BSH112 N-channel enhancement mode field-effect transistor Rev. 01 — 25 August 2000 Product specification M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: BSH112 in SOT23. 2. Features ■ ■ ■ ■ ■ TrenchMOS™ technology Very fast switching Logic level compatible Subminiature surface mount package Gate-source ESD protection diodes. 3. Applications c c ■ Relay driver ■ High speed line driver ■ Logic level translator. 4. Pinning information Table 1: Pinning - SOT23, simplified outline and symbol Pin Description 1 gate (g) 2 source (s) 3 drain (d) Simplified outline Symbol 3 d g 03ab44 03ab60 1 2 SOT23 1. TrenchMOS is a trademark of Royal Philips Electronics. s N-channel MOSFET BSH112 Philips Semiconductors N-channel enhancement mode field-effect transistor 5. Quick reference data Table 2: Quick reference data Symbol Parameter Conditions Typ Max Unit Tj = 25 to 150 °C − 60 V VDS drain-source voltage (DC) ID drain current (DC) Tsp = 25 °C; VGS = 10 V − 300 mA Ptot total power dissipation Tsp = 25 °C − 0.83 W Tj junction temperature − 150 °C RDSon drain-source on-state resistance VGS = 10 V; ID = 500 mA 2.8 5 Ω VGS = 4.5 V; ID = 75 mA 3.8 5.3 Ω 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Conditions Min Max Unit VDS Symbol Parameter drain-source voltage (DC) Tj = 25 to 150 °C − 60 V VDGR drain-gate voltage (DC) Tj = 25 to 150 °C; RGS = 20 kΩ − 60 V VGS gate-source voltage (DC) − ±15 V ID drain current (DC) Tsp = 25 °C; VGS = 10 V; Figure 2 and 3 − 300 mA Tsp = 100 °C; VGS = 10 V; Figure 2 − 190 mA A IDM peak drain current Tsp = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 − 1.2 Tsp = 25 °C; Figure 1 Ptot total power dissipation − 0.83 W Tstg storage temperature −65 +150 °C Tj operating junction temperature −65 +150 °C Source-drain diode IS source (diode forward) current (DC) Tsp = 25 °C − 300 mA ISM peak source (diode forward) current Tsp = 25 °C; pulsed; tp ≤ 10 µs − 1.2 A © Philips Electronics N.V. 2000. All rights reserved. 9397 750 07305 Product specification Rev. 01 — 25 August 2000 2 of 13 BSH112 Philips Semiconductors N-channel enhancement mode field-effect transistor 03aa17 03aa25 120 120 der (%) 100 Ider (%) 100 80 80 60 60 40 40 20 20 P 0 0 0 25 50 75 100 125 Tsp 150 (oC) 0 175 25 50 75 100 125 150 175 Tsp (oC) VGS ≥ 4.5 V P tot P der = ---------------------- × 100% P ° ID I der = ------------------- × 100% I ° tot ( 25 C ) D ( 25 C ) Fig 1. Normalized total power dissipation as a function of solder point temperature. Fig 2. Normalized continuous drain current as a function of solder point temperature. 03aa40 10 ID (A) Tsp = 25oC tp = 10 µs RDSon = VDS/ ID 1 100 µs 10-1 D.C. 10-2 1 ms 10 ms 100 ms 1 10 VDS (V) 102 Tsp = 25 °C; IDM is single pulse. Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. © Philips Electronics N.V. 2000. All rights reserved. 9397 750 07305 Product specification Rev. 01 — 25 August 2000 3 of 13 BSH112 Philips Semiconductors N-channel enhancement mode field-effect transistor 7. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter Conditions Value Unit Rth(j-sp) thermal resistance from junction to solder point mounted on a metal clad substrate; Figure 4 150 K/W Rth(j-a) thermal resistance from junction to ambient mounted on a printed circuit board; minimum footprint 350 K/W 7.1 Transient thermal impedance 03aa39 103 Zth(j-sp) (K/W) 102 δ = 0.5 0.2 0.1 δ= P 10 0.05 tp T 0.02 single pulse t tp T 1 10-5 10-4 10-3 10-2 10-1 1 tp (s) 10 Mounted on a metal clad substrate. Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration. © Philips Electronics N.V. 2000. All rights reserved. 