PHILIPS PSMN165-200K

PSMN165-200K
N-channel enhancement mode field-effect transistor
Rev. 01 — 16 January 2001
Product specification
1. Description
SiliconMAX™1 products use the latest Philips TrenchMOS™2 technology to achieve
the lowest possible on-state resistance in a SOT96-1 (SO8) package.
Product availability:
PSMN165-200K in SOT96-1 (SO8).
2. Features
■ Very low on-state resistance
■ Fast switching
■ TrenchMOS™ technology.
3. Applications
■ DC to DC convertor
■ Computer motherboards
■ Switch mode power supplies.
c
c
4. Pinning information
Table 1:
Pinning - SOT96-1, simplified outline and symbol
Pin
Description
1,2,3
source (s)
4
gate (g)
5,6,7,8
drain (d)
Simplified outline
8
5
1
4
MBK187
SOT96-1 (SO8)
SiliconMAX is a trademark of Royal Philips Electronics.
TrenchMOS is a trademark of Royal Philips Electronics.
d
g
Top view
1.
2.
Symbol
MBB076
s
PSMN165-200K
Philips Semiconductors
N-channel enhancement mode field-effect transistor
5. Quick reference data
Table 2:
Quick reference data
Symbol Parameter
VDS
drain-source voltage (DC)
Conditions
Typ
Max
Unit
Tj = 25 to 150 °C
−
200
V
ID
drain current (DC)
Tsp = 80 °C
−
2.9
A
Ptot
total power dissipation
Tsp = 80 °C
−
3.5
W
Tj
junction temperature
−
150
°C
RDSon
drain-source on-state resistance
130
165
mΩ
Min
Max
Unit
VGS = 10 V; ID = 2.5 A; Tj = 25 °C
6. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
−
200
V
−
±20
V
Tsp = 80 °C; Figure 2 and 3
−
2.9
A
peak drain current
Tsp = 25 °C; pulsed; tp ≤ 10 µs
−
20
A
Tsp = 80 °C; Figure 1
VDS
drain-source voltage (DC)
VGS
gate-source voltage (DC)
ID
drain current (DC)
IDM
Tj = 25 to 150 °C
Ptot
total power dissipation
−
3.5
W
Tstg
storage temperature
−55
+150
°C
Tj
operating junction temperature
−55
+150
°C
Source-drain diode
IS
source (diode forward) current (DC) Tsp = 80 °C
−
3.1
A
ISM
peak source (diode forward) current Tsp = 25 °C; pulsed; tp ≤ 10 µs
−
20
A
© Philips Electronics N.V. 2001. All rights reserved.
9397 750 07896
Product specification
Rev. 01 — 16 January 2001
2 of 13
PSMN165-200K
Philips Semiconductors
N-channel enhancement mode field-effect transistor
03aa25
03aa17
120
120
Pder
(%)
100
Ider
(%)
100
80
80
60
60
40
40
20
20
0
0
0
25
50
75
100
125
Tsp
150
(oC)
0
175
25
50
75
100
125
150 175
Tsp (oC)
VGS ≥ 5 V
P tot
P der = ---------------------- × 100%
P
°
ID
I der = ------------------- × 100%
I
°
tot ( 25 C )
D ( 25 C )
Fig 1. Normalized total power dissipation as a
function of solder point temperature.
Fig 2. Normalized continuous drain current as a
function of solder point temperature.
03ae06
102
ID
(A)
RDSon = VDS/ ID
10
tp = 10 µs
100 µs
1 ms
1
10 ms
δ=
P
tp
T
D.C.
100 ms
10-1
t
tp
T
10-2
1
10
102
VDS (V)
103
Tsp = 25 °C; IDM is single pulse
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
© Philips Electronics N.V. 2001. All rights reserved.
9397 750 07896
Product specification
Rev. 01 — 16 January 2001
3 of 13
PSMN165-200K
Philips Semiconductors
N-channel enhancement mode field-effect transistor
7. Thermal characteristics
Table 4:
Thermal characteristics
Symbol Parameter
Rth(j-sp)
thermal resistance from junction to solder
point
Conditions
Value Unit
mounted on a metal clad substrate; Figure 4
20
K/W
7.1 Transient thermal impedance
03ae05
102
Zth(j-sp)
(K/W)
10
δ = 0.5
0.2
0.1
1
0.05
0.02
δ=
P
tp
T
10-1
t
tp
single pulse
T
10-2
10-4
10-3
10-2
10-1
1
10
tp (s)
102
Tsp = 25 °C
Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration.
© Philips Electronics N.V. 2001. All rights reserved.
