INFINEON Q67000-S227

Mini PROFET® BSP 350
MiniPROFET
• High-side switch
• Short-circuit protection
• Overtemperature protection with hysteresis
• Overload protection
• Overvoltage protection
• Reverse battery protection1)
• Switching inductive load
• Clamp of negative output voltage with inductive loads
• Maximum current internally limited
4
3
2
1
Package: SOT 223
Type
BSP 350
Pins:
1
IN
Ordering code
Q67000-S227
2
Vbb
3
OUT
4
Vbb
Maximum Ratings
Parameter
Supply voltage
Load current
self-limited
Maximum current through input pin (DC)
Symbol Values
Vbb
50
IL
IL(SC)
IIN
±15
Unit
V
A
mA
see internal circuit diagram
Inductive load switch-off energy dissipation
Operating temperature range
Storage temperature range
Max. power dissipation (DC)2)
TA = 25 °C
Thermal resistance
chip - soldering point:
chip - ambient:2)
EAS
Tj
Tstg
Ptot
RthJS
RthJA
5
-40 ...+150
-55 ...+150
1.7
17
72
mJ
°C
W
K/W
+ V bb
2/4
Control
Circuit
OUT
3
R IN
IN
Temperature
Sensor
1
RL
GND
1)
2)
For 12 V applications only. Reverse load current only limited by connected load.
BSP 350 on epoxy pcb 40 mm x 40 mm x 1.5 mm with 6 cm2 copper area for Vbb connection
Semiconductor Group
1
04.97
BSP 350
Electrical Characteristics
Parameter and Conditions
Symbol
at Tj = 25 °C, Vbb = 13.5V unless otherwise specified
min
Load Switching Capabilities and Characteristics
On-state resistance (pin 2 to 3)
IL = 0.07 A, pin 1 = GND
Tj = 25°C
Tj = 150°C
Vbb = 6 V, Tj = 25°C
Nominal load current (pin 2 to 3)
ISO Standard: VON = Vbb - VOUT = 0.5 V
TS = 85 °C
Turn-on time
to 90% VOUT
Turn-off time
to 10% VOUT
RL = 270 Ω
Slew rate on
10 to 30% VOUT, RL = 270 Ω
Slew rate off
70 to 40% VOUT, RL = 270 Ω
Input
Tj = - 40...+150°C
OFF state input current
RL = 270 Ω, VOUT ≤ 0,1V
ON state input current, (pin 1 grounded)3)
Tj = - 40...+150°C
Operating Parameters
Operating voltage (pin 1 grounded)4)
Tj = - 40...+150°C
Leakage current (pin 2 to 3, pin 1 open) Tj = 25°C
Tj =150°C
3)
4)
Driver circuit must be capable to drive currents >1mA.
Below Vbb=4.5 V typ. without chargepump, Vout ≈ Vbb - 2 V
Semiconductor Group
2
Values
typ
Unit
max
----
4
8
5
5
10
10
Ω
0.07
--
--
A
ton
toff
---
60
70
100
140
µs
dV /dton
--
4
6
V/µs
-dV/dtoff
--
2
6
IIN(off)
--
--
0.05
mA
IIN(on)
--
0.3
1
mA
4.9
--
45
V
---
1
1.2
10
10
µA
RON
IL(ISO)
Vbb(on)
Ibb(off)
BSP 350
Parameter and Conditions
Symbol
at Tj = 25 °C, Vbb = 13.5V unless otherwise specified
Protection Functions
Current limit (pin 2 to 3)5)
min
Tj = 25°C
Tj = -40...+150°
Thermal overload trip temperature
Thermal hysteresis
Overvoltage protection
Tj =-40...+150°C
Output clamp (ind. load switch off)
at VOUT = Vbb - VON(CL)
Inductive load switch-off energy dissipation6)
Reverse battery resistor (pin 1 to 2)
Reverse Diode
Continious reverse drain current
Pulsed reverse drain current
Diode forward on voltage
IF = 0.2 A, IIN = ≤ 0.05 mA
Tj = 25°C
Tj = 25°C
IL(SC)
Values
typ
0.2
0.1
150
-50
--
0.5
--20
56
EAS
RIN
IS
ISM
VSD
Tjt
∆Tjt
Vbbin(AZ)
VON(CL)
56
°C
K
V
V
---
-1
5
--
mJ
kΩ
----
--0.9
0.2
0.8
1.2
A
A
V
load current limits onset at IL * Ron approx. 1V
short circuit protection: combination of current limit and thermal overload switch off
6)
while demagnetizing load inductance, dissipated energy is EAS= ∫(VON(CL) * iL(t) dt,
VON(CL)
2
approx. EAS= 1/2 * L * IL * (
)
VON(CL)-Vbb
3
max
1
1.2
-----
5)
Semiconductor Group
Unit
A
BSP 350
Max allowable power dissipation
Ptot = f (TA,TSP)
Ptot [W]
8
Typ. on state resistance (Vbb- pin to OUT pin)
RON = f (Vbb); IL = 70 mA; Tj = 25°C
RON [Ω]
8
7
7
6
6
5
5
T
SP
4
4
3
3
2
2
T A
1
1
0
0
0
25
50
75
100
125
150
TA, TSP[°C]
On state resistance (Vbb- pin to OUT pin)
RON = f (Tj);Vbb = 13.5 V;IL = 70 mA
RON [Ω]
10
0
5
10
15
20
25
Vbb [V]
Typ. short circuit current
IL(SC) = f(Tj); Vbb = 13.5V
ILSC [Α]
0.7
9
0.6
8
0.5
7
98%
6
0.4
5
typ
0.3
4
3
0.2
2
0.1
1
0
0
-50
-25
0
25
50
Semiconductor Group
75
100 125 150
TJ [°C]
-50
4
-25
0
25
50
75
100 125 150
TJ [°C]
BSP 350
Test circuit
Typ. short circuit current
IL(SC) = f(VON); Vbb = 13.5V; Tj = 25°C
ILSC [Α]
0.7
V
2/4
V
on
3
0.6
I
0.5
1
in
V
out
V
in
0.4
0.3
0.2
Turn on conditions
0.1
0
0
2
4
6
8
VON [V]
Typ. short circuit current
IL(SC) = f(t); Vbb = 13.5V
no heatsink; Parameter: TjStart
IL(SC)[mA]
1000
800
600
Chargepump threshold
VON = f (Vbb)
400
125°C
25°C
200
-40°C
4
2
0
-0,5
typ.
0,5
1,5
2,5
3,5
4,5
t[s]
Semiconductor Group
m ax.
5,5
2
5
4
6
8
bb
BSP 350
Package:
all dimensions in mm.
SOT 223/3:
Semiconductor Group
6