9397 750 07305 Product specification Rev. 01 — 25 August 2000 4 of 13 BSH112 Philips Semiconductors N-channel enhancement mode field-effect transistor 8. Characteristics Table 5: Characteristics Tj = 25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit Tj = 25 °C 60 75 − V Tj = −55 °C 55 − − V 16 22 − V Tj = 25 °C 1 2 − V Tj = 150 °C 0.6 − − V Tj = −55 °C − − 3.5 V Tj = 25 °C − 0.01 1.0 µA Tj = 150 °C − − 10 µA − 50 500 nA Tj = 25 °C − 2.8 5 Ω Tj = 150 °C − − 9.25 Ω − 3.8 5.3 Ω Static characteristics V(BR)DSS drain-source breakdown voltage ID = 10 µA; VGS = 0 V IG = ±1 mA; VDS = 0 V V(BR)GSS gate-source breakdown voltage VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 9 IDSS drain-source leakage current VDS = 48 V; VGS = 0 V IGSS gate-source leakage current VGS = ±10 V; VDS = 0 V RDSon drain-source on-state resistance VGS = 10 V; ID = 500 mA; Figure 7 and 8 VGS = 4.5 V; ID = 75 mA; Figure 7 and 8 Tj = 25 °C Dynamic characteristics gfs forward transconductance VDS = 10 V; ID = 200 mA; Figure 11 100 300 − mS Ciss input capacitance − 13 40 pF Coss output capacitance VGS = 0 V; VDS = 10 V; f = 1 MHz; Figure 12 − 8 30 pF Crss reverse transfer capacitance ton turn-on time toff turn-off time − 4 10 pF VDD = 50 V; RD = 250 Ω; VGS = 10 V; RG = 50 Ω; RGS = 50 Ω − 3 10 ns − 9 15 ns Source-drain diode VSD source-drain (diode forward) voltage IS = 300 mA; VGS = 0 V; Figure 13 − 0.85 1.5 V trr reverse recovery time − 30 − ns Qr recovered charge IS = 300 mA; dIS/dt = −100 A/µs; VGS = 0 V; VDS = 25 V − 30 − nC © Philips Electronics N.V. 2000. All rights reserved. 9397 750 07305 Product specification Rev. 01 — 25 August 2000 5 of 13 BSH112 Philips Semiconductors N-channel enhancement mode field-effect transistor 03aa41 03aa43 0.5 0.5 Tj = 25oC ID (A) 0.45 VGS = 10V VDS > ID X RDSon ID 0.45 (A) 0.4 0.4 0.35 0.35 Tj = 25oC 4.5 V 0.3 0.3 0.25 0.25 4V 0.2 150oC 0.2 0.15 0.15 3.5 V 0.1 0.1 3V 0.05 0.05 0 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0 1 2 3 4 5 6 7 8 9 10 VGS (V) VDS (V) Tj = 25 °C Tj = 25 °C and 150 °C; VDS > ID × RDSon Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values. 03aa28 03aa42 2.2 a 2 10 3.5V RDSon 9 (Ω) 8 Tj = 25oC 4V Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values. 1.8 1.6 4.5 V 7 1.4 6 1.2 5 1 4 0.8 VGS = 10V 3 0.6 2 0.4 0.2 1 0 0 0 0.1 0.2 0.3 0.4 ID (A) -60 0.5 Tj = 25 °C 20 60 100 140 180 o T ( C) j R DSon a = --------------------------R DSon ( 25 °C ) Fig 7. Drain-source on-state resistance as a function of drain current; typical values. Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. © Philips Electronics N.V. 2000. All rights reserved. 9397 750 07305 Product specification -20 Rev. 01 — 25 August 2000 6 of 13 BSH112 Philips Semiconductors N-channel enhancement mode field-effect transistor 03aa34 3 VGS(th) 03aa37 10-1 I D (A) 10-2 (V) 2.5 typ 2 min 10-3 typ 1.5 10-4 min 1 10-5 0.5 10-6 0 -60 -20 20 60 100 140 180 Tj (oC) 0 0.5 1 1.5 2 2.5 3 VGS (V) Tj = 25 °C; VDS = 5 V ID = 1 mA; VDS = VGS Fig 9. Gate-source threshold voltage as a function of junction temperature. Fig 10. Sub-threshold drain current as a function of gate-source voltage. 03aa44 gfs (S) 03aa46 102 0.3 VDS > ID X RDSon Ciss, Coss, Crss (pF) 0.25 Tj = 25oC 0.2 Ciss 150oC 0.15 10 Coss 0.1 Crss 0.05 0 1 0 0.1 0.2 0.3 10-1 0.4 0.5 ID (A) Tj = 25 °C and 150 °C; VDS > ID × RDSon 102 10 VDS (V) VGS = 0 V; f = 1 MHz Fig 11. Forward transconductance as a function of drain current; typical values. Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. © Philips Electronics N.V. 2000. All rights reserved. 9397 750 07305 Product specification 1 Rev. 01 — 25 August 2000 7 of 13 BSH112 Philips Semiconductors N-channel enhancement mode field-effect transistor 03aa45 1 IS (A) 0.9 VGS = 0 V 0.8 0.7 150oC 0.6 0.5 0.4 Tj = 25oC 0.3 0.2 0.1 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 VSD (V) Tj = 25 °C and 150 °C; VGS = 0 V Fig 13. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. © Philips Electronics N.V. 2000. All rights reserved. 9397 750 07305 Product specification Rev. 01 — 25 August 2000 8 of 13 BSH112 Philips Semiconductors N-channel enhancement mode field-effect transistor 9. Package outline Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION SOT23 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 TO-236AB Fig 14. SOT23. © Philips Electronics N.V. 2000. All rights reserved. 