RH119 High Performance Dual Comparator W W U W U DESCRIPTION ABSOLUTE MAXIMUM RATINGS The RH119 dual comparator features low input offset voltage and offset current, high voltage gain, guaranteed common mode rejection and input protection diodes. Supply Voltage ........................................................ 36V Output to Negative Supply Voltage ......................... 36V Ground to Negative Supply Voltage ........................ 25V Ground to Positive Supply Voltage ......................... 18V Diffierential Input Voltage ....................................... ± 5V Differential Input Current ...................................... ± 5mA Input Voltage (See Note 1) Output Short-Circuit Duration ............................. 10 sec Operating Temperature Range .............. – 55°C to 125°C Storage Temperature Range ................. – 65°C to 150°C Lead Temperature (Soldering, 10 sec).................. 300°C The RH119 is capable of operation over a supply range from 5V to ±15V and can drive 25mV leads from each open collector output. A separate GND pin allows the RH119 to isolate system grounds. The wafer lots are processed to Linear Technology’s inhouse Class S flow to yield circuits usable in stringent military applications. , LTC and LT are registered trademarks of Linear Technology Corporation. U U BUR -I CIRCUIT 18V TO 20V V+ – 10k 10k OUT1 SIDE 1 + GND1 100Ω – OUT2 SIDE 2 10k + GND2 V– RH119 BI –18V TO –20V W PACKAGE I FOR ATIO U U TOP VIEW OUT1 1 TOP VIEW TOP VIEW V+ NC 1 14 NC 10 NC 2 13 NC GND1 3 12 OUT1 9 –IN2 GND1 2 8 +IN2 +IN1 3 7 GND2 –IN1 4 5 6 OUT2 V– H PACKAGE 10-LEAD TO-5 METAL CAN V+ +IN1 4 –IN1 5 10 –IN2 V– 6 9 +IN2 OUT2 7 8 GND2 11 V+ OUT1 1 10 GND1 2 9 –IN2 +IN1 3 8 +IN2 –IN1 4 7 GND2 V– 5 6 OUT2 W PACKAGE 10-LEAD CERPAC J PACKAGE 14-LEAD CERDIP 1 RH119 TABLE 1: ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VOS VS = ± 15V, VCM = 0V Input Offset Voltage NOTES (Preirradiation) (Note 2) MIN SUB- – 55°C T AJ 125°C SUBGROUP MIN TYP MAX GROUP TJ = 25°C TYP MAX 4 1 3 CMRR Common Mode Rejection Ratio IOS Input Offset Current IB Input Bias Current AV Voltage Gain tR Response Time VSAT Saturation Voltage 7 90 – 5mV, IO = 25mA V – = 0V VIN 80 4.5V, – 6mV, ISINK 3.2mA TA 0°C TA 0°C Output Leakage Current VIN 5mV, V OUT = 35V Input Voltage Range VS = ± 15V V + = 5V, V – = 0V – 12 1 Differential Input Voltage IS 1 100 2,3 nA 500 1 1000 2,3 nA 4 4 V+ dB 75 10 VIN mV mV 2,3 1 3 UNITS V/mV 200 4 200 5,6 ns 1.5 1 0.4 1 0.4 0.6 2 3 V V 2 1 10 2,3 µA 12 3 1 1 12 3 2,3 2,3 V V ±5 1 ±5 2.3 V V – 12 1 Supply Current V + = 5V, V – = 0V Positive Supply Current VS = ± 15V 11.5 1 mA Negative Supply Current VS = ±1 5V 4.5 1 mA 4.3 TABLE 1A: ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER VOS Offset Voltage IOS Input Offset Current IB Input Bias Current AVOL Large-Signal Voltage Gain VSAT Saturation Voltage CONDITIONS mA (Postirradiation) (Note 5) 10Krad(Si) 20Krad(Si) NOTES MIN MAX MIN MAX 50Krad(Si) 100Krad(Si) 200Krad(Si) MIN MAX MIN MAX MIN MAX UNITS 4 4 4 4 8 mV 3 75 100 150 300 500 nA 3 500 750 1000 1500 2000 nA 10 10 10 10 5 V/mV VIN – 5mV, IO = 25mA 1.5 1.5 1.5 1.5 1.5 V V+ V – = 0V 0.4 0.4 0.4 0.4 0.4 V 4.5V, VIN –6mV, ISINK 3.2mA CMRR