ETC 5962-9952701Q9A

REVISIONS
LTR
DESCRIPTION
DATE (YR-MO-DA)
APPROVED
REV
SHEET
REV
SHEET
15
16
17
18
19
20
REV STATUS
REV
OF SHEETS
SHEET
PMIC N/A
PREPARED BY
Kenneth Rice
STANDARD MICROCIRCUIT
DRAWING
CHECKED BY
Jeff Bowling
THIS DRAWING IS
AVAILABLE
FOR USE BY ALL
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
AMSC N/A
21
22
23
1
2
3
APPROVED BY
Raymond Monnin
4
5
6
7
8
9
10
11
12
13
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216
http://www.dscc.dla.mil
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD
PROGRAMMABLE GATE ARRAY, 20,000 GATES,
MONOLITHIC SILICON
DRAWING APPROVAL DATE
99 - 01 - 22
REVISION LEVEL
SIZE
A
SHEET
DSCC FORM 2233
APR 97
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
CAGE CODE
67268
1 OF
5962-99527
23
5962-E091-99
14
1. SCOPE
1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)
and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or
Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.
1.2 PIN. The PIN is as shown in the following example:
5962
|
|
|
Federal
stock class
designator
\
-
99527
01
|
|
|
Device
type
(see 1.2.2)
|
|
|
RHA
designator
(see 1.2.1)
Q
|
|
|
Device
class
designator
(see 1.2.3)
/
X
|
|
|
Case
outline
(see 1.2.4)
C
|
|
|
Lead
finish
(see 1.2.5)
\/
Drawing number
1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are
marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A
specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.
1.2.2 Device type(s). The device type(s) identify the circuit function as follows:
Device type
01
02
Generic number
Circuit function
A32200DX
A32200DX-1
Bin speed
20,000 gate, field programmable gate array
20,000 gate, field programmable gate array
227 ns
192 ns
1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows:
Device class
Device requirements documentation
M
Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN
class level B microcircuits in accordance with MIL-PRF-38535, appendix A
Q or V
Certification and qualification to MIL-PRF-38535
1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:
Outline letter
X
Y
Descriptive designator
See Figure 1 1/
See Figure 1 1/
Terminals
Package style
256
208
Ceramic Quad Flat Pack
Ceramic Quad Flat Pack
1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535,
appendix A for device class M.
1/ All exposed metalized areas and leads are gold plated 100 microinches (2.5µm) min. thickness over 80 to 350 microinches
(2.0 to 8.9 µm) thickness of nickel.
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SIZE
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A
REVISION LEVEL
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1.3 Absolute maximum ratings. 2/
DC supply voltage range (VDD) ------------------------------Input voltage range (VI) - --------------------------------------Output voltage range (VO)-------------------------------------I/O source sink current (IIO) ----------------------------------Storage temperature range (TSTG) -------------------------Lead temperature (soldering, 10 seconds) --------------Thermal resistance, junction-to-case (θJC) ---------------Case outline X and Y ------------------------------------------Maximum junction temperature (TJ) -----------------------
-0.5 V dc to +7.0 V dc
-0.5 V dc to VDD + 0.5 V dc
-0.5 V dc to VDD + 0.5 V dc
±20 mA
-65°C to +150°C
300°C
10°C/W 3/
+150°C
1.4 Recommended operating conditions.
Supply voltage (VDD) -----------------------------------------Case operating temperature range (TC) ----------------
+4.5 V dc to +5.5 V dc
-55°C to +125°C
1.5 Digital logic testing for device classes Q and V.
Fault coverage measurement of manufacturing
logic tests (MIL-STD-883, test method 5012)-----------
100 percent 4/
2. APPLICABLE DOCUMENTS
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of
this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue
of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the solicitation.
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
STANDARDS
DEPARTMENT OF DEFENSE
MIL-STD-883 MIL-STD-973 MIL-STD-1835 -
Test Method Standard Microcircuits.
Configuration Management.
Interface Standard For Microcircuit Case Outlines.
HANDBOOKS
DEPARTMENT OF DEFENSE
MIL-HDBK-103 MIL-HDBK-780 -
List of Standard Microcircuit Drawings (SMD's).
Standard Microcircuit Drawings.
(Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the Standardization
Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the
maximum levels may degrade performance and affect reliability.
3/ When a thermal resistance for this case is specified in MIL-STD-1835 that value shall supersede the value indicated herein.
4/ 100 percent test coverage of blank programmable logic devices.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
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A
REVISION LEVEL
SHEET
3
2.2 Non-Government publications. The following documents form a part of this document to the extent specified herein. Unless
otherwise specified, the issues of the documents which are DoD adopted are those listed in the issue of the DODISS cited in the
solicitation. Unless otherwise specified, the issues of documents not listed in the DODISS are the issues of the documents cited in
the solicitation.
AMERICAN SOCIETY FOR TESTING AND MATERIALS (ASTM)
ASTM Standard F1192-95 - Standard Guide for the Measurement of Single Event Procedures from
Heavy Ion Irradiation of Semiconductor Devices.
(Applications for copies of ASTM publications should be addressed to the American Society for Testing and Materials, 1916
Race Street, Philadelphia, Pennsylvania 19103).
ELECTRONICS INDUSTRIES ALLIANCE (EIA)
JEDEC Standard No. 17 - A Standard Test Procedure for the Characterization of
Latch-up in CMOS Integrated Circuits.
(Applications for copies should be addressed to the Electronics Industries Alliance, 2500 Wilson Blvd., Arlington, VA 22201.)
(Non-Government standards and other publications are normally available from the organizations that prepare or distribute the
documents. These documents also may be available in or through libraries or other informational services.)
2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of
this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific
exemption has been obtained.
3. REQUIREMENTS
3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with
MIL-PRF-38535 and as specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The
modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for
device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein.
3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in
MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M.
3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.4 herein and figure 1.
3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2.
