FAIRCHILD NDT410EL(J23Z)

August 1996
NDT410EL
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
Features
2.1A 100V. RDS(ON) = 0.25Ω @ VGS = 5V.
Power SOT N-Channel logic level enhancement mode
power field effect transistors are produced using
Fairchild's proprietary, high cell density, DMOS
technology. This very high density process is especially
tailored to minimize on-state resistance, provide superior
switching performance, and withstand high energy pulses
in the avalanche and commutation modes. These devices
are particularly suited for low voltage applications such as
automotive, DC/DC converters, PWM motor controls, and
other battery powered circuits where fast switching, low
in-line power loss, and resistance to transients are needed.
High density cell design for extremely low RDS(ON).
High power and current handling capability in a widely used
surface mount package.
___________________________________________________________________________________________
D
G
D
D
G
S
S
ABSOLUTE MAXIMUM RATINGS T A = 25°C unless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
ID
Drain Current - Continuous
PD
Maximum Power Dissipation
(Note 1a)
- Pulsed
Units
100
V
20
V
2.1
A
10
(Note 1a)
3
(Note 1b)
1.3
(Note 1c)
TJ,TSTG
NDT410EL
Operating and Storage Temperature Range
W
1.1
-65 to 150
°C
THERMAL CHARACTERISTICS
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
42
°C/W
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
12
°C/W
* Order option J23Z for cropped center drain lead.
© 1997 Fairchild Semiconductor Corporation
NDT410EL Rev. B1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE AVALANCHE RATINGS (Note 2)
W DSS
Single Pulse Drain-Source Avalanche Energy VDD = 50 V, ID = 10A
15
mJ
IAR
Maximum Drain-Source Avalanche Current
10
A
1
µA
10
µA
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
IDSS
Zero Gate Voltage Drain Current
VDS = 80 V, VGS = 0 V
100
V
TJ= 55°C
IGSSF
Gate - Body Leakage, Forward
VGS = 20 V, VDS = 0 V
100
nA
IGSSR
Gate - Body Leakage, Reverse
VGS = -20 V, VDS= 0 V
-100
nA
2
V
ON CHARACTERISTICS (Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
RDS(ON)
Static Drain-Source On-Resistance
VGS = 5 V, ID = 2.1 A
ID(on)
On-State Drain Current
VGS = 5 V, VDS = 5 V
gFS
Forward Transconductance
VDS = 10 V, ID = 2.1 A
6
S
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
528
pF
85
pF
20
pF
TJ= 125°C
1
1.5
0.65
1.1
1.5
0.2
0.25
0.37
0.5
TJ= 125°C
10
Ω
A
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 2)
tD(on)
Turn - On Delay Time
tr
Turn - On Rise Time
tD(off)
Turn - Off Delay Time
tf
Turn - Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
1.5
nC
Qgd
Gate-Drain Charge
5.6
nC
VDD = 50 V, ID = 2.1 A,
VGEN = 5 V, RGEN = 25 Ω
VDS = 80 V, ID = 2.1 A, VGS = 5 V
9
20
ns
72
120
ns
49
80
ns
47
80
ns
10
16
nC
NDT410EL Rev. B1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Maximum Continuous Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 2.3 A
trr
Reverse Recovery Time
VGS = 0 V, IS = 2.3 A, dIF/dt = 100A/µs
(Note 2)
2.3
A
1.3
V
150
ns
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by
design while RθCA is determined by the user's board design.
T −T
T J −T A
PD (t) = R JθJA (t)A = R θJC+R
= I 2D(t) × R DS(ON)@T J
θCA (t)
Typical RθJA using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
a. 42oC/W when mounted on a 1 in2 pad of 2oz copper.
b. 95oC/W when mounted on a 0.04 in2 pad of 2oz copper.
c. 110oC/W when mounted on a 0.006 in2 pad of 2oz copper.
1a
1b
1c
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
NDT410EL Rev. B1
Typical Electrical Characteristics
10
2
4.0
3.5
5.0
R DS(on), NORMALIZED
I D , DRAIN-SOURCE CURRENT (A)
6.0
8
6
3.0
4
2
2.5
DRAIN-SOURCE ON-RESISTANCE
V GS = 10V
0
1
2
3
4
V DS , DRAIN-SOURCE VOLTAGE (V)
5
5.0
6.0
10
1
0
2
I
D
4
6
, DRAIN CURRENT (A)
8
10
Figure 2. On-Resistance Variation with
Gate Voltage and Drain Current.
2.5
3
D
= 2.1A
V GS = 5V
V GS = 5V
R DS(on), NORMALIZED
2
1.5
1
0.5
-50
-25
0
25
50
75
100
125
TJ , JUNCTION TEMPERATURE (°C)
150
DRAIN-SOURCE ON-RESISTANCE
I
TJ = 125°C
2
25°C
1
-55°C
0
175
0
2
I
Figure 3. On-Resistance Variation
with Temperature.
