MICROWAVE CORPORATION HMC463 v03.0304 GaAs PHEMT MMIC LOW NOISE AGC AMPLIFIER, 2.0 - 20.0 GHz AMPLIFIERS - CHIP 1 Typical Applications Features The HMC463 is ideal for: Gain: 14 dB • Telecom Infrastructure Noise Figure: 2.5 dB @ 10 GHz • Microwave Radio & VSAT P1dB Output Power: +19 dBm @ 10 GHz • Military & Space Supply Voltage: +5.0V @ 60 mA • Test Instrumentation 50 Ohm Matched Input/Output • Fiber Optics 3.15 mm x 1.63 mm x 0.1 mm Functional Diagram General Description The HMC463 is a GaAs MMIC PHEMT Low Noise AGC Distributed Amplifier die which operates between 2 and 20 GHz. The amplifier provides 14 dB of gain, 2.5 dB noise figure and 19 dBm of output power at 1 dB gain compression while requiring only 60 mA from a +5V supply. An optional gate bias (Vgg2) is provided to allow Adjustable Gain Control (AGC) of 10 dB typical. Gain flatness is excellent at ±0.15 dB from 6 - 18 GHz making the HMC463 ideal for EW, ECM and RADAR applications. The HMC463 amplifier can easily be integrated into Multi-Chip-Modules (MCMs) due to its small size. All data is with the chip in a 50 Ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils). Vgg2: Optional Gate Bias for AGC Electrical Specifications, TA = +25° C, Vdd= 5V, Idd= 60 mA* Parameter Min. Frequency Range Gain Typ. Max. Min. 2.0 - 6.0 12 Typ. Max. Min. 6.0 - 18.0 15 12 14 12 Max. 18.0 - 20.0 GHz 14 dB ±1.0 Gain Variation Over Temperature 0.015 0.025 0.015 0.025 0.015 0.025 dB/ °C 3.0 4.0 2.5 3.7 3.5 4.0 dB ±0.15 dB Input Return Loss 12 15 14 dB Output Return Loss 11 12 10 dB Output Power for 1 dB Compression (P1dB) 14 dBm Saturated Output Power (Psat) 16 19 21 13 16 20 11 19 dBm Output Third Order Intercept (IP3) 31 28 26 dBm Supply Current (Idd) (Vdd= 5V, Vgg1= -0.9V Typ.) 60 60 60 mA * Adjust Vgg1 between -1.5 to -0.5V to achieve Idd= 60 mA typical. 1 - 98 Units Gain Flatness Noise Figure ±0.15 Typ. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com HMC463 v03.0304 MICROWAVE CORPORATION GaAs PHEMT MMIC LOW NOISE AGC AMPLIFIER, 2.0 - 20.0 GHz 20 15 18 10 16 5 14 S21 0 S11 S22 -5 -10 12 10 8 -15 6 -20 4 -25 2 -30 +25C +85C -55C 0 0 2 4 6 8 10 12 14 16 18 20 22 24 0 2 4 6 FREQUENCY (GHz) 8 10 12 14 16 18 20 22 FREQUENCY (GHz) Input Return Loss vs. Temperature Output Return Loss vs. Temperature 0 0 +25C +85C -55C -5 OUTPUT RETURN LOSS (dB) INPUT RETURN LOSS (dB) 17 - 25 GHz -10 -15 -20 -25 -30 1 AMPLIFIERS - CHIP 20 GAIN (dB) RESPONSE (dB) MMIC PUMPED MIXER GainGaAs & Return LossSUB-HARMONICALLY Gain vs. Temperature +25C +85C -55C -5 -10 -15 -20 0 2 4 6 8 10 12 14 16 18 20 0 22 2 4 6 FREQUENCY (GHz) 8 10 12 14 16 18 20 22 18 20 22 FREQUENCY (GHz) Noise Figure vs. Temperature Reverse Isolation vs. Temperature 0 10 +25C +85C -55C 8 NOISE FIGURE (dB) REVERSE ISOLATION (dB) 9 +25C +85C -55C -10 -20 -30 -40 7 6 5 4 3 2 -50 1 -60 0 0 2 4 6 8 10 12 14 FREQUENCY (GHz) 16 18 20 22 0 2 4 6 8 10 12 14 16 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 1 - 99 HMC463 v03.0304 MICROWAVE CORPORATION GaAs PHEMT MMIC LOW NOISE AGC AMPLIFIER, 2.0 - 20.0 GHz 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 +25C +85C -55C Psat (dBm) P1dB (dBm) GaAs MMIC SUB-HARMONICALLY Psat PUMPED MIXER P1dB vs. Temperature vs. Temperature 0 2 4 6 8 10 12 14 16 18 20 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 22 0 2 6 10 12 14 16 18 20 22 Gain, Power & Noise Figure vs. Supply Voltage @ 10 GHz, Fixed Vgg1 5 +25C +85C -55C Gain P1dB 20 4.5 Noise Figure 4 19 3.5 18 3 17 2.5 16 2 15 1.5 14 1 13 0.5 0 12 2 4 6 8 10 12 14 