9397 750 07896
Product specification
Rev. 01 — 16 January 2001
4 of 13
PSMN165-200K
Philips Semiconductors
N-channel enhancement mode field-effect transistor
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Min
Typ
Max
Unit
ID = 250 µA; VGS = 0 V; Tj = 25 °C
200
240
−
V
Tj = 25 °C
2
−
4
V
Tj = 150 °C
1.2
−
−
V
Static characteristics
V(BR)DSS drain-source breakdown voltage
VGS(th)
gate-source threshold voltage
ID = 1 mA; VDS = VGS; Figure 9
Tj = −55 °C
IDSS
drain-source leakage current
−
−
6
V
VDS = 160 V; VGS = 0 V; Tj = 25 °C
−
−
1
µA
VDS = 200 V; VGS = 0 V; Tj = 150 °C
−
−
0.5
mA
−
−
100
nA
Tj = 25 °C
−
130
165
mΩ
Tj = 150 °C
−
325
413
mΩ
IGSS
gate-source leakage current
VGS = ±20 V; VDS = 0 V
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 2.5 A; Figure 7 and 8
Dynamic characteristics
gfs
forward transconductance
VDS = 15 V; ID = 2.9 A; Figure 11
−
10
−
S
Qg(tot)
total gate charge
ID = 3 A; VDD = 100 V; VGS = 10 V; Figure 14
−
40
−
nC
Qgs
gate-source charge
−
4.5
−
nC
Qgd
gate-drain (Miller) charge
−
12
16.5
nC
Ciss
input capacitance
−
1330 −
pF
Coss
output capacitance
−
140
−
pF
Crss
reverse transfer capacitance
−
70
−
pF
td(on)
turn-on delay time
−
12
25
ns
VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 12
VDD = 100 V; RD = 100 Ω;
VGS = 10 V; RG = 6 Ω
tr
rise time
−
11
25
ns
td(off)
turn-off delay time
−
50
80
ns
tf
fall time
−
25
40
ns
Source-drain (reverse) diode
VSD
source-drain (diode forward) voltage IS = 2.3 A; VGS = 0 V; Figure 13
trr
reverse recovery time
Qr
recovery charge
IS = 2.9 A; dIS/dt = −100 A/µs; VGS = 0 V
0.7
1.1
V
105
−
ns
−
0.45
−
µC
© Philips Electronics N.V. 2001. All rights reserved.
9397 750 07896
Product specification
−
−
Rev. 01 — 16 January 2001
5 of 13
PSMN165-200K
Philips Semiconductors
N-channel enhancement mode field-effect transistor
03ae07
20
03ae09
20
VGS = 10 V 5 V
ID
(A)
ID
(A)
15
VDS > ID X RDSon
15
4.5 V
10
10
5
5
4V
Tj = 150 ºC
25 ºC
3.5 V
0
0
0
1
2
3
4 VDS (V) 5
Tj = 25 °C
0
1
2
4 VGS (V) 5
3
Tj = 25 °C and 150 °C; VDS > ID × RDSon
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
03aa31
03ae08
a
0.3
VGS = 4 V
4.5 V
Tj = 25 ºC
RDSon
(Ω)
0.25
0.2
5V
10 V
0.15
3
2.8
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-60
0.1
0
5
10
15 ID (A)
20
Tj = 25 °C
-20
20
60
100
140
180
Tj (oC)
R DSon
a = --------------------------R
°
DSon ( 25 C )
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
© Philips Electronics N.V. 2001. All rights reserved.
9397 750 07896
Product specification
Rev. 01 — 16 January 2001
6 of 13
PSMN165-200K
Philips Semiconductors
N-channel enhancement mode field-effect transistor
03aa32
5
VGS(th)
4.5
4
(V)
03aa35
10-1
ID
(A)
max.
10-2
3.5
3
10-3
typ.
2.5
min
2
typ
max
10-4
min
1.5
1
10-5
0.5
0
10-6
-60
-20
20
60
100
140
Tj (oC)
180
1
2
3
4
VGS (V)
5
Tj = 25 °C; VDS = 5 V
ID = 1 mA; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
03ae10
30
gfs
(S)
25
0
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
03ae12
104
Ciss,
Coss,
Crss
(pF)
103
VDS > ID X RDSon
Tj = 25 ºC
20
Ciss
150 ºC
15
Coss
102
10
Crss
5
0
10
0
5
10
15 ID (A)
10-1
20
Tj = 25 °C and 150 °C; VDS > ID × RDSon
10
VDS (V)
102
VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of
drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
© Philips Electronics N.V. 2001. All rights reserved.
9397 750 07896
Product specification
1
Rev. 01 — 16 January 2001
7 of 13
PSMN165-200K
Philips Semiconductors
N-channel enhancement mode field-effect transistor
03ae11
03ae13
20
10
VGS = 0 V
ID = 3 A
VGS
(V) Tj = 25 ºC
8
IS
(A)
VDD = 40 V 100 V 160 V
15
6
10
4
5
Tj = 150 ºC
25 ºC
2
0
0
0
0.2
0.4
0.6
0.8 VSD (V) 1
Tj = 25 °C and 150 °C; VGS = 0 V
0
30
QG (nC)
45
ID = 3 A; VDD = 40 V, 100 V and 160 V
Fig 13. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
Fig 14. Gate-source voltage as a function of gate
charge; typical values.
© Philips Electronics N.V. 2001. All rights reserved.
