V40100PG New Product Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.420 V at IF = 5 A FEATURES • • • • • • 3 2 1 TO-247AD (TO-3P) PIN 1 PIN 2 PIN 3 CASE Trench MOS Schottky Technology Low forward voltage drop, low power losses High efficiency operation Low thermal resistance Solder Dip 260 °C, 40 seconds Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency inverters, switching power supplies, free-wheeling diodes, oring diode, dc-to-dc converters and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS IF(AV) 2 x 20 A VRRM 100 V IFSM 250 A VF at IF = 20 A 0.67 V Tj max. 150 °C MECHANICAL DATA Case: TO-247AD (TO-3P) Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002B and JESD22-B102D E3 suffix for commercial grade Polarity: As marked Mounting Torque: 10 in-lbs Maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL V40100PG UNIT VRRM 100 V IF(AV) 40 20 A Peak forward surge current 10 ms single half sine-wave superimposed on rated load per diode IFSM 250 A Peak repetitive reverse current per diode at tp = 2 µs, 1 kHz IRRM 1.0 A dv/dt 10000 V/µs TJ, TSTG - 40 to + 150 °C Maximum repetitive peak reverse voltage per device per diode Maximum average forward rectified (see Fig. 1) Voltage rate of change (rated VR) Operating junction and storage temperature range ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Breakdown voltage Instantaneous forward voltage (1) per diode Document Number 88972 18-Aug-06 TEST CONDITIONS at IR = 1.0 mA TJ = 25 °C at IF = 5 A IF = 10 A IF = 20 A TJ = 25 °C at IF = 5 A IF = 10 A IF = 20 A SYMBOL TYP. MAX. UNIT V(BR) 100 (minimum) - V 0.490 0.572 0.731 0.81 0.42 0.50 0.67 0.73 VF TJ = 125 °C V www.vishay.com 1 V40100PG Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS at VR = 70 V TJ = 25 °C TJ = 125 °C at VR = 100 V TJ = 25 °C TJ = 125 °C Reverse current at rated VR (1) per diode SYMBOL IR TYP. MAX. UNIT 8.4 7.4 300 15 µA mA 40.5 18.2 500 35 µA mA Note: (1) Pulse test: 300 µs pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance per diode SYMBOL V40100PG UNIT RθJC 2.0 °C/W ORDERING INFORMATION PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE V40100PG-E3/45 6.109 45 30/Tube Tube RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 50 16 D = 0.8 D = 0.5 14 40 Average Power Loss (W) Average Forward Current (A) Resistive or Inductive Load 30 20 10 D = 0.3 D = 1.0 D = 0.2 12 10 D = 0.1 8 T 6 4 D = tp/T 2 tp 0 0 0 25 50 75 100 125 150 175 0 5 10 15 20 25 Case Temperature (°C) Average Forward Current (A) Figure 1. Forward Current Derating Curve Figure 2. Forward Power Loss Characteristics Per Diode www.vishay.com 2 Document Number 88972 18-Aug-06 V40100PG Vishay General Semiconductor 10000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p TJ = TJ max. 8.3 ms Single Half Sine-Wave 250 Junction Capacitance (pF) Peak Forward Surge Current (A) 300 200 150 100 1000 50 0 1 10 100 0.1 100 1 Number of Cycles at 60 Hz Figure 3. Maximum Non-Repetitive Peak Forward Surge Current Per Diode 100 Figure 6. Typical Junction Capacitance Per Diode 100 10 Transient Thermal Impedance (°C/W) Instantaneous Forward Current (A) 10 Reverse Voltage (V) TJ = 150 °C TJ = 125 °C 10 1 TJ = 25 °C 0.1 0.01 0 0.2 0.4 0.6 1.0 0.8 Junction to Case 1 0.1 0.01 0.1 1 10 100 t - Pulse Duration (s) Instantaneous Forward Voltage (V) Figure 4. Typical Instantaneous Forward Characteristics Per Diode Figure 7. Typical Transient Thermal Impedance Per Diode Instantaneous Reverse Current (mA) 100 TJ = 150 °C 10 TJ = 125 °C 1 0.1 0.01 TJ = 25 °C 0.001 10 20 30 40 50 60 70 80 90 100 Percent of Rated Peak Reverse Voltage (%) Figure 5. Typical Reverse Characteristics Per Diode Document Number 88972 18-Aug-06 www.vishay.com 3 V40100PG Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-247AD (TO-3P) 0.645 (16.4) 0.625 (15.9) 0.245 (6.2) 0.225 (5.7) 0.323 (8.2) 0.313 (7.9) 0.203 (5.16) 0.193 (4.90) 30 0.170 (4.3) 0.840 (21.3) 10 10 TYP. BOTH SIDES 0.142 (3.6) 0.138 (3.5) 0.820 (20.8) 1 2 1 REF. BOTH SIDES 3 0.086 (2.18) 0.076 (1.93) 0.127 (3.22) 0.160 (4.1) 0.140 (3.5) 0.078 REF (1.98) 0.117 (2.97) 0.118 (3.0) 0.108 (2.7) 0.795 (20.2) 0.775 (19.6) 0.225 (5.7) 0.205 (5.2) www.vishay.com 4 0.048 (1.22) 0.044 (1.12) 0.030 (0.76) 0.020 (0.51) PIN 1 PIN 2 PIN 3 CASE Document Number 88972 18-Aug-06 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1