TC1301 REV.2_04/12/2004 Low Noise and Medium Power GaAs FETs FEATURES • • • • Low Noise Figure: NF = 0.8 dB Typical at 12 GHz High Associated Gain: Ga = 10 dB Typical at 12 GHz High Dynamic Range: 1 dB Compression Power P-1 = 24 dBm at 12 GHz • • Breakdown Voltage: BVDGO ≥ 9 V Lg = 0.25 µm, Wg = 600 µm All-Gold Metallization for High Reliability • 100 % DC Tested PHOTO ENLARGEMENT DESCRIPTION The TC1301 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very low noise figure, high associated gain and high dynamic range. The device can be used in circuits up to 40 GHz and suitable for low noise and medium power amplifier applications including a wide range of commercial and military applications. All devices are 100% DC tested to assure consistent quality. All bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding. ELECTRICAL SPECIFICATIONS (TA=25 °C) Symbol NF Ga P1dB GL IDSS gm VP BVDGO Rth CONDITIONS Noise Figure at VDS = 4 V, IDS = 50 mA, f = 12GHz Associated Gain at VDS = 4 V, IDS = 50 mA, f = 12GHz Output Power at 1dB Gain Compression Point , f = 12GHz VDS = 6 V, IDS = 80 mA Linear Power Gain, f = 12GHz VDS = 6 V, IDS = 80 mA Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V Transconductance at VDS = 2 V, VGS = 0 V Pinch-off Voltage at VDS = 2 V, ID = 1.2 mA Drain-Gate Breakdown Voltage at IDGO =0.3 mA Thermal Resistance MIN 9 10 9 TYP 0.8 10 MAX 1.0 UNIT dB dB 24 dBm 11 dB 180 200 -1.0* 12 22 mA mS Volts Volts °C/W * For the tight control of the pinch-off voltage range, we divide TC1301 into 3 model numbers to fit customer design requirement (1)TC1301P0710 : Vp = -0.7V to -1.0V (2)TC1301P0811 : Vp = -0.8V to -1.1V (3)TC1301P0912 : Vp = -0.9V to -1.2V If required, customer can specify the requirement in purchasing document. For special Vp requirement, please contact factory for details. TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P1/6 TC1301 REV.2_04/12/2004 ABSOLUTE MAXIMUM RATINGS (TA=25 °C) Symbol VDS VGS IDS IGS Pin PT TCH TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Gate Current TYPICAL NOISE PARAMETERS (TA=25 °C) VDS = 4 V, IDS = 50 mA Frequency NFopt Rating 7.0 V -3.0 V IDSS 2 4 6 8 10 12 14 16 18 600 µA 20 dBm 800 mW 175 °C - 65 °C to +175 °C RF Input Power, CW Continuous Dissipation Channel Temperature Storage Temperature 0.36 0.48 0.59 0.70 0.78 0.85 0.98 1.12 1.27 GA 19.7 16.6 14.3 12.7 11.7 10.9 10.4 9.8 9.0 Γopt MAG 0.88 0.74 0.62 0.55 0.50 0.49 0.50 0.51 0.54 Rn/50 ANG 15 39 64 92 120 148 174 -162 -141 0.28 0.18 0.15 0.12 0.09 0.06 0.04 0.04 0.07 CHIP DIMENSIONS 760± 12 D D D 290± 12 S G S G S G S Units: Micrometers Gate Pad: 75 x 70 Chip Thickness: 100 Drain Pad: 80 x 70 Source Pad: 75 x 80 TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P2/6 TC1301 REV.2_04/12/2004 TYPICAL SCATTERING PARAMETERS (TA=25 °C) 0.2 90 60 15 10.0 3.0 4.0 5.0 2.0 0.8 1.0 0.6 0.4 45 2. 0 0. 