3.2.3 Truth table(s).
3.2.3.1 Unprogrammed devices. The truth table or test vectors for unprogrammed devices for contracts involving no altered item
drawing is not part of this drawing. When required in screening (see 4.2 herein) or quality conformance inspection group A, B, C,
D, or E (see 4.4 herein), the devices shall be programmed by the manufacturer prior to test. A minimum of 50 percent of the total
number of logic modules shall be utilized or at least 25 percent of the total logic modules shall be utilized for any altered item
drawing pattern.
3.2.3.2 Programmed devices. The truth table or test vectors for programmed devices shall be as specified by an attached
altered item drawing.
3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical
performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case
operating temperature range.
3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical
tests for each subgroup are defined in table I.
3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be marked
as listed in MIL-HDBK-103. For packages where marking of the entire SMD PIN number is not feasible due to space limitations,
the manufacturer has the option of not marking the "5962-" on the device. For RHA product using this option, the RHA designator
shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M
shall be in accordance with MIL-PRF-38535, appendix A.
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REVISION LEVEL
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3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a "QML" or "Q" as required in
MIL-PRF-38535. The compliance mark for device class M shall be a "C" as required in MIL-PRF-38535, appendix A.
3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed
manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of
compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see
6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing
shall affirm that the manufacturer's product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or
for device class M, the requirements of MIL-PRF-38535, appendix A and herein.
3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in
MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to
this drawing.
3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2
herein) involving devices acquired to this drawing is required for any change as defined in MIL-STD-973.
3.9 Verification and review for device class M. For device class M, DSCC, DSCC's agent, and the acquiring activity retain the
option to review the manufacturer's facility and applicable required documentation. Offshore documentation shall be made
available onshore at the option of the reviewer.
3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit
group number 42 (see MIL-PRF-38535, appendix A).
3.11 Processing options. Since the device is capable of being programmed by either the manufacturer or the user to result in a
wide variety of configurations, two processing options are provided for selection in the contract.
3.11.1 Unprogrammed device delivered to the user. All testing shall be verified through group A testing as defined in 3.2.3.1 and
table IIA. It is recommended that users perform subgroups 7 and 9 after programming to verify the specific program configuration.
3.11.2 Manufacturer-programmed device delivered to the user. All testing requirements and quality assurance provisions herein,
including the requirements of the altered item drawing, shall be satisfied by the manufacturer prior to delivery.
4. QUALITY ASSURANCE PROVISIONS
4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with
MIL-PRF-38535 or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan shall
not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in
accordance with MIL-PRF-38535, appendix A.
4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on
all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in accordance with
method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection.
4.2.1 Additional criteria for device class M.
a. Delete the sequence specified as initial (pre-burn-in) electrical parameters through interim (post-burn-in) electrical
parameters of method 5004 and substitute lines 1 through 6 of table IIA herein.
b. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available
to the preparing or acquiring activity upon request. For device class M the test circuit shall specify the inputs, outputs,
biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1015.
(1) Dynamic burn-in for device classes M (method 1015 of MIL-STD-883, test condition D; for circuit, see 4.2.1b herein).
c. Interim and final electrical test parameters shall be as specified in table IIA herein.
4.2.2 Additional criteria for device classes Q and V.
a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the device
manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under document
revision level control of the device manufacturer's Technology Review Board (TRB) in accordance with MIL-PRF-38535
and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs,
outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1015 of MILSTD-883.
STANDARD
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REVISION LEVEL
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b. Interim and final electrical test parameters shall be as specified in table IIA herein.
c. Additional screening for device class V beyond the requirements of device class Q shall be as specified in MIL-PRF-38535,
appendix B.
4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be in
accordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein for groups
A, B, C, D, and E inspections (see 4.4.1 through 4.4.4).
4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with MIL-PRF38535 including groups A, B, C, D, and E inspections and as specified herein except where option 2 of MIL-PRF-38535 permits
alternate in-line control testing. Quality conformance inspection for device class M shall be in accordance with MIL-PRF-38535,
appendix A and as specified herein. Inspections to be performed for device class M shall be those specified in method 5005 of
MIL-STD-883 and herein for groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4).
4.4.1 Group A inspection.
a. Tests shall be as specified in table IIA herein.
b. Subgroups 5 and 6 of table I of method 5005 of MIL-STD-883 shall be omitted.
c. Subgroup 4 (CIN and COUT measurements) shall be measured only for initial qualification and after any process or
design changes which may affect input or output capacitance. Capacitance shall be measured between the
designated terminal and GND at a frequency of 1 MHz. Sample size is five devices with no failures on a minimum
of ten worst case pins from each device.
d. O/V (latch-up) tests shall be measured only for initial qualification and after any design or process changes which
may affect the performance of the device. For device class M procedures and circuits shall be maintained under
document revision level control by the manufacturer and shall be made available to the preparing activity or
acquiring activity upon request. For device classes Q and V, the procedures and circuits shall be under the
control of the device manufacturer's technical review board (TRB) in accordance with MIL-PRF-38535 and shall
be made available to the preparing activity or acquiring activity upon request. Testing shall be on all pins, on 5
devices with zero failures. Latch-up test shall be considered destructive. Information contained in JEDEC
standard number 17 may be used for reference.
e. Programmed device (see 3.2.3.2) - For device class M, subgroups 7, 8A, and 8B tests shall consist of verifying the
functionality of the device. For device classes Q and V, subgroups 7 and 8 shall include verifying the functionality
of the device. These tests shall have been fault graded in accordance with MIL-STD-883, test method 5012 (see
1.6 herein).
f. Unprogrammed devices shall be tested for programmability and dc and ac performance compliance to the
requirements of group A, subgroups 1 and 7.
(1) A sample shall be selected from each wafer lot to satisfy programmability requirements. Eight devices shall be submitted
to programming (see 3.2.3.1). If any device fails to program, the lot shall be rejected. At the manufacturer's option, the
sample may be increased to 18 total devices with no more than two total device failures allowable.