16 18 20 22 4.5 4.75 5 5.25 5.5 Vdd (Vdc) Noise Figure & Supply Current vs. Control Voltage @ 10 GHz 70 5 65 4.5 60 4 55 3.5 50 3 45 2.5 40 2 1.5 35 Gain P1dB OIP3 30 25 Noise Figure 1 Idd 0.5 0 20 -1 -0.8 -0.6 -0.4 -0.2 0 Vgg2 (Vdc) 0.2 0.4 0.6 0.8 1 -1.2 -1 -0.8 -0.6 -0.4 -0.2 0 0.2 0.4 0.6 Vgg2 (Vdc) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 0.8 1 NOISE FIGURE (dB) Idd (mA) Gain, P1dB & Output IP3 vs. Control Voltage @ 10 GHz 32 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 -1.2 NOISE FIGURE (dB) GAIN (dB), P1dB (dBm) 21 FREQUENCY (GHz) GAIN (dB), P1dB (dBm), OIP3 (dBm) 8 22 0 1 - 100 4 FREQUENCY (GHz) Output IP3 vs. Temperature 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 17 - 25 GHz +25C +85C -55C FREQUENCY (GHz) OIP3 (dBm) AMPLIFIERS - CHIP 1 HMC463 v03.0304 MICROWAVE CORPORATION GaAs PHEMT MMIC LOW NOISE AGC AMPLIFIER, 2.0 - 20.0 GHz GAIN (dB) 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 -10 Vgg2=-1.3 V Vgg2=-1.2 V Vgg2=-1.1 V Vgg2=-1.0 V 0 2 4 6 8 10 Vgg2=-0.9 V Vgg2=-0.6 V Vgg2=-0.4 V Vgg2=0 V 12 14 16 18 20 22 Drain Bias Voltage (Vdd) +9.0 Vdc Gate Bias Voltage (Vgg1) -2.0 to 0 Vdc Gate Bias Voltage (Vgg2)(AGC) (Vdd -9.0) Vdc to +2.0 Vdc RF Input Power (RFin)(Vdd = +5.0 Vdc) +23 dBm Channel Temperature 175 °C Continuous Pdiss (T= 85 °C) (derate 50 mW/°C above 85 °C) 4.5 W Thermal Resistance (channel to die bottom) 20 °C/W Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C FREQUENCY (GHz) Typical Supply Current vs. Vdd Outline Drawing Vdd (V) Idd (mA) +4.5 58 +5.0 60 +5.5 62 1 AMPLIFIERS - CHIP Absolute Maximum Ratings Gain @ Several Control Voltages NOTES: 1. ALL DIMENSIONS IN INCHES [MILLIMETERS] 2. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS 3. DIE THICKNESS IS 0.004 (0.100) 4. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE 5. BACKSIDE METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND 7. BOND PAD METALIZATION: GOLD For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 1 - 101 HMC463 v03.0304 MICROWAVE CORPORATION GaAs PHEMT MMIC LOW NOISE AGC AMPLIFIER, 2.0 - 20.0 GHz AMPLIFIERS - CHIP 1 1 - 102 Pad Descriptions Pad Number Function Description 1 RFIN This pad is AC coupled and matched to 50 Ohms from 2.0 - 20.0 GHz 2 Vgg2 Optional gate control if AGC is required. Leave Vgg2 open circuited if AGC is not required. 3 Vdd Power supply voltage for the amplifier. External bypass capacitors are required 4 RFOUT This pad is AC coupled and matched to 50 Ohms from 2.0 - 20.0 GHz 5 Vgg1 Gate control for amplifier. Adjust to achieve Idd= 60 mA. Die Bottom GND Die bottom must be connected to RF/DC ground. Interface Schematic For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v03.0304 MICROWAVE CORPORATION HMC463 GaAs PHEMT MMIC LOW NOISE AGC AMPLIFIER, 2.0 - 20.0 GHz 1 AMPLIFIERS - CHIP Assembly Diagram For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 1 - 103 v03.0304 MICROWAVE CORPORATION HMC463 GaAs PHEMT MMIC LOW NOISE AGC AMPLIFIER, 2.0 - 20.0 GHz AMPLIFIERS - CHIP 1 1 - 104 Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. Typical dieto-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v03.0304 MICROWAVE CORPORATION HMC463 GaAs PHEMT MMIC LOW NOISE AGC AMPLIFIER, 2.0 - 20.0 GHz Follow these precautions to avoid permanent damage. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with electrically conductive epoxy. The mounting surface should be clean and flat. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 1 AMPLIFIERS - CHIP Handling Precautions 1 - 105