HMC392 v00.1002 MICROWAVE CORPORATION GaAs MMIC LOW NOISE AMPLIFIER, 3.5 - 7.0 GHz AMPLIFIERS - CHIP 1 Typical Applications Features The HMC392 is ideal for use as a low noise amplifier for: Gain: 15.5 dB • Point to Point Radios Single Supply Voltage: +5.0V • VSAT 50 Ohm Matched Input/Output • LO Driver for HMC Mixers No External Components Required • Military EW, ECM, C3I Small Size: 1.3 mm x 1.0 mm x 0.1 mm Noise Figure: 2.4 dB • Space Functional Diagram General Description The HMC392 is a GaAs MMIC Low Noise Amplifier die which operates between 3.5 and 7.0 GHz. The amplifier provides 15.5 dB of gain, 2.4 dB noise figure, and 28 dBm IP3 from a +5.0V supply voltage. The HMC392 has six bonding adjustment options which allow the user to select the bias point and output power of the device (+15 to +18 dBm). The HMC392 amplifier can easily be integrated into Multi-Chip-Modules (MCMs) due to its small (1.3 mm2) size. All data is with the chip in a 50 Ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils). Electrical Specifications, TA = +25° C, Vdd = 5V Parameter Min. Frequency Range Gain Typ. Max. Min. 4.0 - 6.0 13 Gain Variation Over Temperature 15.5 11.5 Typ. Max. 3.5 - 7.0 GHz 14 dB 0.018 0.025 0.018 0.025 dB/ °C Noise Figure 2.4 3.0 2.8 3.4 dB Input Return Loss 15 10 dB Output Return Loss 15 10 dB 16 dBm 18 dBm 28 dBm 50 mA Output Power for 1 dB Compression (P1dB) 13 Saturated Output Power (Psat) Output Third Order Intercept (IP3) Supply Current (Idd) 16 12 18 25 28 23 50 Note: Data taken with pads PS4 and PS8 bonded to ground (state 5) unless otherwise noted. 1 - 30 Units For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com HMC392 v00.1002 MICROWAVE CORPORATION GaAs MMIC LOW NOISE AMPLIFIER, 3.5 - 7.0 GHz 20 15 S21 S11 S22 5 0 GAIN (dB) RESPONSE (dB) 10 -5 -10 -15 -20 -25 2 3 4 5 6 7 8 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 +85C -55C 3.5 4 4.5 FREQUENCY (GHz) 5 5.5 6 6.5 7 7.5 8 FREQUENCY (GHz) Input Return Loss vs. Temperature Output Return Loss vs. Temperature 0 0 +25C +85C -55C +25C +85C -55C -5 RETURN LOSS (dB) -5 RETURN LOSS (dB) 1 +25C 3 9 17 - 25 GHz -10 -15 -20 AMPLIFIERS - CHIP GaAs Gain MMIC SUB-HARMONICALLY PUMPED MIXER Broadband & Return Loss Gain vs. Temperature -10 -15 -20 -25 -25 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 3 3.5 4 4.5 FREQUENCY (GHz) 5 5.5 6 6.5 7 7.5 8 7.5 8 FREQUENCY (GHz) Noise Figure vs. Temperature Reverse Isolation vs. Temperature 5 0 4.5 3.5 ISOLATION (dB) NOISE FIGURE (dB) +25C +85C -10 4 3 2.5 2 1.5 1 +25C 0.5 +85C -55C -55C -20 -30 -40 -50 0 -60 3 3.5 4 4.5 5 5.5 6 FREQUENCY (GHz) 6.5 7 7.5 8 3 3.5 4 4.5 5 5.5 6 6.5 7 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 1 - 31 HMC392 v00.1002 MICROWAVE CORPORATION GaAs MMIC LOW NOISE AMPLIFIER, 3.5 - 7.0 GHz P1dB vs. Temperature Psat vs. Temperature 22 22 21 21 20 20 19 19 18 18 Psat (dBm) P1dB (dBm) 17 16 15 14 17 16 15 14 +25C +85C -55C 13 12 +25C +85C -55C 13 12 11 11 10 10 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 3 3.5 4 4.5 FREQUENCY (GHz) 32 31 30 OIP3 (dBm) 29 28 27 26 25 24 +25C +85C -55C 23 22 21 20 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 4.5 7 7.5 8 4.75 5 5.25 5.5 