(2) These eight devices shall also be submitted to the requirements of the specified tests of group A, subgroups 1 and 7. If
any device fails, the lot shall be rejected. At the manufacturer's option, the sample may be increased to 18 total devices
with no more than two total device failures allowable.
(3a) Eight devices from the programmability sample shall be submitted to the requirements of group A, subgroups 9 for
binning circuit delay only. If any device fails, the lot shall be rejected. At the manufacturer's option, the sample may be
increased to 18 total devices with no more than two total device failures allowable.
(3b) If the binning circuit is tested on 100 percent of the products, then the above requirement (3A) is met.
4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table IIA herein.
4.4.2.1 Additional criteria for device class M. Steady-state life test conditions, method 1005 of MIL-STD-883:
a. Test condition D. The test circuit shall be maintained by the manufacturer under document revision level control and shall
be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs,
biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005.
b. TA = +125°C, minimum.
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c. Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883.
4.4.2.2 Additional criteria for device classes Q and V. The steady-state life test duration, test condition and test temperature, or
approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The test
circuit shall be maintained under document revision level control by the device manufacturer's TRB, in accordance with MIL-PRF38535, and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs,
outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005 of MIL-STD-883.
4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table IIA herein.
4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness assured
(see 3.5 herein).
a. End-point electrical parameters shall be as specified in table IIA herein.
b. For device classes Q and V, the devices or test vehicle shall be subjected to radiation hardness assured tests as specified
in MIL-PRF-38535 for the RHA level being tested. For device class M, the devices shall be subjected to radiation
hardness assured tests as specified in MIL-PRF-38535, appendix A for the RHA level being tested. All device classes
must meet the postirradiation end-point electrical parameter limits as defined in table I at TA = +25°C ±5°C, after exposure,
to the subgroups specified in table IIA herein.
c. When specified in the purchase order or contract, a copy of the RHA delta limits shall be supplied.
4.5 Delta measurements for device class V. Delta measurements, as specified in table IIA, shall be made and recorded
before and after the required burn-in screens and steady-state life tests to determine delta compliance. The electrical
parameters to be measured, with associated delta limits are listed in table IIB. The device manufacturer may, at his option,
either perform delta measurements or within 24 hours after burn-in perform final electrical parameter tests, subgroups 1, 7, and
9.
4.6 Programming procedures. The programming procedures shall be as specified by the device manufacturer and shall be
made available upon request.
5. PACKAGING
5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535 for device classes Q
and V or MIL-PRF-38535, appendix A for device class M.
6. NOTES
6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original
equipment), design applications, and logistics purposes.
6.1.1 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractor prepared
specification or drawing.
6.1.2 Substitutability. Device class Q devices will replace device class M devices.
6.2 Configuration control of SMD's. All proposed changes to existing SMD's will be coordinated with the users of record for the
individual documents. This coordination will be accomplished in accordance with MIL-STD-973 using DD Form 1692, Engineering
Change Proposal.
6.3 Record of users. Military and industrial users should inform Defense Supply Center Columbus when a system application
requires configuration control and which SMD's are applicable to that system. DSCC will maintain a record of users and this list will
be used for coordination and distribution of changes to the drawings. Users of drawings covering microelectronic devices (FSC
5962) should contact DSCC-VA, telephone (614) 692-0525.
6.4 Comments. Comments on this drawing should be directed to DSCC-VA , Columbus, Ohio 43216-5000, or telephone
(614) 692-0674.
6.5 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in
MIL-PRF-38535 and MIL-HDBK-1331.
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TABLE I. Electrical performance characteristics.
Test
Symbol
Group A
Subgroups
Conditions 1/
4.5 V < VCC < 5.5 V
o
o
-55 C < TC < +125 C
unless otherwise specified
Device
type
Min
High Level output
voltage
VOH
Test one output at a time,
VCC = 4.5 V, IOH = -4.0 mA
1, 2, 3
All
Low level output
voltage
VOL
Test one output at a time,
VCC = 4.5 V, IOL = 6.0 mA
1, 2, 3
All
Low level input
voltage
VIL
1, 2, 3
All
High level input
voltage
VIH
1, 2, 3
All
Standby supply current
IDD
Outputs unloaded,
VCC = 5.5 V,
VIN = VCC or GND
1, 2, 3
All
Input leakage current
IIL
VCC = 5.5 V,
VIN = VCC or GND
1, 2, 3
All
Output leakage current
IOZ
VCC = 5.5 V,
VO = VCC or GND
1, 2, 3
All
I/O terminal
capacitance
CI/O
See 4.4.1c, f= 1.0 Mhz,
VOUT = 0 V
4
All
Functional tests
FT 2/
See 4.4.1e, VO = 0 V,
VCC = 4.5 V
7, 8A, 8B
All
Binning circuit delay
tPBLH,
tPBHL
See figure 3, VIL = 0 V,
VIH = 3.0 V, VCC = 4.5 V,
VOUT = 1.5 V 3/
9, 10, 11
Unit
Limits
Max
3.7
V
0.4
V
-0.3
0.8
V
2.0
VCC
+0.3
V
25
mA
-10
10
µA
-10
10
µA
20
pF
01
227
ns
02
192
1/
All tests shall be performed under the worst case condition unless otherwise specified
2/
Devices are functionally tested using a serial scan test method. Data is shifted into the SDI pin and the DCLK pin is used as a
clock. The data is used to drive the inputs of the internal logic and I/O modules, allowing a complete functional test to be
performed. The outputs of the module can be read by shifting out the output response or by monitoring the PRA, PRB, or
SDO pins. These tests form a part of the manufacturer’s test tape and shall be maintained and available at the approved
source(s) of supply upon request by preparing or acquiring activity.
3/
Binning circuit delay is defined as the input-to-output delay of a special path called the "binning circuit". The binning circuit
consists of one input buffer plus 16 combinatorial logic modules plus one output buffer. The logic modules are distributed
along the left side of the device. These modules are configured as non-inverting buffers and are connected through
programmed antifuses with typical capacitive loading.
