ETC TC1301

TC1301
REV.2_04/12/2004
Low Noise and Medium Power GaAs FETs
FEATURES
•
•
•
•
Low Noise Figure:
NF = 0.8 dB Typical at 12 GHz
High Associated Gain:
Ga = 10 dB Typical at 12 GHz
High Dynamic Range:
1 dB Compression Power P-1 = 24 dBm at 12 GHz
•
•
Breakdown Voltage:
BVDGO ≥ 9 V
Lg = 0.25 µm, Wg = 600 µm
All-Gold Metallization for High Reliability
•
100 % DC Tested
PHOTO ENLARGEMENT
DESCRIPTION
The TC1301 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very
low noise figure, high associated gain and high dynamic range. The device can be used in circuits up to 40
GHz and suitable for low noise and medium power amplifier applications including a wide range of
commercial and military applications. All devices are 100% DC tested to assure consistent quality. All bond
pads are gold plated for either thermo-compression or thermo-sonic wire bonding.
ELECTRICAL SPECIFICATIONS (TA=25 °C)
Symbol
NF
Ga
P1dB
GL
IDSS
gm
VP
BVDGO
Rth
CONDITIONS
Noise Figure at VDS = 4 V, IDS = 50 mA, f = 12GHz
Associated Gain at VDS = 4 V, IDS = 50 mA, f = 12GHz
Output Power at 1dB Gain Compression Point , f = 12GHz
VDS = 6 V, IDS = 80 mA
Linear Power Gain, f = 12GHz
VDS = 6 V, IDS = 80 mA
Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V
Transconductance at VDS = 2 V, VGS = 0 V
Pinch-off Voltage at VDS = 2 V, ID = 1.2 mA
Drain-Gate Breakdown Voltage at IDGO =0.3 mA
Thermal Resistance
MIN
9
10
9
TYP
0.8
10
MAX
1.0
UNIT
dB
dB
24
dBm
11
dB
180
200
-1.0*
12
22
mA
mS
Volts
Volts
°C/W
* For the tight control of the pinch-off voltage range, we divide TC1301 into 3 model numbers to fit customer design requirement
(1)TC1301P0710 : Vp = -0.7V to -1.0V (2)TC1301P0811 : Vp = -0.8V to -1.1V (3)TC1301P0912 : Vp = -0.9V to -1.2V
If required, customer can specify the requirement in purchasing document. For special Vp requirement, please contact factory for
details.
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
P1/6
TC1301
REV.2_04/12/2004
ABSOLUTE MAXIMUM RATINGS (TA=25 °C)
Symbol
VDS
VGS
IDS
IGS
Pin
PT
TCH
TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Gate Current
TYPICAL NOISE PARAMETERS (TA=25 °C)
VDS = 4 V, IDS = 50 mA
Frequency
NFopt
Rating
7.0 V
-3.0 V
IDSS
2
4
6
8
10
12
14
16
18
600 µA
20 dBm
800 mW
175 °C
- 65 °C to +175 °C
RF Input Power, CW
Continuous Dissipation
Channel Temperature
Storage Temperature
0.36
0.48
0.59
0.70
0.78
0.85
0.98
1.12
1.27
GA
19.7
16.6
14.3
12.7
11.7
10.9
10.4
9.8
9.0
Γopt
MAG
0.88
0.74
0.62
0.55
0.50
0.49
0.50
0.51
0.54
Rn/50
ANG
15
39
64
92
120
148
174
-162
-141
0.28
0.18
0.15
0.12
0.09
0.06
0.04
0.04
0.07
CHIP DIMENSIONS
760± 12
D
D
D
290± 12
S
G
S
G
S
G
S
Units: Micrometers
Gate Pad: 75 x 70
Chip Thickness: 100
Drain Pad: 80 x 70
Source Pad: 75 x 80
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
P2/6
TC1301
REV.2_04/12/2004
TYPICAL SCATTERING PARAMETERS (TA=25 °C)
0.2
90
60
15
10.0
3.0
4.0
5.0
2.0
0.8
1.0
0.6
0.4
45
2.
0
0.
4
0.2
30
15
0
10.0
0
Swp Max
18 GHz
5
13
0
3.
0
4. 0
5.
S11
75
0.8
Mag Max
0.1
0
12
6
0.
Swp Max
18GHz
105
1.0
VDS = 4 V, IDS = 50 mA
165
0
-180
-10.0
2.
0
0.
4
15
Swp Min
2 GHz
1.0
0.8
-1
20
6
0.
45
-105
-1
35
.0
-2
60
75
-1.0
90
-0.8
-0
.6
5
13
30
15
0
-3
0
0
-6
Swp Max
18 GHz
0.01
Per Div
-90
Swp Min
2GHz
-75
105
0
12
Mag Max
10
S12
50
-1
5
-4
.4
-0
-165
-3
.0
-4
.
