PD -91340A
IRF520NS/L
HEXFET® Power MOSFET
l
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Advanced Process Technology
Surface Mount (IRF520NS)
Low-profile through-hole (IRF520NL)
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
D
VDSS = 100V
RDS(on) = 0.20Ω
G
ID = 9.7A
S
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
The D2Pak is a surface mount power package capable of accommodating die
sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The D2Pak is
suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRF520NL) is available for low-profile applications.
D 2 P ak
T O -26 2
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Max.
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
9.7
6.8
38
3.8
48
0.32
± 20
91
5.7
4.8
5.0
-55 to + 175
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
RθJC
RθJA
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
Typ.
Max.
Units
–––
–––
3.1
40
°C/W
5/13/98
IRF520NS/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
100
–––
–––
2.0
2.7
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
IDSS
Drain-to-Source Leakage Current
LS
Internal Source Inductance
–––
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
V(BR)DSS
∆V(BR)DSS/∆TJ
IGSS
Typ.
–––
0.11
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
4.5
23
32
23
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
0.20
Ω
VGS = 10V, ID = 5.7A
4.0
V
VDS = V GS, ID = 250µA
–––
S
VDS = 25V, ID = 5.7A
25
VDS = 100V, VGS = 0V
µA
250
VDS = 80V, VGS = 0V, TJ = 150°C
100
VGS = 20V
nA
-100
VGS = -20V
25
ID = 5.7A
4.8
nC
VDS = 80V
11
VGS = 10V, See Fig. 6 and 13
–––
VDD = 50V
–––
ID = 5.7A
ns
–––
RG = 22Ω
–––
RD = 8.6Ω, See Fig. 10
Between lead,
nH
7.5 –––
and center of die contact
330 –––
VGS = 0V
92 –––
pF
VDS = 25V
54 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– 9.7
showing the
A
G
integral reverse
––– ––– 38
S
p-n junction diode.
––– ––– 1.3
V
TJ = 25°C, IS = 5.7A, VGS = 0V
––– 99 150
ns
TJ = 25°C, IF = 5.7A
––– 390 580
nC
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )
VDD = 25V, starting TJ = 25°C, L = 4.7mH
Uses IRF520N data and test conditions
RG = 25Ω, IAS = 5.7A. (See Figure 12)
ISD ≤ 5.7A, di/dt ≤ 240A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
** When mounted on FR-4 board using minimum recommended footprint.
For recommended footprint and soldering techniques refer to application note #AN-994.
IRF520NS/L
100
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BO TTOM 4.5V
10
4 .5V
2 0µ s P U L S E W IDTH
T C = 25 °C
1
0.1
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
I , D rain-to-Source Current (A )
D
I , D ra in-to -S o urc e C u rren t (A )
D
TO P
1
10
A
10
4 .5V
2 0µ s P U L S E W ID TH
T C = 17 5°C
1
100
0.1
1
V D S , D rain-to-S ource V oltage (V )
Fig 2. Typical Output Characteristics
3.0
R D S (on) , Drain-to-S ource O n Resistance
(N orm alized)
I D , D rain-to-So urce C urren t (A )
100
TJ = 25 °C
TJ = 1 7 5°C
V DS = 5 0V
2 0µ s P U L S E W ID TH
1
4
5
6
7
8
9
A
100
V DS , D rain-to-S ource V oltage (V )
Fig 1. Typical Output Characteristics
10
10
10
V G S , G ate-to -So urce Voltag e (V)
Fig 3. Typical Transfer Characteristics
A
I D = 9 .5A
2.5
2.0
1.5
1.0
0.5
V G S = 10 V
0.0
-60
-40
-20
0
20
40
60
80
A
100 120 140 160 180
T J , Junction T em perature (°C )
Fig 4. Normalized On-Resistance
Vs. Temperature
IRF520NS/L
V GS
C is s
C rs s
C o ss
500
C , Capacitance (pF)
C iss
=
=
=
=
20
0V ,
f = 1M H z
C g s + C g d , Cd s S H O R T E D
C gd
C d s + C gd
V G S , G ate-to-S ource V oltage (V )
600
I D = 5.7 A
16
400
12
C oss
300
200
C rss
100
0
10
8
4
FO R TE S T C IR C U IT
S E E FIG U R E 1 3
0
A
1
100
0
V D S , D rain-to-S ourc e V oltage (V )
5
10
15
20
A
25
Q G , T otal G ate C harge (nC )
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
O P E R A TIO N IN TH IS A R E A LIM ITE D
B Y R D S (o n)
10µs
I D , Drain C urrent (A )
I SD , Reverse D rain C urrent (A)
V D S = 80 V
V D S = 50 V
V D S = 20 V
TJ = 17 5°C
10
TJ = 2 5°C
V G S = 0V
1
0.4
0.6
0.8
1.0
1.2
V S D , S ourc e-to-D rain V oltage (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
A
1.4
10
100µ s
1m s
1
10m s
T C = 25 °C
T J = 17 5°C
S ing le P u lse
0.1
1
10
100
A
1000
V D S , D rain-to-S ource V oltage (V )
Fig 8. Maximum Safe Operating Area
IRF520NS/L
VDS
RD
10.0
VGS
D.U.T.