D
4
6
, DRAIN CURRENT (A)
8
10
Figure 4. On-Resistance Variation with Drain
Current and Temperature.
1.2
10
V DS = 10V
T
J
= -55°C 2 5
125
V th , NORMALIZED
8
6
4
2
0
1
2
V
GS
3
4
, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
5
GATE-SOURCE THRESHOLD VOLTAGE (V)
R DS(ON) , NORMALIZED
4.0
6
Figure 1. On-Region Characteristics.
DRAIN-SOURCE ON-RESISTANCE
3.5
0.5
0
I D , DRAIN CURRENT (A)
V GS = 3.0V
1.5
V DS = V
1.1
GS
I D = 250 µA
1
0.9
0.8
0.7
0.6
0.5
-50
-25
0
25
50
75
100
125
T , JUNCTION TEMPERATURE (°C)
150
175
J
Figure 6. Gate Threshold Variation with
Temperature.
NDT410EL Rev. B1
1.15
10
I D = 250µA
1.1
1.05
1
0.95
0.9
-50
-25
0
T
J
25
50
75
100
125
, JUNCTION TEMPERATURE (°C)
150
TJ = 125°C
1
25°C
0.5
-55°C
0.1
0.05
V
0.6
0.8
1
, BODY DIODE FORWARD VOLTAGE (V)
10
VGS , GATE-SOURCE VOLTAGE (V)
500
300
200
C oss
100
50
C rss
f = 1 MHz
V DS = 20V
I D = 2.1A
C iss
V GS = 0 V
50V
80V
8
6
4
2
0
0.2
0.5
1
2
5
10
20
50
0
5
VDS , DRAIN TO SOURCE VOLTAGE (V)
Figure 9. Capacitance Characteristics.
t d(on)
20
t off
tr
t d(off)
tf
90%
90%
V OUT
D
VOUT
R GEN
15
t on
RL
V IN
10
Q g , GATE CHARGE (nC)
Figure 10. Gate Charge Characteristics.
VDD
VGS
1.2
SD
Figure 8. Body Diode Forward Voltage
Variation with Current and Temperature.
1300
1000
CAPACITANCE (pF)
= 0V
0.01
0.4
175
Figure 7. Breakdown Voltage Variation with
Temperature.
10
0.1
V
GS
5
I S , REVERSE DRAIN CURRENT (A)
BV DSS , NORMALIZED
DRAIN-SOURCE BREAKDOWN VOLTAGE (V)
Typical Electrical Characteristics (continued)
10%
10%
INVERTED
DUT
G
90%
S
V IN
50%
50%
10%
PULSE WIDTH
Figure 11. Switching Test Circuit.
Figure 12. Switching Waveforms.
NDT410EL Rev. B1
Typical Electrical and Thermal Characteristics
12
3.5
10
STEADY-STATE POWER DISSIPATION (W)
T J = -55°C
25°C
8
125°C
6
4
2
g
FS
, TRANSCONDUCTANCE (SIEMENS)
VDS = 10V
0
0
2
I
D
4
6
, DRAIN CURRENT (A)
8
10
2.5
2
1.5
1b
1c
1
4.5"x5" FR-4 Board
o
TA = 2 5 C
Still Air
0.5
0
Figure 13. Transconductance Variation with Drain
Current and Temperature.
0.2
0.4
0.6
0.8
2oz COPPER MOUNTING PAD AREA (in 2 )
1
Figure 14. SOT-223 Maximum Steady- State Power
Dissipation versus Copper Mounting Pad Area.
3
20
10
10
2.5
I D , DRAIN CURRENT (A)
I D , STEADY-STATE DRAIN CURRENT (A)
1a
3
1a
2
1.5
1b
1c
1
4.5"x5" FR-4 Board
TA = 2 5 o C
0.5
5
S
RD
2
N)
Li
m
10
1m
10
1
0.5
VGS = 5V
SINGLE PULSE
T C = 25°C
0.2
Still Air
(O
it
10
DC
m
1s
0µ
µs
s
s
s
s
VG S = 5 V
0.1
0.1
0
0
0.2
0.4
0.6
0.8
2oz COPPER MOUNTING PAD AREA (in2 )
1
0.2
0.5
1
2
5
10
20
50
VDS , DRAIN-SOURCE VOLTAGE (V)
100
200
Figure 16. Maximum Safe
Operating Area.
Figure 15. Maximum Steady-State Drain Current
versus Copper Mounting Pad Area.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
0.5
D = 0.5
0.2
0.2
0.1
0.1
0.05
0.05
0.02
0.02
0.01
R JA (t) = r(t) * R JA
θ
θ
R JA = See Note 1 c
θ
P(pk)
0.01
t1
0.005
TJ - T
=P * R
(t)
θJA
Duty Cycle, D = t 1 / t 2
Single Pulse
0.002
0.001
0.0001
t2
0.001
0.01
0.1
1
A
10
100
300
t 1 , TIME (sec)
Figure 17. Transient Thermal Response Curve.