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REVISION LEVEL
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Case outline X
A
A1
b
c
D1/ E1
D2/ E2
e
F1
F4
L1
L2
L3
H
Weight
Min.
2.78
2.43
0.18
0.11
35.64
22.98
22.61
74.60
69.87
55.80
65.77
Norm.
3.17
2.79
0.20
0.15
36.00
31.5 BSC
0.50 BSC
23.11
22.86
75.00
70.00
56.30
65.90
20gm Typ.
Max.
3.56
3.15
0.22
0.17
36.36
23.23
23.11
75.40
70.13
56.80
66.03
Note: All dimensions are in millimeters.
Figure 1. Case outlines.
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Case outline Y
Min.
Norm.
Max.
A
2.79
3.18
3.57
A1
2.44
2.80
3.16
b
0.18
0.20
0.22
c
0.08
0.13
0.18
D1
28.96
29.21
29.46
D2
25.5 BSC
e
0.50 BSC
F1
22.98
23.11
23.23
F4
22.61
22.86
23.11
L1
74.60
75.00
75.40
L2
69.87
70.00
70.13
L3
55.80
56.30
56.80
H
65.77
65.90
66.03
Weight
18.5gm Typ.
Note: All dimensions are in millimeters.
FIGURE 1. Case outline – Continued.
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Case outline X
Device
Types
All
Terminal
Number
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
Terminal
Symbol
NC
GND
I/O
I/O
I/O
I/O
I/O
I/O
I/O
GND
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
VCC
I/O
I/O
VSV,VCC
VCC
GND
VPP,VCC
VKS,GND
TCK, I/O
I/O
GND
I/O
I/O
I/O
I/O
I/O
I/O
I/O
Device
Types
Terminal
Number
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
85
86
All
Terminal
Symbol
I/O
I/O
I/O
I/O
GND
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
VCC
GND
GND
NC
NC
NC
I/O
TDO,SDO, I/O
I/O
WD, I/O
WD, I/O
I/O
VCC
I/O
I/O
I/O
WD, I/O
GND
WD, I/O
I/O
QCLKB,I/O
I/O
I/O
I/O
I/O
I/O
I/O
Device
Types
All
Terminal
number
87
88
89
90
91
92
93
94
95
96
97
98
99
100
101
102
103
104
105
106
107
108
109
110
111
112
113
114
115
116
117
118
119
120
121
122
123
124
125
126
127
128
129
Terminal
Symbol
WD, I/O
WD, I/O
I/O
I/O
I/O
I/O
I/O
I/O
VCC
VCC
GND
GND
I/O
I/O
I/O
I/O
I/O
I/O
WD, I/O
WD, I/O
I/O
I/O
WD, I/O
WD, I/O
I/O
QCLKA,I/O
I/O
GND
I/O
I/O
I/O
I/O
VCC
I/O
WD, I/O
WD, I/O
I/O
I/O
TDI, I/O
TMS, I/O
GND
NC
NC
FIGURE 2. Terminal connections.
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Case Outline X
Device
All
Device
Types
Terminal Number
130
131
132
133
134
135
136
137
138
139
140
141
142
143
144
145
146
147
148
149
150
151
152
153
154
155
156
157
158
159
160
161
162
163
164
165
166
167
168
169
170
171
172
All
Device
Types
Terminal Symbol Terminal Number
NC
GND
I/O
I/O
I/O
I/O
I/O
I/O
I/O
GND
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
VCC
I/O
I/O
VSV,VCC
VCC
GND
I/O
I/O
I/O
I/O
GND
I/O
I/O
I/O
I/O
VCC
I/O
I/O
173
174
175
176
177
178
179
180
181
182
183
184
185
186
187
188
189
190
191
192
193
194
195
196
197
198
199
200
201
202
203
204
205
206
207
208
209
210
211
212
213
214
All
Types
Terminal Symbol
Terminal number
Terminal Symbol
I/O
I/O
I/O
I/O
I/O
I/O
I/O
GND
I/O
I/O
I/O
I/O
I/O
I/O
I/O
MODE
VCC
GND
NC
NC
NC
I/O
DCLK,I/O
I/O
I/O
I/O
WD, I/O
WD, I/O
VCC
I/O
I/O
I/O
I/O
GND
I/O
I/O
QCLKC,I/O
I/O
WD, I/O
WD, I/O
I/O
I/O
215
216
217
218
219
220
221
222
223
224
225
226
227
228
229
230
231
232
233
234
235
236
237
238
239
240
241
242
243
244
245
246
247
248
249
250
251
252
253
254
255
256
WD, I/O
WD, I/O
I/O
PRB,I/O
I/O
CLKB, I/O
I/O
GND
GND
VCC
VCC
I/O
CLKA,I/O
I/O
PRA,I/O
I/O
I/O
WD, I/O
WD, I/O
I/O
I/O
I/O
I/O
I/O
I/O
QCLKD,I/O
I/O
WD, I/O
GND
WD, I/O
I/O
I/O
I/O
VCC
I/O
WD, I/O
WD, I/O
I/O
SDI, I/O
I/O
GND
NC
FIGURE 2. Terminal connections - Continued.
