PHT4NQ10T N-channel enhancement mode field-effect transistor Rev. 01 — 31 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHT4NQ10T in SOT223. 2. Features ■ TrenchMOS™ technology ■ Very fast switching ■ Surface mount package. 3. Applications ■ Primary side switch in DC to DC converters ■ High speed line driver ■ Fast general purpose switch. c c 4. Pinning information Table 1: Pinning - SOT223, simplified outline and symbol Pin Description 1 gate (g) 2 drain (d) 3 source (g) 4 drain (d) Simplified outline Symbol d 4 g 03ab45 1 2 3 SOT223 1. TrenchMOS is a trademark of Royal Philips Electronics. s 03ab30 N-channel MOSFET PHT4NQ10T Philips Semiconductors N-channel enhancement mode field-effect transistor 5. Quick reference data Table 2: Quick reference data Symbol Parameter Conditions Typ Max Unit Tj = 25 to 150°C − 100 V VDS drain-source voltage (DC) ID drain current (DC) Tsp = 25 °C; VGS = 10 V − 3.5 A Ptot total power dissipation Tsp = 25 °C − 6.9 W Tj junction temperature − 150 °C RDSon drain-source on-state resistance 200 250 mΩ Conditions Min Max Unit VGS = 10 V; ID = 1.75 A 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS drain-source voltage (DC) Tj = 25 to 150 °C − 100 V VDGR drain-gate voltage (DC) Tj = 25 to 150 °C; RGS = 20 kΩ − 100 V VGS gate-source voltage (DC) − ±20 V ID drain current (DC) Tsp = 25 °C; VGS = 10 V; Figure 2 and 3 − 3.5 A Tsp = 100 °C; VGS = 10 V; Figure 2 − 2.2 A IDM peak drain current Tsp = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 − 14 A Ptot total power dissipation Tsp = 25 °C; Figure 1 − 6.9 W Tstg storage temperature −65 +150 °C Tj operating junction temperature −65 +150 °C Source-drain diode IS source (diode forward) current (DC) Tsp = 25 °C − 3.5 A ISM peak source (diode forward) current Tsp = 25 °C; pulsed; tp ≤ 10 µs − 14 A Avalanche ruggedness EAS non-repetitive avalanche energy unclamped inductive load; ID = 3.5 A; tp = 0.2 ms; VDD ≤ 15 V; RGS = 50 Ω; VGS = 10 V; starting Tj = 25 °C; Figure 4 − 45 mJ IAS non-repetitive avalanche current unclamped inductive load; VDD ≤ 15 V; RGS = 50 Ω; VGS = 10 V; Figure 4 − 3.5 A © Philips Electronics N.V. 2000. All rights reserved. 9397 750 07337 Product specification Rev. 01 — 31 July 2000 2 of 13 PHT4NQ10T Philips Semiconductors N-channel enhancement mode field-effect transistor 03aa17 03aa25 120 120 der (%) 100 Ider (%) 100 80 80 60 60 40 40 20 20 P 0 0 0 25 50 75 100 125 Tsp 150 (oC) 0 175 25 50 75 100 125 150 175 Tsp (oC) VGS ≥ 10 V P tot P der = ---------------------- × 100% P ° ID I der = ------------------- × 100% I ° tot ( 25 C ) D ( 25 C ) Fig 1. Normalized total power dissipation as a function of solder point temperature. 102 Fig 2. Normalized continuous drain current as a function of solder point temperature. ID RDSon = VDS/ ID (A) 10 03aa97 10 03aa88 IAS (A) tp = 10 µs 25oC 100 µs 1 D.C. 10-1 10-2 1 1 ms 1 10 10 ms 100 ms Tj prior to avalanche = 125oC 10-1 10-2 102 V (V) 103 DS Tsp = 25 °C; IDM is single pulse. 1 tp (ms) 10 Unclamped inductive load; VDD ≤ 15 V; RGS = 50 Ω; VGS = 10 V; starting Tj = 25 °C and 125°C. Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. Fig 4. Non-repetitive avalanche ruggedness current as a function of pulse duration. © Philips Electronics N.V. 2000. All rights reserved. 