PD -90902B
IRF640S/L
HEXFET® Power MOSFET
l
l
l
l
l
l
l
Surface Mount (IRF640S)
Low-profile through-hole (IRF640L)
Available in Tape & Reel (IRF640S)
Dynamic dv/dt Rating
150°C Operating Temperature
Fast Switching
Fully Avalanche Rated
D
VDSS = 200V
RDS(on) = 0.18Ω
G
ID = 18A
S
Description
Third Generation HEXFETs from International Rectifier provide
the designer with the best combinations of fast switching ,
ruggedized device design, low on-resistance and costeffectiveness.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in any
existing surface mount package. The D2Pak is suitable for high
current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface
mount application.The through-hole version (IRF640L) is
available for low-profile applications.
D 2 P ak
T O -26 2
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Max.
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
18
11
72
3.1
130
1.0
± 20
580
18
13
5.0
-55 to + 175
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
RθJC
RθJA
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Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
Typ.
Max.
Units
–––
–––
1.0
40
°C/W
1
7/20/99
IRF640S/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
200
–––
–––
2.0
6.7
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.29
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
14
51
45
36
LS
Internal Source Inductance
–––
7.5
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
1300
430
130
V(BR)DSS
IDSS
IGSS
Drain-to-Source Leakage Current
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
0.18
Ω
VGS = 10V, ID = 11A
4.0
V
VDS = V GS, ID = 250µA
–––
S
VDS = 50V, ID = 11A
25
VDS = 200V, VGS = 0V
µA
250
VDS = 160V, VGS = 0V, TJ = 125°C
100
VGS = 20V
nA
-100
VGS = -20V
70
ID = 18A
13
nC VDS =160V
39
VGS = 10V, See Fig. 6 and 13
–––
VDD =100V
–––
ID = 18A
ns
–––
RG = 9.1Ω
–––
RD = 5.4Ω, See Fig. 10
Between lead,
nH
–––
and center of die contact
–––
VGS = 0V
–––
pF
VDS = 25V
–––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– 18
showing the
A
G
integral reverse
––– ––– 72
S
p-n junction diode.
––– ––– 2.0
V
TJ = 25°C, IS = 18A, VGS = 0V
––– 300 610
ns
TJ = 25°C, IF = 18A
––– 3.4 7.1
µC
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )
VDD = 50V, starting TJ = 25°C, L = 2.7mH
Uses IRF640 data and test conditions
RG = 25Ω, IAS = 18A. (See Figure 12)
ISD ≤ 18A, di/dt ≤ 150A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
2
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IRF640S/L
Fig 1. Typical Output Characteristics,
TJ = 25oC
Fig 3. Typical Transfer Characteristics
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Fig 2. Typical Output Characteristics,
TJ = 175oC
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF640S/L
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 8. Maximum Safe Operating Area
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IRF640S/L
VDS
VGS
RD
D.U.T.
RG
+
-VDD
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on)
Fig 9. Maximum Drain Current Vs.
Case Temperature
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF640S/L
1 5V
L
VDS
D .U .T
RG
IA S
20V
D R IV E R
+
V
- DD
A
0 .0 1 Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D SS
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.2µF
.3µF
10 V
QGS
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
6
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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IRF640S/L
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
•
•
•
•
RG
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Driver Gate Drive
P.W.
D=
Period
+
-
VDD
P.W.
Period
VGS=10V
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
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7
IRF640S/L
D2Pak Package Outline
1 0.54 (.4 15)
1 0.29 (.4 05)
1.4 0 (.055 )
M AX.
-A-
1.3 2 (.05 2)
1.2 2 (.04 8)
2
1.7 8 (.07 0)
1.2 7 (.05 0)
1
1 0.16 (.4 00 )
RE F.
-B -
4.69 (.1 85)
4.20 (.1 65)
6.47 (.2 55 )
6.18 (.2 43 )
3
15 .4 9 (.6 10)
14 .7 3 (.5 80)
2.7 9 (.110 )
2.2 9 (.090 )
2.61 (.1 03 )
2.32 (.0 91 )
5 .28 (.20 8)
4 .78 (.18 8)
3X
1.40 (.0 55)
1.14 (.0 45)
5 .08 (.20 0)
0.5 5 (.022 )
0.4 6 (.018 )
0 .93 (.03 7 )
3X
0 .69 (.02 7 )
0 .25 (.01 0 )
M
8.8 9 (.3 50 )
R E F.
1.3 9 (.0 5 5)
1.1 4 (.0 4 5)
B A M
M IN IM U M R E CO M M E ND E D F O O TP R IN T
1 1.43 (.4 50 )
NO TE S:
1 D IM EN S IO N S A FTER SO L D ER D IP.
2 D IM EN S IO N IN G & TO LE RA N C IN G PE R A N S I Y1 4.5M , 198 2.
3 C O N TRO L LIN G D IM EN SIO N : IN C H .
4 H E ATSINK & L EA D D IM EN S IO N S D O N O T IN C LU D E B UR R S.
LE A D A SS IG N M E N TS
1 - G A TE
2 - D R AIN
3 - S O U RC E
8.89 (.3 50 )
17 .78 (.70 0)
3 .8 1 (.15 0)
2 .08 (.08 2)
2X
2.5 4 (.100 )
2X
Part Marking Information
D2Pak
IN TE R N A TIO N A L
R E C T IF IE R
LO G O
A S S E M B LY
LO T C O D E
8
A
PART NUM BER
F530S
9 24 6
9B
1M
DATE CODE
(Y YW W )
YY = Y E A R
W W = W EEK
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IRF640S/L
Package Outline
TO-262 Outline
Part Marking Information
TO-262
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9
IRF640S/L
Tape & Reel Information
D2Pak
TR R
1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
4 .1 0 (.1 6 1 )
3 .9 0 (.1 5 3 )
F E E D D IRE CTIO N 1 .8 5 (.0 7 3 )
1 .6 5 (.0 6 5 )
1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
1 1.6 0 (.4 57 )
1 1.4 0 (.4 49 )
0 .3 6 8 (.0 1 4 5 )
0 .3 4 2 (.0 1 3 5 )
1 5.4 2 (.6 0 9 )
1 5.2 2 (.6 0 1 )
2 4 .3 0 (.9 5 7 )
2 3 .9 0 (.9 4 1 )
TR L
1 0.9 0 (.4 2 9 )
1 0.7 0 (.4 2 1 )
1 .7 5 (.0 6 9 )
1 .2 5 (.0 4 9 )
4 .7 2 (.1 3 6)
4 .5 2 (.1 7 8)
1 6 .1 0 (.6 3 4 )
1 5 .9 0 (.6 2 6 )
F E E D D IRE CTIO N
13 .5 0 (.53 2)
12 .8 0 (.50 4)
27 .40 (1.0 79)
23 .90 (.94 1)
4
3 30 .0 0
(14.1 73)
MAX.
NO TES :
1. C O M F O R M S T O E IA-4 18.
2. C O N TR O LL IN G D IM E N S IO N : M IL LIM E T E R .
3. D IM E N S IO N M E A SU R E D @ H U B .
4. IN C LU D E S F L AN G E D IS T O R T IO N @ O U TE R E D G E.
60.00 (2.3 62)
M IN .
26 .40 (1 .03 9)
24 .40 (.9 61 )
3
30 .40 (1.19 7)
MAX.
4
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/
Data and specifications subject to change without notice.
7/99
10
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