BAT54WT1 Preferred Device Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. • Extremely Fast Switching Speed • Extremely Low Forward Voltage – 0.35 Volts (Typ) @ IF = 10 mAdc http://onsemi.com 30 VOLT SCHOTTKY BARRIER DETECTOR AND SWITCHING DIODE 3 CATHODE 1 ANODE MARKING DIAGRAM MAXIMUM RATINGS (TJ = 125°C unless otherwise noted) Symbol Value Unit Reverse Voltage VR 30 Volts Forward Power Dissipation @ TA = 25°C Derate above 25°C PF 200 1.6 mW mW/°C Forward Current (DC) IF 200 Max mA Junction Temperature TJ 125 Max °C Storage Temperature Range Tstg –55 to +150 °C Rating 3 3 B4 1 2 (SC–70) SOT–323 CASE 419 STYLE 2 1 2 ORDERING INFORMATION Device BAT54WT1 Package Shipping SOT–323 3000/Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 November, 2000 – Rev. 5 Publication Order Number: BAT54WT1/D BAT54WT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)R 30 – – Volts Total Capacitance (VR = 1.0 V, f = 1.0 MHz) CT – 7.6 10 pF Reverse Leakage (VR = 25 V) IR – 0.5 2.0 µAdc Forward Voltage (IF = 0.1 mAdc) VF – 0.22 0.24 Vdc Forward Voltage (IF = 30 mAdc) VF – 0.41 0.5 Vdc Forward Voltage (IF = 100 mAdc) VF – 0.52 0.8 Vdc Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc, Figure 1) trr – – 5.0 ns Forward Voltage (IF = 1.0 mAdc) VF – 0.29 0.32 Vdc Forward Voltage (IF = 10 mAdc) VF – 0.35 0.40 Vdc Forward Current (DC) IF – – 200 mAdc Repetitive Peak Forward Current IFRM – – 300 mAdc Non–Repetitive Peak Forward Current (t < 1.0 s) IFSM – – 600 mAdc Reverse Breakdown Voltage (IR = 10 µA) http://onsemi.com 2 BAT54WT1 820 Ω +10 V 2k 100 µH 0.1 µF IF tr tp IF T 10% 0.1 µF trr T DUT 50 Ω OUTPUT PULSE GENERATOR 50 Ω INPUT SAMPLING OSCILLOSCOPE 90% iR(REC) = 1 mA IR VR OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) INPUT SIGNAL Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit 100 1000 TA = 150°C IR, REVERSE CURRENT (µA) 85°C 10 150°C 1.0 25°C 0.1 0.0 –40°C –55°C 100 TA = 125°C 10 1.0 TA = 85°C 0.1 0.01 TA = 25°C 0.001 0.2 0.3 0.4 0.1 0.5 VF, FORWARD VOLTAGE (VOLTS) 0 0.6 5 15 25 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 2. Forward Voltage Figure 3. Leakage Current 14 CT, TOATAL CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 125°C 12 10 8 6 4 2 0 0 5 10 15 20 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Total Capacitance http://onsemi.com 3 25 30 30 BAT54WT1 INFORMATION FOR USING THE SOT–323 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.025 0.65 0.025 0.65 0.075 1.9 0.035 0.9 0.028 0.7 inches mm SC–70/SOT–323 POWER DISSIPATION SOLDERING PRECAUTIONS The power dissipation of the SC–70/SOT–323 is a function of the collector pad size. This can vary from the minimum pad size for soldering to the pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device junction to ambient; and the operating temperature, TA. Using the values provided on the data sheet, PD can be calculated as follows. PD = The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. • Always preheat the device. • The delta temperature between the preheat and soldering should be 100°C or less.* • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference should be a maximum of 10°C. • The soldering temperature and time should not exceed 260°C for more than 10 seconds. • When shifting from preheating to soldering, the maximum temperature gradient should be 5°C or less. • After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. • Mechanical stress or shock should not be applied during cooling TJ(max) – TA RθJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 200 milliwatts. PD = 150°C – 25°C 0.625°C/W = 200 milliwatts The 0.625°C/W assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 200 milliwatts. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, a power dissipation of 300 milliwatts can be achieved using the same footprint. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. http://onsemi.com 4 BAT54WT1 PACKAGE DIMENSIONS (SC–70) SOT–323 PLASTIC PACKAGE CASE 419–02 ISSUE H A L NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3 B S 1 2 D G C 0.05 (0.002) J N K H http://onsemi.com 5 DIM A B C D G H J K L N S INCHES MIN MAX 0.071 0.087 0.045 0.053 0.032 0.040 0.012 0.016 0.047 0.055 0.000 0.004 0.004 0.010 0.017 REF 0.026 BSC 0.028 REF 0.079 0.095 STYLE 2: PIN 1. ANODE 2. N.C. 3. CATHODE MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.00 0.30 0.40 1.20 1.40 0.00 0.10 0.10 0.25 0.425 REF 0.650 BSC 0.700 REF 2.00 2.40 BAT54WT1 Notes http://onsemi.com 6 BAT54WT1 Notes http://onsemi.com 7 BAT54WT1 Thermal Clad is a registered trademark of the Bergquist Company. 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SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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