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Case Outline Y
Device
Types
Terminal
Number
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
All
Terminal
Symbol
GND
VCC
MODE
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
VCC
I/O
I/O
I/O
I/O
GND
I/O
I/O
I/O
I/O
GND
VCC
VSV, VCC
I/O
I/O
VCC
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
GND
Device
Types
Terminal
Number
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
85
86
87
88
89
90
91
92
93
94
95
96
97
98
99
100
101
102
103
104
All
Terminal
Symbol
GND
TMS, I/O
TDI, I/O
I/O
I/O (WD)
I/O (WD)
I/O
VCC
I/O
I/O
I/O
I/O
QCLKA, I/O
I/O (WD)
I/O (WD)
I/O
I/O
I/O (WD)
I/O (WD)
I/O
I/O
I/O
I/O
I/O
I/O
GND
VCC
VCC
I/O
I/O
I/O
I/O
I/O (WD)
I/O (WD)
I/O
I/O
I/O
I/O
QCLKB, I/O
I/O
I/O (WD)
I/O (WD)
I/O
I/O
I/O
VCC
I/O
I/O (WD)
I/O (WD)
I/O
TDO, SDO, I/O
I/O
Device
Types
Terminal
Number
105
106
107
108
109
110
111
112
113
114
115
116
117
118
119
120
121
122
123
124
125
126
127
128
129
130
131
132
133
134
135
136
137
138
139
140
141
142
143
144
145
146
147
148
149
150
151
152
153
154
155
156
All
Terminal
Symbol
GND
VCC
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
GND
I/O
TCK, I/O
VKS, GND
VPP, VCC
GND
VCC
VSV, VCC
I/O
I/O
VCC
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
GND
I/O
I/O
I/O
I/O
I/O
I/O
Device
Types
Terminal
Number
157
158
159
160
161
162
163
164
165
166
167
168
169
170
171
172
173
174
175
176
177
178
179
180
181
182
183
184
185
186
187
188
189
190
191
192
193
194
195
196
197
198
199
200
201
202
203
204
205
206
207
208
All
Terminal
Symbol
GND
I/O
SDI, I/O
I/O
I/O (WD)
I/O (WD)
I/O
VCC
I/O
I/O
I/O
I/O (WD)
I/O (WD)
I/O
QCLKD, I/O
I/O
I/O
I/O
I/O
I/O (WD)
I/O (WD)
PRA, I/O
I/O
CLKA, I/O
I/O
VCC
VCC
GND
I/O
CLKB, I/O
I/O
PRB, I/O
I/O
I/O (WD)
I/O (WD)
I/O
I/O
I/O (WD)
I/O (WD)
QCLKC, I/O
I/O
I/O
I/O
I/O
I/O
VCC
I/O (WD)
I/O (WD)
I/O
I/O
DCLK, I/O
I/O
FIGURE 2. Terminal connections - Continued.
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FIGURE 3. Switching test circuit and waveforms.
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TABLE IIA. Electrical test requirements. 1/ 2/ 3/ 4/ 5/ 6/ 7/
Line
no.
Test requirements
Subgroups
(in accordance with
MIL-STD-883,
TM 5005, table I)
Subgroups
(in accordance with
MIL-PRF-38535, table III)
Device
class M
1
Interim electrical
parameters (see 4.2)
2
Static burn-in
(method 1015)
3
Same as line 1
4
Dynamic burn-in
(method 1015)
5
Same as line 1
6
Final electrical
parameters (see 4.2)
7
Group A test
requirements
(see 4.4)
8
Device
class Q
Device
class V
1, 7, 9
Not
required
Not
required
Required
1*, 7* )
Required
Required
Required
1*, 7* )
1*, 2, 3, 7*,
8A,8B,9,10,11
1*, 2, 3, 7*,
8A,8B, 9, 10, 11
1*, 2, 3, 7*,
8A,8B, 9, 10, 11
1, 2, 3, 4**, 7,
8A, 8B, 9, 10, 11
1, 2, 3, 4**, 7,
8A, 8B, 9, 10, 11
1, 2, 3, 4**, 7,
8A, 8B, 9, 10, 11
Group C end-point
electrical
parameters (see 4.4)
2, 3, 7,
8A, 8B
2, 3, 7,
8A, 8B
1, 2, 3, 7, 8A,
8B, 9, 10, 11 )
9
Group D end-point
electrical
parameters (see 4.4)
2, 3, 8A, 8B
2, 3, 8A, 8B
2, 3, 8A, 8B
10
Group E end-point
electrical
parameters (see 4.4)
1, 7, 9
1, 7, 9
1, 7, 9
1/
2/
3/
4/
5/
6/
7/
Blank spaces indicate tests are not applicable.
Any or all subgroups may be combined when using high-speed testers.
Subgroups 7 and 8 functional tests shall verify the functionality for unprogrammed devices or that the altered
item drawing pattern exists for programmed devices.
* indicates PDA applies to subgroup 1 and 7.
** see 4.4.1c.
) indicates delta limit (see table IIB) shall be required where specified, and the delta values shall be computed
with reference to the previous interim electrical parameters (see line 1).
See 4.4.1d.
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TABLE IIB. Delta limits at +25°C.
Parameter 1/
Device types
All
IDD
±10% of specified value of
table IA
IOZ
±10% of specified value of
table IA
tPBLH, tPBHL
1/
±10 ns
The above parameter shall be recorded before and after
the required burn-in and life tests to determine the delta.
6.6 Sources of supply.
6.6.1 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in QML-38535.
The vendors listed in QML-38535 have submitted a certificate of compliance (see 3.6 herein) to DSCC-VA and have agreed to this
drawing.
6.6.2 Approved sources of supply for device class M. Approved sources of supply for class M are listed in MIL-HDBK-103.
The vendors listed in MIL-HDBK-103 have agreed to this drawing and a certificate of compliance (see 3.6 herein) has been
submitted to and accepted by DSCC-VA.
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Appendix A
Appendix A forms a part of SMD 5962-99527
10.
Scope
10.1 Scope. This appendix establishes minimum requirements for microcircuit die to be supplied under two high reliability class
levels (class Q and M) and space application (class V). QML microcircuit die meeting the requirements of MIL-PRF-38535 and the
manufacturers approved QML plan for use in monolithic microcircuits, multichip modules (MCMs), hybrids, electronic modules, or
devices using chip and wire designs in accordance with MIL-PRF-38534 are specified herein. When available a choice of class
levels are reflected in the PIN.
10.2 PIN. The PIN is as shown in the following example:
5962
99527
01
|
|
|
|
|
|
Federal
RHA
Device
stock class
designator
type
designator
(10.2.1)
(see 10.2.2)
\_____________ _______________/
V
Drawing number
Q
|
|
Device
class
(see 10.2.3)
9
|
|
Die
Code
(see 10.2.4)
X
|
|
Die
details
(see 10.2.5)
10.2.1
RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA
levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.
