MOTOROLA 74273

SEMICONDUCTOR TECHNICAL DATA
! High–Performance Silicon–Gate CMOS
The MC54/74HC273A is identical in pinout to the LS273. The device
inputs are compatible with standard CMOS outputs; with pullup resistors,
they are compatible with LSTTL outputs.
This device consists of eight D flip–flops with common Clock and Reset
inputs. Each flip–flop is loaded with a low–to–high transition of the Clock
input. Reset is asynchronous and active low.
J SUFFIX
CERAMIC PACKAGE
CASE 732–03
20
1
N SUFFIX
PLASTIC PACKAGE
CASE 738–03
20
•
•
•
•
•
•
Output Drive Capability: 10 LSTTL Loads
Outputs Directly Interface to CMOS, NMOS and TTL
Operating Voltage Range: 2.0 to 6.0 V
Low Input Current: 1.0 µA
High Noise Immunity Characteristic of CMOS Devices
In Compliance with the Requirements Defined by JEDEC Standard
No. 7A
• Chip Complexity: 264 FETs or 66 Equivalent Gates
1
DW SUFFIX
SOIC PACKAGE
CASE 751D–04
20
1
DT SUFFIX
TSSOP PACKAGE
CASE 948E–02
20
1
ORDERING INFORMATION
MC54HCXXXAJ
MC74HCXXXAN
MC74HCXXXADW
MC74HCXXXADT
LOGIC DIAGRAM
D0
D1
D2
DATA
INPUTS
D3
D4
D5
D6
D7
CLOCK
3
2
4
5
7
6
8
9
13
12
14
17
15
16
18
19
11
1
Q0
Q1
PIN ASSIGNMENT
Q2
Q3
RESET
1
20
VCC
Q0
2
19
Q7
Q5
D0
3
18
D7
Q6
D1
4
17
D6
Q7
Q1
5
16
Q6
Q2
6
15
Q5
D2
7
14
D5
D3
8
13
D4
Q3
9
12
Q4
10
11
CLOCK
Q4
NONINVERTING
OUTPUTS
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RESET
Design Criteria
PIN 20 = VCC
PIN 10 = GND
Value
Units
Internal Gate Count*
66
ea
Internal Gate Propagation Delay
1.5
ns
Internal Gate Power Dissipation
5.0
µW
.0075
pJ
Speed Power Product
GND
FUNCTION TABLE
Inputs
* Equivalent to a two–input NAND gate.
10/95
 Motorola, Inc. 1995
Ceramic
Plastic
SOIC
TSSOP
3–1
REV 6
Output
Reset
Clock
D
Q
L
H
H
H
H
X
X
H
L
X
X
L
H
L
No Change
No Change
L
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MC54/74HC273A
MAXIMUM RATINGS*
Symbol
VCC
Parameter
DC Supply Voltage (Referenced to GND)
Value
Unit
– 0.5 to + 7.0
V
V
Vin
DC Input Voltage (Referenced to GND)
– 1.5 to VCC + 1.5
Vout
DC Output Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
DC Input Current, per Pin
± 20
mA
Iout
DC Output Current, per Pin
± 25
mA
ICC
DC Supply Current, VCC and GND Pins
± 50
mA
PD
Power Dissipation in Still Air, Plastic or Ceramic DIP†
SOIC Package†
TSSOP Package†
750
500
450
mW
Tstg
Storage Temperature
– 65 to + 150
_C
Iin
TL
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high–impedance circuit. For proper operation, Vin and
Vout should be constrained to the
range GND (Vin or Vout) VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
v
v
_C
Lead Temperature, 1 mm from Case for 10 Seconds
Plastic DIP, SOIC or TSSOP Package
(Ceramic DIP)
260
300
* Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C
Ceramic DIP: – 10 mW/_C from 100_ to 125_C
SOIC Package: – 7 mW/_C from 65_ to 125_C
TSSOP Package: – 6.1 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