RG
+
I D , Drain Current (A)
8.0
-VDD
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
6.0
Fig 10a. Switching Time Test Circuit
4.0
VDS
2.0
90%
0.0
25
50
75
100
125
150
175
TC , Case Temperature ( °C)
10%
VGS
td(on)
Fig 9. Maximum Drain Current Vs.
Case Temperature
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
D = 0.50
1
0.20
0.10
0.05
0.1
0.01
0.00001
0.02
0.01
P DM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.1
IRF520NS/L
1 5V
L
VDS
D .U .T
RG
IA S
20V
D R IV E R
+
V
- DD
0 .0 1 Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
A
E A S , S ingle P ulse A valanche E nergy (m J)
200
TO P
B O TTO M
160
ID
2 .3 A
4.0 A
5 .7A
120
80
40
0
V D D = 25 V
25
V (B R )D SS
50
A
75
100
125
150
S tarting T J , J unc tion T em perature (°C )
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.2µF
.3µF
10 V
QGS
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
175
IRF520NS/L
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
•
•
•
•
RG
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Driver Gate Drive
P.W.
D=
Period
+
-
VDD
P.W.
Period
VGS=10V
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
ISD
*
IRF520NS/L
D2Pak Package Outline
1 0.54 (.4 15)
1 0.29 (.4 05)
1.4 0 (.055 )
M AX.
-A-
1.3 2 (.05 2)
1.2 2 (.04 8)
2
1.7 8 (.07 0)
1.2 7 (.05 0)
1
1 0.16 (.4 00 )
RE F.
-B -
4.69 (.1 85)
4.20 (.1 65)
6.47 (.2 55 )
6.18 (.2 43 )
3
15 .4 9 (.6 10)
14 .7 3 (.5 80)
2.7 9 (.110 )
2.2 9 (.090 )
2.61 (.1 03 )
2.32 (.0 91 )
5 .28 (.20 8)
4 .78 (.18 8)
3X
1.40 (.0 55)
1.14 (.0 45)
5 .08 (.20 0)
0.5 5 (.022 )
0.4 6 (.018 )
0 .93 (.03 7 )
3X
0 .69 (.02 7 )
0 .25 (.01 0 )
M
8.8 9 (.3 50 )
R E F.
1.3 9 (.0 5 5)
1.1 4 (.0 4 5)
B A M
M IN IM U M R E CO M M E ND E D F O O TP R IN T
1 1.43 (.4 50 )
NO TE S:
1 D IM EN S IO N S A FTER SO L D ER D IP.
2 D IM EN S IO N IN G & TO LE RA N C IN G PE R A N S I Y1 4.5M , 198 2.
3 C O N TRO L LIN G D IM EN SIO N : IN C H .
4 H E ATSINK & L EA D D IM EN S IO N S D O N O T IN C LU D E B UR R S.
LE A D A SS IG N M E N TS
1 - G A TE
2 - D R AIN
3 - S O U RC E
8.89 (.3 50 )
17 .78 (.70 0)
3 .8 1 (.15 0)
2 .08 (.08 2)
2X
Part Marking Information
D2Pak
IN TE R N A TIO N A L
R E C T IF IE R
LO G O
A S S E M B LY
LO T C O D E
A
PART NUM BER
F530S
9 24 6
9B
1M
DATE CODE
(Y YW W )
YY = Y E A R
W W = W EEK
2.5 4 (.100 )
2X
IRF520NS/L
Package Outline
TO-262 Outline
Part Marking Information
TO-262
IRF520NS/L
Tape & Reel Information
D2Pak
TR R
1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
4 .1 0 (.1 6 1 )
3 .9 0 (.1 5 3 )
F E E D D IRE CTIO N 1 .8 5 (.0 7 3 )
1 .6 5 (.0 6 5 )
1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
1 1.6 0 (.4 57 )
1 1.4 0 (.4 49 )
0 .3 6 8 (.0 1 4 5 )
0 .3 4 2 (.0 1 3 5 )
1 5.4 2 (.6 0 9 )
1 5.2 2 (.6 0 1 )
2 4 .3 0 (.9 5 7 )
2 3 .9 0 (.9 4 1 )
TR L
1 0.9 0 (.4 2 9 )
1 0.7 0 (.4 2 1 )
1 .7 5 (.0 6 9 )
1 .2 5 (.0 4 9 )
4 .7 2 (.1 3 6)
4 .5 2 (.1 7 8)
1 6 .1 0 (.6 3 4 )
1 5 .9 0 (.6 2 6 )
F E E D D IRE CTIO N
13 .5 0 (.53 2)
12 .8 0 (.50 4)
27 .40 (1.0 79)
23 .90 (.94 1)
4
3 30 .0 0
(14.1 73)
MAX.
NO TES :
1. C O M F O R M S T O E IA-4 18.
2. C O N TR O LL IN G D IM E N S IO N : M IL LIM E T E R .
3. D IM E N S IO N M E A SU R E D @ H U B .
4. IN C LU D E S F L AN G E D IS T O R T IO N @ O U TE R E D G E.
60.00 (2.3 62)
M IN .
26 .40 (1 .03 9)
24 .40 (.9 61 )
3
30 .40 (1.19 7)
MAX.
4
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
5/98