TC1201V REV5_20070502 Low Noise and Medium Power GaAs FETs FEATURES PHOTO ENLARGEMENT ! Via holes for source grounding ! Low Noise Figure: NF = 0.5 dB Typical at 12 GHz ! High Associated Gain: Ga = 13 dB Typical at 12 GHz ! High Dynamic Range: 1 dB Compression Power P-1 = 21.5 dBm at 6 V, 40 mA and 12 GHz ! Breakdown Voltage: BVDGO ≥ 9 V ! Lg = 0.25 µm, Wg = 300 µm ! All-Gold Metallization for High Reliability ! Tight Vp ranges control ! High RF input power handling capability ! 100 % DC Tested DESCRIPTION The TC1201V is the same as TC1201 expect via holes in the source reducing the grounding inductance. The device is processed with via-holes for high gain applications. It can be used in circuits up to 30 GHz and suitable for low noise and medium power amplifier application including a wide range of commercial and military application. All devices are 100% DC tested to assure consistent quality. All bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding. ELECTRICAL SPECIFICATIONS (TA=25 °C) Symbol Conditions NF Noise Figure at VDS = 4 V, IDS = 25 mA, f = 12GHz Ga Associated Gain at VDS = 4 V, IDS = 25 mA, f = 12GHz P1dB Output Power at 1dB Gain Compression Point, f = 12GHz VDS = 6 V, IDS = 40 mA GL Linear Power Gain, f IDSS Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V = 12GHz VDS = 6 V, IDS = 40 mA MIN TYP MAX 0.5 0.7 UNIT dB 11 13 dB 20.5 21.5 dBm 11 12 dB 90 mA gm Transconductance at VDS = 2 V, VGS = 0 V 100 mS VP Pinch-off Voltage at VDS = 2 V, ID = 0.6 mA -1.0* Volts BVDGO Rth Drain-Gate Breakdown Voltage at IDGO =0.15 mA Thermal Resistance 9 12 Volts 96 °C/W Note: * For the tight control of the pinch-off voltage . TC1201V’s are divided into 3 groups: (1)TC1201VP0710 : Vp = -0.7V to -1.0V (2)TC1201VP0811 : Vp = -0.8V to -1.1V (3)TC1201VP0912 : Vp = -0.9V to -1.2V In addition, the customers may specify their requirements. TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 1/2 TC1201V REV5_20070502 ABSOLUTE MAXIMUM RATINGS (TA=25 °C) TYPICAL NOISE PARAMETERS (TA=25 °C) VDS = 4 V, IDS = 25 mA Symbol Parameter Rating Γopt VDS Drain-Source Voltage 7.0 V Frequency (GHz) VGS Gate-Source Voltage -3.0 V 2 0.36 20.2 0.96 14 0.59 0.38 18.5 0.83 31 0.50 0.40 16.7 0.67 51 0.39 IDS Drain Current IDSS 4 IGS Gate Current 300 µA 6 Pin RF Input Power, CW 21 dBm PT Continuous Dissipation 400 mW TCH Channel Temperature 175 °C TSTG Storage Temperature - 65 °C to +175 °C NFopt (dB) GA (dB) MAG ANG Rn/50 8 0.43 15.2 0.51 76 0.28 10 0.50 13.8 0.37 108 0.17 12 0.56 12.7 0.28 147 0.13 14 0.66 12.1 0.25 -166 0.11 16 0.83 12.0 0.31 -108 0.15 18 1.03 12.2 0.49 -41 0.34 CHIP DIMENSIONS 430 ! 12 Units: Micrometers D Chip Thickness: 55 D Gate Pad: 55 x 50 250! 12 S G S G S Drain Pad: 55 x 50 Source Pad: 55 x 65 CHIP HANDLING DIE ATTACHMENT : Conductive epoxy or eutectic die attach is recommended. For eutectic die attach can be accomplished with Au-Sn (80%Au-20%Sn) perform in State Temperature : 290°C ±5°C ; Handling Tool : Tweezers ; Time : less than 1min . WIRE BONDING : The recommended wire bond method is thermo-compression bonding with 0.7 or 1.0 mil (0.018 or 0.025mm) gold wire. State Temperature : 220°C to 250°C ; Bond Tip Temperature : 150°C ; Bond Force : 20 to 30 gms depending on size of wire and Bond Tip Temperature. HANDLING PRECAUTIONS : The user must operate in a clean, dry environment. Care should be exercised during handling avoid damage to the devices. Electrostatic Discharge(ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. The static discharge must less than 300V. TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 2/2