HMC594 v00.0407 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz LOW NOISE AMPLIFIERS - CHIP 1 Typical Applications Features The HMC594 is ideal for: Gain Flatness: ±0.2 dB • Fixed Microwave Noise Figure: 2.6 dB • Point-to-Multi-Point Radios Gain: 10 dB • Test & Measurement Equipment OIP3: +36 dBm • Radar & Sensors DC Supply: +6V @ 100 mA • Military & Space 50 Ohm Matched Input/Output Die Size: 1.32 x 1.21 x 0.10 mm General Description Functional Diagram The HMC594 is a GaAs PHEMT MMIC Low Noise Amplifier (LNA) chip which operates from 2 to 4 GHz. The HMC594 features extremely flat performance characteristics including 10 dB of small signal gain, 2.6 dB of noise figure and output IP3 of +36 dBm across the operating band. This versatile LNA is ideal for hybrid and MCM assemblies due to its compact size, consistent output power and DC blocked RF I/O’s. All data is measured with the chip in a 50 Ohm test fixture connected via one 0.025 mm (1 mil) diameter bondwire of minimal length 0.31 mm (12 mil). Electrical Specifi cations, TA = +25° C, Vdd= +6V, Idd= 100mA* Parameter Min. Frequency Range Gain Typ. 7 Gain Variation Over Temperature dB dB/ °C 2.6 15 Saturated Output Power (Psat) 18 GHz 10 Input Return Loss Output Return Loss 3.5 dB dB 15 dB 21 dBm 22 dBm Output Third Order Intercept (IP3) 36 Supply Current (Idd) 100 dBm 130 *Adjust Vgg between -1.5V to -0.5V to achieve Idd = 100mA 1 - 96 Units 0.015 Noise Figure Output Power for 1 dB Compression (P1dB) Max. 2-4 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com mA HMC594 v00.0407 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz 12 15 10 11 5 S21 S11 S22 0 10 GAIN (dB) RESPONSE (dBm) 1 Gain vs. Temperature -5 -10 -15 9 8 +25C +85C -55C 7 -20 6 -25 -30 5 1 2 3 4 5 6 7 8 2 9 2.25 2.5 FREQUENCY (GHz) Input Return Loss vs. Temperature 3.25 3.5 3.75 4 0 -5 RETURN LOSS (dB) +25C +85C -55C -5 RETURN LOSS (dB) 3 Output Return Loss vs. Temperature 0 -10 -15 -20 +25C +85C -55C -10 -15 -20 -25 -25 -30 2 2.25 2.5 2.75 3 3.25 3.5 3.75 4 2 2.25 2.5 FREQUENCY (GHz) 2.75 3 3.25 3.5 3.75 4 FREQUENCY (GHz) Noise Figure vs. Temperature Reverse Isolation vs. Temperature 10 0 -5 ISOLATION (dB) 8 NOISE FIGURE (dB) 2.75 FREQUENCY (GHz) LOW NOISE AMPLIFIERS - CHIP Broadband Gain & Return Loss +25C +85C -55C 6 4 2 +25C +85C -55C -10 -15 -20 -25 0 -30 2 2.5 3 FREQUENCY (GHz) 3.5 4 2 2.25 2.5 2.75 3 3.25 3.5 3.75 4 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 1 - 97 HMC594 v00.0407 Psat vs. Temperature 26 26 25 25 24 24 23 23 Psat (dBm) P1dB (dBm) P1dB vs. Temperature 22 21 20 19 22 21 20 19 +25C +85C -40C 18 +25C +85C -40C 18 17 17 16 16 2 2.25 2.5 2.75 3 3.25 3.5 3.75 4 2 2.25 2.5 2.75 FREQUENCY (GHz) 3 3.25 3.5 3.75 4 12 14 16 FREQUENCY (GHz) Output IP3 vs. Temperature Power Compression @ 3 GHz 25 40 Pout (dBm), GAIN (dB), PAE (%) 38 36 34 OIP3 (dBm) LOW NOISE AMPLIFIERS - CHIP 1 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz 32 30 +25C +85C -40C 28 26 24 Pout Gain PAE 20 15 10 5 22 20 2 2.25 2.5 2.75 3 3.25 3.5 3.75 0 -10 -8 4 -6 -4 FREQUENCY (GHz) -2 0 2 4 6 8 10 INPUT POWER (dBm) GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) Gain, Noise Figure & Power vs. Supply Voltage @ 3 GHz 40 35 Gain P1dB Psat OIP3 30 25 20 15 10 5 5.5 6 6.5 Vdd SUPPLY VOLTAGE (Vdc) 1 - 98 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC594 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz Typical Supply Current vs. Vdd Absolute Maximum Ratings Drain Bias Voltage (Vdd) +7 Vdc RF Input Power (RFIN)(Vdd = +6.0 Vdc) +15 dBm Channel Temperature 175 °C Continuous Pdiss (T= 85 °C) (derate 11.7 mW/°C above 85 °C) 0.76 W Thermal Resistance (channel to die bottom) 85 °C/W Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C Vdd (Vdc) Idd (mA) +5.5 97 +6.0 100 +6.5 103 Note: Amplifi er will operate over full voltage ranges shown above. ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing Die Packaging Information [1] Standard Alternate GP-1 (Gel Pack) [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 1 LOW NOISE AMPLIFIERS - CHIP v00.0407 NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004” 3. TYPICAL BOND IS .004” SQUARE 4. BACKSIDE METALLIZATION: GOLD 5. BOND PAD METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 1 - 99 HMC594 v00.0407 LOW NOISE AMPLIFIERS - CHIP 1 1 - 100 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz Pad Descriptions Pad Number Function Description GND This pad and die bottom must be connected to RF/DC ground. 2 RFIN This pad is AC coupled and matched to 50 Ohms from 2 - 4 GHz. 5 Vdd Power Supply Voltage for the amplifier. External bypass capacitors of 100 pF and 0.1 μF are required. 7 RFOUT This pad is AC coupled and matched to 50 Ohms from 2 - 4 GHz. 8 Vgg Gate supply voltage for the amplifier. External bypass capacitors of 100 pF and 0.1 μF are required. 1, 3, 4, 6 Die Bottom Interface Schematic Assembly Diagram For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC594 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane Microstrip substrates should be brought as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm (3 mils). Handling Precautions 0.127mm (0.005”) Thick Alumina Thin Film Substrate Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Figure 1. 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane 1 LOW NOISE AMPLIFIERS - CHIP v00.0407 0.150mm (0.005”) Thick Moly Tab Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire is recommended. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31 mm (12 mils). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 1 - 101