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RECOMMENDED OPERATING CONDITIONS
Symbol
VCC
Vin, Vout
Parameter
Min
Max
Unit
2.0
6.0
V
0
VCC
V
– 55
+ 125
_C
0
0
0
1000
500
400
ns
DC Supply Voltage (Referenced to GND)
DC Input Voltage, Output Voltage (Referenced to GND)
TA
Operating Temperature, All Package Types
tr, tf
Input Rise and Fall Time
(Figure 1)
VCC = 2.0 V
VCC = 4.5 V
VCC = 6.0 V
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
Symbol
Parameter
Test Conditions
VCC
V
– 55 to
25_C
85_C
125_C
Unit
VIH
Minimum High–Level Input
Voltage
Vout = 0.1 V or VCC – 0.1 V
|Iout|
20 µA
2.0
4.5
6.0
1.5
3.15
4.2
1.5
3.15
4.2
1.5
3.15
4.2
V
VIL
Maximum Low–Level Input
Voltage
Vout = 0.1 V or VCC – 0.1 V
|Iout|
20 µA
2.0
4.5
6.0
0.5
1.35
1.8
0.5
1.35
1.8
0.5
1.35
1.8
V
Minimum High–Level Output
Voltage
Vin = VIH or VIL
|Iout|
20 µA
2.0
4.5
6.0
1.9
4.4
5.9
1.9
4.4
5.9
1.9
4.4
5.9
V
Vin = VIH or VIL
|Iout|
4.0 mA
|Iout|
5.2 mA
4.5
6.0
3.98
5.48
3.84
5.34
3.7
5.2
VOH
MOTOROLA
3–2
High–Speed CMOS Logic Data
DL129 — Rev 6
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MC54/74HC273A
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
Symbol
VOL
Iin
ICC
VCC
V
– 55 to
25_C
85_C
125_C
Vout = 0.1 V or VCC – 0.1 V
|Iout|
20 µA
2.0
4.5
6.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
Vin = VIH or VIL
|Iout|
4.0 mA
|Iout|
5.2 mA
4.5
6.0
0.26
0.26
0.33
0.33
0.4
0.4
Maximum Input Leakage Current
Vin = VCC or GND
6.0
± 0.1
± 1.0
± 1.0
µA
Maximum Quiescent Supply
Current (per Package)
Vin = VCC or GND
Iout = 0 µA
6.0
4.0
40
160
µA
Parameter
Test Conditions
Maximum Low–Level Output
Voltage
Unit
V
NOTE: Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6.0 ns)
Guaranteed Limit
Symbol
Parameter
VCC
V
– 55 to
25_C
85_C
125_C
Unit
fmax
Maximum Clock Frequency (50% Duty Cycle)
(Figures 1 and 4)
2.0
4.5
6.0
6.0
30
35
5.0
24
28
4.0
20
24
MHz
tPLH
tPHL
Maximum Propagation Delay, Clock to Q
(Figures 1 and 4)
2.0
4.5
6.0
145
29
25
180
36
31
220
44
38
ns
tPHL
Maximum Propagation Delay, Reset to Q
(Figures 2 and 4)
2.0
4.5
6.0
145
29
25
180
36
31
220
44
38
ns
tTLH
tTHL
Maximum Output Transition Time, Any Output
(Figures 1 and 4)
2.0
4.5
6.0
75
15
13
95
19
16
110
22
19
ns
10
10
10
pF
Cin
Maximum Input Capacitance
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the Motorola High–
Speed CMOS Data Book (DL129/D).
Typical @ 25°C, VCC = 5.0 V
CPD
Power Dissipation Capacitance (Per Enabled Output)*
48
pF
* Used to determine the no–load dynamic power consumption: PD = CPD VCC 2 f + ICC VCC . For load considerations, see Chapter 2 of the
Motorola High–Speed CMOS Data Book (DL129/D).
High–Speed CMOS Logic Data
DL129 — Rev 6
3–3
MOTOROLA
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MC54/74HC273A
TIMING REQUIREMENTS (CL = 50 pF, Input tr = tf = 6.0 ns)
Guaranteed Limit
Symbol
Parameter
Fig.
