2SD2532 Silicon NPN Epitaxial Application Low frequency power amplifier. UPAK Features • Low saturation voltage. VCE(sat) ≤ 0.2 V max. • Large current capacitance. IC = 2 A 3 2 1 4 1. Base 2. Collector 3. Emitter 4. Collector Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Collector to base voltage VCBO 50 V ——————————————————————————————————————————— Collector to emitter voltage VCEO 50 V ——————————————————————————————————————————— Emitter to base voltage VEBO 6 V ——————————————————————————————————————————— Collector current IC 2 A ——————————————————————————————————————————— Collector peak current iC(peak)* 3 A ——————————————————————————————————————————— Collector power dissipation PC 1 W ——————————————————————————————————————————— Junction temperature Tj 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 ms, duty cycle ≤ 20 % ** When using the alumina ceramic board (12.5 x 20 x 0.7 mm) Note: Attention: Marking is "JS" This device is very sensitive to electro static discharge. It is recommended to adopt appropriate cautions when handling this transistor. 2SD2532 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Collector to base breakdown voltage V(BR)CBO 50 — — V IC = 10 µA, IE = 0 ——————————————————————————————————————————— Collector to emitter breakdown voltage V(BR)CEO 50 — — V IC = 1 mA, RBE = ∞ ——————————————————————————————————————————— Emitter to base breakdown voltage V(BR)EBO 6 — — V IE = 10 µA, IC = 0 ——————————————————————————————————————————— Collector cutoff current ICBO — — 1 µA VCB = 40 V, IE = 0 ——————————————————————————————————————————— Collector cutoff current ICEO — — 5 µA VCE = 40 V, RBE = ∞ ——————————————————————————————————————————— Emitter cutoff current IEBO — — 1 µA VEB = 5 V, IC = 0 ——————————————————————————————————————————— DC current transfer ratio hFE1 120 — 300 VCE = 2 V, IC = 0.5 A* ——————————————————————————————————————————— DC current transfer ratio hFE2 40 — — VCE = 2 V, IC = 1.5 A* ——————————————————————————————————————————— Collector to emitter saturation voltage VCE(sat) — 0.12 0.2 V IC = 1 A, IB = 50 mA* ——————————————————————————————————————————— Base to emitter saturation VBE(sat) — 0.85 1.2 V IC = 1 A, IB = 50 mA* voltage ——————————————————————————————————————————— Gain bandwidth poriduct fT — 120 — VCE = 2 V, IC = 50 mA ——————————————————————————————————————————— Collector output capacitance Cob — 20 — VCB = 10 V, IE = 0 f = 1 MHz ——————————————————————————————————————————— * Pulse test 2SD2532 I C (A) Collector Current s 1m 0.03 n 0.1 Ta = 25 °C 1 shot pulse 0.01 0.1 200 ms 10 tio ra 50 100 150 Ambient Temperature Ta (°C) 0.3 pe 0 I C(max) O 0.5 1 i C(peak) C 1.0 3 = PW 1.5 Area of Safe Operation 10 D Collector Power Dissipation Pc** (W) Maximum Collector Dissipation Curve 2.0 0.3 1 3 10 30 100 Collector to Emitter Voltage V CE (V) ** When using the alumina ceramic board (12.5 x 20 x 0.7 mm) DC Current Transfer Ratio vs. Collector Current Typical Output Characteristics 1.6 10 mA 8 mA 1.2 6 mA 0.8 4 mA 0.4 2 mA Ta = 25 °C 0 IB=0 0.8 0.4 1.2 1.6 2.0 Collector to Emitter Voltage V CE (V) 1000 h FE 14 mA 12 mA DC Current Transfer Ratio Collector Current I C (A) 2.0 75 °C 300 25 °C 100 Ta = –25 °C 30 Pulse test VCE = 2 V 10 0.005 0.01 0.03 0.1 0.3 Collector Current 1 I C (A) 3 5 2SD2532 Collector Current vs. Base to Emitter On Voltage 2 1 10 Pulse test I C = 20 I B 3 1 Ta = –25 °C VBE(sat) 25 °C 0.3 75 °C Ta = 75 °C 0.1 0.03 Collector Current I C (A) Collector to Emitter Saturation Voltage VCE(sat) (V) Base to Emitter Saturation Voltage VBE(sat) (V) Saturation Voltage vs. Collector Current V CE(sat) 0.01 0.01 0.03 0.1 0.3 1 0.2 Ta = –25 °C 0.1 25 °C 0.05 75 °C 0.02 0.01 0.005 25 °C –25 °C 0.003 0.5 3 Pulse test 0.002 V CE = 2 V 0.001 0.2 0.4 0 Collector Current I C (A) 300 100 30 10 10 Pulse test VCE = 2 V Ta = 25 °C 30 100 Collector Current 300 I C (A) 0.8 1.0 Collector to Emitter Saturation Voltage vs. Base Current Gain Bandwidth Product vs. Collector Current 1000 Collector to Emitter Saturation Voltage VCE(sat) (V) Gain Bandwidth Product f T (MHz) 1000 0.6 Base to Emitter On Voltage VBE(on) (V) 10 Pulse test Ta = 25°C 3 1 0.3 IC=2A 1A 0.1 0.5 A 0.03 0.01 1 3 10 30 100 300 Base Current I B (A) 1000 2SD2532 Collector Output Capacitance Cob (pF) Collector Output Capacitance vs. Collector to Base Voltage 300 IE =0 f = 1 MHz 100 30 10 3 1 10 3 30 100 Collector to Base Voltage VCB (V) Package Dimensions Unit : mm 4.5 ± 0.1 φ 1.0 0.53 max 0.48 max 1 2 1.5 1.5 3.0 3 0.8 min 4 1.5 ± 0.1 0.44 max 2.5 ± 0.1 4.25 max 0.4 1.8 max 0.44 max Hitachi Code EIAJ JEDEC UPAK SC–62 UPAK