RH111 Voltage Comparator U W W W U DESCRIPTIO ABSOLUTE The RH111 is a general purpose voltage comparator. The RH111 offers maximum input offset voltage of 3mV and input offset current of 10nA with a typical response time of 200ns. The RH111 can operate from a single 5V supply to ±15V supplies and can drive up to 50mA loads referred to ground or either supply. A separate output Ground pin allows output signals to be isolated from analog ground. Supply Voltage (Pin 8 to Pin 4)................................ 36V Output to Negative Supply (Pin 7 to Pin 4) .............. 35V Ground to Negative Supply (Pin 1 to Pin 4) ............. 30V Differential Input Voltage ......................................... 35V Voltage at Strobe Pin (Pin 6 to Pin 8) ........................ 5V Input Voltage (Note 1) ........................................... ±15V Output Short-Circuit Duration ............................. 10 sec Operating Temperature Range (Note 2) ................................ – 55°C to 125°C Storage Temperature Range ................. – 65°C to 150°C Lead Temperature (Soldering, 10 sec).................. 300°C The wafer lots are processed to the requirements of MIL-STD-883 Class S to yield circuits usable in precision space applications. AXI U RATI GS , LTC and LT are registered trademarks of Linear Technology Corporation. U U BUR -I CIRCUIT 15V 18V 1.3k 50k 2 100k 8 + 50k OR 5 7 200Ω 50k 2V 3 7 2 3 – 1 + 1 4 4 –18V 8 – 604Ω RH111 BI01 –15V RH111 BI02 U W U PACKAGE/ORDER I FOR ATIO TOP VIEW TOP VIEW V+ TOP VIEW 8 7 OUT GND 1 +IN 2 –IN 3 + – 4 V– 6 BALANCE/ STROBE 5 BALANCE H PACKAGE 8-LEAD TO-5 METAL CAN GND 1 8 V+ +IN 2 7 –IN 3 6 OUT BALANCE/ STROBE V– 4 5 BALANCE V+ GND 1 10 +IN 2 9 OUTPUT –IN 3 8 NC NC 4 7 BAL/STROBE V –– 5 6 BAL J8 PACKAGE 8-LEAD CERDIP W PACKAGE 10-LEAD CERPAC Note: For ordering information contact LTC. 1 RH111 TABLE 1: ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VOS Input Offset Voltage RS ≤ 50k IOS Input Offset Current IB Input Bias Current AVOL Large-Signal Voltage Gain Input Voltage Range tD Response Time VOL Output Saturation Voltage NOTES (Preirradiation) (Note 8) MIN TA = 25°C TYP MAX 3,4 3.0 1 4.0 2,3 mV 3,4 10 1 20 2,3 nA 3 100 1 150 2,3 nA 13.0 1 13.0 2,3 7 VS = ±15V, VPIN7 ≤ 5V 40 4 – 14.5 5 V/mV – 14.5 V 200 ns 1.5 1 VIN ≤ 6mV, IOUT ≤ 8mA 0.4 1 0.4 2,3 V VIN = 5V, ISTROBE = 3mA, VOUT = 20V 10 1 500 2,3 nA Positive Supply Current 6.0 1 mA Negative Supply Current 5.0 1 mA Strobe Current Minimum to Ensure Output Transistor Is Turned Off 6 Input Capacitance TABLE 1A: ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VOS Input Offset Voltage RS ≤ 50k IOS Input Offset Current IB Input Bias Current AVOL Large-Signal Voltage Gain NOTES VS = ±15V, VPIN7 ≤ 5V Output Saturation Voltage pF (Postirradiation) (Note 9) 20KRAD(Si) MIN MAX 50KRAD(Si) MIN MAX 100KRAD(Si) 200KRAD(Si) MIN MAX MIN MAX UNITS 3.0 3.0 3.0 3.0 4.0 mV 10 10 10 25 50 nA 40 150 40 200 40 300 40 400 25 nA V/mV 13.0 –14.5 13.0 –14.5 13.0 – 14.5 13.0 V VIN = 5mV, IOUT = 50mA V + ≥ 4.5V, V – = 0V 1.5 1.5 1.5 1.5 1.5 V VIN ≤ 6mV, IOUT ≤ 8mA 0.4 0.4 0.4 0.4 0.4 V VIN ≥ 5mV, ISTROBE = 3mA VOUT = 20V 10 10 100 100 100 nA 6.0 6.0 6.0 6.0 6.0 mA Negative Supply Current Input Capacitance 6 13.0 –14.5 Positive Supply Current Strobe Current mA 10KRAD(Si) MIN MAX –14.5 