BAS85 Schottky Diodes FEATURES MiniMELF ♦ For general purpose applications Cathode Mark .142 (3.6) .134 (3.4) ∅ .063 (1.6) .055 (1.4) ♦ This diode features low turn-on voltage. .019 (0.48) .011 (0.28) The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. ♦ This diode is also available in a DO-35 case with type designation BAT85. MECHANICAL DATA Dimensions in inches and (millimeters) Case: MiniMELF Glass Case (SOD-80) Weight: approx. 0.05 g MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Value Unit Continuous Reverse Voltage VR 30 V Forward Continuous Current at Tamb = 25 °C IF 2001) mA Peak Forward Current at Tamb = 25 °C IFM 3001) mA Surge Forward Current at tp < 1 s, Tamb = 25 °C IFSM 6001) mA Power Dissipation at Tamb = 65 °C Ptot 2001) mW Junction Temperature Tj 125 °C Storage Temperature Range TS –55 to +150 °C 1) Valid provided that electrodes are kept at ambient temperature. 4/98 BAS85 ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Min. Typ. Max. Unit V(BR)R 30 – – V VF VF VF VF VF – – – – – – – – 0.5 – 0.24 0.32 0.4 – 0.8 V V V V V Leakage Current at VR = 25 V IR – 0.2 2 µA Capacitance at VR = 1 V, f = 1 MHz Ctot – – 10 pF Thermal Resistance Junction to Ambient Air RthJA – – 4301) K/W Reverse Recovery Time from IF = 10 mA to IR = 10 mA to IR = 1 mA trr – – 5 ns Reverse Breakdown Voltage tested with 10 µA Pulses Forward Voltage Pulse Test tp < 300 µs, δ < 2% at IF = 0.1 mA at IF = 1 mA at IF = 10 mA at IF = 30 mA at IF = 100 mA 1) Valid provided that electrodes are kept at ambient temperature.