tm FDS6670AS 30V N-Channel PowerTrench® SyncFET™ General Description Features The FDS6670AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6670AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. • 13.5 A, 30 V. RDS(ON) max= 9.0 mΩ @ VGS = 10 V RDS(ON) max= 11.5 mΩ @ VGS = 4.5 V • Includes SyncFET Schottky body diode • Low gate charge (27nC typical) • High performance trench technology for extremely low RDS(ON) and fast switching Applications • DC/DC converter • High power and current handling capability • Low side notebook • RoHS Compliant D D D D SO-8 S S S G Absolute Maximum Ratings Symbol 5 4 6 3 7 2 8 1 TA=25oC unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter 30 V VGSS Gate-Source Voltage ±20 V ID Drain Current (Note 1a) 13.5 A PD Power Dissipation for Single Operation (Note 1a) 2.5 (Note 1b) 1.2 – Continuous – Pulsed 50 (Note 1c) TJ, TSTG W 1 –55 to +150 °C (Note 1a) 50 °C/W (Note 1) 25 °C/W Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6670AS FDS6670AS 13’’ 12mm 2500 units ©2008 Fairchild Semiconductor Corporation FDS6670AS Rev A2 (X) FDS6670AS 30V N-Channel PowerTrench® SyncFET™ May 2008 Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient VGS = 0 V, ID = 1 mA Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 500 µA Gate–Body Leakage VGS = ±20 V, VDS = 0 V ±100 nA 3 V On Characteristics 30 V 27 ID = 10 mA, Referenced to 25°C mV/°C (Note 2) VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance VDS = VGS, ID = 1 mA ID(on) On–State Drain Current VGS = 10 V, VDS = 5 V gFS Forward Transconductance VDS = 10 V, ID = 13.5 A VDS = 15 V, f = 1.0 MHz V GS = 0 V, 1 1.7 ID = 10 mA, Referenced to 25°C –4 VGS = 10 V, ID = 13.5 A ID = 11.2 A VGS = 4.5 V, VGS=10 V, ID =13.5A, TJ=125°C 7.5 9 10 mV/°C 9 11.5 12.5 50 mΩ A 66 S 1540 pF 440 pF 160 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Gate Resistance Switching Characteristics td(on) VGS = 15 mV, f = 1.0 MHz (Note 2) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time 2.1 VDS = 15 V, VGS = 10 V, VDS = 15 V, VGS = 4.5 V, ID = 1 A, RGEN = 6 Ω ID = 1 A, RGEN = 6 Ω 10 20 ns ns 5 10 27 44 ns 18 32 ns 13 23 ns 15 27 ns 24 38 ns 13 23 ns Qg(TOT) Total Gate Charge at Vgs=10V Qg Total Gate Charge at Vgs=5V Qgs Gate–Source Charge 4.2 nC Qgd Gate–Drain Charge 5.1 nC VDD = 15 V, ID = 13.5 A, 27 38 nC 16 22 nC FDS6670AS Rev A2 (X) FDS6670AS 30V N-Channel PowerTrench® SyncFET™ Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Drain–Source Diode Characteristics and Maximum Ratings VSD trr Drain–Source Diode Forward Voltage Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge Notes: 1. VGS = 0 V, IS = 3.5 A VGS = 0 V, IS = 7 A IF = 13.5A, diF/dt = 300 A/µs (Note 2) 0.5 0.6 20 (Note 3) 15 (Note 2) 0.7 V nS nC RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50°C/W when mounted on a 1 in2 pad of 2 oz copper b) 105°C/W when mounted on a .04 in2 pad of 2 oz copper c) 125°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. See “SyncFET Schottky body diode characteristics” below. FDS6670AS Rev A2 (X) FDS6670AS 30V N-Channel PowerTrench® SyncFET™ Electrical Characteristics 50 2.6 VGS = 10V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 3.5V ID, DRAIN CURRENT (A) 4.0V 40 4.5V 6.0V 3.0V 30 20 10 2.5V 2.2 VGS = 3.0V 1.8 3.5V 1.4 4.5V 10V 0.6 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) 0 2 10 20 30 40 50 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.4 0.025 ID = 13.5A VGS = 10V RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 6.0V 1 0 1.2 1 0.8 0.6 ID = 6.75A 0.02 0.015 o TA = 125 C 0.01 o TA = 25 C 0.005 -50 -25 0 25 50 75 o TJ, JUNCTION TEMPERATURE ( C) 100 125 2 Figure 3. On-Resistance Variation with Temperature. 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 50 VGS = 0V IS, REVERSE DRAIN CURRENT (A) VDS = 5V 40 ID, DRAIN CURRENT (A) 4.0V 30 20 TA = 125oC o -55 C 10 25oC 0 1 TA = 125oC o 25 C 0.1 o -55 C 0.01 0.001 1 1.5 2 2.5 3 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 3.5 0 0.1 0.2 0.3 0.4 0.5 VSD, BODY DIODE FORWARD VOLTAGE (V) 0.6 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS6670AS Rev A2 (X) FDS6670AS 30V N-Channel PowerTrench® SyncFET™ Typical Characteristics 2400 ID =13.5A f = 1MHz VGS = 0 V VDS = 10V 20V 8 CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 15V 6 4 1800 Ciss 1200 Coss 600 2 Crss 0 0 0 5 10 15 20 Qg, GATE CHARGE (nC) 25 0 30 Figure 7. Gate Charge Characteristics. 30 50 P(pk), PEAK TRANSIENT POWER (W) RDS(ON) LIMIT ID, DRAIN CURRENT (A) 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 8. Capacitance Characteristics. 100 100µs 1ms 10ms 10 100ms 1s 10s DC 1 VGS = 10V SINGLE PULSE RθJA = 125oC/W 0.1 o TA = 25 C 0.01 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 SINGLE PULSE RθJA = 125°C/W TA = 25°C 40 30 20 10 0 0.001 Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 5 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) * RθJA RθJA = 125 °C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 t1 0.01 t2 0.01 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS6670AS Rev A2(X) FDS6670AS 30V N-Channel PowerTrench® SyncFET™ Typical Characteristics (continued) SyncFET Schottky Body Diode Characteristics Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. 0.1 CURRENT : 0.4A/div IDSS, REVERSE LEAKAGE CURRENT (A) Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 shows the reverse recovery characteristic of the FDS6670AS. 0.01 125oC 0.001 100oC 0.0001 25oC 0.00001 0 10 20 VDS, REVERSE VOLTAGE (V) 30 Figure 14. SyncFET body diode reverse leakage versus drain-source voltage and temperature. TIME : 12.5ns/div Figure 12. FDS6670AS SyncFET body diode reverse recovery characteristic. CURRENT : 0.4A/div For comparison purposes, Figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDS6670A). TIME : 12.5ns/div Figure 13. Non-SyncFET (FDS6670A) body diode reverse recovery characteristic. FDS6670AS Rev A2 (X) FDS6670AS 30V N-Channel PowerTrench® SyncFET™ Typical Characteristics (continued) TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. 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Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I34 FDS6670AS Rev A2 (X)