VISHAY BAT48

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BAT48
Schottky Diodes
FEATURES
♦ For general purpose applications.
min. 1.083 (27.5)
♦ These diodes feature very low
turn-on voltage and fast switching.
These devices are protected by a PN
junction guard ring against excessive
voltage, such as electrostatic discharges.
max. ∅.079 (2.0)
Cathode
Mark
♦ This diode is also available in the Mini-MELF
case with type designations LL46.
.
min. 1.083 (27.5)
max. .150 (3.8)
DO-35
max. ∅.020 (0.52)
MECHANICAL DATA
Dimensions in inches and (millimeters)
Case: DO-35 Glass Case
Weight: approx. 0.13 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Value
Unit
Repetitive Peak Reverse Voltage
VRRM
40
V
Forward Continuous Current at Tamb = 25 °C
IF
3501)
mA
Repetitive Peak Forward Current
at tp < 1 s, δ < 0.5, Tamb = 25 °C
IFRM
11)
A
Surge Forward Current at tp < 10 ms, Tamb = 25 °C
IFSM
7.51)
A
Power Dissipation1) at Tamb = 65 °C
Ptot
3301)
mW
Junction Temperature
Tj
125
°C
Ambient Operating Temperature Range
Tamb
–65 to +125
°C
Storage Temperature Range
TS
–65 to +150
°C
1)
Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature
5/98
216
BAT48
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Min.
Typ.
Max.
Unit
V(BR)R
40
–
–
V
Forward Voltage
Pulse Test tp < 300 µs, δ < 2%
at IF = 0.1 mA
at IF = 10 mA
at IF = 250 mA
VF
VF
VF
–
–
–
–
–
–
0.25
0.40
0.90
V
V
V
Leakage Current
Pulse Test tp < 300 µs, δ < 2%
at VR = 10 V
at VR = 10 V, Tj = 60 °C
at VR = 20 V
at VR = 20 V, Tj = 60 °C
at VR = 40 V
at VR = 40 V, Tj = 60 °C
IR
IR
IR
IR
IR
IR
–
–
–
–
–
–
–
–
–
–
–
–
2
15
5
25
25
50
µA
µA
µA
µA
µA
µA
Capacitance
at VR = 1 V, f = 1 MHz
Ctot
–
12
–
pF
Thermal Resistance Junction to Ambient Air
RthJA
–
–
0.31)
K/mW
Reverse Breakdown Voltage
tested with 100 µA Pulses
1)
Valid provided that leads at a distance of 4 mm from the case are kept at ambient temperature (DO-35)
217