FAIRCHILD NDS8928

July 1996
NDS8928
Dual N & P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
These dual N- and P -Channel enhancement mode power
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very high
density process is especially tailored to minimize on-state
resistance and provide superior switching performance. These
devices are particularly suited for low voltage applications such
as notebook computer power management and other battery
powered circuits where fast switching, low in-line power loss,
and resistance to transients are needed.
N-Channel 5.5A, 20V, RDS(ON)=0.035Ω @ VGS=4.5V
RDS(ON)=0.045Ω @ VGS=2.7V
P-Channel -3.8A, -20V, RDS(ON)=0.07Ω @ VGS=-4.5V
RDS(ON)=0.1Ω @ VGS=-2.7V.
High density cell design for extremely low RDS(ON).
High power and current handling capability in a widely used
surface mount package.
Dual (N & P-Channel) MOSFET in surface mount package.
________________________________________________________________________________
Absolute Maximum Ratings
Symbol
Parameter
5
4
6
3
7
2
8
1
T A= 25°C unless otherwise noted
N-Channel
P-Channel
Units
VDSS
Drain-Source Voltage
20
-20
V
VGSS
Gate-Source Voltage
8
-8
V
ID
Drain Current - Continuous
5.5
-3.8
A
PD
Power Dissipation for Dual Operation
(Note 1a)
- Pulsed
Power Dissipation for Single Operation
20
(Note 1a)
1.6
(Note 1b)
1
(Note 1c)
TJ,TSTG
-15
2
Operating and Storage Temperature Range
W
0.9
-55 to 150
°C
THERMAL CHARACTERISTICS
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
78
°C/W
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
40
°C/W
© 1997 Fairchild Semiconductor Corporation
NDS8928 Rev.D
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Type
Min
VGS = 0 V, ID = 250 µA
N-Ch
20
VGS = 0 V, ID = -250 µA
P-Ch
-20
VDS = 16 V, VGS = 0 V
N-Ch
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
V
V
TJ = 55oC
VDS = -16 V, VGS = 0 V
1
µA
10
µA
P-Ch
-1
µA
o
-10
µA
IGSSF
Gate - Body Leakage, Forward
VGS = 8 V, VDS = 0 V
All
100
nA
IGSSR
Gate - Body Leakage, Reverse
VGS = -8 V, VDS= 0 V
All
-100
nA
V
TJ = 55 C
ON CHARACTERISTICS (Note 2)
VGS(th)
Gate Threshold Voltage
N-Ch
VDS = VGS, ID = 250 µA
TJ = 125oC
P-Ch
VDS = VGS, ID = -250 µA
TJ = 125oC
RDS(ON)
Static Drain-Source On-Resistance
0.4
0.6
1
0.3
0.35
0.8
-0.4
-0.7
-1
-0.3
-0.5
-0.8
0.029
0.035
0.04
0.063
0.035
0.045
N-Ch
VGS = 4.5 V, ID = 5.5 A
TJ = 125oC
VGS = 2.7 V, ID = 5 A
VGS = -4.5 V, ID = -3.8 A
P-Ch
o
TJ = 125 C
VGS = -2.7 V, ID = -3.2 A
ID(on)
On-State Drain Current
VGS = 4.5 V, VDS = 5 V
N-Ch
20
P-Ch
-15
VGS = 2.7 V, VDS = 5 V
VGS = -4.5 V, VDS = -5 V
Forward Transconductance
0.07
0.085
0.126
0.082
0.1
A
10
VGS = -2.7 V, VDS = -5 V
gFS
0.06
Ω
-5
VDS = 10 V, ID = 5.5 A
N-Ch
14
VDS = -10 V, ID = -3.8 A
P-Ch
9
N-Channel
VDS = 10 V, VGS = 0 V,
f = 1.0 MHz
N-Ch
760
S
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
P-Channel
VDS = -10 V, VGS = 0 V,
f = 1.0 MHz
P-Ch
1120
N-Ch
440
P-Ch
470
N-Ch
160
P-Ch
145
pF
pF
pF
NDS8928 Rev.D
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Type
N-Channel
VDD = 5 V, ID = 1 A,
VGEN = 4.5 V, RGEN = 6 Ω
P-Channel
VDD = -5 V, ID = -1 A,
VGEN = -4.5 V, RGEN = 6 Ω
Min
Typ
Max
Units
N-Ch
11
20
ns
P-Ch
13
20
N-Ch
30
50
P-Ch
53
70
N-Ch
54
80
P-Ch
60
80
N-Ch
20
40
SWITCHING CHARACTERISTICS (Note 2)
tD(on)
Turn - On Delay Time
Turn - On Rise Time
tr
tD(off)
Turn - Off Delay Time
tf
Turn - Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Gate-Drain Charge
Qgd
P-Ch
33
40
N-Channel
VDS = 10 V,
ID = 5.5 A, VGS = 4.5 V
N-Ch
21
30
P-Ch
19
30
N-Ch
2.3
P-Channel
VDS = -10 V,
ID = -3.8 A, VGS = -4.5 V
P-Ch
2.4
N-Ch
6.8
P-Ch
5.5
ns
ns
ns
nC
nC
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
VSD
N-Ch
1.3
P-Ch
-1.3
VGS = 0 V, IS = 1.3 A
(Note 2)
N-Ch
0.8
1.2
VGS = 0 V, IS = -1.3 A
(Note 2)
P-Ch
-0.75
-1.2
A
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θJC is guaranteed by
design while RθCA is determined by the user's board design.