10.2.2 Device type(s). The device type(s) shall identify the circuit function as follows:
Device type
Generic number
01
Circuit function
32200DX
Bin speed
20,000 gate, field programmable gate array
251 ns
10.2.3 Device class designator. The device class designator shall be a single letter identifying the product
follows:
Device class
Q or V
assurance level as
Device requirements documentation
Certification and qualification to MIL-PRF-38535
10.2.4 Die code. The die code designator shall be a number 9 for all devices supplied as die only with no case outline.
10.2.5 Die details. The die details designation shall be a unique which designates the die’s physical dimensions, bonding pad
location(s) and related electrical function(s), interface materials, and other assembly related information, for each product and variant
supplied to this appendix.
10.2.5.1 Die physical dimensions.
Device type
01
Die size (X,Y)
503mils, 474mils
Die thickness
19±1 mils
Die Detail
A
Figure Number
A-1
10.2.5.2 Die bonding pad locations and electrical functions.
Device type
01
Die Detail
A
Figure Number
A-1
10.2.5.3 Interface materials.
Device type
01
Top metalization
Ti-cap+Al/Cu/Si,9-12kΑ
Backside metalization
None (backgrind)
Die Detail
A
Glassivation
Ox/Nitride
Die Detail
A
Figure Number
A-1
10.2.5.4 Assembly related information.
Device type
01
Figure Number
A-1
10.2.5.4 Wafer fab locations
Device type
01
Source
Chartered Semiconductor, Singapore
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REVISION LEVEL
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10.3 Absolute maximum ratings.
See paragraph 1.3 within the body of this drawing for details.
10.4 Recommended operating conditions.
See paragraph 1.4 within the body of this drawing for details.
20. APPLICABLE DOCUMENTS.
See paragraph 2.1, 2.2 and 2.3 within the body of this drawing for details.
30. REQUIREMENTS.
30.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF389535 and as specified herein or as modified in the device manufacturer’s Quality Management (QM) plan. The Modification in
the QM plan shall not effect the form, fit or function as described herein.
30.2 Design, construction and physical dimensions. The design, construction and physical dimensions shall be as specified in
MIL-PRF-38535 and the manufacturer’s QM plan, for device classes Q and V and herein.
30.2.1 Die physical dimensions. The die physical dimensions shall be specified in 10.2.5.1 and on figures A-1.
30.2.2 Die bonding pad locations and electrical functions. The die bonding pad locations and electrical functions shall be as
specified in 10.2.5.2 and on figures A-1.
30.2.3 Interface materials. The interface materials for the die shall be as specified in 10.2.5.3 and on figures A.
30.2.4 Assembly related information. The assembly related information shall be as specified in 10.2.5.4 and figures A-1.
30.3 Electrical performance characteristics and post-irradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics are as specified in table 1 of the body of this document.
30.4 Electrical test requirements. The electrical test requirements shall include functional and parametric testing sufficient to
make the packaged die capable of meeting the electrical performance requirements in table 1.
30.5 Marking. As a minimum, each unique lot of die, loaded in single or multiple stack of carriers, for shipment to a
customer, shall be identified with the wafer lot number, the certification mark, the manufacturer’s identification and the PIN listed in
10.2 herein. The certification mark shall be “QML” or “Q” as required by MIL-PRF-38535 and “M” for device class M in according to
MIL-PRF-38535, appendix A.
30.6 Certification of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML38535 listed manufacturer in order to supply to the requirements of this drawing (see 60.4 herein). The certificate of compliance
submitted to DSCC-VA prior to listing as an approved source of supply for this appendix shall affirm that the manufacturer’s
product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and the requirements herein or for device class M,
the requirements of MIL-PRF-38535, appendix A and herein.
30.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535
shall be provided with each lot of microcircuit die delivered to this drawing.
30.8 Processing options. Since the device is capable of being programmed by either the manufacturer or the user to result in
a wide variety of configurations; two processing options are provided for selection in the contract, using an altered item drawing.
30.9
Unprogrammed die delivered to the user. All testing shall be verified through wafer probe test as defined in 40.2.
30.10 Manufacturer-programmed die delivered to the user. The programming integrity test shall be performed during
programming. It is recommended that users perform subgroups 7 and 9 after programming to verify the specific program
configuration.
40. QUALITY ASSURANCE PROVISIONS
40.1 Sampling and inspection. For device classes Q and V, die sampling and inspection procedures shall be in accordance
with MIL-PRF-38535 or as modified in the device manufacturer’s Quality Management (QM) plan. The modification in the QM plan
shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in
accordance with MIL-PRF-38535, appendix A.
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40.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and as defined in the
manufacturer’s QM plan. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be
conducted on all devices prior to quality conformance inspection. As a minimum it shall consist of:
a) Wafer lot acceptance for Class V product using the criteria within MIL-STD-883 test method 5007.
b) 100% wafer probe (see paragraph 30.4)
c) 100% internal visual inspection to the applicable class M, Q or V criteria defined within MIL-STD-883 test method
2010 or the alternate procedures allowed within MIL-STD-883 test method 5004.
40.3 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with MIL-PRF38535. Inspections to be performed including groups A, B, C, D and E inspections and as specified herein except where MIL-PRF38535 permits alternate in-line control testing.
40.3.1 Programmability. See 4.4.1.e for packaged die.
40.3.2 Group E inspection. Group E inspection is required only for parts intended to be identified as radiation assured (see
30.5 herein). RHA levels for device classes Q and V shall be as specified in MIL-PRF-38535.
a) End point electrical testing of packaged die shall be as specified in table IIA.
b) For device class M, the devices shall be subjected to radiation hardness assured testes as specified in MIL-PRF-38535,
appendix A, for the RHA level being tested. For device classes Q and V, the devices or test vehicle shall be subjected to
radiation hardness assured tests as specified in MIL-PRF-38535 for the RHA level being tested. All device classes must
o
o
meet the post irradiation end-point electrical parameter limits as defined in table I at TA=+25 ±5 C, after exposure, to the
subgroups specified in table IIA herein.