VCC
Volts
– 55 to 25_C
Min
Max
85_C
Min
Max
125_C
Min
Max
Unit
tsu
Minimum Setup Time, Data to Clock
3
2.0
4.5
6.0
60
12
10
75
15
13
90
18
15
ns
th
Minimum Hold Time, Clock to Data
3
2.0
4.5
6.0
3.0
3.0
3.0
3.0
3.0
3.0
3.0
3.0
3.0
ns
Minimum Recovery Time, Reset Inactive to
Clock
2
2.0
4.5
6.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
ns
tw
Minimum Pulse Width, Clock
1
2.0
4.5
6.0
60
12
10
75
15
13
90
18
15
ns
tw
Minimum Pulse Width, Reset
2
2.0
4.5
6.0
60
12
10
75
15
13
90
18
15
ns
Maximum Input Rise and Fall Times
1
2.0
4.5
6.0
trec
tr, tf
MOTOROLA
3–4
1000
500
400
1000
500
400
1000
500
400
ns
High–Speed CMOS Logic Data
DL129 — Rev 6
MC54/74HC273A
SWITCHING WAVEFORMS
tr
CLOCK
tw
tf
VCC
90%
50%
10%
tw
GND
GND
1/fmax
tPHL
50%
Q
tPLH
Q
VCC
50%
RESET
tPHL
trec
90%
50%
10%
VCC
CLOCK
tTLH
50%
GND
tTHL
Figure 1.
Figure 2.
VALID
VCC
DATA
50%
GND
tsu
th
VCC
CLOCK
50%
EXPANDED LOGIC DIAGRAM
GND
Figure 3.
C
D0
3
DR
C
D1
4
DR
C
D2
TEST POINT
DR
C
OUTPUT
DEVICE
UNDER
TEST
7
CL*
DATA
INPUTS
D3
8
DR
C
D4
13
DR
C
D5
* Includes all probe and jig capacitance
14
DR
C
Figure 4. Test Circuit
D6
D7
17
18
DR
C
DR
Q
Q
Q
Q
2
5
6
9
Q0
Q1
Q2
Q3
NONINVERTING
OUTPUTS
Q
Q
Q
Q
12
15
16
19
Q4
Q5
Q6
Q7
11
1
High–Speed CMOS Logic Data
DL129 — Rev 6
3–5
MOTOROLA
MC54/74HC273A
OUTLINE DIMENSIONS
20
11
1
10
J SUFFIX
CERAMIC PACKAGE
CASE 732–03
ISSUE E
NOTES:
1. LEADS WITHIN 0.25 (0.010) DIAMETER, TRUE
POSITION AT SEATING PLANE, AT MAXIMUM
MATERIAL CONDITION.
2. DIMENSION L TO CENTER OF LEADS WHEN
FORMED PARALLEL.
3. DIMENSIONS A AND B INCLUDE MENISCUS.
B
A
L
C
F
DIM
A
B
C
D
F
G
H
J
K
L
M
N
N
H
G
D
J
K
M
MILLIMETERS
MIN
MAX
23.88
25.15
6.60
7.49
3.81
5.08
0.38
0.56
1.40
1.65
2.54 BSC
0.51
1.27
0.20
0.30
3.18
4.06
7.62 BSC
0_
15 _
0.25
1.02
INCHES
MIN
MAX
0.940
0.990
0.260
0.295
0.150
0.200
0.015
0.022
0.055
0.065
0.100 BSC
0.020
0.050
0.008
0.012
0.125
0.160
0.300 BSC
0_
15_
0.010
0.040
SEATING
PLANE
N SUFFIX
PLASTIC PACKAGE
CASE 738–03
ISSUE E
–A–
20
11
1
10
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEAD WHEN
FORMED PARALLEL.
4. DIMENSION B DOES NOT INCLUDE MOLD
FLASH.
