MOTOROLA MC74HCT574ADW

SEMICONDUCTOR TECHNICAL DATA
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High–Performance Silicon–Gate CMOS
The MC54/74HCT574A is identical in pinout to the LS574. This device
may be used as a level converter for interfacing TTL or NMOS outputs to
High Speed CMOS inputs.
Data meeting the setup time is clocked to the outputs with the rising
edge of the Clock. The Output Enable input does not affect the states of
the flip–flops, but when Output Enable is high, all device outputs are
forced to the high–impedance state. Thus, data may be stored even when
the outputs are not enabled.
The HCT574A is identical in function to the HCT374A but has the
flip–flop inputs on the opposite side of the package from the outputs to
facilitate PC board layout.
J SUFFIX
CERAMIC PACKAGE
CASE 732–03
20
1
N SUFFIX
PLASTIC PACKAGE
CASE 738–03
20
1
1
ORDERING INFORMATION
•
•
•
•
•
•
Output Drive Capability: 15 LSTTL Loads
TTL NMOS Compatible Input Levels
Outputs Directly Interface to CMOS, NMOS and TTL
Operating Voltage Range: 4.5 to 5.5 V
Low Input Current: 1.0 µA
In Compliance with the Requirements Defined by JEDEC Standard
No. 7A
• Chip Complexity: 286 FETs or 71.5 Equivalent Gates
MC54HCTXXXAJ
MC74HCTXXXAN
MC74HCTXXXADW
D1
D2
DATA
INPUTS
D3
D4
D5
D6
D7
2
19
3
18
4
17
5
16
6
15
7
14
8
13
9
12
OUTPUT
ENABLE
D0
1
20
VCC
2
19
Q0
Q0
Q1
OUTPUT ENABLE
3
18
Q1
4
17
Q2
D3
5
16
Q3
D4
6
15
Q4
7
14
Q5
D6
8
13
Q6
Q5
D7
9
12
Q7
Q6
GND
10
11
CLOCK
Q3
Q4
NON–
INVERTING
OUTPUTS
Q7
11
1
Design Criteria
PIN 20 = VCC
PIN 10 = GND
Value
Units
Internal Gate Count*
71.5
ea
Internal Gate Propagation Delay
1.5
ns
Internal Gate Power Dissipation
5.0
µW
0.0075
pJ
Speed Power Product
FUNCTION TABLE
Inputs
OE
L
L
L
H
10/95
3–1
REV 6
Output
Clock
D
Q
L,H,
X
H
L
X
X
H
L
No Change
Z
X = don’t care
Z = high impedance
* Equivalent to a two–input NAND gate.
 Motorola, Inc. 1995
D1
D2
D5
Q2
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CLOCK
Ceramic
Plastic
SOIC
PIN ASSIGNMENT
LOGIC DIAGRAM
D0
DW SUFFIX
SOIC PACKAGE
CASE 751D–04
20
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MC54/74HCT574A
MAXIMUM RATINGS*
Symbol
VCC
Parameter
DC Supply Voltage (Referenced to GND)
Value
Unit
– 0.5 to + 7.0
V
V
Vin
DC Input Voltage (Referenced to GND)
– 1.5 to VCC + 1.5
Vout
DC Output Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
DC Input Current, per Pin
± 20
mA
Iout
DC Output Current, per Pin
± 35
mA
ICC
DC Supply Current, VCC and GND Pins
± 75
mA
PD
Power Dissipation in Still Air, Plastic or Ceramic DIP†
SOIC Package†
750
500
mW
Tstg
Storage Temperature
– 65 to + 150
_C
Iin
TL
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high–impedance circuit. For proper operation, Vin and
Vout should be constrained to the
range GND (Vin or Vout) VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
v
v
_C
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP or SOIC Package)
(Ceramic DIP)
260
300
* Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C
Ceramic DIP: – 10 mW/_C from 100_ to 125_C
SOIC Package: – 7 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
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RECOMMENDED OPERATING CONDITIONS
Symbol
VCC
Vin, Vout
Parameter
Min
Max
Unit
4.5
5.5
V
0
VCC
V
– 55
+ 125
_C
0
500
ns
DC Supply Voltage (Referenced to GND)
DC Input Voltage, Output Voltage (Referenced to GND)
TA
Operating Temperature, All Package Types
tr, tf
Input Rise and Fall Time (Figure 1)
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
Symbol
Parameter
Test Conditions
VCC
V
– 55 to
25_C
85_C
125_C
Unit
VIH
Minimum High–Level Input
Voltage
Vout = 0.1 V or VCC – 0.1 V
|Iout|
20 µA
4.5
5.5
2.0
2.0
2.0
2.0
2.0
2.0
V
VIL
Maximum Low–Level Input
Voltage
Vout = 0.1 V or VCC – 0.1 V
|Iout|
20 µA
4.5
5.5
0.8
0.8
0.8
0.8
0.8
0.8
V
Minimum High–Level Output
Voltage
Vin = VIH or VIL
|Iout|
20 µA
4.5
5.5
4.4
5.4
4.4
5.4
4.4
5.4
Vin = VIH or VIL
|Iout|
6.0 mA
4.5
3.98
3.84
3.7
Vin = VIH or VIL
|Iout|
20 µA
4.5
5.5
0.1
0.1
0.1
0.1
0.1
0.1
Vin = VIH or VIL
|Iout|
6.0 mA
4.5
0.26
0.33
0.4
Maximum Input Leakage Current
Vin = VCC or GND
5.5
± 0.1
± 1.0
± 1.0
µA
Maximum Quiescent Supply
Current (per Package)
