TC1304V REV5_20070502 Low Noise and Medium Power GaAs FETs FEATURES ! Via holes for source grounding ! Low Noise Figure: NF = 0.8dB Typical at 12 GHz ! High Associated Gain: Ga = 13 dB Typical at 12 GHz ! High Dynamic Range: 1 dB Compression Power P-1 = 24.5 dBm at 12 GHz ! Breakdown Voltage: BVDGO ≥ 9 V ! Lg = 0.25 µm, Wg = 600 µm ! All-Gold Metallization for High Reliability ! Tight Vp ranges control ! High RF input power handling capability ! 100 % DC Tested PHOTO ENLARGEMENT DESCRIPTION The TC1304V is the same as TC1304 expect via holes in the source pads for reducing the grounding inductance. The device is processed with via-holes for high gain applications. It can be used in circuits up to 30 GHz and suitable for low noise and medium power amplifier applications including a wide range of commercial and military applications. All devices are 100% DC tested to assure consistent quality. All bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding. ELECTRICAL SPECIFICATIONS (TA=25 °C) Symbol Conditions NF Noise Figure at VDS = 4 V, IDS = 50 mA, f Ga Associated Gain at VDS = 4 V, IDS = 50 mA, f MIN = 12GHz = 12GHz MAX 0.8 1.0 UNIT dB 11 13 dB 23.5 24.5 dBm 9 10 dB P1dB Output Power at 1dB Gain Compression Point, f GL Linear Power Gain, f IDSS Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V 180 mA gm Transconductance at VDS = 2 V, VGS = 0 V 200 mS VP Pinch-off Voltage at VDS = 2 V, ID = 1.2 mA -1.0* Volts BVDGO Rth = 12GHz VDS = 6 V, IDS= 80 mA TYP = 12GHz,VDS = 6 V, IDS= 80 mA Drain-Gate Breakdown Voltage at IDGO = 0.3 mA Thermal Resistance 9 12 Volts 48 °C/W Note: * For the tight control of the pinch-off voltage . TC1304V’s are divided into 3 groups: (1) TC1304VP0710 : Vp = -0.7V to -1.0V (2) TC1304VP0811 : Vp = -0.8V to -1.1V (3) TC1304VP0912 : Vp = -0.9V to -1.2V In addition, the customers may specify their requirements. TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 1/2 TC1304V REV5_20070502 ABSOLUTE MAXIMUM RATINGS (TA=25 °C) Symbol Parameter Rating VDS Drain-Source Voltage 7.0 V VGS Gate-Source Voltage -3.0 V IDS Drain Current IDSS IGS Gate Current 600 µA Pin RF Input Power, CW 24 dBm PT Continuous Dissipation 800 mW TCH Channel Temperature 175 °C TSTG Storage Temperature - 65 °C to +175 °C CHIP DIMENSIONS 320 ! 12 Units: Micrometers Chip Thickness: 50 D 340 ! 12 S G Gate Pad: 75 x 70 Drain Pad: 80 x 70 Source Pad: 75 x 80 S CHIP HANDLING DIE ATTACHMENT: Conductive epoxy or eutectic die attach is recommended. For eutectic die attach can be accomplished with Au-Sn (80%Au-20%Sn) perform in State Temperature: 290℃ ± 5 ℃ ; Handling Tool : Tweezers ; Time: less than 1min . WIRE BONDING: The recommended wire bond method is thermo-compression bonding with 0.7 or 1.0 mil (0.018 or 0.025mm) gold wire. Stage Temperature: 220℃ to 250℃ ; Bond Tip Temperature : 150℃ ; Bond Force: 20 to 30 gms depending on size of wire and Bond Tip Temperature. HANDLING PRECAUTIONS: The user must operate in a clean, dry environment. Care should be exercised during handling avoid damage to the devices. Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. The static discharge must be less than 300V. TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 2/2