4 0.2 30 15 0 10.0 0 Swp Max 18 GHz 5 13 0 3. 0 4. 0 5. S11 75 0.8 Mag Max 0.1 0 12 6 0. Swp Max 18GHz 105 1.0 VDS = 4 V, IDS = 50 mA 165 0 -180 -10.0 2. 0 0. 4 15 Swp Min 2 GHz 1.0 0.8 -1 20 6 0. 45 -105 -1 35 .0 -2 60 75 -1.0 90 -0.8 -0 .6 5 13 30 15 0 -3 0 0 -6 Swp Max 18 GHz 0.01 Per Div -90 Swp Min 2GHz -75 105 0 12 Mag Max 10 S12 50 -1 5 -4 .4 -0 -165 -3 .0 -4 . -5. 0 0 2 -0. -15 0 3. 0 4. 0 5. S22 0.2 165 S11 MAG 0.8504 0.7843 0.7445 0.7206 0.7058 0.6961 0.6897 0.6853 0.6822 0.6800 0.6785 0.6776 0.6769 0.6766 0.6765 0.6766 0.6768 ANG -80.07 -103.76 -120.17 -132.00 -140.93 -147.93 -153.62 -158.39 -162.46 -166.03 -169.21 -172.07 -174.69 -177.11 -179.36 178.52 176.52 S21 MAG 9.9111 7.8038 6.3123 5.2595 4.4944 3.9201 3.4764 3.1248 2.8405 2.6065 2.4110 2.2456 2.1042 1.9821 1.8759 1.7827 1.7005 .0 -2 -1.0 Swp Min 2 GHz -0.8 .4 -0 -0 .6 -105 -1 20 0 -6 -1 35 5 -4 -90 -75 2 Per Div 2 -0. -3 0 50 -1 -10.0 S21 10.0 3.0 4.0 5.0 2.0 0.8 1.0 0.6 0.4 -15 -165 -3 .0 -4 . -5. 0 0 0 0.2 10.0 0 -180 FREQUENCY (GHz) 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 Swp Max 18GHz Swp Min 2GHz S12 ANG 129.43 115.14 105.04 97.31 91.01 85.60 80.80 76.43 72.38 68.56 64.93 61.46 58.11 54.87 51.72 48.65 45.65 MAG 0.0557 0.0659 0.0713 0.0745 0.0767 0.0785 0.0800 0.0814 0.0828 0.0843 0.0858 0.0875 0.0892 0.0910 0.0928 0.0948 0.0969 S22 ANG 48.67 38.99 33.48 30.31 28.54 27.63 27.27 27.29 27.56 28.01 28.56 29.19 29.86 30.55 31.23 31.89 32.53 MAG 0.3868 0.3487 0.3277 0.3178 0.3147 0.3159 0.3198 0.3256 0.3327 0.3406 0.3490 0.3577 0.3667 0.3756 0.3845 0.3933 0.4020 ANG -68.29 -88.15 -101.61 -111.02 -117.84 -122.98 -127.02 -130.30 -133.08 -135.50 -137.67 -139.65 -141.49 -143.23 -144.89 -146.47 -148.00 • The data does not include gate, drain and source bond wires. TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P3/6 TC1301 REV.2_04/12/2004 TYPICAL SCATTERING PARAMETERS (TA=25 °C) 75 45 15 165 10.0 3.0 4.0 5.0 2.0 0.8 1.0 0.6 60 2. 0 0.2 0.4 90 0.8 6 0. 0. 4 0.2 30 15 0 10.0 0 Swp Max 18 GHz 5 13 0 3. 0 4. 0 5. S11 0 12 Mag Max 0.09 Swp Max 18GHz 105 1.0 VDS = 6 V, IDS = 80 mA 0 -180 -15 -10.0 -105 2. 0 1.0 0.8 -1 35 -1 20 6 0. Swp Min 2 GHz Swp Max 18GHz 0 3. 0 4. 0 5. S22 0.2 15 10.0 3.0 4.0 5.0 2.0 0.8 1.0 0 0 0.6 10.0 165 0.2 60 75 45 0. 4 5 13 30 0.4 .0 -2 -0.8 -0 .6 -1.0 90 Swp Max 18 GHz 15 0 -3 0 0 -6 0.03 Per Div -90 Swp Min 2GHz -75 105 0 12 Mag Max 15 S12 50 -1 5 -4 .4 -0 -165 -3 .0 -4 . -5. 0 0 2 -0. -180 -15 -3 0 ANG -83.76 -107.47 -123.54 -134.97 -143.52 -150.20 -155.61 -160.12 -163.98 -167.36 -170.36 -173.08 -175.55 -177.85 -179.98 178.01 176.11 S21 MAG 10.1160 7.8891 6.3492 5.2766 4.5034 3.9260 3.4814 3.1301 2.8465 2.6134 2.4188 2.2542 2.1134 1.9919 1.8860 1.7930 1.7109 ANG 128.27 114.27 104.51 97.09 91.05 85.88 81.28 77.07 73.16 69.46 65.92 62.52 59.23 56.03 52.90 49.83 46.82 S12 MAG 0.0446 0.0523 0.0564 0.0590 0.0609 0.0626 0.0641 0.0655 0.0671 0.0686 0.0703 0.0720 0.0738 0.0756 0.0775 0.0795 0.0816 .0 -2 -1.0 -0.8 Swp Min 2 GHz S11 MAG 0.8511 0.7902 0.7549 0.7342 0.7214 0.7133 0.7078 0.7041 0.7015 0.6998 0.6986 0.6978 0.6973 0.6971 0.6971 0.6973 0.6976 -0 .6 -105 -1 20 0 -6 -1 35 5 -4 -90 FREQUENCY (GHz) 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 -75 5 Per Div .4 -0 -3 .0 -4 . -5. 