50. DIE CARRIER
50.1 Die carrier requirements. The requirements for the die carrier shall be accordance with the manufacturer’s QM plan or as
specified in the purchase order by the acquiring activity. The die carrier shall provide adequate physical, mechanical and
electrostatic protection.
60.
NOTES
60.1 Intended use. Microcircuit die conforming to this drawing are intended for use in microcircuits built in accordance with
MIL-PRF-38535 or MIL-PRF-38534 for government microcircuit application (original equipment), design applications and logistics
purposes.
60.2 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractorprepared specification or drawing.
60.3 Substitutability. Device class Q devices will replace device class M devices.
60.4 Configuration control of SMD’s. All proposed changes to existing SMD’s will be coordinated with the users of record for
the individual documents. This coordination will be accomplished in accordance with MIL-STD-973 using DD Form 1692,
Engineering Change Proposal.
60.5 Record of users. Military and industrial users should inform Defense Supply Center Columbus when a system application
requires configuration control and which SMD’s are applicable to that system. DSCC will maintain a record of users and this list will
be used for coordination and distribution of changes to the drawings. Users of drawings covering microelectronic devices (FSC
5962) should contact DSCC-VA, telephone (614)-692-0525.
60.6 Comments. Comments on this appendix should be directed to DSCC-VA, Columbus, Ohio, 43216-5000 or telephone
(614)-692-0674.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-99527
A
REVISION LEVEL
SHEET
19
Figure A-1. Bond Pad Functions and Locations
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-99527
A
REVISION LEVEL
SHEET
20
Bond Pad Functions and Locations
Pad #
Name
Center-X
Center-Y
Pad #
Name
Center-X
Center-Y
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
GND
VCC
MODE
GND
I/O
I/O
I/O
I/O
I/O
I/O
I/O
GND
I/O
I/O
VCC
I/O
I/O
I/O
I/O
I/O
I/O
I/O
VCC
I/O
I/O
I/O
I/O
GND
I/O
I/O
I/O
I/O
GND
VCC
VSV, VCC
I/O
I/O
VCC
I/O
I/O
I/O
I/O
-6146
-6146
-6146
-6146
-6146
-6146
-6146
-6146
-6146
-6146
-6146
-6146
-6146
-6146
-6146
-6146
-6146
-6146
-6146
-6146
-6146
-6146
-6146
-6146
-6146
-6146
-6146
-6146
-6146
-6146
-6146
-6146
-6146
-6146
-6146
-6146
-6146
-6146
-6146
-6146
-6146
-6146
5540
5342
5142
4968
4795
4679
4551
4404
4256
4109
3962
3787
3612
3465
3290
3116
2968
2821
2674
2527
2380
2233
2027
1846
1723
1600
1477
1296
1115
992
869
747
354
176
-262
-385
-508
-689
-932
-1116
-1299
-1483
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
VCC
I/O
I/O
GND
I/O
I/O
I/O
I/O
I/O
I/O
I/O
GND
VCC
GND
TMS, BININ, I/O
TDI, BINOUT,I/O
I/O
I/O
I/O(WD)
I/O(WD)
I/O
VCC
I/O
I/O
I/O
I/O
GND
I/O
QCLKA, I/O
I/O
I/O(WD)
I/O(WD)
I/O
-6146
-6146
-6146
-6146
-6146
-6146
-6146
-6146
-6146
-6146
-6146
-6146
-6146
-6146
-6146
-6146
-6146
-6146
-6146
-6146
-6146
-6146
-5854
-5713
-5573
-5433
-5288
-5100
-4913
-4725
-4510
-4294
-4107
-3919
-3731
-3516
-3301
-3113
-2926
-2738
-2550
-2363
-1666
-1850
-2033
-2216
-2400
-2583
-2767
-2950
-3134
-3345
-3556
-3739
-3950
-4161
-4345
-4528
-4674
-4795
-4916
-5037
-5236
-5482
-5811
-5811
-5811
-5811
-5811
-5811
-5811
-5811
-5811
-5811
-5811
-5811
-5811
-5811
-5811
-5811
-5811
-5811
-5811
-5811
Note - All X-Y locations are in millimeters.
Figure A-1. Bond Pad Functions and Locations
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-99527
A
REVISION LEVEL
SHEET
21
Bond Pad Functions and Locations
Pad #
Name
Center-X
Center-Y
Pad #
Name
Center-X
Center-Y
85
86
87
88
89
90
91
92
93
94
95
96
97
98
99
100
101
102
103
104
105
106
107
108
109
110
111
112
113
114
115
116
117
118
119
120
121
122
123
124
125
126
I/O
I/O(WD)
I/O(WD)
I/O
I/O
I/O
I/O
I/O
I/O
GND
GND
VCC
VCC
I/O
I/O
I/O
I/O
I/O
I/O
I/O(WD)
I/O(WD)
I/O
I/O
I/O
I/O
I/O
I/O
QCLKB, I/O
I/O
I/O(WD)
GND
I/O(WD)
I/O
I/O
I/O
VCC
I/O
I/O(WD)
I/O(WD)
I/O
TDO, SDO, I/O
I/O
-2175
-1987
-1800
-1612
-1424
-1237
-1049
-861
-674
-459
-181
80
304
464
652
840
1027
1215
1403
1591
1779
1966
2154
2342
2530
2717
2905
3093
3281
3468
3684
3899
4087
4275
4462
4678
4880
5020
5160
5301
5472
5612
-5811
-5811
-5811
-5811
-5811
-5811
-5811
-5811
-5811
-5811
-5811
-5811
-5811
-5811
-5811
-5811
-5811
-5811
-5811
-5811
-5811
-5811
-5811
-5811
-5811
-5811
-5811
-5811
-5811
-5811
-5811
-5811
-5811
-5811
-5811
-5811
-5811
-5811
-5811
-5811
-5811
-5811
127
128
129
130
131
132
133
134
135
136
137
138
139
140
141
142
143
144
145
146
147
148
149
150
151
152
153
154
155
156
157
158
159
160
161
162
163
164
165
166
167
168
GND
GND
GND
VCC
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
VCC
I/O
I/O
GND
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
GND
I/O
TCK, I/O
VKS, GND
VPP, VCC
GND
VCC
VSV, VCC
I/O
I/O
VCC
I/O
I/O
I/O
5810
6146
6146
6146
6146
6146
6146
6146
6146
6146
6146
6146
6146
6146
6146
6146
6146
6146
6146
6146
6146
6146
6146
6146
6146
6146
6146
6146
6146
6146
6146
6146
6146
6146
6146
6146
6146
6146
6146
6146
6146
6146
-5811
-5540
-5372
-5163
-4984
-4863
-4742
-4615
-4468
-4316
-4164
-4012
-3860
-3680
-3501
-3349
-3169
-2989
-2837
-2685
-2533
-2381
-2229
-2077
-1939
-1801
-1663
-1525
-1315
-1048
-896
-546
-171
179
386
566
718
870
1080
1290
1442
1594
Note - All X-Y locations are in millimeters.
