance per diode ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB MBR10H150CT-E3/45 2.06 45 50/Tube Tube ITO-220AB MBRF10H150CT-E3/45 2.20 45 50/Tube Tube TO-262AA SB10H150CT-1E3/45 1.58 45 50/Tube Tube RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 12 200 Peak Forward Surge Current (A) Average Forward Current (A) MBR, MBRB 10 MBRF 8 6 4 2 TJ = TJ max. 8.3 ms Single Half Sine-Wave 180 160 140 120 100 80 60 40 20 0 0 25 50 75 100 125 150 Case Temperature (°C) Figure 1. Forward Derating Curve (Total) www.vishay.com 2 175 1 10 100 Number of Cycles at 60 Hz Figure 2. Maximum Non-Repetitive Peak Forward Surge Current Per Diode Document Number: 88779 Revision: 27-Jul-07 MBR10H150CT, MBRF10H150CT & SB10H150CT-1 Vishay General Semiconductor 10000 Junction Capacitance (pF) Instantaneous Forward Current (A) 100 TJ = 175 °C 10 TJ = 125 °C TJ = 75 °C 1 1000 100 TJ = 25 °C 0.1 10 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1 Figure 3. Typical Instantaneous Forward Characteristics Per Diode 100 Figure 5. Typical Junction Capacitance Per Diode 10000 100 Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (µA) 10 Reverse Voltage (V) Instantaneous Forward Voltage (V) TJ = 175 °C 1000 TJ = 125 °C 100 10 TJ = 75 °C 1 TJ = 25 °C 0.1 0.01 10 20 30 40 50 60 70 80 90 100 Percent of Rated Peak Reverse Voltage (%) Figure 4. Typical Reverse Characteristics Per Diode Document Number: 88779 Revision: 27-Jul-07 10 MBRF MBR, MBRB 1 0.1 0.01 0.1 1 10 100 t - Pulse Duration (s) Figure 6. Typical Transient Thermal Impedance Per Diode www.vishay.com 3 MBR10H150CT, MBRF10H150CT & SB10H150CT-1 Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) ITO-220AB T O -220AB 0.055 (1.40) 0.047 (1.20) 0.398 (10.10) 0.382 (9.70) 0.343 (8.70) Typ. 0.185 (4.70) 0.169 (4.30) 0.055 (1.40) 0.049 (1.25) 0.150 (3.80) Dia. 0.139 (3.54) 0.114 (2.90) 0.106 (2.70) 0.408 (10.36) 0.392 (9.96) 1.29 (3.28) Dia. 1.21 (3.08) 0.138 (3.50) 0.122 (3.10) 0.154 (3.90) 0.138 (3.50) 0.067 (1.70) Typ. 0.331 (8.40) Typ. 1 PIN 2 3 0.118 (3.00) Typ. 0.634 (16.10) 0.618 (15.70) 0.270 (6.88) 0.255 (6.48) 0.638 (16.20) 0.598 (15.20) 0.370 (9.40) 0.354 (9.00) 0.630 (16.00) 0.614 (15.60) 1.161 (29.48) 1.106 (28.08) 1 0.102 (2.60) 0.087 (2.20) PIN 2 0.264 (6.70) 0.248 (6.50) 0.320 (8.12) 0.304 (7.72) 0.100 (2.54) Typ. 0.633 (16.07) 0.601 (15.67) 3 0.523 (13.28) 0.507 (12.88) 0.117 (2.96) 0.101 (2.56) 0.035 (0.90) 0.028 (0.70) 0.064 (1.62) 0.056 (1.42) 0.200 (5.08) Typ. 0.193 (4.90) 0.177 (4.50) 0.108 (2.74) 0.092 (2.34) 0.396 (10.05) 0.372 (9.45) 0.024 (0.60) 0.018 (0.45) 0.039 (1.00) 0.024 (0.60) 0.100 (2.54) Typ. 0.058 (1.47) Max. 0.200 (5.08) Typ. 0.024 (0.60) 0.018 (0.45) TO-262AA 0.398 (10.10) 0.382 (9.70) 0.055 (1.40) 0.039 (1.00) K 0.370 (9.40) 0.354 (9.00) 1 PIN 2 3 0.185 (4.70) 0.169 (4.30) 0.055 (1.40) 0.049 (1.25) 0.425 (10.80) 0.393 (10.00) 0.488 (12.4) 0.472 (12.00) 0.102 (2.60) 0.087 (2.20) 0.035 (0.90) 0.028 (0.70) 0.100 (2.54) Typ. www.vishay.com 4 0.523 (13.28) 0.507 (12.88) 0.405 (10.28) 0.389 (9.88) 0.062 (1.57) 0.054 (1.37) 0.024 (0.60) 0.018 (0.45) 0.200 (5.08) Typ. 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Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1