-5. 0
0
2
-0.
-15
0
3.
0
4. 0
5.
S22
0.2
165
S11
MAG
0.8504
0.7843
0.7445
0.7206
0.7058
0.6961
0.6897
0.6853
0.6822
0.6800
0.6785
0.6776
0.6769
0.6766
0.6765
0.6766
0.6768
ANG
-80.07
-103.76
-120.17
-132.00
-140.93
-147.93
-153.62
-158.39
-162.46
-166.03
-169.21
-172.07
-174.69
-177.11
-179.36
178.52
176.52
S21
MAG
9.9111
7.8038
6.3123
5.2595
4.4944
3.9201
3.4764
3.1248
2.8405
2.6065
2.4110
2.2456
2.1042
1.9821
1.8759
1.7827
1.7005
.0
-2
-1.0
Swp Min
2 GHz
-0.8
.4
-0
-0
.6
-105
-1
20
0
-6
-1
35
5
-4
-90
-75
2
Per Div
2
-0.
-3
0
50
-1
-10.0
S21
10.0
3.0
4.0
5.0
2.0
0.8
1.0
0.6
0.4
-15
-165
-3
.0
-4
.
-5. 0
0
0
0.2
10.0
0
-180
FREQUENCY
(GHz)
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
Swp Max
18GHz
Swp Min
2GHz
S12
ANG
129.43
115.14
105.04
97.31
91.01
85.60
80.80
76.43
72.38
68.56
64.93
61.46
58.11
54.87
51.72
48.65
45.65
MAG
0.0557
0.0659
0.0713
0.0745
0.0767
0.0785
0.0800
0.0814
0.0828
0.0843
0.0858
0.0875
0.0892
0.0910
0.0928
0.0948
0.0969
S22
ANG
48.67
38.99
33.48
30.31
28.54
27.63
27.27
27.29
27.56
28.01
28.56
29.19
29.86
30.55
31.23
31.89
32.53
MAG
0.3868
0.3487
0.3277
0.3178
0.3147
0.3159
0.3198
0.3256
0.3327
0.3406
0.3490
0.3577
0.3667
0.3756
0.3845
0.3933
0.4020
ANG
-68.29
-88.15
-101.61
-111.02
-117.84
-122.98
-127.02
-130.30
-133.08
-135.50
-137.67
-139.65
-141.49
-143.23
-144.89
-146.47
-148.00
• The data does not include gate, drain and source bond wires.
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
P3/6
TC1301
REV.2_04/12/2004
TYPICAL SCATTERING PARAMETERS (TA=25 °C)
75
45
15
165
10.0
3.0
4.0
5.0
2.0
0.8
1.0
0.6
60
2.
0
0.2
0.4
90
0.8
6
0.
0.
4
0.2
30
15
0
10.0
0
Swp Max
18 GHz
5
13
0
3.
0
4. 0
5.
S11
0
12
Mag Max
0.09
Swp Max
18GHz
105
1.0
VDS = 6 V, IDS = 80 mA
0
-180
-15
-10.0
-105
2.
0
1.0
0.8
-1
35
-1
20
6
0.
Swp Min
2 GHz
Swp Max
18GHz
0
3.
0
4. 0
5.
S22
0.2
15
10.0
3.0
4.0
5.0
2.0
0.8
1.0
0
0
0.6
10.0
165
0.2
60
75
45
0.
4
5
13
30
0.4
.0
-2
-0.8
-0
.6
-1.0
90
Swp Max
18 GHz
15
0
-3
0
0
-6
0.03
Per Div
-90
Swp Min
2GHz
-75
105
0
12
Mag Max
15
S12
50
-1
5
-4
.4
-0
-165
-3
.0
-4
.
-5. 0
0
2
-0.
-180
-15
-3
0
ANG
-83.76
-107.47
-123.54
-134.97
-143.52
-150.20
-155.61
-160.12
-163.98
-167.36
-170.36
-173.08
-175.55
-177.85
-179.98
178.01
176.11
S21
MAG
10.1160
7.8891
6.3492
5.2766
4.5034
3.9260
3.4814
3.1301
2.8465
2.6134
2.4188
2.2542
2.1134
1.9919
1.8860
1.7930
1.7109
ANG
128.27
114.27
104.51
97.09
91.05
85.88
81.28
77.07
73.16
69.46
65.92
62.52
59.23
56.03
52.90
49.83
46.82
S12
MAG
0.0446
0.0523
0.0564
0.0590
0.0609
0.0626
0.0641
0.0655
0.0671
0.0686
0.0703
0.0720
0.0738
0.0756
0.0775
0.0795
0.0816
.0
-2
-1.0
-0.8
Swp Min
2 GHz
S11
MAG
0.8511
0.7902
0.7549
0.7342
0.7214
0.7133
0.7078
0.7041
0.7015
0.6998
0.6986
0.6978
0.6973
0.6971
0.6971
0.6973
0.6976
-0
.6
-105
-1
20
0
-6
-1
35
5
-4
-90
FREQUENCY
(GHz)
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
-75
5
Per Div
.4
-0
-3
.0
-4
.
