BYT52. Vishay Telefunken Fast Silicon Mesa Rectifiers Features D D D D Glass passivated junction Hermetically sealed package Low reverse current Soft recovery characteristics Applications 94 9539 Fast rectifiers and switches Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage g =Repetitive peak reverse voltage Test Conditions Peak forward surge current Type BYT52A BYT52B BYT52D BYT52G BYT52J BYT52K BYT52M tp=10ms, half sinewave on PC board l=10mm, TL=25°C Average forward current Average forward current Junction and storage temperature range Symbol VR=VRRM VR=VRRM VR=VRRM VR=VRRM VR=VRRM VR=VRRM VR=VRRM IFSM Value 50 100 200 400 600 800 1000 50 Unit V V V V V V V A IFAV IFAV Tj=Tstg 0.85 1.4 –65...+175 A A °C Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions l=10mm, TL=constant on PC board with spacing 25mm Symbol RthJA RthJA Value 45 100 Unit K/W K/W Electrical Characteristics Tj = 25_C Parameter Forward voltage Reverse current Reverse recovery time Document Number 86029 Rev. 2, 24-Jun-98 Test Conditions IF=1A VR=VRRM VR=VRRM, Tj=150°C IF=0.5A, IR=1A, iR=0.25A Type Symbol VF IR IR trr Min Typ Max 1.3 5 150 200 Unit V mA mA ns www.vishay.de • FaxBack +1-408-970-5600 1 (4) BYT52. Vishay Telefunken 1000 120 100 I R – Reverse Current ( mA ) R thJA – Therm. Resist. Junction / Ambient ( K/W ) Characteristics (Tj = 25_C unless otherwise specified) 80 60 l l 40 100 Scattering Limit 10 1 20 TL=constant 0 0 5 10 15 20 25 30 l – Lead Length ( mm ) 94 9552 0 40 80 120 160 200 Tj – Junction Temperature ( °C ) 94 9448 Figure 1. Max. Thermal Resistance vs. Lead Length Figure 4. Reverse Current vs. Junction Temperature 10 1.2 v v VR = VR RM f 1kHz RthJA 100K/W PC Board 1.0 0.8 IF – Forward Current ( A ) I FAV– Average Forward Current ( A ) VR = VR RM 0.1 0.6 0.4 Tj = 25°C Scattering Limit 1 0.1 0.2 0 0.01 0 40 80 120 160 200 Tamb – Ambient Temperature ( °C ) 94 9447 0 Figure 2. Max. Average Forward Current vs. Ambient Temperature 0.6 1.2 1.8 2.4 3.0 VF – Forward Voltage ( V ) 94 9449 Figure 5. Forward Current vs. Forward Voltage I FAV– Average Forward Current ( A ) 20 CD – Diode Capacitance ( pF ) 2.0 v VR = VR RM f 1kHz RthJA=45K/W l=10mm 1.6 1.2 0.8 0.4 0 12 8 4 0 0 94 9446 Tj = 25°C 16 40 80 120 160 200 Tamb – Ambient Temperature ( °C ) Figure 3. Max. Average Forward Current vs. Ambient Temperature www.vishay.de • FaxBack +1-408-970-5600 2 (4) 0.1 94 9451 1 10 100 VR – Reverse Voltage ( V ) Figure 6. Typ. Diode Capacitance vs. Reverse Voltage Document Number 86029 Rev. 2, 24-Jun-98 BYT52. Vishay Telefunken Dimensions in mm ∅ 3.6 max. Sintered Glass Case SOD 57 Weight max. 0.5 g 26 min. Document Number 86029 Rev. 2, 24-Jun-98 Cathode Identification 4.2 max. 94 9538 technical drawings according to DIN specifications ∅ 0.82 max. 26 min. www.vishay.de • FaxBack +1-408-970-5600 3 (4) BYT52. Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 www.vishay.de • FaxBack +1-408-970-5600 4 (4) Document Number 86029 Rev. 2, 24-Jun-98