Transistors SMD Type Silicon PNP Epitaxial 2SB1025 Features Low frequency power amplifier Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO -120 V Collector to emitter voltage VCEO -80 V Emitter to base voltage VEBO -5 V IC -1 A peak collector current ICP *1 -2 A Collector power dissipation PC *2 1 W Collector current Junction temperature Tj 150 Storage temperature Tstg -55 to +150 *1. PW 10 ms; d 0.02. *2. Value on the alumina ceramic board (12.5 × 20 × 0.7 mm) Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector to base breakdown voltage V(BR)CBO IC = -10 ìA, IE = 0 -120 V Collector to emitter breakdown voltage V(BR)CEO IC = -1 mA, RBE = -80 V Emitter to base breakdown voltage V(BR)EBO IE = -10 ìA, IC = 0 -5 V Collector cutoff current ICBO VCB = -100V, IE = 0 DC current transfer ratio hFE VCE = -5 V,IC = -150 mA -10 60 VCE(sat) IC = -500 mA,IB = -50 mA Collector to emitter saturation voltage ìA 320 -1 Base to emitter voltage VBE VCE = -5 V,IB = -150 mA Gain bandwidth product fT VCE = -5 V,IC = -150 mA 140 MHz VCB = -10 V, IE = 0,f = 1 MHz 20 pF Collector output capacitance Cob -0.9 V V hFE Classification Marking DH DJ DK hFE 60 120 100 200 160 320 www.kexin.com.cn 1