PD(t ) =
T J−TA
R θJ A(t )
=
T J−TA
R θJ C+RθCA(t )
= I 2D (t ) × RDS(ON )
TJ
Typical RθJA for single device operation using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
a. 78oC/W when mounted on a 0.5 in2 pad of 2oz copper.
b. 125oC/W when mounted on a 0.02 in2 pad of 2oz copper.
c. 135oC/W when mounted on a 0.003 in2 pad of 2oz copper.
1a
1b
1c
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
NDS8928 Rev.D
Typical Electrical Characteristics: N-Channel
V GS =4.5V
3.5
3.0
20
RDS(on) , NORMALIZED
25
2
2.7
2.5
2.0
15
10
1.5
5
0
0
0.5
V
DS
1
1.5
2
, DRAIN-SOURCE VOLTAGE (V)
2.5
DRAIN-SOURCE ON-RESISTANCE
I D , DRAIN-SOURCE CURRENT (A)
30
VGS = 2.0V
1.4
2.5
1.2
3.5
4.5
0
5
20
25
30
VGS = 4.5 V
R DS(on), NORMALIZED
-25
0
25
50
75
100
125
DRAIN-SOURCE ON-RESISTANCE
V GS = 4.5V
0.8
25°C
1
-55°C
0.5
150
TJ = 125°C
1.5
0
5
T J , JUNCTION TEMPERATURE (°C)
T = -55°C
J
V DS = 5.0V
25
V th, NORMALIZED
I D , DRAIN CURRENT (A)
125°C
20
15
10
5
0.5
1
1.5
2
2.5
3
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 5. N-Channel Transfer
Characteristics.
25
30
1.4
25°C
3.5
4
GATE-SOURCE THRESHOLD VOLTAGE
30
10
15
20
I , DRAIN CURRENT (A)
D
Figure 4. N-Channel On-Resistance Variation with
Drain Current and Temperature.
Figure 3. N-Channel On-Resistance Variation with
Temperature.
0
15
2
1
0
10
Figure 2. N-Channel On-Resistance Variation with Gate
Voltage and Drain Current.
1.2
0.6
-50
3.0
1
I D = 5.5A
1.4
2.7
I D , DRAIN CURRENT (A)
1.6
R DS(ON), NORMALIZED
1.6
0.8
3
Figure 1. N-Channel On-Region Characteristics.
DRAIN-SOURCE ON-RESISTANCE
1.8
V DS = V GS
I D = 250µA
1.2
1
0.8
0.6
0.4
-50
-25
0
25
50
75
100
TJ , JUNCTION TEMPERATURE (°C)
125
150
Figure 6. N-Channel Gate Threshold Variation
with Temperature.
NDS8928 Rev.D
30
1.12
1.08
1.04
1
0.96
0.92
-50
1
TJ = 125°C
0
25
50
75
100
TJ , JUNCTION TEMPERATURE (°C)
125
-55°C
0.01
0.001
150
0
0.2
0.4
0.6
0.8
1
1.2
V SD , BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 8. N-Channel Body Diode Forward Voltage
Variation with Current and Temperature.
Figure 7. N-Channel Breakdown Voltage Variation
with Temperature.
3000
V GS , GATE-SOURCE VOLTAGE (V)
5
2000
C iss
1000
C oss
500
300
f = 1 MHz
200
C rss
V GS = 0 V
100
0.1
0.2
0.5
1
2
5
10
20
VDS , DRAIN TO SOURCE VOLTAGE (V)
I D = 5.5A
V DS = 5V
15V
4
10V
3
2
1
0
0
5
10
15
20
25
Q g , GATE CHARGE (nC)
Figure 9. N-Channel Capacitance Characteristics.