9397 750 07337 Product specification 10-1 Rev. 01 — 31 July 2000 3 of 13 PHT4NQ10T Philips Semiconductors N-channel enhancement mode field-effect transistor 7. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter Conditions Value Unit Rth(j-sp) thermal resistance from junction to solder point mounted on a metal clad substrate; Figure 5 18 K/W Rth(j-a) thermal resistance from junction to ambient mounted on a printed circuit board; minimum footprint 150 K/W 7.1 Transient thermal impedance 03aa87 102 Zth(j-sp) (K/W) 10 δ = 0.5 0.2 0.1 1 0.05 0.02 δ= P tp T 10-1 t tp single pulse T 10-2 10-5 10-4 10-3 10-2 10-1 1 10 tp (s) Mounted on a metal clad substrate. Fig 5. Transient thermal impedance from junction to solder point as a function of pulse duration. © Philips Electronics N.V. 2000. All rights reserved. 9397 750 07337 Product specification Rev. 01 — 31 July 2000 4 of 13 PHT4NQ10T Philips Semiconductors N-channel enhancement mode field-effect transistor 8. Characteristics Table 5: Characteristics Tj = 25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit Tj = 25 °C 100 130 − V Tj = −55 °C 89 − − V Static characteristics V(BR)DSS VGS(th) IDSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V gate-source threshold voltage ID = 1 mA; VDS = VGS drain-source leakage current Tj = 25 °C; Figure 10 2 3 4 V Tj = 150 °C; Figure 10 1.2 − − V Tj = −55 °C; Figure 10 − − 6 V Tj = 25 °C − 1 25 µA Tj = 150 °C − 4 250 µA − 10 100 nA Tj = 25 °C; Figure 8 and 9 − 200 250 mΩ Tj = 150 °C; Figure 9 − − 575 mΩ VDS = 100 V; VGS = 0 V IGSS gate-source leakage current VGS = ±20 V; VDS = 0 V RDSon drain-source on-state resistance VGS = 10 V; ID = 1.75 A Dynamic characteristics gfs forward transconductance VDS = 5 V; ID = 3.5 A; Figure 12 − 4.2 − S Qg(tot) total gate charge − 7.4 − nC Qgs gate-source charge ID = 3.5 A; VDS = 80 V; VGS = 10 V; Figure 15 − 1.5 − nC Qgd gate-drain (Miller) charge − 3.3 − nC Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 13 VDD = 50 V; RD = 15 Ω; VGS = 10 V; RG = 6 Ω − 300 − pF − 44 − pF − 21 − pF − 8 − ns tr turn-off rise time − 13 − ns td(off) turn-off delay time − 20 − ns tf turn-off fall time − 11 − ns Source-drain diode VSD source-drain (diode forward) voltage IS = 3.5 A; VGS = 0 V; Figure 14 − 0.87 1.5 V trr reverse recovery time − 50 − ns Qr recovered charge IS = 3.5 A; dIS/dt = −100 A/µs; VGS = 0 V; VDS = 30 V − 100 − nC © Philips Electronics N.V. 2000. All rights reserved. 9397 750 07337 Product specification Rev. 01 — 31 July 2000 5 of 13 PHT4NQ10T Philips Semiconductors N-channel enhancement mode field-effect transistor 03aa90 10 ID (A) 9 8 Tj = 25oC 6V 6 VDS > ID X RDSon 7 6 5.5 V 5 Tj = 25oC 5 4 4 3 2 1 0 ID (A) 9 8 VGS = 10V 7 03aa92 10 5V 3 4.8 V 4.6 V 4.4 V 4.2 V 2 150oC 1 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 VDS (V) Tj = 25 °C 0 1 2 3 4 5 6 7 8 VGS (V) Tj = 25 °C and 150 °C; VDS > ID × RDSon Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical values. 03aa29 03aa91 1 RDSon (Ω) 0.9 0.8 4.4 V 3 a 2.8 2.6 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 4.8V 4.6V 5V 0.7 0.6 0.5 5.5 V 0.4 0.3 6V 0.2 0.1 0 Fig 7. Transfer characteristics: drain current as a function of gate-source voltage; typical values. VGS = 10V Tj = 25oC 0 1 2 3 4 5 6 7 8 9 10 ID (A) Tj = 25 °C -60 20 60 100 140 180 Tj (oC) R DSon a = --------------------------R DSon ( 25 °C ) Fig 8. Drain-source on-state resistance as a function of drain current; typical values. Fig 9. Normalized drain-source on-state resistance factor as a function of junction temperature. © Philips Electronics N.V. 2000. All rights reserved. 