Note:
Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change
depending on the circuit board design.
NDT410EL Rev. B1
SOT-223 Tape and Reel Data and Package Dimensions
SOT-223 Packaging
Configuration: Figure 1.0
Customized Label
Packaging Description:
F63TNR Label
Antistatic Cover Tape
SOT-223 parts are shipped in tape. The carrier tape is
made from a dissipative (carbon filled) polycarbonate
resin. The cover tape is a multilayer film (Heat Activated
Adhesive in nature) primarily composed of polyester film,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standard option are shipped with
2,500 units per 13" or 330cm diameter reel. The reels are
dark blue in color and is made of polystyrene plastic (antistatic coated). Other option comes in 500 units per 7" or
177cm diameter reel. This and some other options are
further described in the Packaging Information table.
These full reels are individually barcode labeled and
placed inside a standard intermediate box (illustrated in
figure 1.0) made of recyclable corrugated brown paper.
One box contains two reels maximum. And these boxes
are placed inside a barcode labeled shipping box which
comes in different sizes depending on the number of parts
shipped.
Static Dissipative
Embossed Carrier Tape
F852
014
F852
014
F852
014
F852
014
SOT-223 Packaging Information
Packaging Option
Packaging type
Qty per Reel/Tube/Bag
Reel Size
Box Dimension (mm)
Standard
(no flow code)
TNR
2,500
D84Z
SOT-223 Unit Orientation
TNR
500
13" Dia
7" Dia
343x64x343
184x187x47
Max qty per Box
5,000
1,000
Weight per unit (gm)
0.1246
0.1246
Weight per Reel (kg)
0.7250
0.1532
343mm x 342mm x 64mm
Intermediate box for Standard
F63TNR Label
Note/Comments
F63TNR Label
F63TNR Label sample
184mm x 184mm x 47mm
Pizza Box for D84Z Option
SOT-223 Tape Leader and Trailer
Configuration: Figure 2.0
LOT: CBVK741B019
QTY: 3000
FSID: PN2222A
SPEC:
D/C1: D9842
D/C2:
QTY1:
QTY2:
SPEC REV:
CPN:
N/F: F
(F63TNR)3
Carrier Tape
Cover Tape
Components
Trailer Tape
300mm minimum or
38 empty pockets
Leader Tape
500mm minimum or
62 empty pockets
September 1999, Rev. B
SOT-223 Tape and Reel Data and Package Dimensions, continued
SOT-223 Embossed Carrier Tape
Configuration: Figure 3.0
P0
D0
T
E1
F
K0
Wc
W
E2
B0
Tc
A0
D1
P1
User Direction of Feed
Dimensions are in millimeter
Pkg type
SOT-223
(12mm)
A0
6.83
+/-0.10
B0
7.42
+/-0.10
W
12.0
+/-0.3
D0
D1
1.55
+/-0.05
1.50
+/-0.10
E1
E2
1.75
+/-0.10
F
10.25
min
P1
5.50
+/-0.05
P0
8.0
+/-0.1
4.0
+/-0.1
K0
1.88
+/-0.10
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).
T
Wc
0.292
+/0.0130
9.5
+/-0.025
0.06
+/-0.02
0.5mm
maximum
20 deg maximum
Typical
component
cavity
center line
B0
Tc
0.5mm
maximum
20 deg maximum component rotation
Typical
component
center line
Sketch A (Side or Front Sectional View)
A0
Component Rotation
Sketch C (Top View)
Component lateral movement
Sketch B (Top View)
SOT-223 Reel Configuration: Figure 4.0
Component Rotation
W1 Measured at Hub
Dim A
Max
Dim A
max
See detail AA
Dim N
7" Diameter Option
B Min
Dim C
See detail AA
W3
13" Diameter Option
Dim D
min
W2 max Measured at Hub
DETAIL AA
Dimensions are in inches and millimeters
Tape Size
Reel
Option
Dim A
Dim B
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
5.906
150
0.488 +0.078/-0.000
12.4 +2/0
0.724
18.4
0.469 – 0.606
11.9 – 15.4
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
7.00
178
0.488 +0.078/-0.000
12.4 +2/0
0.724
18.4
0.469 – 0.606
11.9 – 15.4
12mm
7" Dia
7.00
177.8
12mm
13" Dia
13.00
330
Dim C
Dim D
Dim N
Dim W1
Dim W2
Dim W3 (LSL-USL)
July 1999, Rev. B
SOT-223 Tape and Reel Data and Package Dimensions, continued
SOT-223 (FS PKG Code 47)
1:1
Scale 1:1 on letter size paper
Part Weight per unit (gram): 0.1246
September 1999, Rev. C
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not intended to be an exhaustive list of all such trademarks.
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As used herein:
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support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.