Figure 10. N-Channel Gate Charge Characteristics.
25
gFS , TRANSCONDUCTANCE (SIEMENS)
CAPACITANCE (pF)
25°C
0.1
0.0001
-25
V GS = 0V
10
5
I D = 250µA
I S , REVERSE DRAIN CURRENT (A)
BV DSS , NORMALIZED
DRAIN-SOURCE BREAKDOWN VOLTAGE
Typical Electrical Characteristics: N-Channel (continued)
V DS = 5.0V
TJ = -55°C
20
25°C
15
125°C
10
5
0
0
5
10
15
20
I D , DRAIN CURRENT (A)
Figure 11. N-Channel Transconductance Variation
with Drain Current and Temperature.
NDS8928 Rev.D
Typical Electrical Characteristics: P-Channel (continued)
2
V
= -4.5V
-16
-3.5
-3.0
-2.7
R DS(on), NORMALIZED
I D , DRAIN-SOURCE CURRENT (A)
GS
-2.5
-12
-8
-2.0
-4
-1.5
0
0
-1
-2
-3
V DS , DRAIN-SOURCE VOLTAGE (V)
DRAIN-SOURCE ON-RESISTANCE
-20
-3.0
-3.5
1.2
-4.0
-4.5
-5.0
1
0
-4
-8
D
-12
-16
-20
, DRAIN CURRENT (A)
Figure 13. P-Channel On-Resistance Variation with
Gate Voltage and Drain Current.
2
V G S = -4.5V
I D = -3.8A
1.4
R DS(on), NORMALIZED
V GS = -4.5V
1.2
1
0.8
0.6
-50
-25
0
25
50
75
100
TJ , JUNCTION TEMPERATURE (°C)
125
DRAIN-SOURCE ON-RESISTANCE
R DS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
-2.7
1.4
I
1.6
T J = 125°C
1.5
25°C
1
-55°C
0.5
150
0
-4
I
Figure 14. P-Channel On-Resistance Variation with
Temperature.
D
-8
-12
, DRAIN CURRENT (A)
-16
-20
Figure 15. P-Channel On-Resistance Variation with
Drain Current and Temperature.
1.2
V DS = -10V
T = -55°C
J
25°C
125°C
V th , NORMALIZED
-16
-12
-8
-4
0
-0.5
-1
-1.5
-2
-2.5
-3
VGS , GATE TO SOURCE VOLTAGE (V)
-3.5
Figure 16. P-Channel Transfer Characteristics.
-4
GATE-SOURCE THRESHOLD VOLTAGE
-20
I D, DRAIN CURRENT (A)
VGS = -2.5V
1.6
0.8
-4
Figure 12. P-Channel On-Region Characteristics.
0
1.8
VDS = V GS
1.1
I D = -250µA
1
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75
100
TJ , JUNCTION TEMPERATURE (°C)
125
150
Figure 17. P-Channel Gate Threshold Variation
with Temperature.
NDS8928 Rev.D
Typical Electrical Characteristics: P-Channel (continued)
20
10
I D = -250µA
1.06
1.04
1.02
1
0.98
0.94
-50
T = 125°C
J
-25
0
T
J
-55°C
0.01
0.001
25
50
75
100
, JUNCTION TEMPERATURE (°C)
125
150
0.0001
Figure 18. P-Channel Breakdown Voltage
Variation with Temperature.
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-VSD , BODY DIODE FORWARD VOLTAGE (V)
1.6
Figure 19. P-Channel Body Diode Forward
Voltage Variation with Current and
Temperature.
2000
5
1500
I D = -3.8A
-V GS , GATE-SOURCE VOLTAGE (V)
C iss
1000
CAPACITANCE (pF)
25°C
0.1
S
0.96
VGS = 0V
2
1
-I , REVERSE DRAIN CURRENT (A)
BV DSS , NORMALIZED
DRAIN-SOURCE BREAKDOWN VOLTAGE
1.1
1.08
800
C oss
600
400
C rss
f = 1 MHz
200
V GS = 0 V
100
0.1
0.2
0.5
1
2
3
5
10
-15V
-10V
3
2
1
0
20
-V DS , DRAIN TO SOURCE VOLTAGE (V)
V DS = -5.0V
4
0
5
10
15
20
25
Q g , GATE CHARGE (nC)
Figure 20. P-Channel Capacitance Characteristics.
Figure 21. P-Channel Gate Charge Characteristics.
VDS = -10V
TJ = -55°C
15
25°C
125°C
10
5
g
FS
, TRANSCONDUCTANCE (SIEMENS)
20
0
0
-4
-8
ID
-12
-16
-20
, DRAIN CURRENT (A)
Figure 22. P-Channel Transconductance Variation
with Drain Current and Temperature.