9397 750 07337 Product specification -20 Rev. 01 — 31 July 2000 6 of 13 PHT4NQ10T Philips Semiconductors N-channel enhancement mode field-effect transistor 03aa32 5 VGS(th) 4.5 4 (V) 03aa35 10-1 ID (A) max. 10-2 3.5 3 10-3 typ. 2.5 min 2 typ max 10-4 min 1.5 1 10-5 0.5 0 10-6 -60 -20 20 60 100 140 Tj (oC) 180 0 1 2 3 4 VGS (V) Tj = 25 °C; VDS = 5 V ID = 1 mA; VDS = VGS Fig 10. Gate-source threshold voltage as a function of junction temperature. Fig 11. Sub-threshold drain current as a function of gate-source voltage. 03aa93 5 gfs (S) 4.5 5 VDS > ID X RDSon 03aa95 103 Tj = 25oC Ciss, Coss, Crss (pF) 4 3.5 Ciss 150oC 3 2.5 102 2 Coss 1.5 1 0.5 Crss 0 10 0 1 2 3 4 5 6 7 8 9 10 10-1 ID (A) 102 10 VDS (V) Tj = 25 °C and 150 °C; VDS > ID × RDSon VGS = 0 V; f = 1 MHz Fig 12. Forward transconductance as a function of drain current; typical values. Fig 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. © Philips Electronics N.V. 2000. All rights reserved. 9397 750 07337 Product specification 1 Rev. 01 — 31 July 2000 7 of 13 PHT4NQ10T Philips Semiconductors N-channel enhancement mode field-effect transistor 10 IS (A) 9 8 03aa94 15 VGS 14 (V) 13 12 11 10 9 8 7 6 5 4 3 2 1 0 VGS = 0 V 7 6 150oC 5 4 3 Tj = 25oC 2 1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 VSD (V) Tj = 25 °C and 150 °C; VGS = 0 V ID = 3.5 A Tj = 25oC VDS = 20 V VDS = 80 V 0 1 2 3 4 5 6 7 8 9 10 11 12 QG (nC) ID = 3.5 A; VDS = 80 V Fig 14. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. Fig 15. Gate-source voltage as a function of gate charge; typical values. © Philips Electronics N.V. 2000. All rights reserved. 9397 750 07337 Product specification 03aa96 Rev. 01 — 31 July 2000 8 of 13 PHT4NQ10T Philips Semiconductors N-channel enhancement mode field-effect transistor 9. Package outline Plastic surface mounted package; collector pad for good heat transfer; 4 leads D SOT223 E B A X c y HE v M A b1 4 Q A A1 1 2 3 Lp bp e1 w M B detail X e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp b1 c D E e e1 HE Lp Q v w y mm 1.8 1.5 0.10 0.01 0.80 0.60 3.1 2.9 0.32 0.22 6.7 6.3 3.7 3.3 4.6 2.3 7.3 6.7 1.1 0.7 0.95 0.85 0.2 0.1 0.1 OUTLINE VERSION SOT223 REFERENCES IEC JEDEC EIAJ SC-73 EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 Fig 16. SOT223. © Philips Electronics N.V. 2000. All rights reserved. 9397 750 07337 Product specification Rev. 01 — 31 July 2000 9 of 13 PHT4NQ10T Philips Semiconductors N-channel enhancement mode field-effect transistor 10. Revision history Table 6: Revision history Rev Date 01 20000731 CPCN Description - Product specification; initial version. © Philips Electronics N.V. 2000. All rights reserved. 9397 750 07337 Product specification Rev. 01 — 31 July 2000 10 of 13 PHT4NQ10T Philips Semiconductors N-channel enhancement mode field-effect transistor 11. Data sheet status Datasheet status Product status Definition [1] Objective specification Development This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Product specification Production This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. [1] Please consult the most recently issued data sheet before initiating or completing a design. 