BTS 630 PWM Power Unit The device allows continuous power control for lamps,LEDs or inductive loads. • • • • • • • • • • • • Highside switch Overtemperatur protection Short circuit / overload protection through pulse widt reduction and overload shutdown Load dump protection Undervoltage and overvoltage shutdown with auto-restart and hysteresis Reverse battery protection 1) Timing frequency adjustable Controlled switching rise and fall times Maximum current internally limited Protection against loss of GND 2) Electrostatic discharge (ESD) protection Package: TO220/7 and TO220/7 E3128 (SMD), Pin 4 is shorted to the mounting flange 7 1 Standard Note: Switching frequency is programmed with an external capacitor. Type Ordering Code Marking Package BTS630 (Standard) Q67060-S6305-A2 - TO220/7 BTS630 Q67060-S6305-A3 - TO220/7, E3230 Maximum Ratings Parameter Symbol Values Unit Active overvoltage prodection Vbb (AZ) >40 V Short circuit current ISC self-limited - Input current (DC) ICt 2 mA Pin1 (Ct) and pin19 (VC) IVC 2 mA Operating temperature range Tj -40...+150 iC Storage temperature range Tstg -50...+150 Ptot 75 W Rth JC ≤ 1.67 K/W Rth JA ≤ 75 Power dissipation Ta=25°C Thermal resistance chip-case chip-ambient 1) 2) With 150Ω resistor in signal GND connection. Potential between signal GND and load GND >0.5V Semiconductor Group 1 12.96 BTS 630 Block Diagram Over / UnderOvervoltage Prodtection Temperature voltage Detection Timing Pulse - width Generator Comparator Sensor (4) Pump and Logic Current Limiting Voltage Regulator (1) (5) (3) GND Ct (2) (6) VREF VC Bootstrap Capacitor Signal GND Load GND Pin Definitions and Funktions 6 7 Symbol GND VC VREF Vbb Ct CB OUT OUT CB Timing Cap. Pin 1 2 3 4 5 (7) Pin Configuration (top view) Funktions Ground Voltage for PWM-Control Reference Voltage Supply voltage Timing capacitor for frequency Bootstrap capacitor Output 1234567 Semiconductor Group 2 Vbb BTS 630 Electrical Characteristics at Tj = 25 iC, unless otherwise specified.CBootstrap = 22nF Parameter On-state resistance IL=3A, Vbb=12V Operating voltage Tj = -40 ...+150iC Nominal current, calculated value ISO-standard:Vbb-VOUT ≤ 0.5V, Tc=85°C Load current limit Vbb-VOUT> 1V Undervoltage shutdown IL = 3A Overvoltage shutdown IL = 3A Max.output voltage (RMS) IL = 3A, Vbb > 12 V Reference voltage IREF= 10mA Reference current pin 18 (GND) to pin 20 (VREF) short Internal current consumption during operation, measured in PWM gap Bootstrap voltage, pin 2 (CB1) to pin 3 (CB2) Vbb = 12 V, PWM frequency Tc = -40 ... +150 °C, Ct = 68 nF Max. pulse duty factor IL = 3A, VC=0V , (50% VOUT) Min. pulse duty factor IL = 3A, VC=0V , (50% VOUT) Slew rate "on" 10 ... 90% IOUT Slew rate "off" 90 ... 10% IOUT Thermal overload trip temperature Symbol RON min. - Vbb 5.9 IL-ISO 5.8 ILLim 1) 16.9 - - 20 2) Unit mΩ V - A - A Vbb(LOW) 3 4.2 5.4 V Vbb(HI) 17 18 19 V VRMSmax 12 14 V VREF 2 3 V - IREF - IR - VB - fPWM 50 Dimax 95 Dimin 150 5 10 100 98 - mA - - - 8 mA V Hz % 14 % du/dt(on) 20 - 120 mV/µs du/dt(off) 20 - 120 mV/µs - - Tj 1) Note: undervoltage shutdown 2) Note: overvoltage shutdown Semiconductor Group Values typ. max. 70 3 150 °C BTS 630 Circuits Analog Logic-InputVC (2) V REF (3) VC (2) Voltage Regulator 2m A GND (1) Pulse-width Comparator 6V max. 2mA Triangular WaveformGenerator Input C t (5) V bb 6m A Ct (5) GND (1) Timing Generator 6V max. 2mA Voltage Sensor (typ) Undervoltage Sensor Overvoltage Sensor +V bb V bb < 4.2 V +V bb Signal to the logic unit V bb > 18 V GND Semiconductor Group GND 4 Signal to the logic unit BTS 630 Package Outline TO220/7 Dimensions in mm Package Outline TO220/7 E3230 Dimensions in mm Semiconductor Group 5 BTS 630 Application Note Dimming of dashboard lighting + 4 3 25 k O 2 220nF V bb VREF BTS630 VC GND 1 Ct CB 5 OUT 6 7 68nF 22nF Load 150 O 150 O Resistor for reverse battery and load dump prodection Semiconductor Group 6 V bb BTS 630 mΩ Typ.on-state resistance R ON= f (T C ) Typ. overvoltage shutdown V bb(HI) = f (T C ) V 140 20,0 120 19,5 100 19,0 80 18,5 60 18,0 40 17,5 20 17,0 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 TC °C TC °C Typ. Load current limit I LLim = f (T C ) A Typ. overvoltage shutdown V bb(HI) = f (T C ) V 30 20,0 25 19,5 19,0 20 18,5 15 18,0 10 17,5 5 -50 -25 0 25 50 75 100 125 150 17,0 T C °C -50 -25 0 25 50 TC °C Semiconductor Group 7 75 100 125 150 BTS 630 Typ. min. puls duty factor D im in = f (T C ) % 15 Typ. max. puls duty factor D im ax = f (T C ) % 100 14 13 99 12 11 98 10 9 97 8 7 96 6 5 95 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 TC °C 75 100 125 150 125 150 TC °C Typ. PWM Frequency f PWM = f (T C ) Hz 50 Typ. max. output voltage V RMSm ax = f (T C ), Vbb > 12V V 100 14,0 90 13,5 80 13,0 70 12,5 60 50 12,0 -50 -25 0 25 50 75 100 125 150 -50 TC °C Semiconductor Group -25 0 25 50 TC °C 8 75 100