NDS8928 Rev.D
Typical Thermal Characteristics: N & P-Channel
Total Power for Dual Operation
2
1a
Power for Single Operation
1.5
1b
1
1c
4.5"x5" FR-4 Board
TA = 25 o C
Still Air
0.5
0
0.2
0.4
0.6
0.8
2oz COPPER MOUNTING PAD AREA (in 2 )
1a
5
1b
4.5"x5" FR-4 Board
TA = 25 oC
Still Air
VGS = 4.5V
4 1c
3
0
0.1
30
20
10
4
1a
3.5
1b
1c
0.1
0.2
0.3
0.4
2oz COPPER MOUNTING PAD AREA (in2 )
0.5
S(O
IM
0.4
0.5
100
1 m us
s
IT
10m
100
1
0.1
0.01
0.1
V GS = 4.5V
SINGLE PULSE
R θJA = See Note 1c
TA = 25°C
0.2
0.5
1
s
ms
1s
10s
DC
0.3
0.03
GS
0
RD
L
N)
3
D
4.5"x5" FR-4 Board
TA = 25 oC
Still Air
V = -4.5V
2.5
0.3
Figure 24. N-Ch Maximum Steady- State
Drain Current versus Copper Mounting
Pad Area.
4.5
3
0.2
2oz COPPER MOUNTING PAD AREA (in2 )
I , DRAIN CURRENT (A)
-I D, STEADY-STATE DRAIN CURRENT (A)
6
1
Figure 23. SO-8 Dual Package Maximum
Steady-State Power Dissipation versus
Copper Mounting Pad Area.
2
7
I D, STEADY-STATE DRAIN CURRENT (A)
STEADY-STATE POWER DISSIPATION (W)
2.5
2
5
10
20
40
V DS, DRAIN-SOURCE VOLTAGE (V)
Figure 26. N-Channel Maximum Safe Operating
Area.
Figure 25. P-Ch Maximum Steady- State
Drain Current versus Copper Mounting
Pad Area.
30
10
-I D , DRAIN CURRENT (A)
10
3
RD
S(O
LIM
N)
IT
1m
10
1
s
ms
1s
10
0.3
0.1
0u
10 s
0m
s
s
DC
V GS = -4.5V
SINGLE PULSE
0.03
0.01
0.1
R θJ A = See Note 1c
T A = 25°C
0.2
0.5
1
2
5
10
20
30
- V DS , DRAIN-SOURCE VOLTAGE (V)
Figure 27. P-Channel Maximum Safe Operating
Area.
NDS8928 Rev.D
Typical Thermal Characteristics: N & P-Channel
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
0.5
D = 0.5
0.2
0.2
R θJA (t) = r(t) * R θJA
R JA = See Note 1c
θ
0.1
0.1
0.05
0.05
P(pk)
0.02
0.02
0.01
0.01
t1
Single Pulse
0.005
t2
TJ - TA = P * R JA (t)
θ
Duty Cycle, D = t 1 / t 2
0.002
0.001
0.0001
0.001
0.01
0.1
1
10
100
300
t1 , TIME (sec)
Figure 28. Transient Thermal Response Curve.
Note:
Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change
depending on the circuit board design.
t on
VDD
t d(on)
R GEN
t d(off)
tf
90%
90%
V OUT
D
VGS
tr
RL
V IN
t off
VOUT
10%
10%
DUT
G
90%
S
V IN
50%
50%
10%
PULSE WIDTH
Figure 29. N or P-Channel Switching Test Circuit.
Figure 30. N or P-Channel Switching Waveforms.
NDS8928 Rev.D
SO-8 Tape and Reel Data and Package Dimensions
SOIC(8lds) Packaging
Configuration: Figure 1.0
Packaging Description:
EL ECT ROST AT IC
SEN SIT IVE DEVICES
DO NO T SHI P OR STO RE N EAR ST RO NG EL ECT ROST AT IC
EL ECT RO M AGN ETI C, M AG NET IC O R R ADIO ACT IVE FI ELD S
TNR D ATE
PT NUMB ER
PEEL STREN GTH MIN ___ __ ____ __ ___gms
MAX ___ ___ ___ ___ _ gms
Antistatic Cover Tape
ESD Label
SOIC-8 parts are shipped in tape. The carrier tape is
made from a dissipative (carbon filled) polycarbonate
resin. The cover tape is a multilayer film (Heat Activated
Adhesive in nature) primarily composed of polyester film,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standard option are shipped with
2,500 units per 13" or 330cm diameter reel. The reels are
dark blue in color and is made of polystyrene plastic (antistatic coated). Other option comes in 500 units per 7" or
177cm diameter reel. This and some other options are
further described in the Packaging Information table.
