Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4530AL GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM VCEO IC ICM Ptot VCEsat ICsat Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current VBE = 0 tf Fall time. 9 8 0.20 0.12 1500 800 16 40 125 3.0 0.26 - V V A A W V A A µs µs PINNING - SOT430 PIN Tmb ≤ 25 ˚C IC = 10 A; IB = 2.22A f = 32 kHz f = 90 kHz ICsat = 9.0 A; f = 32 kHz ICsat = 8.0 A; f = 90 kHz PIN CONFIGURATION SYMBOL DESCRIPTION 1 base 2 collector 3 emitter heat collector sink c b 1 2 e 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS VCESM VCEO IC ICM IB IBM Ptot Tstg Tj Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature VBE = 0 V April 1999 Tmb ≤ 25 ˚C 1 MIN. MAX. UNIT -55 - 1500 800 16 40 10 15 125 150 150 V V A A A A W ˚C ˚C Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4530AL THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS Rth j-mb Junction to mounting base - Rth j-a Junction to ambient in free air TYP. MAX. UNIT - 1.0 K/W 35 - K/W MIN. TYP. MAX. UNIT - - 1.0 2.0 mA mA 7.5 800 12.8 - V V 0.83 4.8 0.92 12 6.6 3.0 1.01 8.5 V V TYP. MAX. UNIT 3.0 0.20 4.0 0.26 µs µs 2 0.12 - µs µs STATIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL ICES ICES PARAMETER Collector cut-off current BVEBO VCEOsust VCEsat VBEsat hFE hFE CONDITIONS 1 VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 ˚C Base-emitter breakdown voltage IB = 1 mA Collector-emitter breakdown voltage IB = 0 A;IC = 100 mA; L = 25 mH Collector-emitter saturation voltage IC = 10 A; IB = 2.22 A Base-emitter saturation voltage IC = 10 A; IB = 2.22 A DC current gain IC = 1 A; VCE = 5 V IC = 10 A; VCE = 5 V DYNAMIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS ICsat = 9.0 A; IB1 = 1.8 A; (IB2 = -4.5 A) ts tf Switching times (32 kHz line deflection dynamic test circuit). Turn-off storage time Turn-off fall time ICsat = 8 A;IB1 = 1.6 A; (IB2 = -4.0 A) ts tf Switching times (90 kHz line deflection dynamic test circuit). Turn-off storage time Turn-off fall time IC / mA + 50v 100-200R 250 Horizontal 200 Oscilloscope 100 Vertical 100R 1R 0 6V VCE / V 30-60 Hz min VCEOsust Fig.1. Test circuit for VCEOsust. Fig.2. Oscilloscope display for VCEOsust. 1 Measured with half sine-wave voltage (curve tracer). April 1999 2 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor 100 hFE ICsat TRANSISTOR IC BU4530AL VCE = 1V DIODE - - -Tj = 85 C Tj = 25 C t IBend IB 10 t 10us 13us 32us VCE 1 0.01 t Fig.3. Switching times waveforms. 0.1 1 10 100 IC / A Fig.6. High and low DC current gain. ICsat hFE 100 90 % VCE = 5V - - -Tj = 85 C Tj = 25 C IC 10 % tf 10 t ts IB IB1 t 1 0.01 - IB2 Fig.4. Switching times definitions. 0.1 1 10 100 IC / A Fig.7. High and low DC current gain. 1 VBEsat /V + 150 v nominal adjust for ICsat - - -Ths = 85 C Ths = 25 C IC = 10 A 0.9 Lc IC = 8 A 0.8 IBend LB T.U.T. Cfb 0.7 -VBB 0.6 Fig.5. Switching times test circuit. April 1999 0 1 2 3 IB / A 4 Fig.8. Typical base-emitter saturation voltage. 3 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4530AL VCEsat / V 10 10 Zth / (K/W) BU4530AL - - -Tj = 85 C Tj = 25 C 1 1 0.5 0.1 0.2 0.1 0.05 IC / IB = 5 0.02 0.1 P D 0.01 0.01 0.1 1 10 Fig.9. Typical collector-emitter saturation voltage. VCEsat = f (IC); parameter IC/IB 10 1E-05 1E-03 t/s 1E-01 1E+01 Fig.12. Transient thermal impedance. ts/tf / us 10 8 8 6 6 4 4 Ic(sat) (A) 2 2 0 t T 0.001 1E-07 100 IC / A t D= p T tp 0 0 0.5 1 1.5 2 2.5 IB / A 3 Fig.10. Typical collector storage and fall time. IC =9 A; Tj = 85˚C; f = 32kHz 120 0 20 40 60 frequency (kHz) 80 100 Fig.13. ICsat during normal running vs. frequency of operation for optimum performance Normalised Power Derating PD% with heatsink compound 110 100 90 80 70 60 50 40 30 20 10 0 0 20 40 60 80 Ths / C 100 120 140 Fig.11. Normalised power dissipation. PD% = 100⋅PD/PD 25˚C April 1999 4 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4530AL MECHANICAL DATA Dimensions in mm 5.3 max 20.5 max Net Mass: 9 g 3.0 3.1 3.53 4.06 6.17 3.0 4.06 25.5 26.5 2.99 2.09 22.53 22.63 8.53 1.92 3.13 3.23 seating plane 2.39 2.45 19.5 min 18.16 3.5 max 0.8 1.35 0.4 M 1.0 max 3.0 max 5.45 5.45 Fig.14. SOT430; pin 2 connected to mounting base. April 1999 5 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4530AL DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1999 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. April 1999 6 Rev 1.100