2SD2098 / 2SD2118 / 2SD2097 Transistors Low VCE(sat) transistor (strobe flash) 2SD2098 / 2SD2118 / 2SD2097 !External dimensions (Units : mm) 2SD2098 4.0±0.3 0.5±0.1 4.5 +0.2 −0.1 1.0±0.2 (1) (2) (3) 0.5±0.1 0.4±0.1 1.5±0.1 +0.1 0.4−0.05 0.4±0.1 1.5±0.1 3.0±0.2 Abbreviated symbol : AH∗ ROHM : MPT3 EIAJ : SC-62 (1) Base (2) Collector (3) Emitter 2SD2118 2.3 +−0.2 0.1 C0.5 2.5 1.5 0.9 0.5±0.1 0.65±0.1 0.75 9.5±0.5 1.5±0.3 6.5±0.2 5.1+0.2 −0.1 0.3 5.5 + −0.1 0.9 0.55±0.1 2.3±0.2 2.3±0.2 1.0±0.2 (1) (2) (3) ROHM : CPT3 EIAJ : SC-63 (1) Base (2) Collector (3) Emitter 2SD2097 2.5±0.2 0.5±0.1 (2) 14.5±0.5 0.65Max. (1) 4.4±0.2 0.9 6.8±0.2 1.0 !Structure Epitaxial planar type NPN silicon transistor 1.5 +0.2 −0.1 1.6±0.1 2.5 +0.2 −0.1 !Features 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC/IB = 4A / 0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SB1386 / 2SB1412 / 2SB1326. (3) 2.54 2.54 1.05 ROHM : ATV ∗ Denotes hFE 0.45±0.1 (1) Emitter (2) Collector (3) Base 2SD2098 / 2SD2118 / 2SD2097 Transistors !Absolute maximum ratings (Ta=25°C) Symbol Limits Unit Collector-base voltage Parameter VCBO 50 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 6 V Collector current IC 5 A(DC) ICP 10 A(Pulse) ∗1 W ∗2 0.5 2SD2098 2 Collector power dissipation PC 2SD2118 1 10 W(Tc=25°C) 1 W 2SD2097 Junction temperature Tj 150 °C Storage temperature Tstg −55~+150 °C ∗3 ∗1 Single pulse Pw=10ms ∗2 When mounted on a 40×40×0.7 mm ceramic board. ∗3 Printed circuit board glass epoxy board, 1.6 mm thick with copper plating 100mm2 or larger. !Electrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Parameter BVCBO 50 − − V IC=50µA Collector-emitter breakdown voltage BVCEO 20 − − V IC=1mA Emitter-base breakdown voltage BVEBO 6 − − V IE=50µA ICBO − − 0.5 µA VCB=40V Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage IEBO − − 0.5 µA VEB=5V VCE(sat) − 0.25 1.0 V IC/IB=4A/0.1A ∗ VCE=2V, IC=0.5A ∗ hFE 120 − 390 − Transition frequency fT − 150 − MHz Output capacitance Cob − 30 − pF DC current transfer ratio ∗ Measured using pulse current. !Packaging specifications and hFE Package Taping Code T100 TL TV2 Basic ordering unit (pieces) 1000 2500 2500 − − Type hFE 2SD2098 QR 2SD2118 QR − 2SD2097 QR − hFE values are classified as follows : Item Q R hFE 120~270 180~390 Conditions − − VCE=6V, IE=−50mA, f=100MHz VCE=20V, IE=0A, f=1MHz 2SD2098 / 2SD2118 / 2SD2097 Transistors !Electrical characteristic curves Ta=100°C 25°C −25°C 0.2 0.1 0.05 0.02 0.01 5m 2m 1m 0 4 40mA 3 35mA 2 5mA 1 0.4 0.6 0.8 1.0 1.2 0 0 1.4 5000 0.8 1.2 200 2V 100 1V 50 20 IB=0mA 1.6 2.0 Ta=100°C 25°C −25°C 200 100 50 20 VCE=2V 1000 500 Ta=100°C 25°C −25°C 200 100 50 20 10 5 1m 2m 5m 0.010.02 0.05 0.10.2 0.5 1 2 5 1m 2m 5m0.010.02 0.050.10.2 0.5 1 2 5 10 COLLECTOR CURRENT : IC (A) 1 0.5 Ta=100°C 25°C −25°C 0.1 0.05 0.02 0.01 2m 5m 0.010.02 0.05 0.1 0.2 0.5 1 2 COLLECTOR CURRENT : IC (A) Fig.7 Collector-emitter saturation voltage vs. collector current ( ΙΙ ) 5 10 2 5 10 2 0.5 0.2 0.1 0.05 IC/IB=50 0.02 40 30 10 0.01 2m 5m0.010.02 0.05 0.1 0.2 0.5 1 lC/lB=30 0.5 Ta=100°C 25°C −25°C 0.1 0.05 0.02 0.01 2m 5m0.010.02 0.05 0.1 0.2 0.5 1 2 COLLECTOR CURRENT : IC (A) Fig.8 Collector-emitter saturation voltage vs. collector current ( ΙΙΙ ) 2 5 10 COLLECTOR CURRENT : IC (A) 1 0.2 Ta=25°C 1 Fig.5 DC current gain vs. collector current ( ΙΙΙ ) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) lC/lB=10 5 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs. collector current ( ΙΙ ) 2 5 1m 2m 5m 0.010.02 0.050.1 0.2 0.5 1 2 Fig.3 DC current gain vs. collector current ( Ι ) 2000 DC CURRENT GAIN : hFE DC CURRENT GAIN : hFE 0.4 5000 VCE=1V 10 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) VCE=5V 500 Fig.2 Grounded emitter output characteristics 2000 0.2 1000 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter propagation characteristics 500 Ta=25°C 2000 10 0.2 BASE TO EMITTER VOLTAGE : VBE (V) 1000 10mA 5000 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 1 0.5 Ta=25°C 30mA 25mA 20mA 15mA 5 10 Fig.6 Collector-emitter saturation voltage vs. collector current ( Ι ) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 2 50mA 45mA DC CURRENT GAIN : hFE 5 VCE=2V COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) 10 5 2 lC/lB=40 1 0.5 0.2 Ta=100°C 25°C −25°C 0.1 0.05 0.02 0.01 2m 5m0.010.02 0.05 0.1 0.2 0.5 1 2 COLLECTOR CURRENT : IC (A) Fig.9 Collector-emitter saturation voltage vs. collector current (IV) 5 10 2SD2098 / 2SD2118 / 2SD2097 1000 lC/lB=50 1 0.5 Ta=100°C 25°C −25°C 0.2 0.1 0.05 0.02 0.01 2m 5m 0.010.02 0.05 0.1 0.2 0.5 1 2 5 Ta=25°C VCE=6V 500 200 100 50 20 10 5 2 1 −1m −2m −5m−10m−20m −50m−0.1 −0.2 −0.5 −1 10 COLLECTOR CURRENT : IC (A) 10 Ic max (Pulse) 0.2 0.5 1 2 5 10 20 50 100 200 500 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.13 Safe operating area (2SD2098) ms 20m 10m 00 50m s 100m 1 500m C 200m 2 D s Ic max (Pulse) Ic max (Pulse) =1 m 5 0m 00 DC 1 500m 10 Pw =1 2 20 =1 Pw Ta=25 (°C) Single pulse 50 Pw 5 µs 00 =1 s Pw m =1 s Pw 10m = 20 Ta=25(°C) Single pulse Recommended land pattern Pw COLLECTOR CURRENT : IC (A) 50 Fig.11 Gain bandwidth product vs. emitter current COLLECTOR CURRENT : IC (A) Fig.10 Collector-emitter saturation voltage vs. collector current (V) EMITTER CURRENT : IE (A) 200m 100m 50m 20m 10m 0.2 0.5 1 2 5 10 20 50 100 200 500 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.14 Safe operating area (2SD2118) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) 2 TRANSITION FREQUENCY : fT (MHz) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Transistors 1000 500 Ta=25°C f=1MHz IC=0A IE=0A 200 Cib 100 50 Cob 20 10 0.1 0.2 0.5 1 2 5 10 20 50 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.12 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage