August 1996 NDT410EL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features 2.1A 100V. RDS(ON) = 0.25Ω @ VGS = 5V. Power SOT N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. ___________________________________________________________________________________________ D G D D G S S ABSOLUTE MAXIMUM RATINGS T A = 25°C unless otherwise noted Symbol Parameter VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID Drain Current - Continuous PD Maximum Power Dissipation (Note 1a) - Pulsed Units 100 V 20 V 2.1 A 10 (Note 1a) 3 (Note 1b) 1.3 (Note 1c) TJ,TSTG NDT410EL Operating and Storage Temperature Range W 1.1 -65 to 150 °C THERMAL CHARACTERISTICS RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 42 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 12 °C/W * Order option J23Z for cropped center drain lead. © 1997 Fairchild Semiconductor Corporation NDT410EL Rev. B1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units DRAIN-SOURCE AVALANCHE RATINGS (Note 2) W DSS Single Pulse Drain-Source Avalanche Energy VDD = 50 V, ID = 10A 15 mJ IAR Maximum Drain-Source Avalanche Current 10 A 1 µA 10 µA OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V 100 V TJ= 55°C IGSSF Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate - Body Leakage, Reverse VGS = -20 V, VDS= 0 V -100 nA 2 V ON CHARACTERISTICS (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA RDS(ON) Static Drain-Source On-Resistance VGS = 5 V, ID = 2.1 A ID(on) On-State Drain Current VGS = 5 V, VDS = 5 V gFS Forward Transconductance VDS = 10 V, ID = 2.1 A 6 S VDS = 25 V, VGS = 0 V, f = 1.0 MHz 528 pF 85 pF 20 pF TJ= 125°C 1 1.5 0.65 1.1 1.5 0.2 0.25 0.37 0.5 TJ= 125°C 10 Ω A DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 2) tD(on) Turn - On Delay Time tr Turn - On Rise Time tD(off) Turn - Off Delay Time tf Turn - Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge 1.5 nC Qgd Gate-Drain Charge 5.6 nC VDD = 50 V, ID = 2.1 A, VGEN = 5 V, RGEN = 25 Ω VDS = 80 V, ID = 2.1 A, VGS = 5 V 9 20 ns 72 120 ns 49 80 ns 47 80 ns 10 16 nC NDT410EL Rev. B1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.3 A trr Reverse Recovery Time VGS = 0 V, IS = 2.3 A, dIF/dt = 100A/µs (Note 2) 2.3 A 1.3 V 150 ns Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. T −T T J −T A PD (t) = R JθJA (t)A = R θJC+R = I 2D(t) × R DS(ON)@T J θCA (t) Typical RθJA using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment: a. 42oC/W when mounted on a 1 in2 pad of 2oz copper. b. 95oC/W when mounted on a 0.04 in2 pad of 2oz copper. c. 110oC/W when mounted on a 0.006 in2 pad of 2oz copper. 1a 1b 1c Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. NDT410EL Rev. B1 Typical Electrical Characteristics 10 2 4.0 3.5 5.0 R DS(on), NORMALIZED I D , DRAIN-SOURCE CURRENT (A) 6.0 8 6 3.0 4 2 2.5 DRAIN-SOURCE ON-RESISTANCE V GS = 10V 0 1 2 3 4 V DS , DRAIN-SOURCE VOLTAGE (V) 5 5.0 6.0 10 1 0 2 I D 4 6 , DRAIN CURRENT (A) 8 10 Figure 2. On-Resistance Variation with Gate Voltage and Drain Current. 2.5 3 D = 2.1A V GS = 5V V GS = 5V R DS(on), NORMALIZED 2 1.5 1 0.5 -50 -25 0 25 50 75 100 125 TJ , JUNCTION TEMPERATURE (°C) 150 DRAIN-SOURCE ON-RESISTANCE I TJ = 125°C 2 25°C 1 -55°C 0 175 0 2 I Figure 3. On-Resistance Variation with Temperature. D 4 6 , DRAIN CURRENT (A) 8 10 Figure 4. On-Resistance Variation with Drain Current and Temperature. 