TRANSCOM TC1201V

TC1201V
REV5_20070502
Low Noise and Medium Power GaAs FETs
FEATURES
PHOTO ENLARGEMENT
! Via holes for source grounding
! Low Noise Figure: NF = 0.5 dB Typical at 12 GHz
! High Associated Gain: Ga = 13 dB Typical at 12 GHz
! High Dynamic Range: 1 dB Compression Power P-1 = 21.5 dBm at 6 V,
40 mA and 12 GHz
! Breakdown Voltage: BVDGO ≥ 9 V
! Lg = 0.25 µm, Wg = 300 µm
! All-Gold Metallization for High Reliability
! Tight Vp ranges control
! High RF input power handling capability
! 100 % DC Tested
DESCRIPTION
The TC1201V is the same as TC1201 expect via holes in the source reducing the grounding inductance. The
device is processed with via-holes for high gain applications. It can be used in circuits up to 30 GHz and suitable
for low noise and medium power amplifier application including a wide range of commercial and military
application. All devices are 100% DC tested to assure consistent quality. All bond pads are gold plated for either
thermo-compression or thermo-sonic wire bonding.
ELECTRICAL SPECIFICATIONS (TA=25 °C)
Symbol
Conditions
NF
Noise Figure at VDS = 4 V, IDS = 25 mA, f = 12GHz
Ga
Associated Gain at VDS = 4 V, IDS = 25 mA, f = 12GHz
P1dB
Output Power at 1dB Gain Compression Point, f = 12GHz VDS = 6 V, IDS = 40 mA
GL
Linear Power Gain, f
IDSS
Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V
= 12GHz VDS = 6 V, IDS = 40 mA
MIN
TYP
MAX
0.5
0.7
UNIT
dB
11
13
dB
20.5
21.5
dBm
11
12
dB
90
mA
gm
Transconductance at VDS = 2 V, VGS = 0 V
100
mS
VP
Pinch-off Voltage at VDS = 2 V, ID = 0.6 mA
-1.0*
Volts
BVDGO
Rth
Drain-Gate Breakdown Voltage at IDGO =0.15 mA
Thermal Resistance
9
12
Volts
96
°C/W
Note: * For the tight control of the pinch-off voltage . TC1201V’s are divided into 3 groups:
(1)TC1201VP0710 : Vp = -0.7V to -1.0V (2)TC1201VP0811 : Vp = -0.8V to -1.1V
(3)TC1201VP0912 : Vp = -0.9V to -1.2V
In addition, the customers may specify their requirements.
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
1/2
TC1201V
REV5_20070502
ABSOLUTE MAXIMUM RATINGS (TA=25 °C) TYPICAL NOISE PARAMETERS (TA=25 °C)
VDS = 4 V, IDS = 25 mA
Symbol
Parameter
Rating
Γopt
VDS
Drain-Source Voltage
7.0 V
Frequency
(GHz)
VGS
Gate-Source Voltage
-3.0 V
2
0.36
20.2
0.96
14
0.59
0.38
18.5
0.83
31
0.50
0.40
16.7
0.67
51
0.39
IDS
Drain Current
IDSS
4
IGS
Gate Current
300 µA
6
Pin
RF Input Power, CW
21 dBm
PT
Continuous Dissipation
400 mW
TCH
Channel Temperature
175 °C
TSTG
Storage Temperature
- 65 °C to +175 °C
NFopt
(dB)
GA
(dB)
MAG
ANG
Rn/50
8
0.43
15.2
0.51
76
0.28
10
0.50
13.8
0.37
108
0.17
12
0.56
12.7
0.28
147
0.13
14
0.66
12.1
0.25
-166
0.11
16
0.83
12.0
0.31
-108
0.15
18
1.03
12.2
0.49
-41
0.34
CHIP DIMENSIONS
430 ! 12
Units: Micrometers
D
Chip Thickness: 55
D
Gate Pad: 55 x 50
250! 12
S
G
S
G
S
Drain Pad: 55 x 50
Source Pad: 55 x 65
CHIP HANDLING
DIE ATTACHMENT : Conductive epoxy or eutectic die attach is recommended. For eutectic die attach can be
accomplished with Au-Sn (80%Au-20%Sn) perform in State Temperature : 290°C ±5°C ; Handling Tool :
Tweezers ; Time : less than 1min .
WIRE BONDING : The recommended wire bond method is thermo-compression bonding with 0.7 or 1.0 mil
(0.018 or 0.025mm) gold wire. State Temperature : 220°C to 250°C ; Bond Tip Temperature : 150°C ; Bond Force :
20 to 30 gms depending on size of wire and Bond Tip Temperature.
HANDLING PRECAUTIONS : The user must operate in a clean, dry environment. Care should be exercised
during handling avoid damage to the devices. Electrostatic Discharge(ESD) precautions should be observed at all
stages of storage, handling, assembly, and testing. The static discharge must less than 300V.
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
2/2