Common Mode Rejection Ratio IS Positive Supply Current VS = ±15V 11.5 11.5 11.5 11.5 11.5 mA Negative Supply Current VS = ±15V 4.5 4.5 4.5 4.5 4.5 mA Output Leakage Current VIN 5mV, V OUT 35V 2 2 2 2 2 µA 2 90 90 90 90 90 dB RH119 ELECTRICAL CHARACTERISTICS (Continued) Note 1: For supply voltages less than ± 15V, the maximum input voltage is equal to the supply voltage. Note 2: Unless otherwise noted, supply voltage equals ± 15V and TA = 25°C. The GND pin is grounded. Note that the maximum voltage allowed between the GND pin and V + is 18V. Do not tie the GND pin to V – when the power supply voltage exceeds ± 9V. The offset voltage, offset current and bias current specifications apply for all supply voltages between ± 15V and 5V unless otherwise specified. Note 3: The offset voltages and currents given are the maximum values required to drive the output within 1V of either supply with a 1mA load–– thus, these parameters define an error band and take into account the worst-case effects of voltage gain and input impedance. Note 4: Response time specified for a 100mV input step with 5mV overdrive. Note 5: VS = ± 15V, VCM = 0V, TA = 25°C unless otherwise noted. U W TABLE 2: ELECTRICAL TEST REQUIRE E TS MIL-STD-883 TEST REQUIREMENTS PDA Test Notes The PDA is specified as 5% based on failures from group A, subgroup 1, tests after cooldown as the final electrical test in accordance with method 5004 of MIL-STD-883 Class B. The verified failures (including Delta parameters) of group A, subgroup 1, after burn-in divided by the total number of devices submitted for burn-in in that lot shall be used to determine the percent for the lot. Linear Technology Corporation reserves the right to test to tighter limits than those given. SUBGROUP Final Electrical Test Requirements (Method 5004) 1*,2,3,4 Group A Test Requirements (Method 5005) 1,2,3,4 Group C and D End Point Electrical Parameters (Method 5005) 1 * PDA Applies to subgroup 1. See PDA Test Notes. TOTAL DOSE BIAS CIRCUIT 15V 10k – V+ 10k SIDE 1 + 10k OUT1 GND1 100Ω – SIDE 2 + 10k OUT2 GND2 V– –15V RH119 TDBC Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights. 3 RH119 U W TYPICAL PERFORMANCE CHARACTERISTICS Input Offset Voltage 2 0 –2 INPUT OFFSET CURRENT (nA) INPUT BIAS CURRENT (nA) INPUT OFFSET VOLTAGE (mV) 500 V S = ±15V VCM = 0V V S = ±15V VCM = 0V RS = 5k 4 1600 1200 –4 –6 800 400 0 1 10 100 TOTAL DOSE KRAD (Si) 1 1000 10 100 TOTAL DOSE KRAD (Si) 100 0 50 40 30 20 1000 1 10 100 TOTAL DOSE KRAD (Si) Input Offset Voltage 6 V S = ±15V RS = 50Ω V S = ±15V 140 130 120 110 100 90 RH119 G04 1000 RH119 G03 INPUT OFFSET VOLTAGE (mV) COMMON MODE REJECTION RATIO (dB) V S = ±15V 60 10 100 TOTAL DOSE KRAD (Si) 200 –100 150 1 300 Common Mode Rejection Ratio Open-Loop Gain 70 OPEN-LOOP GAIN (V/mV) 1000 V S = ±15V VCM = 0V 400 RH119 G02 RH119 G01 10 Input Offset Current Input Bias Current 2000 6 1 10 100 TOTAL DOSE KRAD (Si) 1000 RH119 G05 4 2 0 –2 –4 –6 1 10 100 TOTAL DOSE KRAD (Si) 1000 RH119 G06 I.D. No. 66-10-0176 Rev. A 0896 4 Linear Technology Corporation LT/HP 0896 REV A 500 • PRINTED IN USA 1630 McCarthy Blvd., Milpitas, CA 95035-7417 (408) 432-1900 ● FAX: (408) 434-0507 ● TELEX: 499-3977 LINEAR TECHNOLOGY CORPORATION 1990