NEW PRODUCT NEW PRODUCT NEW PRODUCT BAT48 Schottky Diodes FEATURES ♦ For general purpose applications. min. 1.083 (27.5) ♦ These diodes feature very low turn-on voltage and fast switching. These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. max. ∅.079 (2.0) Cathode Mark ♦ This diode is also available in the Mini-MELF case with type designations LL46. . min. 1.083 (27.5) max. .150 (3.8) DO-35 max. ∅.020 (0.52) MECHANICAL DATA Dimensions in inches and (millimeters) Case: DO-35 Glass Case Weight: approx. 0.13 g MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Value Unit Repetitive Peak Reverse Voltage VRRM 40 V Forward Continuous Current at Tamb = 25 °C IF 3501) mA Repetitive Peak Forward Current at tp < 1 s, δ < 0.5, Tamb = 25 °C IFRM 11) A Surge Forward Current at tp < 10 ms, Tamb = 25 °C IFSM 7.51) A Power Dissipation1) at Tamb = 65 °C Ptot 3301) mW Junction Temperature Tj 125 °C Ambient Operating Temperature Range Tamb –65 to +125 °C Storage Temperature Range TS –65 to +150 °C 1) Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature 5/98 216 BAT48 ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Min. Typ. Max. Unit V(BR)R 40 – – V Forward Voltage Pulse Test tp < 300 µs, δ < 2% at IF = 0.1 mA at IF = 10 mA at IF = 250 mA VF VF VF – – – – – – 0.25 0.40 0.90 V V V Leakage Current Pulse Test tp < 300 µs, δ < 2% at VR = 10 V at VR = 10 V, Tj = 60 °C at VR = 20 V at VR = 20 V, Tj = 60 °C at VR = 40 V at VR = 40 V, Tj = 60 °C IR IR IR IR IR IR – – – – – – – – – – – – 2 15 5 25 25 50 µA µA µA µA µA µA Capacitance at VR = 1 V, f = 1 MHz Ctot – 12 – pF Thermal Resistance Junction to Ambient Air RthJA – – 0.31) K/mW Reverse Breakdown Voltage tested with 100 µA Pulses 1) Valid provided that leads at a distance of 4 mm from the case are kept at ambient temperature (DO-35) 217