DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BFR54 NPN medium frequency transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jul 11 Philips Semiconductors Product specification NPN medium frequency transistor BFR54 FEATURES PINNING • Low current (max. 100 mA) PIN • Low voltage (max. 15 V). APPLICATIONS DESCRIPTION 1 emitter 2 base 3 collector • Active probes • Frequency multipliers • Linear amplifiers. handbook, halfpage1 3 2 3 2 DESCRIPTION NPN medium frequency transistor in a TO-92; SOT54 plastic package. 1 MAM182 Fig.1 Simplified outline (TO-92; SOT54) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 40 V VCEO collector-emitter voltage open base − 15 V ICM peak collector current − 200 mA Ptot total power dissipation − 500 mW hFE DC current gain IC = 10 mA; VCE = 1 V 40 − fT transition frequency IC = 10 mA; VCE = 10 V; f = 100 MHz 500 − 1997 Jul 11 Tamb ≤ 25 °C 2 MHz Philips Semiconductors Product specification NPN medium frequency transistor BFR54 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 40 V VCEO collector-emitter voltage open base − 15 V VEBO emitter-base voltage open collector − 4.5 V IC collector current (DC) − 100 mA ICM peak collector current − 200 mA Ptot total power dissipation − 500 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Tamb ≤ 25 °C; note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient note 1 VALUE UNIT 250 K/W Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT IE = 0; VCB = 20 V − − 400 nA IE = 0; VCB = 20 V; Tj = 125 °C − − 30 µA IC = 0; VEB = 2 V − − 100 nA IC = 10 mA; VCE = 1 V 40 − − collector-emitter saturation voltage IC = 10 mA; IB = 1 mA − − 250 mV base-emitter saturation voltage IC = 10 mA; IB = 1 mA 700 − 850 mV Cc collector capacitance IE = ie = 0; VCB = 5 V; f = 1 MHz − − 4 pF ICBO collector cut-off current IEBO emitter cut-off current hFE DC current gain VCEsat VBEsat Ce emitter capacitance IC = ic = 0; VEB = 1 V; f = 1 MHz − − 4.5 pF Cre feedback capacitance IC = 0 mA; VCB = 10 V; f = 1 MHz − 1.6 − pF fT transition frequency VCE = 10 V; f = 100 MHz IC = 10 mA 500 − − MHz IC = 40 mA 490 − − MHz 1997 Jul 11 3 Philips Semiconductors Product specification NPN medium frequency transistor BFR54 PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads SOT54 c E d A L b 1 e1 2 D e 3 b1 L1 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b1 c D d E e e1 L L1(1) mm 5.2 5.0 0.48 0.40 0.66 0.56 0.45 0.40 4.8 4.4 1.7 1.4 4.2 3.6 2.54 1.27 14.5 12.7 2.5 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 1997 Jul 11 REFERENCES IEC JEDEC EIAJ TO-92 SC-43 4 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification NPN medium frequency transistor BFR54 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Jul 11 5 Philips Semiconductors Product specification NPN medium frequency transistor BFR54 NOTES 1997 Jul 11 6 Philips Semiconductors Product specification NPN medium frequency transistor BFR54 NOTES 1997 Jul 11 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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