-5. 0
0
2
-0.
S21
50
-1
-10.0
-165
Swp Min
2GHz
S22
ANG
48.15
39.06
34.17
31.58
30.31
29.84
29.86
30.19
30.73
31.38
32.10
32.85
33.60
34.33
35.03
35.70
36.32
MAG
0.3787
0.3349
0.3133
0.3059
0.3072
0.3138
0.3237
0.3356
0.3485
0.3620
0.3757
0.3893
0.4027
0.4157
0.4283
0.4404
0.4520
ANG
-56.54
-72.15
-82.94
-90.91
-97.18
-102.35
-106.81
-110.76
-114.34
-117.64
-120.71
-123.59
-126.31
-128.89
-131.35
-133.69
-135.92
• The data does not include gate, drain and source bond wires.
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
P4/6
TC1301
REV.2_04/12/2004
SMALL SIGNAL MODEL, VDS = 4 V, IDS = 50 mA
SCHEMATIC
PARAMETERS
Parameters
Lg
Cgd
Rg
Rd
Parameters
Lg
Ld
0.057 nH
Rg
Gm
Cgs
Ri
Cds
2.08 Ohm Ls
Cgs
Rds
0.959 pF
Ri
T
Cds
5.78 Ohm Rds
Cgd
Gm
Rs
Rs
T
1.66 Ohm
0.019 nH
0.167 pF
93.2 Ohm
0.074 pF
Rd
1.358 Ohm
284.0 mS
Ld
0.038 nH
5.54 psec
Ls
SMALL SIGNAL MODEL, VDS = 6 V, IDS = 80 mA
SCHEMATIC
PARAMETERS
Parameters
Lg
Cgd
Rg
Gm
Cgs
Ri
Rd
Cds
T
Rds
Ld
Lg
0.056 nH
Rg
1.954 Ohm Ls
Ls
Rs
Cgs
1.33 pF
Ri
5.58 Ohm Rds
Cgd
Rs
Parameters
Cds
0.052 pF
Rd
Gm
315 mS
Ld
T
5.63 psec
1.808 Ohm
0.016 nH
0.185 pF
90.1 Ohm
1.422 Ohm
0.036 nH
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
P5/6
TC1301
REV.2_04/12/2004
LARGE SIGNAL MODEL, VDS = 6 V, IDS =80 mA
TOM2 MODEL PARAMETERS
Parameters
VTO
SCHEMATIC
Lg
Rg
Cgd
Rd
Rid
Cgs
Rdb
Id
Cds
Ris
Cbs
Ld
Ls
-0.43283 V
0.5 V
ALPHA
9.54
CGD
BETA
0.49
CGS
6.018 pF
GAMMA
0.0416
CDS
0.1599 pF
DELTA
0.3091
RIS
5.755 Ohm
0.84
RID
0.0554 pF
NG
0.1
VBR
0.001 Ohm
9V
ND
0.01
RDB
94.333 Ohm
CBS
0.0463 pF
Q
TAU
Rs
Parameters
VMAX
5.558 ps
25 °C
RG
2.0833 Ohm
RD
1.358 Ohm
LS
0.01893 nH
RS
1.662 Ohm
LG
0.0576 nH
IS
1E-11 mA
LD
0.038 nH
N
1
AFAC
1
VBI
1V
NFING
1
VDELTA
TNOM
0.2 V
CHIP HANDLING
DIE ATTACHMENT: Conductive epoxy or eutectic die attach is recommended. Eutectic die attach can be
accomplished with Au-Sn (80%Au-20%Sn) perform at stage temperature: 290°C ± 5°C; Handling Tool:
Tweezers; Time: less than 1min.
WIRE BONDING: The recommended wire bond method is thermocompression bonding with 0.7 to 1.0 mil
(0.018 to 0.025 mm) gold wire. Stage temperature: 220°C to 250°C; Bond Tip Temperature: 150°C; Bond Force:
20 to 30 gms depending on size of wire and Bond Tip Temperature.
HANDLING PRECAUTIONS: The user must operate in a clean, dry environment. Care should be exercised
during handling avoid damage to the devices. Electrostatic Discharge (ESD) precautions should be observed at
all stages of storage, handling, assembly, and testing. The static discharge must be less than 300V.
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
P6/6