FFPF60SA60DS Features • • • • • Soft Recovery (tb / ta > 1.2) Fast Recovery (trr < 25ns) Reverse Voltage, 600V Forward Voltage (@ TC = 125°C), < 2.0 V Enhanced Avalanche Energy TO-220F-3L Applications • • • • • • 1 2 3 1 2 3 Switch Mode Power Supplies Hard Swithed PFC Boost Diode UPS Free wheeling Diode Motor Drive FWD SMPS FWD Snubber Diode Absolute Maximum Ratings (per leg) Symbol TC=25°C unless otherwise noted VRRM Parameter Peak Repetitive Reverse Voltage Value 600 VRWM Working Peak Reverse Voltage 600 V VR DC Blocking Voltage 600 V IF(AV) Average Rectified Forward Current 8 A IFSM Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave 80 A @ TC = 95 °C Units V PD Power Dissipation 26 W WAVL Avalanche Energy (1A, 40mH) 20 mJ TJ, TSTG Operating Junction and Storage Temperature - 65 to +150 °C Value 3.125 Units °C/W 62.5 °C/W Thermal Characteristics Symbol RθJC Parameter Maximum Thermal Resistance, Junction to Case RθJA Maximum Thermal Resistance, Junction to Ambient ©2004 Fairchild Semiconductor Corporation Rev. A, October 2004 FFPF60SA60DS StealthTM Rectifier Symbol TC=25 °C unless otherwise noted Parameter Maximum Instantaneous Forward Voltage IF = 8A IF = 8A VFM * Maximum Instantaneous Reverse Current @ rated VR IRM * Min. Typ. Max. TC = 25 °C TC = 125 °C - 2.0 1.6 2.4 2.0 TC = 25 °C TC = 125 °C - - 100 1000 Units V µA trr Maximum Reverse Recovery Time (IF =1A, di/dt = 100A/µs, VR = 30V) - - 25 ns trr Maximum Reverse Recovery Time (IF =8A, di/dt = 100A/µs, VR = 30V) - - 30 ns trr Irr Qrr Reverse Recovery Time Reverse Recovery Current Reverse Recovery Charge (IF =8A, di/dt = 200A/µs, VR = 390V) - 39 2 39 - ns A nC * Pulse Test: Pulse Width=300µs, Duty Cycle=2% Typical Characteristics 10 o o TC = 150 C 100 Reverse Current , I R [µA] Forward Current , IF [A] TC = 150 C o TC = 25 C o TC = 125 C o TC = 100 C 1 0.1 o TC = 125 C o 10 TC = 100 C 1 o 0.1 TC = 25 C 0.001 0.5 1.0 1.5 2.0 2.5 0 Forward Voltage , VF [V] 100 150 200 250 300 350 400 450 500 550 600 Reverse Voltage , VR [V] Figure 1. Typical Forward Voltage Drop Figure 2. Typical Reverse Current vs. Reverse Voltage vs. Forward Current 200 44 Reverse Recovery Time , trr [ns] Typical Capacitance at 0V = 169.3 pF Capacitance , Cj [pF] 50 150 100 50 0.1 1 10 Reverse Voltage , VR [V] Figure 3. Typical Junction Capacitance ©2004 Fairchild Semiconductor Corporation 100 IF = 8A 42 o Tc = 25 C 40 38 36 34 32 30 28 26 100 200 300 400 500 600 di/dt [A/µs] Figure 4. Typical Reverse Recovery Time vs. di/dt Rev. A, October 2004 FFPF60SA60DS Electrical Characteristics (per leg) (Continued) o TC = 25 C 4 2 1 200 300 400 500 C 3 0 100 10 Average Forward Current , IF(AV) [A] IF = 8A D Reverse Recovery Current , Irr [A] 6 5 FFPF60SA60DS Typical Characteristics 5 0 60 600 80 100 120 140 160 o Case Temperature , TC [ C] di/dt [A/µs] Figure 5. Typical Reverse Recovery Current vs. di/dt Figure 6. Forward Curent Derating Curve Test Circuits and Waveforms VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF L IF DUT RG CURRENT SENSE dIF trr dt ta tb 0 + VGE - MOSFET t1 VDD 0.25 IRM IRM t2 Figure 7. trr Test Circuit Figure 8. trr Waveforms and Definitions I = 1A L = 40mH R < 0.1Ω VDD = 50V EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L VAVL R CURRENT SENSE Q1 + VDD DUT IL t0 Figure 9. Avalanche Energy Test Circuit ©2004 Fairchild Semiconductor Corporation IL I V t1 t2 t Figure 10. Avalanche Current and Voltage Waveforms Rev. A, October 2004 FFPF60SA60DS Package Dimensions 3.30 ±0.10 TO-220F 10.16 ±0.20 2.54 ±0.20 ø3.18 ±0.10 (7.00) (1.00x45°) 15.87 ±0.20 15.80 ±0.20 6.68 ±0.20 (0.70) 0.80 ±0.10 ) 0° (3 9.75 ±0.30 MAX1.47 #1 +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.76 ±0.20 2.54TYP [2.54 ±0.20] 9.40 ±0.20 4.70 ±0.20 0.35 ±0.10 Dimensions in Millimeters ©2004 Fairchild Semiconductor Corporation Rev. A, October 2004 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ ActiveArray™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2004 Fairchild Semiconductor Corporation Rev. I13