Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4525AW GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM VCEO IC ICM Ptot VCEsat ICsat Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current VBE = 0 V tf Fall time 9.0 7.0 0.4 0.15 1500 800 14 30 125 3.0 0.55 - V V A A W V A A µs µs PINNING - SOT429 PIN PIN CONFIGURATION SYMBOL DESCRIPTION 1 base 2 collector 3 emitter tab Ths ≤ 25 ˚C IC = 9.0 A; IB = 2.25 A f = 16 kHz f = 70 kHz ICsat = 9.0 A;f = 16 kHz ICsat = 7.0 A;f = 70 kHz collector c b 1 2 e 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS VCESM VCEO IC ICM IB IBM -IBM Ptot Tstg Tj Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature VBE = 0 V Ths ≤ 25 ˚C MIN. MAX. UNIT -55 - 1500 800 14 30 8 12 7 125 150 150 V V A A A A A W ˚C ˚C TYP. MAX. UNIT - 1 K/W 45 - K/W THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS Rth j-hs Junction to heatsink with heatsink compound Rth j-a Junction to ambient in free air 1 Turn-off current. May 1998 1 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4525AW STATIC CHARACTERISTICS Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS ICES ICES Collector cut-off current 2 IEBO BVEBO VCEOsust Emitter cut-off current Emitter-base breakdown voltage Collector-emitter sustaining voltage VCEsat VBEsat hFE hFE Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 ˚C VEB = 6.0 V; IC = 0 A IB = 1 mA IB = 0 A; IC = 100 mA; L = 25 mH IC = 9.0 A;IB = 2.25A IC = 9.0 A;IB = 2.25A IC = 1.0 A; VCE = 5 V IC = 9.0 A; VCE = 5 V MIN. TYP. MAX. UNIT - - 1.0 2.0 mA mA 7.5 800 13.5 - 100 - µA V V 0.96 4.2 1.01 12 5.8 3.0 1.06 7.6 V V DYNAMIC CHARACTERISTICS Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Cc Collector capacitance IE = 0 A; VCB = 10 V; f = 1 MHz 145 - pF Switching times (16 kHz line deflection circuit) ICsat = 9.0 A;IB1 = 1.8 A (IB2 = -4.5 A) 3.7 0.4 4.5 0.55 µs µs 2 0.15 - µs µs ts tf Turn-off storage time Turn-off fall time Switching times (70 kHz line deflection circuit) ICsat = 7.0 A;IB1 = 1.4 A (IB2 = -4.5 A) Turn-off storage time Turn-off fall time ts tf IC / mA + 50v 100-200R 250 Horizontal 200 Oscilloscope 100 Vertical 100R 1R 0 6V VCE / V 30-60 Hz min VCEOsust Fig.1. Test circuit for VCEOsust. Fig.2. Oscilloscope display for VCEOsust. 2 Measured with half sine-wave voltage (curve tracer). May 1998 2 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor ICsat TRANSISTOR IC BU4525AW hFE BU4525 1V 100 DIODE VCE = 1V Tmb = 25 C Tmb = 85 C t IB1 IB 10 t 20us 26us IB2 64us VCE 1 0.01 t 0.1 1 10 100 IC / A Fig.3. Switching times waveforms (16 kHz). Fig.6. High and low DC current gain. ICsat hFE BU4525 5V 100 90 % VCE = 5V Tmb = 25 C Tmb = 85 C IC 10 % tf 10 t ts IB IB1 t 1 0.01 - IB2 0.1 1 10 100 IC / A Fig.4. Switching times definitions. Fig.7. High and low DC current gain. + 150 v nominal adjust for ICsat VCEsat / V BU4525AF/X/W 10 Ths = 25 C Ths = 85 C Lc IBend LB 1 T.U.T. IC/IB = 5 0.1 Cfb -VBB 0.01 0.1 Fig.5. Switching times test circuit. May 1998 1 10 IC / A 100 Fig.8. Typical collector-emitter saturation voltage. 3 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor VBEsat / V BU4525AW BU4525AF/X/W 1.2 10 bu4525aw Zth K/W Ths = 25 C Ths = 85 C 1.1 1 IC = 9 A 1 0.5 0.2 0.1 0.1 0.9 0.05 0.02 0.8 IC = 7 A PD 0.01 tp D= tp T 0.7 t T 0.6 0.001 1.0E-07 0 1 2 3 IB / A 4 10 ICsat = 9 A Ths = 85 C Freq = 16 kHz Ic(sat) (A) 6 4 4 2 2 0 1E+01 8 ts 6 1E-01 Fig.12. Transient thermal impedance. ts/tf / us 8 1E-03 t/s Fig.9. Typical base-emitter saturation voltage. 10 1E-05 tf 0 0 1 2 IB / A 3 4 Fig.10. Typical collector storage and fall time. IC =9 A; Tj = 85˚C; f = 16kHz 20 40 60 Frequency (kHz) 80 100 Fig.13. ICsat during normal running vs. frequency of operation for optimum performance Normalised Power Derating PD% 120 0 with heatsink compound 110 100 90 80 70 60 50 40 30 20 10 0 0 20 40 60 80 Ths / C 100 120 140 Fig.11. Normalised power dissipation. PD% = 100⋅PD/PD 25˚C May 1998 4 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4525AW MECHANICAL DATA Dimensions in mm 5.3 max 16 max 1.8 Net Mass: 5 g 5.3 o 3.5 max 7.3 3.5 21 max 15.5 max seating plane 2.5 15.5 min 4.0 max 1 2 3 0.9 max 2.2 max 1.1 3.2 max 5.45 0.4 M 5.45 Fig.14. SOT429; pin 2 connected to mounting base. Notes 1. Refer to mounting instructions for SOT429 envelope. 2. Epoxy meets UL94 V0 at 1/8". May 1998 5 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4525AW DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. May 1998 6 Rev 1.000