FDP6670S/FDB6670S 30V N-Channel PowerTrench SyncFET ™ General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDP6670S includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDP6670S/FDB6670S as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDP6670A/FDB6670A in parallel with a Schottky diode. • 31 A, 30 V. RDS(ON) = 8.5 mΩ @ VGS = 10 V RDS(ON) = 12.5 mΩ @ VGS = 4.5 V • Includes SyncFET Schottky body diode • Low gate charge (23nC typical) • High performance trench technology for extremely low RDS(ON) and fast switching • High power and current handling capability D D G G D TO-220 S G S TO-263AB FDP Series Absolute Maximum Ratings Symbol FDB Series T A =25 oC unless otherwise noted Parameter VDSS Drain-Source Voltage VGSS ID Gate-Source Voltage Drain Current – Continuous – Pulsed Ratings Units 30 V ±20 V A (Note 1) 62 (Note 1) 150 PD Total Power Dissipation @ TC = 25°C TJ, TSTG Operating and Storage Junction Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Derate above 25°C TL S 62.5 W 0.5 W/°C –55 to +150 °C 275 °C Thermal Characteristics RθJC Thermal Resistance, Junction-to-Case RθJA Thermal Resistance, Junction-to-Ambient 2.1 °C/W 62.5 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDB6670S FDB6670S 13’’ 24mm 800 units FDP6670S FDP6670S Tube n/a 45 2001 Fairchild Semiconductor Corporation FDP6670S/FDB6670S Rev E(W) FDP6670S/FDB6670S September 2001 Symbol T A = 25°C unless otherwise noted Parameter Drain-Source Avalanche Ratings Test Conditions Min Typ Max Units (Note 1) W DSS Single Pulse Drain-Source Avalanche Energy IAR Maximum Drain-Source Avalanche Current VDD = 25 V, ID = 16.5 A 285 mJ 16.5 A Off Characteristics BVDSS Drain–Source Breakdown Voltage ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSSF IGSSR VGS = 0 V, ID = 1mA ID = 26mA, Referenced to 25°C VDS = 24 V, VGS = 0 V Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V Gate–Body Leakage, Reverse VGS = –20 V, VDS = 0 V On Characteristics 30 V 24 mV/°C 500 µA 100 nA –100 nA 3 V (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID = 26mA, Referenced to 25°C ID = 1mA 1 –4.5 2.2 VGS = 10 V, ID = 31 A VGS = 4.5 V, ID = 26.5 A VGS=10 V, ID =31 A, TJ=125°C 5 8 10 ID(on) On–State Drain Current VGS = 10 V, VDS = 10 V gFS Forward Transconductance VDS = 10 V, ID = 31 A 69 S VDS = 15 V, f = 1.0 MHz V GS = 0 V, 2639 pF 737 pF 222 pF mV/°C 8.5 12.5 19 60 mΩ A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) (Note 2) 13 24 ns 10 21 ns Turn–Off Delay Time 39 62 ns tf Turn–Off Fall Time 35 56 ns Qg Total Gate Charge 23 32 nC Qgs Gate–Source Charge Qgd Gate–Drain Charge VDS = 15 V, VGS = 10 V, VDS = 15 V, VGS = 5 V ID = 1 A, RGEN = 6 Ω ID = 31 A, 9 nC 8 nC Drain–Source Diode Characteristics VSD trr Qrr Drain–Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IS = 3.5 A VGS = 0 V, IS = 7 A IF = 3.5 A, diF/dt = 300 A/µs (Note 1) (Note 1) (Note 2) 0.39 0.48 32 56 0.7 0.9 V nS nC Notes: 1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 2. See “SyncFET Schottky body diode characteristics” below. FDP6670S/FDB6670S Rev E (W) FDP6670S/FDB6670S Electrical Characteristics FDP6670S/FDB6670S Typical Characteristics 150 2.2 VGS = 10V R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 6.0V 5.0V I D, DRAIN CURRENT (A) 120 4.5V 90 4.0V 60 30 3.5V 0 2 VGS = 4.0V 1.8 1.6 5.0V 6.0V 1.2 7.0V 8.0V 10V 1 0.8 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) 5 0 Figure 1. On-Region Characteristics. 30 60 90 I D, DRAIN CURRENT (A) 120 150 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.027 1.6 R DS(ON), ON-RESISTANCE (OHM) ID = 31A VGS = 10V R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 4.5V 1.4 1.4 1.2 1 ID = 15.5A 0.022 0.017 o TA = 125 C 0.012 o TA = 25 C 0.007 0.8 0.002 2 4 -50 -25 0 25 50 75 100 8 10 125 Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 80 TA = -55 C o 25 C 60 o 125 C 40 20 I S, REVERSE DRAIN CURRENT (A) 10 o VDS = 5V ID , DRAIN CURRENT (A) 6 VGS, GATE TO SOURCE VOLTAGE (V) 0.6 VGS = 0V o TA = 125 C 1 o 25 C o -55 C 0.1 0.01 0 2 2.5 3 3.5 4 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 4.5 0 0.1 0.2 0.3 0.4 0.5 0.6 VSD , BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDP6670S/FDB6670S Rev E (W) (continued) 10 3600 VDS = 10V ID = 31A f = 1MHz VGS = 0 V 15V 3000 8 CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) FDP6670S/FDB6670S Typical Characteristics 20V 6 4 2 C ISS 2400 1800 1200 COSS 600 CRSS 0 0 0 10 20 30 40 0 50 5 Figure 7. Gate Charge Characteristics. P(pk), PEAK TRANSIENT POWER (W) I D, DRAIN CURRENT (A) 10us 100µs R DS(ON) LIMIT 1ms 10ms 10 100ms DC VGS = 10V SINGLE PULSE o R θJC = 2.1 C/W o TA = 25 C 1 0.1 20 25 30 1 10 VDS , DRAIN-SOURCE VOLTAGE (V) 100 1000 SINGLE PULSE RθJC = 2.1°C/W T A = 25°C 800 600 400 200 0 0.0001 Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 15 Figure 8. Capacitance Characteristics. 1000 100 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 0.001 0.01 t1 , TIME (sec) 0.1 1 Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 R θ J C(t) = r(t) * Rθ J C R θJ C = 2.1 °C/W 0.2 0.1 0.1 P(pk t1 t2 T J - Tc = P * RθJ C(t) Duty Cycle, D = t1 / t2 0.05 0.02 0.01 0.01 0.00001 SINGLE PULSE 0.0001 0.001 0.01 0.1 1 t 1, TIME (sec) Figure 11. Transient Thermal Response Curve. FDP6670S/FDB6670S Rev E (W) (continued) SyncFET Schottky Body Diode Characteristics TIME: 12.5ns/div Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. Figure 14. SyncFET diode reverse leakage versus drain-source voltage and temperature. IDSS, REVERSE LEAKAGE CURRENT (A) CURRENT: 0.8A/div Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 FDP6670S. 0.01 o TA = 100 C 0.001 0.0001 o TA = 25 C 0.00001 Figure 12. FDP6670S SyncFET body diode reverse recovery characteristic. 0 10 20 30 VDS, REVERSE VOLTAGE (V) CURRENT: 0.8A/div For comparison purposes, Figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDP6670A). TIME: 12.5ns/div Figure 13. Non-SyncFET (FDP6670A) body diode reverse recovery characteristic. FDP6670S/FDB6670S Rev E (W) FDP6670S/FDB6670S Typical Characteristics TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4