9397 750 07305 Product specification Rev. 01 — 25 August 2000 9 of 13 BSH112 Philips Semiconductors N-channel enhancement mode field-effect transistor 10. Revision history Table 6: Revision history Rev Date 01 20000825 CPCN Description - Product specification; initial version. © Philips Electronics N.V. 2000. All rights reserved. 9397 750 07305 Product specification Rev. 01 — 25 August 2000 10 of 13 BSH112 Philips Semiconductors N-channel enhancement mode field-effect transistor 11. Data sheet status Datasheet status Product status Definition [1] Objective specification Development This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Product specification Production This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. [1] Please consult the most recently issued data sheet before initiating or completing a design. 12. Definitions 13. Disclaimers Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Right to make changes — Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. © Philips Electronics N.V. 2000 All rights reserved. 9397 750 07305 Product specification Rev. 01 — 25 August 2000 11 of 13 BSH112 Philips Semiconductors N-channel enhancement mode field-effect transistor Philips Semiconductors - a worldwide company Argentina: see South America Australia: Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Tel. +43 160 101, Fax. +43 160 101 1210 Belarus: Tel. +375 17 220 0733, Fax. +375 17 220 0773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Tel. +359 268 9211, Fax. +359 268 9102 Canada: Tel. +1 800 234 7381 China/Hong Kong: Tel. +852 2 319 7888, Fax. +852 2 319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Tel. +45 3 288 2636, Fax. +45 3 157 0044 Finland: Tel. +358 961 5800, Fax. +358 96 158 0920 France: Tel. +33 14 099 6161, Fax. +33 14 099 6427 Germany: Tel. +49 40 23 5360, Fax. +49 402 353 6300 Hungary: see Austria India: Tel. +91 22 493 8541, Fax. +91 22 493 8722 Indonesia: see Singapore Ireland: Tel. +353 17 64 0000, Fax. +353 17 64 0200 Israel: Tel. +972 36 45 0444, Fax. +972 36 49 1007 Italy: Tel. +39 039 203 6838, Fax +39 039 203 6800 Japan: Tel. +81 33 740 5130, Fax. +81 3 3740 5057 Korea: Tel. +82 27 09 1412, Fax. +82 27 09 1415 Malaysia: Tel. +60 37 50 5214, Fax. +60 37 57 4880 Mexico: Tel. +9-5 800 234 7381 Middle East: see Italy Netherlands: Tel. +31 40 278 2785, Fax. +31 40 278 8399 New Zealand: Tel. +64 98 49 4160, Fax. +64 98 49 7811 Norway: Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Tel. +63 28 16 6380, Fax. +63 28 17 3474 Poland: Tel. +48 22 5710 000, Fax. +48 22 5710 001 Portugal: see Spain Romania: see Italy Russia: Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: Tel. +27 11 471 5401, Fax. +27 11 471 5398 South America: Tel. +55 11 821 2333, Fax. +55 11 829 1849 Spain: Tel. +34 33 01 6312, Fax. +34 33 01 4107 Sweden: Tel. +46 86 32 2000, Fax. +46 86 32 2745 Switzerland: Tel. +41 14 88 2686, Fax. +41 14 81 7730 Taiwan: Tel. +886 22 134 2451, Fax. +886 22 134 2874 Thailand: Tel. +66 23 61 7910, Fax. +66 23 98 3447 Turkey: Tel. +90 216 522 1500, Fax. +90 216 522 1813 Ukraine: Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Tel. +44 208 730 5000, Fax. +44 208 754 8421 United States: Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: Tel. +381 11 3341 299, Fax. +381 11 3342 553 For all other countries apply to: Philips Semiconductors, Marketing Communications, Building BE, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 272 4825 Internet: http://www.semiconductors.philips.com (SCA70) © Philips Electronics N.V. 2000. All rights reserved. 9397 750 07305 Product specification Rev. 01 — 25 August 2000 12 of 13 BSH112 Philips Semiconductors N-channel enhancement mode field-effect transistor Contents 1 2 3 4 5 6 7 7.1 8 9 10 11 12 13 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Transient thermal impedance . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 © Philips Electronics N.V. 2000. Printed in The Netherlands All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 25 August 2000 Document order number: 9397 750 07305