0 0 2 -0. S21 50 -1 -10.0 -165 Swp Min 2GHz S22 ANG 48.15 39.06 34.17 31.58 30.31 29.84 29.86 30.19 30.73 31.38 32.10 32.85 33.60 34.33 35.03 35.70 36.32 MAG 0.3787 0.3349 0.3133 0.3059 0.3072 0.3138 0.3237 0.3356 0.3485 0.3620 0.3757 0.3893 0.4027 0.4157 0.4283 0.4404 0.4520 ANG -56.54 -72.15 -82.94 -90.91 -97.18 -102.35 -106.81 -110.76 -114.34 -117.64 -120.71 -123.59 -126.31 -128.89 -131.35 -133.69 -135.92 • The data does not include gate, drain and source bond wires. TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P4/6 TC1301 REV.2_04/12/2004 SMALL SIGNAL MODEL, VDS = 4 V, IDS = 50 mA SCHEMATIC PARAMETERS Parameters Lg Cgd Rg Rd Parameters Lg Ld 0.057 nH Rg Gm Cgs Ri Cds 2.08 Ohm Ls Cgs Rds 0.959 pF Ri T Cds 5.78 Ohm Rds Cgd Gm Rs Rs T 1.66 Ohm 0.019 nH 0.167 pF 93.2 Ohm 0.074 pF Rd 1.358 Ohm 284.0 mS Ld 0.038 nH 5.54 psec Ls SMALL SIGNAL MODEL, VDS = 6 V, IDS = 80 mA SCHEMATIC PARAMETERS Parameters Lg Cgd Rg Gm Cgs Ri Rd Cds T Rds Ld Lg 0.056 nH Rg 1.954 Ohm Ls Ls Rs Cgs 1.33 pF Ri 5.58 Ohm Rds Cgd Rs Parameters Cds 0.052 pF Rd Gm 315 mS Ld T 5.63 psec 1.808 Ohm 0.016 nH 0.185 pF 90.1 Ohm 1.422 Ohm 0.036 nH TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P5/6 TC1301 REV.2_04/12/2004 LARGE SIGNAL MODEL, VDS = 6 V, IDS =80 mA TOM2 MODEL PARAMETERS Parameters VTO SCHEMATIC Lg Rg Cgd Rd Rid Cgs Rdb Id Cds Ris Cbs Ld Ls -0.43283 V 0.5 V ALPHA 9.54 CGD BETA 0.49 CGS 6.018 pF GAMMA 0.0416 CDS 0.1599 pF DELTA 0.3091 RIS 5.755 Ohm 0.84 RID 0.0554 pF NG 0.1 VBR 0.001 Ohm 9V ND 0.01 RDB 94.333 Ohm CBS 0.0463 pF Q TAU Rs Parameters VMAX 5.558 ps 25 °C RG 2.0833 Ohm RD 1.358 Ohm LS 0.01893 nH RS 1.662 Ohm LG 0.0576 nH IS 1E-11 mA LD 0.038 nH N 1 AFAC 1 VBI 1V NFING 1 VDELTA TNOM 0.2 V CHIP HANDLING DIE ATTACHMENT: Conductive epoxy or eutectic die attach is recommended. Eutectic die attach can be accomplished with Au-Sn (80%Au-20%Sn) perform at stage temperature: 290°C ± 5°C; Handling Tool: Tweezers; Time: less than 1min. WIRE BONDING: The recommended wire bond method is thermocompression bonding with 0.7 to 1.0 mil (0.018 to 0.025 mm) gold wire. Stage temperature: 220°C to 250°C; Bond Tip Temperature: 150°C; Bond Force: 20 to 30 gms depending on size of wire and Bond Tip Temperature. HANDLING PRECAUTIONS: The user must operate in a clean, dry environment. Care should be exercised during handling avoid damage to the devices. Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. The static discharge must be less than 300V. TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P6/6