Voltage Variable Absorptive Attenuator DC - 3 GHz AT-252 V 4.00 CR-3 Features ● ● ● ● Low Intermodulation Products Ultra Low DC Power Consumption Single Voltage Control 0 to -4 Volts Small Package Size, 0.180" (4.6 mm) Sq. Guaranteed Specifications1 (From -55°C to +85°C) Frequency Range Insertion Loss DC – 3.0 GHz DC – 2.0 GHz VSWR Attenuation2 DC – 3.0 GHz DC – 3.0 GHz DC – 2.0 GHz Flatness (to 12 dB Attenuation) DC – 3.0 GHz (Peak to Peak) DC – 2.0 GHz DC – 1.0 GHz Attenuation vs Temperature 0 to 10 dB Att. DC – 3.0 GHz 3.8 dB Max 3.5 dB Max 2.1:1 Max 8.5 dB Min 10.5 dB Min ±2.7 dB Max ±1.8 dB Max ±1.3 dB Max ±1.8 dB Max Operating Characteristics Impedance 50 Ohms Nominal Switching Characteristics Trise, Tfall (10% to 90%) 3 ns Typ Ton, Toff (50% CTL to 90%/10% RF) 5 ns Typ Transients (In-Band) 10 mV Typ Power Handling Linear Operation +13 dBm Max Absolute Max Input Power +21 dBm Max Intermodulation Intercept Point (for two-tone input power up to +5 dBm) Intercept Points IP2 IP33 0.05 GHz 34 +31 dBm Typ 0.5 GHz to 2.0 GHz 47 +36 dBm Typ Control Voltages (A Input) -4V to 0V @ 100 µA Max 1. All specifications apply with 50 ohm connected to all RF ports. 2. Above reference insertion loss. 3. For levels above 6 dB attenuation. For levels below 6 dB, IP 3 = 18 dBm minimum. 4. Contact the factory for standard or custom screening requirements. Ordering Information Part Number Package AT-252 PIN Ceramic Functional Schematic (Top View) Voltage Variable Absorptive Attenuator AT-252 V 2.00 Absolute Maximum Ratings1 Parameter Max. Input Power Control Voltage Operating Temperature Storage Temperature Absolute Maximum +21 dBm +5 V, –8.5 V –55˚C to +25˚C –65˚C to +150˚C 1.Operation of this device above any one of these parameters may cause permanent damage. Typical Performance