PHILIPS BU4523DW

Philips Semiconductors
Objective specification
Silicon Diffused Power Transistor
BU4523DW
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope
with an integrated damper diode intended for use in horizontal deflection circuits of colour television receivers and
p.c monitors. Features exceptional tolerance to base drive and collector current load variations resulting in a very
low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VCESM
VCEO
IC
ICM
Ptot
VCEsat
ICsat
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current.
VBE = 0 V
VF
tf
Diode forward voltage
Fall time
8
6.5
0.3
t.b.f
1500
800
11
29
125
3.0
2.2
0.4
t.b.f
V
V
A
A
W
V
A
A
V
µs
µs
PINNING - SOT429
PIN
PIN CONFIGURATION
SYMBOL
DESCRIPTION
1
base
2
collector
3
emitter
tab
Ths ≤ 25 ˚C
IC = 8 A; IB = 2 A
f = 16 kHz
f = 70 kHz
IF = 8.0 A
ICsat = 8 A; f = 16 kHz
f = 70 kHz
collector
c
b
Rbe
1
2
e
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
IB
IBM
-IBM
Ptot
Tstg
Tj
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current peak value 1
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
Ths ≤ 25 ˚C
MIN.
MAX.
UNIT
-55
-
1500
800
11
29
7
10
7
125
150
150
V
V
A
A
A
A
A
W
˚C
˚C
1 Turn-off current.
July 1998
1
Rev 1.000
Philips Semiconductors
Objective specification
Silicon Diffused Power Transistor
BU4523DW
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
Rth j-mb
Junction to mounting base
with heatsink compound
Rth j-a
Junction to ambient
in free air
TYP.
MAX.
UNIT
-
1
K/W
45
-
K/W
MIN.
TYP.
MAX.
UNIT
-
-
1.0
2.0
mA
mA
7.5
800
12.5
46
-
-
V
Ω
V
0.85
4.2
-
0.95
t.b.f
5.8
-
3.0
1.1
7.3
2.2
V
V
TYP.
MAX.
UNIT
4.5
0.30
5.5
0.40
µs
µs
t.b.f
t.b.f
t.b.f
t.b.f
µs
µs
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2
ICES
ICES
Collector cut-off current
BVEBO
Rbe
VCEOsust
Emitter-base breakdown voltage
Base-emitter resistance
Collector-emitter sustaining voltage
VCEsat
VBEsat
hFE
hFE
VF
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
Diode forward voltage
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax;
Tj = 125 ˚C
IB = 600 mA
VEB = 7.5 V
IB = 0 A; IC = 100 mA;
L = 25 mH
IC = 8 A; IB = 2 A
IC = 8 A; IB = 2 A
IC = 1 A; VCE = 5 V
IC = 8 A; VCE = 5 V
IF = 8.0 A
V
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL
ts
tf
PARAMETER
CONDITIONS
Switching times (16 kHz line
deflection circuit)
ICsat = 8.0 A;IB1 = 1.6 A
(IB2 = -4.0 A)
Turn-off storage time
Turn-off fall time
Switching times (70 kHz line
deflection circuit)
ts
tf
ICsat = t.b.f
Turn-off storage time
Turn-off fall time
2 Measured with half sine-wave voltage (curve tracer).
July 1998
2
Rev 1.000
Philips Semiconductors
Objective specification
Silicon Diffused Power Transistor
BU4523DW
MECHANICAL DATA
Dimensions in mm
5.3 max
16 max
1.8
Net Mass: 5 g
5.3
o 3.5
max
7.3
3.5
21
max
15.5
max
seating
plane
2.5
15.5
min
4.0
max
1
2
3
0.9 max
2.2 max
1.1
3.2 max
5.45
0.4 M
5.45
Fig.1. SOT429; pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for SOT429 envelope.
2. Epoxy meets UL94 V0 at 1/8".
July 1998
3
Rev 1.000
Philips Semiconductors
Objective specification
Silicon Diffused Power Transistor
BU4523DW
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
July 1998
4
Rev 1.000