9397 750 07896
Product specification
15
Rev. 01 — 16 January 2001
8 of 13
PSMN165-200K
Philips Semiconductors
N-channel enhancement mode field-effect transistor
9. Package outline
SO8: plastic small outline package; 8 leads; body width 3.9 mm
SOT96-1
SO8: plastic small outline package; 8 leads; body width 3.9 mm
SOT96-1
D
E
A
X
D
E
A
X
c
y
HE
c
y
v M A
HE
v M A
Z
Z
8
5
5
8
Q
A2
A2
Q
A
(A 3)
A1 1
A
(A 3)
A
pin 1 index
pin 1 index
θ
θ
Lp Lp
1
1
L
44
e
e
bp
bp
0
detail X
2.5
0
L
detail X
w M
w M
5 mm
scale
2.5
5 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
A
(1)
(2)
UNIT
A1
Aare
A3
b p the
c original
D
E dimensions)
e
HE
2 derived
DIMENSIONS
(inch
dimensions
from
mm
max.
UNIT
A
mm
max.
1.75
A1
0.25
A2
0.10
1.45
A3
1.25
0.25b p
0.49
0.25 (1)
5.0
0.36 c 0.19 D 4.8
0.010 0.057
0.0100 0.20
0.490.0190.25
5.0
inches 0.25
0.069 1.45
0.01
0.004 0.049
0.014 0.0075 0.19
1.75
0.25
mm
0.10
inches
1.25
0.36
0.19
4.8
4.0
6.2
HE
5.8
L
v
1.0
0.7
0.25
0.4 L p 0.6 Q
w
y
Z (1)
v0.25
0.1
w
0.7
y
0.3
1.27
e
0.16
4.0
0.15
0.244
6.2 0.041 0.0391.00.028 0.70.01 0.01
0.050
1.27 0.228
1.05 0.016 0.024
0.25
3.8
1.05L
5.8
0.4
0.6
0.244
0.039 0.028
0.041
0.228
0.016 0.024
Notes
REFERENCES
OUTLINE
1. Plastic or metal
protrusions of 0.15 mm maximum per side
are not included.
VERSION
JEDEC
EIAJ
2. Plastic or metal protrusions of 0.25IEC
mm maximum per
side are not included.
076E03
Q
(2)
E3.8
0.019 0.0100 0.20
0.16
Notes 0.010 0.057
0.050
0.069
0.01
0.0075 per0.19
1. Plastic0.004
or metal 0.049
protrusions of 0.150.014
mm maximum
side are0.15
not included.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
SOT96-1
Lp
0.01
EUROPEAN
PROJECTION
OUTLINE
VERSION
IEC
JEDEC
SOT96-1
076E03
MS-012
EIAJ
Zo(1)
8
0o
0.028
0.004
0.25 0.012
0.1
0.7
0.3
0.028
0.004
0.012
0.01
θ
o
8
0o
ISSUE DATE
MS-012
REFERENCES
θ
EUROPEAN
PROJECTION
97-05-22
99-12-27
ISSUE DATE
97-05-22
99-12-27
Fig 15. SOT96-1 (SO8).
© Philips Electronics N.V. 2001. All rights reserved.
9397 750 07896
Product specification
Rev. 01 — 16 January 2001
9 of 13
PSMN165-200K
Philips Semiconductors
N-channel enhancement mode field-effect transistor
10. Revision history
Table 6:
Revision history
Rev Date
01
20010116
CPCN
Description
-
Product specification; initial version
© Philips Electronics N.V. 2001. All rights reserved.
9397 750 07896
Product specification
Rev. 01 — 16 January 2001
10 of 13
PSMN165-200K
Philips Semiconductors
N-channel enhancement mode field-effect transistor
11. Data sheet status
Datasheet status
Product status
Definition [1]
Objective specification
Development
This data sheet contains the design target or goal specifications for product development. Specification may
change in any manner without notice.
Preliminary specification
Qualification
This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips
Semiconductors reserves the right to make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification
Production
This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any
time without notice in order to improve design and supply the best possible product.
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
12. Definitions
13. Disclaimers
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
Right to make changes — Philips Semiconductors reserves the right to
make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve
design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products
are free from patent, copyright, or mask work right infringement, unless
otherwise specified.
© Philips Electronics N.V. 2001 All rights reserved.
9397 750 07896
Product specification
Rev. 01 — 16 January 2001
11 of 13
PSMN165-200K
Philips Semiconductors
N-channel enhancement mode field-effect transistor
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For all other countries apply to: Philips Semiconductors,
Marketing Communications,
Building BE, P.O. Box 218, 5600 MD EINDHOVEN,
The Netherlands, Fax. +31 40 272 4825
Internet: http://www.semiconductors.philips.com
(SCA71)
© Philips Electronics N.V. 2001. All rights reserved.
9397 750 07896
Product specification
Rev. 01 — 16 January 2001
12 of 13
PSMN165-200K
Philips Semiconductors
N-channel enhancement mode field-effect transistor
Contents
1
2
3
4
5
6
7
7.1
8
9
10
11
12
13
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Transient thermal impedance . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
© Philips Electronics N.V. 2001.
Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.
The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.
Date of release: 16 January 2001
Document order number: 9397 750 07896