ONSEMI BAS40

BAS40-06LT1
Preferred Device
Common Anode Schottky
Barrier Diodes
These Schottky barrier diodes are designed for high speed
switching applications, circuit protection, and voltage clamping.
Extremely low forward voltage reduces conduction loss. Miniature
surface mount package is excellent for hand held and portable
applications where space is limited.
• Extremely Fast Switching Speed
• Low Forward Voltage — 0.50 Volts (Typ) @ IF = 10 mAdc
• Device Marking: L2
http://onsemi.com
40 VOLTS
SCHOTTKY BARRIER DIODE
3
1
MAXIMUM RATINGS (TJ = 150°C unless otherwise noted)
Rating
Symbol
VR
Reverse Voltage
2
Value
Unit
40
Volts
Max
Unit
225
1.8
mW
mW/°C
–55 to
+150
°C
PLASTIC
SOT–23 (TO–236AB)
CASE 318
THERMAL CHARACTERISTICS
Symbol
PF
TJ, Tstg
Characteristic
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
Operating Junction and Storage
Temperature Range
CATHODE
1
ANODE
3
2
CATHODE
ORDERING INFORMATION
Device
Package
Shipping
BAS40–06LT1
SOT–23
3000 / Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
 Semiconductor Components Industries, LLC, 2000
April, 2000 – Rev. 3
1
Publication Order Number:
BAS40–06LT1/D
BAS40–06LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Max
Unit
V(BR)R
40
—
Volts
Total Capacitance (VR = 1.0 V, f = 1.0 MHz)
CT
—
5.0
pF
Reverse Leakage (VR = 25 V)
IR
—
1.0
µAdc
Forward Voltage (IF = 0.1 mAdc)
VF
—
380
mVdc
Forward Voltage (IF = 30 mAdc)
VF
—
500
mVdc
Forward Voltage (IF = 100 mAdc)
VF
—
1.0
Vdc
Characteristic
Reverse Breakdown Voltage (IR = 10 µA)
IR , REVERSE CURRENT (µA)
100
10
150°C
1.0
1 25°C
85°C
25°C
– 40°C
0.1
0
0.1
TA = 150°C
125°C
10
85°C
1.0
0.1
25°C
0.01
0.2
0.3
– 55°C
0.4
0.001
0.6
0.5
0.7
0
0.8
5.0
VF, FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
10
15
VR, REVERSE VOLTAGE (VOLTS)
3.0
2.5
2.0
1.5
1.0
0.5
0
0
5.0
10
20
Figure 2. Reverse Current versus Reverse
Voltage
3.5
C T, CAPACITANCE (pF)
IF, FORWARD CURRENT (mA)
100
15
20
25
30
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Capacitance
http://onsemi.com
2
35
40
25
BAS40–06LT1
INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the
total design. The footprint for the semiconductor packages
must be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
SOT–23
SOT–23 POWER DISSIPATION
SOLDERING PRECAUTIONS
The power dissipation of the SOT–23 is a function of
the drain pad size. This can vary from the minimum pad
size for soldering to a pad size given for maximum power
dissipation. Power dissipation for a surface mount device
is determined by TJ(max), the maximum rated junction
temperature of the die, RθJA, the thermal resistance from
the device junction to ambient, and the operating
temperature, TA. Using the values provided on the data
sheet for the SOT–23 package, PD can be calculated as
follows:
PD =
The melting temperature of solder is higher than the
rated temperature of the device. When the entire device is
heated to a high temperature, failure to complete soldering
within a short time could result in device failure.
Therefore, the following items should always be observed
in order to minimize the thermal stress to which the
devices are subjected.
• Always preheat the device.
• The delta temperature between the preheat and
soldering should be 100°C or less.*
• When preheating and soldering, the temperature of
the leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference shall be a maximum of 10°C.
• The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
• When shifting from preheating to soldering, the
maximum temperature gradient shall be 5°C or less.
• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied
during cooling.
TJ(max) – TA
RθJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values
into the equation for an ambient temperature TA of 25°C,
one can calculate the power dissipation of the device
which in this case is 225 milliwatts.
PD =
150°C – 25°C
556°C/W
= 225 milliwatts
The 556°C/W for the SOT–23 package assumes the use
of the recommended footprint on a glass epoxy printed
circuit board to achieve a power dissipation of 225
milliwatts. There are other alternatives to achieving
higher power dissipation from the SOT–23 package.
Another alternative would be to use a ceramic substrate or
an aluminum core board such as Thermal Clad. Using a
board material such as Thermal Clad, an aluminum core
board, the power dissipation can be doubled using the
same footprint.
* Soldering a device without preheating can cause
excessive thermal shock and stress which can result in
damage to the device.
http://onsemi.com
3
BAS40–06LT1
PACKAGE DIMENSIONS
SOT–23 (TO–236AB)
PLASTIC PACKAGE
CASE 318–08
ISSUE AF
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
L
3
B S
1
V
2
DIM
A
B
C
D
G
H
J
K
L
S
V
G
C
D
H
J
K
INCHES
MIN
MAX
0.1102 0.1197
0.0472 0.0551
0.0350 0.0440
0.0150 0.0200
0.0701 0.0807
0.0005 0.0040
0.0034 0.0070
0.0140 0.0285
0.0350 0.0401
0.0830 0.1039
0.0177 0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
STYLE 12:
PIN 1. CATHODE
2. CATHODE
3. ANODE
Thermal Clad is a registered trademark of the Bergquist Company.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death
may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
NORTH AMERICA Literature Fulfillment:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada
Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada
Email: [email protected]
Fax Response Line: 303–675–2167 or 800–344–3810 Toll Free USA/Canada
N. American Technical Support: 800–282–9855 Toll Free USA/Canada
EUROPE: LDC for ON Semiconductor – European Support
German Phone: (+1) 303–308–7140 (M–F 1:00pm to 5:00pm Munich Time)
Email: ONlit–[email protected]
French Phone: (+1) 303–308–7141 (M–F 1:00pm to 5:00pm Toulouse Time)
Email: ONlit–[email protected]
English Phone: (+1) 303–308–7142 (M–F 12:00pm to 5:00pm UK Time)
Email: [email protected]
EUROPEAN TOLL–FREE ACCESS*: 00–800–4422–3781
*Available from Germany, France, Italy, England, Ireland
CENTRAL/SOUTH AMERICA:
Spanish Phone: 303–308–7143 (Mon–Fri 8:00am to 5:00pm MST)
Email: ONlit–[email protected]
ASIA/PACIFIC: LDC for ON Semiconductor – Asia Support
Phone: 303–675–2121 (Tue–Fri 9:00am to 1:00pm, Hong Kong Time)
Toll Free from Hong Kong & Singapore:
001–800–4422–3781
Email: ONlit–[email protected]
JAPAN: ON Semiconductor, Japan Customer Focus Center
4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–8549
Phone: 81–3–5740–2745
Email: [email protected]
ON Semiconductor Website: http://onsemi.com
For additional information, please contact your local
Sales Representative.
http://onsemi.com
4
BAS40–06LT1/D