B
L
C
–T–
K
SEATING
PLANE
M
N
E
G
F
J
D
M
T A
11
–B–
10X
P
0.010 (0.25)
1
M
B
M
10
20X
D
0.010 (0.25)
M
T A
B
S
J
S
F
R X 45 _
C
–T–
18X
G
K
SEATING
PLANE
M
T B
M
M
DW SUFFIX
PLASTIC SOIC PACKAGE
CASE 751D–04
ISSUE E
–A–
20
20 PL
0.25 (0.010)
20 PL
0.25 (0.010)
MOTOROLA
DIM
A
B
C
D
E
F
G
J
K
L
M
N
INCHES
MIN
MAX
1.010
1.070
0.240
0.260
0.150
0.180
0.015
0.022
0.050 BSC
0.050
0.070
0.100 BSC
0.008
0.015
0.110
0.140
0.300 BSC
0_
15 _
0.020
0.040
MILLIMETERS
MIN
MAX
25.66
27.17
6.10
6.60
3.81
4.57
0.39
0.55
1.27 BSC
1.27
1.77
2.54 BSC
0.21
0.38
2.80
3.55
7.62 BSC
0_
15_
0.51
1.01
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.150
(0.006) PER SIDE.
5. DIMENSION D DOES NOT INCLUDE
DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE 0.13
(0.005) TOTAL IN EXCESS OF D DIMENSION
AT MAXIMUM MATERIAL CONDITION.
DIM
A
B
C
D
F
G
J
K
M
P
R
MILLIMETERS
MIN
MAX
12.65
12.95
7.40
7.60
2.35
2.65
0.35
0.49
0.50
0.90
1.27 BSC
0.25
0.32
0.10
0.25
0_
7_
10.05
10.55
0.25
0.75
INCHES
MIN
MAX
0.499
0.510
0.292
0.299
0.093
0.104
0.014
0.019
0.020
0.035
0.050 BSC
0.010
0.012
0.004
0.009
0_
7_
0.395
0.415
0.010
0.029
M
3–6
High–Speed CMOS Logic Data
DL129 — Rev 6
MC54/74HC273A
OUTLINE DIMENSIONS
DT SUFFIX
PLASTIC TSSOP PACKAGE
CASE 948E–02
ISSUE A
20X
0.15 (0.006) T U
ÍÍÍÍ
ÍÍÍÍ
ÍÍÍÍ
ÍÍÍÍ
ÍÍÍÍ
K REF
0.10 (0.004)
S
M
T U
V
S
S
K
K1
2X
L/2
20
11
B
L
J J1
–U–
PIN 1
IDENT
SECTION N–N
1
10
0.25 (0.010)
N
0.15 (0.006) T U
S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH,
PROTRUSIONS OR GATE BURRS. MOLD FLASH
OR GATE BURRS SHALL NOT EXCEED 0.15
(0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE INTERLEAD
FLASH OR PROTRUSION. INTERLEAD FLASH OR
PROTRUSION SHALL NOT EXCEED 0.25 (0.010)
PER SIDE.
5. DIMENSION K DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN
EXCESS OF THE K DIMENSION AT MAXIMUM
MATERIAL CONDITION.
6. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
7. DIMENSION A AND B ARE TO BE DETERMINED
AT DATUM PLANE –W–.
M
A
–V–
N
F
DETAIL E
–W–
C
G
D
H
DETAIL E
0.100 (0.004)
–T– SEATING
DIM
A
B
C
D
F
G
H
J
J1
K
K1
L
M
MILLIMETERS
MIN
MAX
6.40
6.60
4.30
4.50
–––
1.20
0.05
0.15
0.50
0.75
0.65 BSC
0.27
0.37
0.09
0.20
0.09
0.16
0.19
0.30
0.19
0.25
6.40 BSC
0_
8_
INCHES
MIN
MAX
0.252
0.260
0.169
0.177
–––
0.047
0.002
0.006
0.020
0.030
0.026 BSC
0.011
0.015
0.004
0.008
0.004
0.006
0.007
0.012
0.007
0.010
0.252 BSC
0_
8_
PLANE
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High–Speed CMOS Logic Data
DL129 — Rev 6
◊
CODELINE
*MC54/74HC273A/D*
3–7
MC54/74HC273A/D
MOTOROLA