Gain & Noise Figure vs. Power Select State 22 18 21 16 GAIN, NOISE FIGURE (dB) 20 19 P1dB (dBm) 6.5 Vs (Vdc) P1dB vs. Power Select State 18 17 16 15 14 State 1 Idd=75mA State 2 Idd=62mA State 3 Idd=55mA State 4 Idd=65mA State 5 Idd=50mA State 6 Idd=46mA 13 12 11 14 Gain State 1 Gain State 2 Gain State 3 Gain State 4 Gain State 5 Gain State 6 NF State 1 NF State 2 NF State 3 NF State 4 NF State 5 NF State 6 12 10 8 6 4 2 0 4 4.5 5 5.5 FREQUENCY (GHz) 1 - 32 6 Gain Noise Figure P1dB FREQUENCY (GHz) 10 3.5 5.5 Gain, Noise Figure & Power vs. Supply Voltage @ 5.5 GHz Output IP3 vs. Temperature 3 5 FREQUENCY (GHz) Gain (dB), Noise Figure (dB), P1dB (dBm) AMPLIFIERS - CHIP 1 6 6.5 3 3.5 4 4.5 5 5.5 6 6.5 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 7 7.5 8 HMC392 v00.1002 MICROWAVE CORPORATION GaAs MMIC LOW NOISE AMPLIFIER, 3.5 - 7.0 GHz Typical Supply Current vs. Vdd Drain Bias Voltage (Vdd) +7.0 Vdc Vdd (Vdc) Idd (mA) RF Input Power (RFin)(Vdd = +5.0 Vdc) +15 dBm +4.5 49 Channel Temperature 175 °C +5.0 50 Continuous Pdiss (T= 85 °C) (derate 8.125 mW/°C above 85 °C) 0.731 W +5.5 51 Thermal Resistance (channel to die bottom) 123 °C/W Storage Temperature -65 to +150 °C Operating Temperature -55 to +85° C (State 5 Depicted) Outline Drawing 1 AMPLIFIERS - CHIP Absolute Maximum Ratings NOTES: 1. ALL DIMENSIONS IN INCHES [MILLIMETERS] 2. ALL TOLERANCES ARE ±0.001 (0.025) 3. DIE THICKNESS IS 0.004 (0.100) BACKSIDE IS GROUND 4. BOND PADS ARE 0.004 (0.100) SQUARE 5. BOND PAD SPACING, CTR-CTR: 0.006 (0.150) 6. BACKSIDE METALLIZATION: GOLD 7. BOND PAD METALLIZATION: GOLD For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 1 - 33 HMC392 v00.1002 MICROWAVE CORPORATION GaAs MMIC LOW NOISE AMPLIFIER, 3.5 - 7.0 GHz Pad Descriptions Pad Number Function Description 2 RF IN This pad is AC coupled and matched to 50 Ohms from 3.5 to 7.0 GHz. AMPLIFIERS - CHIP 1 Interface Schematic Power Select 3 4 PS3 PS4 One of these pads must be connected to ground. See Power Select Table for selection criteria. Power Select One of these pads must be connected to ground. See Power Select Table for selection criteria. 7 8 9 PS7 PS8 PS9 1, 5 Vdd, Vdd (alt.) Power supply voltage. Connect either pad1 or pad5 to +5V supply. No choke inductor or bypass capacitor is needed. 6 RF OUT This pad is AC coupled and matched to 50 Ohms from 3.5 to 7.0 GHz. Die Bottom GND Die bottom must be connected to RF/DC ground. Power Select Table 1 - 34 State Pads Bonded to Ground Typical Idd (mA) Typical P1dB (dBm) 1 PS3 & PS7 75 18.4 2 PS3 & PS8 62 17.9 3 PS3 & PS9 55 16.4 4 PS4 & PS7 65 17.7 5 PS4 & PS8 50 16.9 6 PS4 & PS9 46 15.5 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com HMC392 v00.1002 MICROWAVE CORPORATION GaAs MMIC LOW NOISE AMPLIFIER, 3.5 - 7.0 GHz Assembly Diagram AMPLIFIERS - CHIP 1 Note: State 5 shown. PS3 and PS7 bonded to ground. Handling Precautions Follow these precautions to avoid permanent damage. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool temperature of 265 deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 deg. C. DO NOT expose the chip to a temperature greater than 320 deg. C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 1 - 35