These full reels are individually barcode labeled and
placed inside a standard intermediate box (illustrated in
figure 1.0) made of recyclable corrugated brown paper.
One box contains two reels maximum. And these boxes
are placed inside a barcode labeled shipping box which
comes in different sizes depending on the number of parts
shipped.
Static Dissipative
Embossed Carrier Tape
F63TNR
Label
Customized
Label
F852
NDS
9959
F852
NDS
9959
F852
NDS
9959
F852
NDS
9959
F852
NDS
9959
Pin 1
SOIC (8lds) Packaging Information
Packaging Option
Packaging type
Qty per Reel/Tube/Bag
Standard
(no flow code)
TNR
2,500
L86Z
F011
D84Z
Rail/Tube
TNR
TNR
95
4,000
500
13" Dia
-
13" Dia
7" Dia
343x64x343
530x130x83
343x64x343
184x187x47
Max qty per Box
5,000
30,000
8,000
1,000
Weight per unit (gm)
0.0774
0.0774
0.0774
0.0774
Weight per Reel (kg)
0.6060
-
0.9696
0.1182
Reel Size
Box Dimension (mm)
SOIC-8 Unit Orientation
Note/Comments
343mm x 342mm x 64mm
Standard Intermediate box
ESD Label
F63TNR Label sample
F63TNLabel
F63TN Label
LOT: CBVK741B019
QTY: 2500
FSID: FDS9953A
SPEC:
D/C1: D9842
D/C2:
QTY1:
QTY2:
SPEC REV:
CPN:
N/F: F
ESD Label
(F63TNR)3
SOIC(8lds) Tape Leader and Trailer
Configuration: Figure 2.0
Carrier Tape
Cover Tape
Components
Trailer Tape
640mm minimum or
80 empty pockets
Leader Tape
1680mm minimum or
210 empty pockets
July 1999, Rev. B
SO-8 Tape and Reel Data and Package Dimensions, continued
SOIC(8lds) Embossed Carrier Tape
Configuration: Figure 3.0
P0
D0
T
E1
F
K0
Wc
W
E2
B0
Tc
A0
D1
P1
User Direction of Feed
Dimensions are in millimeter
Pkg type
A0
B0
SOIC(8lds)
(12mm)
6.50
+/-0.10
5.30
+/-0.10
W
12.0
+/-0.3
D0
D1
E1
E2
1.55
+/-0.05
1.60
+/-0.10
1.75
+/-0.10
F
10.25
min
5.50
+/-0.05
P1
P0
8.0
+/-0.1
4.0
+/-0.1
K0
2.1
+/-0.10
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).
T
Wc
0.450
+/0.150
9.2
+/-0.3
0.06
+/-0.02
0.5mm
maximum
20 deg maximum
Typical
component
cavity
center line
B0
Tc
0.5mm
maximum
20 deg maximum component rotation
Typical
component
center line
Sketch A (Side or Front Sectional View)
A0
Component Rotation
Sketch C (Top View)
Component lateral movement
Sketch B (Top View)
SOIC(8lds) Reel Configuration: Figure 4.0
Component Rotation
W1 Measured at Hub
Dim A
Max
Dim A
max
See detail AA
Dim N
7" Diameter Option
B Min
Dim C
See detail AA
W3
13" Diameter Option
Dim D
min
W2 max Measured at Hub
DETAIL AA
Dimensions are in inches and millimeters
Tape Size
Reel
Option
Dim A
Dim B
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
2.165
55
0.488 +0.078/-0.000
12.4 +2/0
0.724
18.4
0.469 – 0.606
11.9 – 15.4
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
7.00
178
0.488 +0.078/-0.000
12.4 +2/0
0.724
18.4
0.469 – 0.606
11.9 – 15.4
12mm
7" Dia
7.00
177.8
12mm
13" Dia
13.00
330
 1998 Fairchild Semiconductor Corporation
Dim C
Dim D
Dim N
Dim W1
Dim W2
Dim W3 (LSL-USL)
July 1999, Rev. B
SO-8 Tape and Reel Data and Package Dimensions, continued
SOIC-8 (FS PKG Code S1)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.0774
9
September 1998, Rev. A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench 
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
ACEx™
CoolFET™
CROSSVOLT™
E2CMOSTM
FACT™
FACT Quiet Series™
FAST®
FASTr™
GTO™
HiSeC™
SyncFET™
TinyLogic™
UHC™
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. D