V 3 100 7 Input Voltage Range Output Leakage Current 2 UNITS VIN = 5mV, IOUT = 50mA, V + ≥ 4.5V, V – = 0V Output Leakage Current VOL SUB- – 55°C ≤ TA ≤ 125°C SUBGROUP MIN TYP MAX GROUP 5.0 Minimum to Ensure Output Transistor Is Turned Off 6 5.0 5.0 5.0 mA 3 (Typ) 3(Typ) 5.0 3(Typ) 3(Typ) 3(Typ) mA 6 (Typ) 6(Typ) 6(Typ) 6(Typ) 6(Typ) pF RH111 Note 1: Applicable for ±15V supplies. The positive input voltage limit is 30V above the negative supply. The negative input voltage limit is the negative supply. Note 2: TJMAX = 150°C Note 3: Offset voltage, offset current and bias current specifications apply for any supply voltage from a single 5V up to ±15V supplies. Note 4: Offset voltage and offset currents shown are the maximum values required to drive the output within a volt of either supply with a 1mA load. These parameters define an error band and take into account the worstcase effects of voltage gain and input impedance. Note 5: Response time is specified for a 100mV input step with 5mV overdrive with the collector output terminated with a 500Ω pull-up resistor tied to 5V. Note 6: Do not short the Strobe pin to ground. It should be current driven at 3mA to 5mA for the shortest strobe time. Currents as low as 500µA will strobe the RH111 if speed is not important. External leakage on the Strobe pin in excess of 0.2µA when the strobe is “off ” can cause offset voltage shifts. Note 7: RL = 1k, – 10V ≤ VOUT ≤ 14.5V Note 8: VS = ±15V, unless otherwise noted. Note 9: VS = ±15V, VCM = 0V, TA = 25°C, unless otherwise noted. TOTAL DOSE BIAS CIRCUIT 12V 47k 12Ω 5.1k – + 12Ω –12V RH111 TA01 U W TABLE 2: ELECTRICAL TEST REQUIRE E TS MIL-STD-883 TEST REQUIREMENTS SUBGROUP Final Electrical Test Requirements (Method 5004) 1*,2,3,4 Group A Test Requirements (Method 5005) 1,2,3,4 Group C and D End Point Electrical Parameters (Method 5005) * PDA Applies to subgroup 1. See PDA Test Notes. 1 PDA Test Notes The PDA is specified as 5% based on failures from group A, subgroup 1, tests after cooldown as the final electrical test in accordance with method 5004 of MIL-STD-883 Class B. The verified failures of group A, subgroup 1, after burn-in divided by the total number of devices submitted for burnin in that lot shall be used to determine the percent for the lot. Linear Technology Corporation reserves the right to test to tighter limits than those given. Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights. 3 RH111 U W TYPICAL PERFORMANCE CHARACTERISTICS Voltage Gain Input Bias Current 350 6 600 300 500 250 4 2 0 –2 BIAS CURRENT (nA) 700 VOLTAGE GAIN (V/mV) INPUT OFFSET VOLTAGE (mV) Input Offset Voltage 8 400 300 200 1 10 100 TOTAL DOSE KRAD (Si) 10 100 TOTAL DOSE KRAD (Si) 1 1000 1000 10 100 TOTAL DOSE KRAD (Si) 1 Common Mode Rejection Ratio 1000 RH111 G03 RH111 G02 RH111 G01 Input Offset Current 130 30 120 20 INPUT OFFSET CURRENT (nA) COMMON MODE REJECTION RATIO (dB) 100 0 0 –6 150 50 100 –4 200 110 100 90 80 70 10 0 –10 –20 –30 60 –40 1 10 100 TOTAL DOSE KRAD (Si) 1000 RH111 G04 1 10 100 TOTAL DOSE KRAD (Si) 1000 RH111 G05 I.D. No. 66-11-0111 Rev. B 4 Linear Technology Corporation 1630 McCarthy Blvd., Milpitas, CA 95035-7417 (408) 432-1900 FAX: (408) 434-0507● TELEX: 499-3977 ● www.linear-tech.com LT/HP 0897 500 REV B • PRINTED IN USA ● LINEAR TECHNOLOGY CORPORATION 1989