BAS16HT1G BAS16HT1G Connection Diagram 2 2 A1 1 SOD-323 1 Small Signal Diode Absolute Maximum Ratings * TA = 25°C unless otherwise noted Symbol VRRM Parameter Maximum Repetitive Reverse Voltage Value 85 Units V IF(AV) Average Rectified Forward Current IFSM Non-repetitive Peak Forward Surge Current Pulse Width = 1.0 second 200 mA TSTG Storage Temperature Range 600 mA -65 to +150 TJ Operating Junction Temperature -55 to +150 °C °C * These ratings are limiting values above which the serviceability of the diode may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD Power Dissipation Parameter RθJA Thermal Resistance, Junction to Ambient Electrical Characteristics Value 200 Units mW 600 °C/W TA=25°C unless otherwise noted Symbol VR Parameter Breakdown Voltage Test Conditions IR = 5.0µA VF Forward Voltage IR Max. Units V IF = 1.0mA IF = 10mA IF = 50mA IF = 150mA 715 855 1.0 1.25 mV mV V V Reverse Leakage VR = 75V VR = 25V, TA = 150°C VR = 75V, TA = 150°C 1.0 30 50 µA µA µA CT Total Capacitance VR = 0, f = 1.0MHz 2.0 pF trr Reverse Recovery Time IF = IR = 10mA, IRR = 1.0mA, RL = 100Ω 6.0 ns ©2004 Fairchild Semiconductor Corporation Min. 85 BAS16HT1G, Rev. A BAS16HT1G Typical Characteristics 300 Ta= 25°C Reverse Current, IR [nA] Ta= 25°C 250 140 200 150 130 100 120 50 0 10 R Reverse Voltage, VR [v] 150 110 1 2 3 5 10 20 30 Reverse Current, IR [uA] 50 100 400 350 300 250 225 1 2 3 F 5 10 20 30 Forward Current, IF [uA] 50 725 Ta= 25°C 700 650 600 550 500 450 0.1 1.2 1 0.8 5 10 Figure 4. Forward Voltage vs Forward Current VF - 0.1 to 10mA Total Capacitance, C T [pF] Ta= 25°C 0.2 0.3 0.5 1 2 3 Forward Current, IF [mA] 1.3 Ta= 25 °C 1.2 1.1 F Forward Voltage, VF [V] 1.4 Figure 2. Reverse Current vs Reverse Voltage IR - 10 to 100V 100 Figure 3. Forward Voltage vs Forward Current VF - 1.0 to 100µA 1.5 100 GENERAL RULE: The Reverse Current of a diode will approximately double for every ten (10) Degree C increase in Temperature Forward Voltage, VF [mV] 485 Ta= 25°C 450 70 F F Forward Voltage, VF [mV] Figure 1. Reverse Voltage vs Reverse Current BV - 1.0 to 100µA 20 30 50 Reverse Voltage, VR [v] 0.6 10 1 20 30 50 100 200 300 Forward Current, IF [mA] 500 Figure 5. Forward Voltage vs Forward Current VF - 10 - 800mA ©2004 Fairchild Semiconductor Corporation 0 2 4 6 8 10 Reverse Voltage [V] 12 14 15 Figure 6. Total Capacitance BAS16HT1G, Rev. A Reverse Recovery Time, trr [ns] 4 (Continued) 500 IR 400 Ta= 25°C C u rre n t [m A ] 3.5 3 2.5 2 OR WA R 300 300 IF 200 200 100 1.5 -F 400 100 (A V - A D CU R RE NT ST EA D Y Io - A V E R A ST VERA G E AT GE R R E C E ECTIF T IF -m IE D IE D C A CU URR E NRTR E - mNAT ) mA D 1 10 BAS16HT1G Typical Characteristics 20 30 40 Reverse Current [mA] 50 0 0 60 0 50 0 50 100 100 150 150 o o A Ambient Temperature, TA [ C] IRR (Reverse Recovery Current) = 1.0 mA - Rloop = 100 Ohms Figure 7. Reverse Recovery Time vs Reverse Current TRR - IR 10mA vs 60mA Figure 8. Average Rectified Current (IF(AV)) vs Ambient Temperature (TA) Power Dissipation, PD [mW] 500 400 DO-35 Pkg 300 SOT-23 Pkg 200 SOD-323 Pkg 100 0 0 50 100 150 200 o Average Temperature, Io [ C] Figure 9. Power Derating Curve ©2004 Fairchild Semiconductor Corporation BAS16HT1G, Rev. A BAS16HT1G Package Dimension SOD-323 Dimensions in Millimeters ©2004 Fairchild Semiconductor Corporation BAS16HT1G, Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2004 Fairchild Semiconductor Corporation Rev. I11