Vin = VCC or GND
Iout = 0 µA
5.5
4.0
40
160
µA
VOH
VOL
Iin
ICC
Maximum Low–Level Output
Voltage
V
1. Output in high–impedance state.
NOTE: Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
MOTOROLA
3–2
High–Speed CMOS Logic Data
DL129 — Rev 6
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MC54/74HCT574A
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
Symbol
Parameter
IOZ
Maximum Three–State Leakage
Current
Vin = VIL or VIH (Note 1)
Vout = VCC or GND
Additional Quiescent Supply
Current
Vin = 2.4 V, Any One Input
Vin = VCC or GND, Other Inputs
lout = 0 µA
∆ICC
Test Conditions
VCC
V
– 55 to
25_C
5.5
– 0.5
85_C
125_C
– 5.0
≥ – 55_C
25_C to 125_C
2.9
2.4
5.5
Unit
µA
– 10
mA
1. Output in high–impedance state.
AC ELECTRICAL CHARACTERISTICS (VCC = 5.0 V ± 10%, CL = 50 pF, Input tr = tf = 6.0 ns)
Guaranteed Limit
– 55 to
25_C
85_C
125_C
Unit
fMAX
Maximum Clock Frequency (50% Duty Cycle) (Figures 1 and 4)
30
24
20
MHz
tPLH,
tPHL
Maximum Propagation Delay, Clock to Q
(Figures 1 and 4)
30
38
45
ns
tPLZ,
tPHZ
Maximum Propagation Delay, Output Enable to Q
(Figures 2 and 5)
28
35
42
ns
tPZH,
tPZL
Maximum Propagation Delay Time, Output Enable to Q
(Figures 2 and 5)
28
35
42
ns
tTLH,
Maximum Output Transition Time, Any Output
(Figures 1, 2 and 4)
12
15
18
ns
Maximum Input Capacitance
10
10
10
pF
Symbol
Parameter
tTHL
Cin
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the Motorola High–
Speed CMOS Data Book (DL129/D).
Typical @ 25°C, VCC = 5.0 V
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CPD
Power Dissipation Capacitance (Per Flip–Flop)*
pF
58
* Used to determine the no–load dynamic power consumption: PD = CPD VCC 2 f + ICC VCC . For load considerations, see Chapter 2 of the
Motorola High–Speed CMOS Data Book (DL129/D).
TIMING REQUIREMENTS (VCC = 5.0 V ± 10%, CL = 50 pF, Input tr = tf = 6.0 ns)
Guaranteed Limit
– 55 to 25_C
Fig.
Min
Minimum Setup Time, Data to Clock
3
10
13
15
ns
th
Minimum Hold Time, Clock to Data
3
5.0
5.0
5.0
ns
tw
Minimum Pulse Width, Clock
1
15
Maximum Input Rise and Fall Times
1
tr, If
Parameter
High–Speed CMOS Logic Data
DL129 — Rev 6
3–3
Min
Max
125_C
tsu
Symbol
Max
85_C
19
500
Min
Max
22
500
Unit
ns
500
ns
MOTOROLA
MC54/74HCT574A
EXPANDED LOGIC DIAGRAM
D0
2
CLOCK
D2
4
D3
5
D4
6
D5
7
D6
8
D7
9
11
D
C
C
Q
ENABLE
OUTPUT
D1
3
D
C
Q
D
C
Q
D
C
Q
D
D
C
Q
C
Q
D
D
C
Q
Q
1
19
Q0
18
17
Q1
16
Q2
15
Q3
14
Q4
13
Q5
Q6
12
Q7
SWITCHING WAVEFORMS
tr
tf
3.0 V
3.0 V
2.7 V
1.3 V
0.3 V
tw
CLOCK
OUTPUT
ENABLE
GND
1.3 V
GND
tPZL
1/fmax
tPLH
Q
tPZH
90%
1.3 V
10%
Q
tTLH
HIGH
IMPEDANCE
1.3 V
Q
tPHL
tPLZ
tPHZ
10%
VOL
90%
VOH
1.3 V
HIGH
IMPEDANCE
tTHL
Figure 1.