Figure A-1. Bond Pad Functions and Locations – continued
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-99527
A
REVISION LEVEL
SHEET
22
Bond Pad Functions and Locations
Pad #
169
170
171
172
173
174
175
176
177
178
179
180
181
182
183
184
185
186
187
188
189
190
191
192
193
194
Name
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
VCC
I/O
I/O
GND
I/O
I/O
I/O
I/O
I/O
I/O
I/O
GND
GND
VCC
I/O
SDI, I/O
I/O
I/O(WD)
I/O(WD)
I/O
VCC
I/O
I/O
I/O
I/O(WD)
GND
I/O(WD)
I/O
QCLKD, I/O
I/O
I/O
I/O
195
196
197
198
199
200
201
202
203
204
205
206
207
208
209
210
Center-X
6146
6146
6146
6146
6146
6146
6146
6146
6146
6146
6146
6146
6146
6146
6146
6146
6146
6146
6146
6146
6146
6146
5874
5560
5358
5228
5098
4951
4775
4600
4397
4195
4019
3844
3669
3466
3263
3088
2913
2737
2562
2387
Center-Y
1746
1899
2051
2203
2355
2507
2659
2811
2963
3115
3295
3475
3627
3806
3986
4138
4290
4431
4563
4857
5280
5482
5811
5811
5811
5811
5811
5811
5811
5811
5811
5811
5811
5811
5811
5811
5811
5811
5811
5811
5811
5811
Pad#
211
212
213
214
215
216
217
218
219
220
221
222
223
224
225
226
227
228
229
230
231
232
233
234
235
236
237
238
239
240
241
242
243
244
245
246
247
248
249
250
251
252
253
Name
I/O
I/O
I/O
I/O
I/O(WD)
I/O(WD)
I/O
PRA, I/O
I/O
CLKA, I/O
I/O
VCC
VCC
GND
GND
I/O
CLKB, I/O
I/O
PRB, I/O
I/O
I/O(WD)
I/O(WD)
I/O
I/O
I/O(WD)
I/O(WD)
I/O
QCLKC, I/O
I/O
I/O
GND
I/O
I/O
I/O
I/O
VCC
I/O(WD)
I/O(WD)
I/O
I/O
I/O
DCLK, I/O
I/O
Center-X
2212
2037
1861
1686
1539
1393
1246
1099
940
793
646
406
90
-184
-599
-816
-1005
-1194
-1384
-1586
-1775
-1964
-2153
-2342
-2531
-2720
-2909
-3099
-3288
-3477
-3694
-3910
-4099
-4289
-4478
-4694
-4911
-5100
-5245
-5370
-5495
-5713
-5854
Center-Y
5811
5811
5811
5811
5811
5811
5811
5811
5811
5811
5811
5811
5811
5811
5811
5811
5811
5811
5811
5811
5811
5811
5811
5811
5811
5811
5811
5811
5811
5811
5811
5811
5811
5811
5811
5811
5811
5811
5811
5811
5811
5811
5811
Note - All X-Y locations are in millimeters.
Figure A-1. Bond Pad Functions and Locations – continued
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-99527
A
REVISION LEVEL
SHEET
23
STANDARD MICROCIRCUIT DRAWING BULLETIN
DATE: 99 - 01 - 22
Approved sources of supply for SMD 5962-99527 are listed below for immediate acquisition only and shall be added to
MIL-HDBK-103 and QML-38535 during the next revision. MIL-HDBK-103 and QML-38535 will be revised to include
the addition or deletion of sources. The vendors listed below have agreed to this drawing and a certificate of
compliance has been submitted to and accepted by DSCC-VA. This bulletin is superseded by the next dated revision
of MIL-HDBK-103 and QML-38535.
Standard
microcircuit drawing
PIN 1/
Vendor
CAGE
number
Vendor
similar
PIN 2/
5962-9952701QXC
0J4Z0
A32200DX-CQ256B
5962-9952701QYC
0J4Z0
A32200DX-CQ208B
5962-9952702QXC
0J4Z0
A32200DX-1CQ256B
5962-9952702QYC
0J4Z0
A32200DX-1CQ208B
5962-9952701Q9A
0J4Z0
A32200DX-DIE
1/ The lead finish shown for each PIN representing a hermetic
package is the most readily available from the manufacturer
listed for that part. If the desired lead finish is not listed contact
the vendor to determine its availability.
2/ Caution. Do not use this number for item acquisition. Items
acquired to this number may not satisfy the performance
requirements of this drawing.
Vendor CAGE
number
0J4Z0
Vendor name
and address
Actel Corporation
955 East Arques Ave.
Sunnyvale, CA94086
The information contained herein is disseminated for convenience only and the
Government assumes no liability whatsoever for any inaccuracies in the
information bulletin.