PHILIPS BU4530AL

Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4530AL
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope
intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features exceptional
tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VCESM
VCEO
IC
ICM
Ptot
VCEsat
ICsat
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
VBE = 0
tf
Fall time.
9
8
0.20
0.12
1500
800
16
40
125
3.0
0.26
-
V
V
A
A
W
V
A
A
µs
µs
PINNING - SOT430
PIN
Tmb ≤ 25 ˚C
IC = 10 A; IB = 2.22A
f = 32 kHz
f = 90 kHz
ICsat = 9.0 A; f = 32 kHz
ICsat = 8.0 A; f = 90 kHz
PIN CONFIGURATION
SYMBOL
DESCRIPTION
1
base
2
collector
3
emitter
heat collector
sink
c
b
1
2
e
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
IB
IBM
Ptot
Tstg
Tj
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
April 1999
Tmb ≤ 25 ˚C
1
MIN.
MAX.
UNIT
-55
-
1500
800
16
40
10
15
125
150
150
V
V
A
A
A
A
W
˚C
˚C
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4530AL
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
Rth j-mb
Junction to mounting base
-
Rth j-a
Junction to ambient
in free air
TYP.
MAX.
UNIT
-
1.0
K/W
35
-
K/W
MIN.
TYP.
MAX.
UNIT
-
-
1.0
2.0
mA
mA
7.5
800
12.8
-
V
V
0.83
4.8
0.92
12
6.6
3.0
1.01
8.5
V
V
TYP.
MAX.
UNIT
3.0
0.20
4.0
0.26
µs
µs
2
0.12
-
µs
µs
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL
ICES
ICES
PARAMETER
Collector cut-off current
BVEBO
VCEOsust
VCEsat
VBEsat
hFE
hFE
CONDITIONS
1
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax;
Tj = 125 ˚C
Base-emitter breakdown voltage
IB = 1 mA
Collector-emitter breakdown voltage IB = 0 A;IC = 100 mA;
L = 25 mH
Collector-emitter saturation voltage IC = 10 A; IB = 2.22 A
Base-emitter saturation voltage
IC = 10 A; IB = 2.22 A
DC current gain
IC = 1 A; VCE = 5 V
IC = 10 A; VCE = 5 V
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
ICsat = 9.0 A; IB1 = 1.8 A; (IB2 = -4.5 A)
ts
tf
Switching times (32 kHz line
deflection dynamic test circuit).
Turn-off storage time
Turn-off fall time
ICsat = 8 A;IB1 = 1.6 A; (IB2 = -4.0 A)
ts
tf
Switching times (90 kHz line
deflection dynamic test circuit).
Turn-off storage time
Turn-off fall time
IC / mA
+ 50v
100-200R
250
Horizontal
200
Oscilloscope
100
Vertical
100R
1R
0
6V
VCE / V
30-60 Hz
min
VCEOsust
Fig.1. Test circuit for VCEOsust.
Fig.2. Oscilloscope display for VCEOsust.
1 Measured with half sine-wave voltage (curve tracer).
April 1999
2
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
100 hFE
ICsat
TRANSISTOR
IC
BU4530AL
VCE = 1V
DIODE
- - -Tj = 85 C
Tj = 25 C
t
IBend
IB
10
t
10us
13us
32us
VCE
1
0.01
t
Fig.3. Switching times waveforms.
0.1
1
10
100
IC / A
Fig.6. High and low DC current gain.
ICsat
hFE
100
90 %
VCE = 5V
- - -Tj = 85 C
Tj = 25 C
IC
10 %
tf
10
t
ts
IB
IB1
t
1
0.01
- IB2
Fig.4. Switching times definitions.
0.1
1
10
100
IC / A
Fig.7. High and low DC current gain.
1 VBEsat /V
+ 150 v nominal
adjust for ICsat
- - -Ths = 85 C
Ths = 25 C
IC = 10 A
0.9
Lc
IC = 8 A
0.8
IBend
LB
T.U.T.
Cfb
0.7
-VBB
0.6
Fig.5. Switching times test circuit.
April 1999
0
1
2
3
IB / A
4
Fig.8. Typical base-emitter saturation voltage.
3
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4530AL
VCEsat / V
10
10
Zth / (K/W)
BU4530AL
- - -Tj = 85 C
Tj = 25 C
1
1
0.5
0.1
0.2
0.1
0.05
IC / IB = 5
0.02
0.1
P
D
0.01
0.01
0.1
1
10
Fig.9. Typical collector-emitter saturation voltage.
VCEsat = f (IC); parameter IC/IB
10
1E-05
1E-03
t/s
1E-01
1E+01
Fig.12. Transient thermal impedance.
ts/tf / us
10
8
8
6
6
4
4
Ic(sat) (A)
2
2
0
t
T
0.001
1E-07
100
IC / A
t
D= p
T
tp
0
0
0.5
1
1.5
2
2.5
IB / A
3
Fig.10. Typical collector storage and fall time.
IC =9 A; Tj = 85˚C; f = 32kHz
120
0
20
40
60
frequency (kHz)
80
100
Fig.13. ICsat during normal running vs. frequency of
operation for optimum performance
Normalised Power Derating
PD%
with heatsink compound
110
100
90
80
70
60
50
40
30
20
10
0
0
20
40
60
80
Ths / C
100
120
140
Fig.11. Normalised power dissipation.
PD% = 100⋅PD/PD 25˚C
April 1999
4
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4530AL
MECHANICAL DATA
Dimensions in mm
5.3 max
20.5 max
Net Mass: 9 g
3.0
3.1
3.53
4.06
6.17
3.0
4.06
25.5
26.5
2.99
2.09
22.53
22.63
8.53
1.92
3.13
3.23
seating
plane
2.39
2.45
19.5
min
18.16
3.5 max
0.8
1.35
0.4 M
1.0 max
3.0 max
5.45 5.45
Fig.14. SOT430; pin 2 connected to mounting base.
April 1999
5
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4530AL
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1999
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
April 1999
6
Rev 1.100