Figure 2.
TEST POINT
VALID
OUTPUT
3.0 V
DEVICE
UNDER
TEST
1.3 V
DATA
GND
tsu
th
CL*
3.0 V
1.3 V
GND
CLOCK
* Includes all probe and jig capacitance
Figure 3.
Figure 4. Test Circuit
TEST POINT
OUTPUT
DEVICE
UNDER
TEST
1 kΩ
CL*
CONNECT TO VCC WHEN
TESTING tPLZ AND tPZL.
CONNECT TO GND WHEN
TESTING tPHZ AND tPZH.
* Includes all probe and jig capacitance
Figure 5. Test Circuit
MOTOROLA
3–4
High–Speed CMOS Logic Data
DL129 — Rev 6
MC54/74HCT574A
OUTLINE DIMENSIONS
20
11
1
10
J SUFFIX
CERAMIC PACKAGE
CASE 732–03
ISSUE E
NOTES:
1. LEADS WITHIN 0.25 (0.010) DIAMETER, TRUE
POSITION AT SEATING PLANE, AT MAXIMUM
MATERIAL CONDITION.
2. DIMENSION L TO CENTER OF LEADS WHEN
FORMED PARALLEL.
3. DIMENSIONS A AND B INCLUDE MENISCUS.
B
A
L
C
F
DIM
A
B
C
D
F
G
H
J
K
L
M
N
N
H
G
D
J
K
M
MILLIMETERS
MIN
MAX
23.88
25.15
6.60
7.49
3.81
5.08
0.38
0.56
1.40
1.65
2.54 BSC
0.51
1.27
0.20
0.30
3.18
4.06
7.62 BSC
0_
15 _
0.25
1.02
INCHES
MIN
MAX
0.940
0.990
0.260
0.295
0.150
0.200
0.015
0.022
0.055
0.065
0.100 BSC
0.020
0.050
0.008
0.012
0.125
0.160
0.300 BSC
0_
15_
0.010
0.040
SEATING
PLANE
N SUFFIX
PLASTIC PACKAGE
CASE 738–03
ISSUE E
–A–
20
11
1
10
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEAD WHEN
FORMED PARALLEL.
4. DIMENSION B DOES NOT INCLUDE MOLD
FLASH.
B
L
C
–T–
DIM
A
B
C
D
E
F
G
J
K
L
M
N
K
SEATING
PLANE
M
N
E
G
F
J
D
0.25 (0.010)
M
T A
11
–B–
10X
P
0.010 (0.25)
1
M
B
M
10
20X
D
0.010 (0.25)
M
T A
B
S
J
S
F
R X 45 _
C
–T–
18X
G
High–Speed CMOS Logic Data
DL129 — Rev 6
K
SEATING
PLANE
M
T B
M
M
DW SUFFIX
PLASTIC SOIC PACKAGE
CASE 751D–04
ISSUE E
–A–
20
20 PL
0.25 (0.010)
20 PL
INCHES
MIN
MAX
1.010
1.070
0.240
0.260
0.150
0.180
0.015
0.022
0.050 BSC
0.050
0.070
0.100 BSC
0.008
0.015
0.110
0.140
0.300 BSC
0_
15 _
0.020
0.040
MILLIMETERS
MIN
MAX
25.66
27.17
6.10
6.60
3.81
4.57
0.39
0.55
1.27 BSC
1.27
1.77
2.54 BSC
0.21
0.38
2.80
3.55
7.62 BSC
0_
15_
0.51
1.01
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.150
(0.006) PER SIDE.
5. DIMENSION D DOES NOT INCLUDE
DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE 0.13
(0.005) TOTAL IN EXCESS OF D DIMENSION
AT MAXIMUM MATERIAL CONDITION.
DIM
A
B
C
D
F
G
J
K
M
P
R
MILLIMETERS
MIN
MAX
12.65
12.95
7.40
7.60
2.35
2.65
0.35
0.49
0.50
0.90
1.27 BSC
0.25
0.32
0.10
0.25
0_
7_
10.05
10.55
0.25
0.75
INCHES
MIN
MAX
0.499
0.510
0.292
0.299
0.093
0.104
0.014
0.019
0.020
0.035
0.050 BSC
0.010
0.012
0.004
0.009
0_
7_
0.395
0.415
0.010
0.029
M
3–5
MOTOROLA
MC54/74HCT574A
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*MC54/74HCT574A/D*
3–6
MC54/74HCT574A/D
High–Speed CMOS Logic Data
DL129 — Rev 6