2SC4708 Silicon NPN Epitaxial High Resolution Monitor Video Output Feature TO-126 MOD • Excellent high frequency characteristics fT = 1.1 GHz typ Cob = 4.2 pF typ • High gain bandwidth product • Low collector output capacitance • High breakdown voltage VCEO = 100 V 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit ————————————————————– Collector to base voltage VCBO 100 2 3 1. Emitter 2. Collector 3. Base V ————————————————————– Collector to emitter voltage VCEO 100 V ————————————————————– Emitter to base voltage VEBO 3 V ————————————————————– Collector current IC 0.2 A ————————————————————– Collector peak current iC(peak) 0.5 A ————————————————————– Collector power dissipation PC 1 W ————————— PC*1 5 W ————————————————————– Junction temperature Tj 150 °C ————————————————————– Storage temperature Tstg –55 to °C +150 ————————————————————– Note: 1. Value at TC = 25°C. Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test condition ——————————————————————————————————————————— Collector to base breakdown voltage V(BR)CBO 100 — — V IC = 10 µA, IE = 0 ——————————————————————————————————————————— Collector to emitter breakdown voltage V(BR)CEO 100 — — V IC = 1 mA, RBE = ∞ ——————————————————————————————————————————— Collector cutoff current ICBO — — 1.0 µA VCB = 80 V, IE = 0 ——————————————————————————————————————————— Emitter cutoff Current IEBO — — 10 µA VEB = 3 V, IC = 0 ——————————————————————————————————————————— DC current transfer ratio hFE*1 60 — 200 VCE = 10 V, IC = 10 mA ———————————————————————————————————————————