1.2 10 V DS = 10V T J = -55°C 2 5 125 V th , NORMALIZED 8 6 4 2 0 1 2 V GS 3 4 , GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 5 GATE-SOURCE THRESHOLD VOLTAGE (V) R DS(ON) , NORMALIZED 4.0 6 Figure 1. On-Region Characteristics. DRAIN-SOURCE ON-RESISTANCE 3.5 0.5 0 I D , DRAIN CURRENT (A) V GS = 3.0V 1.5 V DS = V 1.1 GS I D = 250 µA 1 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 100 125 T , JUNCTION TEMPERATURE (°C) 150 175 J Figure 6. Gate Threshold Variation with Temperature. NDT410EL Rev. B1 1.15 10 I D = 250µA 1.1 1.05 1 0.95 0.9 -50 -25 0 T J 25 50 75 100 125 , JUNCTION TEMPERATURE (°C) 150 TJ = 125°C 1 25°C 0.5 -55°C 0.1 0.05 V 0.6 0.8 1 , BODY DIODE FORWARD VOLTAGE (V) 10 VGS , GATE-SOURCE VOLTAGE (V) 500 300 200 C oss 100 50 C rss f = 1 MHz V DS = 20V I D = 2.1A C iss V GS = 0 V 50V 80V 8 6 4 2 0 0.2 0.5 1 2 5 10 20 50 0 5 VDS , DRAIN TO SOURCE VOLTAGE (V) Figure 9. Capacitance Characteristics. t d(on) 20 t off tr t d(off) tf 90% 90% V OUT D VOUT R GEN 15 t on RL V IN 10 Q g , GATE CHARGE (nC) Figure 10. Gate Charge Characteristics. VDD VGS 1.2 SD Figure 8. Body Diode Forward Voltage Variation with Current and Temperature. 1300 1000 CAPACITANCE (pF) = 0V 0.01 0.4 175 Figure 7. Breakdown Voltage Variation with Temperature. 10 0.1 V GS 5 I S , REVERSE DRAIN CURRENT (A) BV DSS , NORMALIZED DRAIN-SOURCE BREAKDOWN VOLTAGE (V) Typical Electrical Characteristics (continued) 10% 10% INVERTED DUT G 90% S V IN 50% 50% 10% PULSE WIDTH Figure 11. Switching Test Circuit. Figure 12. Switching Waveforms. NDT410EL Rev. B1 Typical Electrical and Thermal Characteristics 12 3.5 10 STEADY-STATE POWER DISSIPATION (W) T J = -55°C 25°C 8 125°C 6 4 2 g FS , TRANSCONDUCTANCE (SIEMENS) VDS = 10V 0 0 2 I D 4 6 , DRAIN CURRENT (A) 8 10 2.5 2 1.5 1b 1c 1 4.5"x5" FR-4 Board o TA = 2 5 C Still Air 0.5 0 Figure 13. Transconductance Variation with Drain Current and Temperature. 0.2 0.4 0.6 0.8 2oz COPPER MOUNTING PAD AREA (in 2 ) 1 Figure 14. SOT-223 Maximum Steady- State Power Dissipation versus Copper Mounting Pad Area. 3 20 10 10 2.5 I D , DRAIN CURRENT (A) I D , STEADY-STATE DRAIN CURRENT (A) 1a 3 1a 2 1.5 1b 1c 1 4.5"x5" FR-4 Board TA = 2 5 o C 0.5 5 S RD 2 N) Li m 10 1m 10 1 0.5 VGS = 5V SINGLE PULSE T C = 25°C 0.2 Still Air (O it 10 DC m 1s 0µ µs s s s s VG S = 5 V 0.1 0.1 0 0 0.2 0.4 0.6 0.8 2oz COPPER MOUNTING PAD AREA (in2 ) 1 0.2 0.5 1 2 5 10 20 50 VDS , DRAIN-SOURCE VOLTAGE (V) 100 200 Figure 16. Maximum Safe Operating Area. Figure 15. Maximum Steady-State Drain Current versus Copper Mounting Pad Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 0.5 D = 0.5 0.2 0.2 0.1 0.1 0.05 0.05 0.02 0.02 0.01 R JA (t) = r(t) * R JA θ θ R JA = See Note 1 c θ P(pk) 0.01 t1 0.005 TJ - T =P * R (t) θJA Duty Cycle, D = t 1 / t 2 Single Pulse 0.002 0.001 0.0001 t2 0.001 0.01 0.1 1 A 10 100 300 t 1 , TIME (sec) Figure 17. Transient Thermal Response Curve. Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change depending on the circuit board design. NDT410EL Rev. B1 SOT-223 Tape and Reel Data and Package Dimensions SOT-223 Packaging Configuration: Figure 1.0 Customized Label Packaging Description: F63TNR Label Antistatic Cover Tape SOT-223 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. These reeled parts in standard option are shipped with 2,500 units per 13" or 330cm diameter reel. The reels are dark blue in color and is made of polystyrene plastic (antistatic coated). Other option comes in 500 units per 7" or 177cm diameter reel. This and some other options are further described in the Packaging Information table. These full reels are individually barcode labeled and placed inside a standard intermediate box (illustrated in figure 1.0) made of recyclable corrugated brown paper. One box contains two reels maximum. And these boxes are placed inside a barcode labeled shipping box which comes in different sizes depending on the number of parts shipped. Static Dissipative Embossed Carrier Tape F852 014 F852 014 F852 014 F852 014 SOT-223 Packaging Information Packaging Option Packaging type Qty per Reel/Tube/Bag Reel Size Box Dimension (mm) Standard (no flow code) TNR 2,500 D84Z SOT-223 Unit Orientation TNR 500 13" Dia 7" Dia 343x64x343 184x187x47 Max qty per Box 5,000 1,000 Weight per unit (gm) 0.1246 0.1246 Weight per Reel (kg) 0.7250 0.1532 343mm x 342mm x 64mm Intermediate box for Standard F63TNR Label Note/Comments F63TNR Label F63TNR Label sample 184mm x 184mm x 47mm Pizza Box for D84Z Option SOT-223 Tape Leader and Trailer Configuration: Figure 2.0 LOT: CBVK741B019 QTY: 3000 FSID: PN2222A SPEC: D/C1: D9842 D/C2: QTY1: QTY2: SPEC REV: CPN: N/F: F (F63TNR)3 Carrier Tape Cover Tape Components Trailer Tape 300mm minimum or 38 empty pockets Leader Tape 500mm minimum or 62 empty pockets September 1999, Rev. B SOT-223 Tape and Reel Data and Package Dimensions, continued SOT-223 Embossed Carrier Tape Configuration: Figure 3.0 P0 D0 T E1 F K0 Wc W E2 B0 Tc A0 D1 P1 User Direction of Feed Dimensions are in millimeter Pkg type SOT-223 (12mm) A0 6.83 +/-0.10 B0 7.42 +/-0.10 W 12.0 +/-0.3 D0 D1 1.55 +/-0.05 1.50 +/-0.10 E1 E2 1.75 +/-0.10 F 10.25 min P1 5.50 +/-0.05 P0 8.0 +/-0.1 4.0 +/-0.1 K0 1.88 +/-0.10 Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481 rotational and lateral movement requirements (see sketches A, B, and C). T Wc 0.292 +/0.0130 9.5 +/-0.025 0.06 +/-0.02 0.5mm maximum 20 deg maximum Typical component cavity center line B0 Tc 0.5mm maximum 20 deg maximum component rotation Typical component center line Sketch A (Side or Front Sectional View) A0 Component Rotation Sketch C (Top View) Component lateral movement Sketch B (Top View) SOT-223 Reel Configuration: Figure 4.0 Component Rotation W1 Measured at Hub Dim A Max Dim A max See detail AA Dim N 7" Diameter Option B Min Dim C See detail AA W3 13" Diameter Option Dim D min W2 max Measured at Hub DETAIL AA Dimensions are in inches and millimeters Tape Size Reel Option Dim A Dim B 0.059 1.5 512 +0.020/-0.008 13 +0.5/-0.2 0.795 20.2 5.906 150 0.488 +0.078/-0.000 12.4 +2/0 0.724 18.4 0.469 – 0.606 11.9 – 15.4 0.059 1.5 512 +0.020/-0.008 13 +0.5/-0.2 0.795 20.2 7.00 178 0.488 +0.078/-0.000 12.4 +2/0 0.724 18.4 0.469 – 0.606 11.9 – 15.4 12mm 7" Dia 7.00 177.8 12mm 13" Dia 13.00 330 Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL) July 1999, Rev. B SOT-223 Tape and Reel Data and Package Dimensions, continued SOT-223 (FS PKG Code 47) 1:1 Scale 1:1 on letter size paper Part Weight per unit (gram): 0.1246 September 1999, Rev. C TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ISOPLANAR™ MICROWIRE™ POP™ PowerTrench™ QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 ACEx™ CoolFET™ CROSSVOLT™ E2CMOSTM FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.