L L 48 Small-Signal Diode Schottky Diode Features For general purpose applications. This diode features low turn-on voltage and high break-down voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. This diode is also available in the DO-35 case with type designation BAT48. Mechanical Data Case: MiniMELF Glass Case (SOD-80) Weight: approx. 0.05g Cathode Band Color: Green Maximum Ratings and Thermal Characteristics (Ratings at 25oC ambient temperature unless otherwise specified.) Parameter Repetitive peak reverse voltage o Forward continuous current at Tamb=25 C Symbol Value Unit VRRM 40 Volts IF Repetitive peak forward current at tp<1s, δ<0.5, Tamb=25oC IFRM o 350 (1) mA 1.0 (1) Amp Amps mW Surge forward current at tp<10ms, Tamb=25 C IFSM 7.5 (1) Power dissipation (1) at Tamb=80oC Ptot 330 (1) Thermal resistance junction to ambient air RθJA 300 (1) Junction temperature Ambient operating temperature range Storage temperature range Notes: o C/W Tj 125 o C Tamb -65 to +125 o C -65 to +150 o C TS 1. Valid provided that leads at a distance of 4mm from case are kept at ambient temperature 705 Electrical Characteristics (TJ=25oC unless otherwise noted.) Parameter Symbol Test Condition Min. Typ. Max. Unit V(BR)R 100uA Pulses 40 - - Volts IR VR=10V VR=10V, Tj=60OC VR=20V VR=20V, Tj=60OC VR=40V VR=40V, Tj=60OC - - 2 15 5 25 25 50 uA Forward voltage pulse test tp<300us, δ<2% VF IF=0.1mA IF=1.0mA IF=10mA IF=50mA IF=200mA IF=500mA - - 0.25 0.30 0.40 0.50 0.75 0.90 Volt Capacitance Ctot VR=1V, f=1MHz - 12 - pF Reverse breakdown voltage Leakage current pulse test tp<300us, δ<2% Notes: 1. Valid provided that leads at a distance of 4mm from case are kept at ambient temperature 706