12. Definitions 13. Disclaimers Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Right to make changes — Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. © Philips Electronics N.V. 2000 All rights reserved. 9397 750 07337 Product specification Rev. 01 — 31 July 2000 11 of 13 PHT4NQ10T Philips Semiconductors N-channel enhancement mode field-effect transistor Philips Semiconductors - a worldwide company Argentina: see South America Australia: Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Tel. +43 160 101, Fax. +43 160 101 1210 Belarus: Tel. +375 17 220 0733, Fax. +375 17 220 0773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Tel. +359 268 9211, Fax. +359 268 9102 Canada: Tel. +1 800 234 7381 China/Hong Kong: Tel. +852 2 319 7888, Fax. +852 2 319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Tel. +45 3 288 2636, Fax. +45 3 157 0044 Finland: Tel. +358 961 5800, Fax. +358 96 158 0920 France: Tel. +33 14 099 6161, Fax. +33 14 099 6427 Germany: Tel. +49 40 23 5360, Fax. +49 402 353 6300 Hungary: see Austria India: Tel. +91 22 493 8541, Fax. +91 22 493 8722 Indonesia: see Singapore Ireland: Tel. +353 17 64 0000, Fax. +353 17 64 0200 Israel: Tel. +972 36 45 0444, Fax. +972 36 49 1007 Italy: Tel. +39 039 203 6838, Fax +39 039 203 6800 Japan: Tel. +81 33 740 5130, Fax. +81 3 3740 5057 Korea: Tel. +82 27 09 1412, Fax. +82 27 09 1415 Malaysia: Tel. +60 37 50 5214, Fax. +60 37 57 4880 Mexico: Tel. +9-5 800 234 7381 Middle East: see Italy Netherlands: Tel. +31 40 278 2785, Fax. +31 40 278 8399 New Zealand: Tel. +64 98 49 4160, Fax. +64 98 49 7811 Norway: Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Tel. +63 28 16 6380, Fax. +63 28 17 3474 Poland: Tel. +48 22 5710 000, Fax. +48 22 5710 001 Portugal: see Spain Romania: see Italy Russia: Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: Tel. +27 11 471 5401, Fax. +27 11 471 5398 South America: Tel. +55 11 821 2333, Fax. +55 11 829 1849 Spain: Tel. +34 33 01 6312, Fax. +34 33 01 4107 Sweden: Tel. +46 86 32 2000, Fax. +46 86 32 2745 Switzerland: Tel. +41 14 88 2686, Fax. +41 14 81 7730 Taiwan: Tel. +886 22 134 2451, Fax. +886 22 134 2874 Thailand: Tel. +66 23 61 7910, Fax. +66 23 98 3447 Turkey: Tel. +90 216 522 1500, Fax. +90 216 522 1813 Ukraine: Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Tel. +44 208 730 5000, Fax. +44 208 754 8421 United States: Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: Tel. +381 11 3341 299, Fax. +381 11 3342 553 For all other countries apply to: Philips Semiconductors, Marketing Communications, Building BE, P.O. 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All rights reserved. 9397 750 07337 Product specification Rev. 01 — 31 July 2000 12 of 13 PHT4NQ10T Philips Semiconductors N-channel enhancement mode field-effect transistor Contents 1 2 3 4 5 6 7 7.1 8 9 10 11 12 13 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Transient thermal impedance . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 © Philips Electronics N.V. 2000. Printed in The Netherlands All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 31 July 2000 Document order number: 9397 750 07337